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CN-122003139-A - Wafer heating plate

CN122003139ACN 122003139 ACN122003139 ACN 122003139ACN-122003139-A

Abstract

The invention discloses a wafer heating plate, which comprises an annular heat conducting plate, wherein the annular heat conducting plate comprises a heating bottom plate and a heating side plate, a heating cavity capable of containing a wafer is formed between the heating bottom plate and the heating side plate, a bottom mounting groove is formed in the heating bottom plate, a bottom heating wire is arranged in the bottom mounting groove, a spiral groove is formed in the heating side plate, an arc groove bottom is formed in one side, close to the center of the annular heat conducting plate, of the spiral groove, a side heating wire is connected in the spiral groove, a mounting hole is formed in the heating bottom plate, and a heightening ball is placed in the mounting hole. The wafer heating plate provided by the invention can control the temperature accurately and effectively improve the edge temperature of the wafer, so that the overall temperature uniformity is remarkably improved, and the yield of devices is improved.

Inventors

  • MA JIAQI
  • WANG QIAOGANG
  • JIN ZHONGXUAN

Assignees

  • 浙江先导热电科技股份有限公司

Dates

Publication Date
20260508
Application Date
20251209

Claims (10)

  1. 1. The wafer heating plate is characterized by comprising an annular heat-conducting plate (1), wherein the annular heat-conducting plate (1) comprises a heating bottom plate (2) and a heating side plate (3), a heating cavity (4) capable of containing a wafer is formed between the heating bottom plate (2) and the heating side plate (3), a bottom mounting groove (21) is formed in the heating bottom plate (2), a bottom heating wire (211) is arranged in the bottom mounting groove (21), a spiral groove (31) is formed in the heating side plate (3), an arc groove bottom (311) is formed in one side of the spiral groove (31) close to the center of the annular heat-conducting plate (1), a side heating wire (32) is connected in the spiral groove (31), a mounting hole (22) is formed in the heating bottom plate (2), and a pad height ball (23) is placed in the mounting hole (22).
  2. 2. A wafer heating plate according to claim 1, wherein the heating side plate (3) is screwed with a cover ring (5), the cover ring (5) is provided with a spiral protrusion (51), the spiral protrusion (51) is abutted with the spiral groove (31), and the spiral protrusion (51) is located in the spiral groove (31).
  3. 3. A wafer heating plate as claimed in claim 2, wherein the spiral groove (31) comprises a groove side wall (312), a plurality of rubber paddles (6) are arranged on the groove side wall (312), a tilting part (61) is arranged on one side far away from the arc groove bottom (311) of the rubber paddles (6), an embedded gap (62) is arranged between the tilting part (61) and the groove side wall (312), an inserting sheet (52) is arranged on one side close to the groove side wall (312) of the spiral protrusion (51), and when the outer cover ring (5) is in threaded connection with the heating side plate (3), the inserting sheet (52) fills the embedded gap (62) and presses the tilting part (61) to abut against the side heating wire (32).
  4. 4. A wafer heating plate according to claim 3, wherein a placement groove (313) is provided at a position of the circular arc groove bottom (311) near the edge of the groove side wall (312), the placement groove (313) extends toward the opening side of the spiral groove (31), the rubber pulling piece (6) comprises a placement part (65) which is connected with the placement groove (313) in a clamping manner, and the side heating wire (32) and the groove side wall (312) clamp the rubber pulling piece (6).
  5. 5. A wafer heating plate according to claim 3, wherein rubber paddles (6) are provided on the groove side walls (312) on the upper and lower sides, and the spiral protrusions (51) are provided with inserting pieces (52) on both sides corresponding to the rubber paddles (6).
  6. 6. A wafer heating plate according to claim 3, wherein in a non-pressed state of the rubber blade (6), a distance H between one end of the rubber blade (6) away from the circular arc groove bottom (311) and the circular arc groove bottom (311), a distance H between the spiral protrusion (51) and the circular arc groove bottom (311), and a cross-sectional diameter d of the side heating wire (32), d < H.
  7. 7. A wafer heating plate according to claim 3, wherein the rubber pulling piece (6) is provided with an expansion opening (63) at a side far from the circular arc groove bottom (311), and the expansion opening (63) is provided with a pressing protrusion (64) at a side near the circular arc groove bottom (311).
  8. 8. A wafer heating plate according to claim 2, characterized in that the spiral protrusion (51) comprises an inner recess (53), and that an insulating gap (54) is formed between the inner recess (53) and the side heating wire (32).
  9. 9. A wafer heating plate according to any of claims 1-8, characterized in that the bottom of the annular heat-conducting plate (1) is connected with a cover plate (7).
  10. 10. A wafer heating plate according to any of claims 1-8, characterized in that the annular heat-conducting plate (1) is connected with a bottom temperature sensor (8) at a location close to the heating bottom plate (2), and that the annular heat-conducting plate (1) is connected with a side temperature sensor (9) at a location close to the heating side plate (3).

Description

Wafer heating plate Technical Field The invention relates to the technical field of wafer processing, in particular to a wafer heating plate. Background During semiconductor processing, the wafer needs to be precisely heated and maintained at a particular process temperature. Conventional wafer heating plates typically employ single zone or multi-zone heaters (e.g., center and edge zones) to heat the wafer. However, in practical processes, particularly when heating large-sized wafers (e.g., 12 inches and beyond), there is a common problem of heat loss at the wafer edge region. For example, bulletin number "CN118785554a", a "semiconductor heating plate, a semiconductor device based on the heating plate, and a heating method" are disclosed, including a heating device body, a controller, and a main heating plate body, the main heating plate body is embedded on the heating device body, a heating component is provided inside the heating device body, the heating component is electrified to generate heat to heat the main heating plate body, a movable plate body is further provided inside the heating device body, the movable plate body includes a first movable plate body and a second movable plate body, the first movable plate body and the second movable plate body are movable, and the first movable plate body and the second movable plate body regulate the thickness of the heating plate. However, in practical application, when the conventional heating plate is adopted, the temperature of the edge of the wafer is generally lower than that of the central area, so that the uniformity of the temperature in the whole wafer surface is poor, and the yield of devices is seriously reduced. Disclosure of Invention Aiming at the problem that the wafer is heated unevenly in the processing process in the prior art, the invention provides the wafer heating disc which can control the temperature accurately and effectively improve the edge temperature of the wafer, thereby remarkably improving the uniformity of the whole temperature and improving the yield of devices. In order to achieve the above purpose, the present invention adopts the following technical scheme. The utility model provides a wafer heating dish, including annular heat-conducting plate, annular heat-conducting plate is including heating bottom plate and heating curb plate, be formed with the heating chamber that can hold the wafer between heating bottom plate and the heating curb plate, be provided with the bottom mounting groove on the heating bottom plate, be provided with the bottom heating wire in the bottom mounting groove, be provided with the helicla flute on the heating curb plate, helicla flute is close to annular heat-conducting plate center one side and is provided with the circular arc tank bottom, the helicla flute in-connection has the side heating wire, be provided with the mounting hole on the heating bottom plate, the backing up ball has been placed in the mounting hole. During semiconductor processing, the wafer needs to be precisely heated and maintained at a particular process temperature. Conventional wafer heating plates typically employ single zone or multi-zone heaters (e.g., center and edge zones) to heat the wafer. However, in practical processes, particularly when heating large-sized wafers (e.g., 12 inches and beyond), there is a common problem of heat loss at the wafer edge region. Such heat loss is mainly due to radiation losses, where the wafer edge has a larger surface area to volume ratio and heat radiation is more pronounced, conduction losses, where the wafer edge is closer to the relatively cooler reaction chamber walls and mechanical parts for supporting/transporting the wafer, and process gas convection, where the process gas flows in the chamber and more heat is carried away from the edge region. Due to the heat loss, with conventional heating plates, the wafer edge temperature is typically lower than in the center region, resulting in poor temperature uniformity across the wafer. The temperature non-uniformity can directly lead to non-uniformity of key process parameters such as film thickness, etching rate, doping concentration and the like, and seriously reduces the yield of devices. In the prior art, although uniformity is improved by complicated multi-zone temperature control or improved hot plate materials, a system is often complicated, high in cost or limited in effect. According to the application, the annular heat-conducting plate is provided with the groove-shaped structure and comprises the heating bottom plate and the heating side plates, wherein the heating bottom plate is transversely arranged, the heating side plates are vertically arranged, the heating side plates are arranged on the edge positions of the heating bottom plate, so that a heating cavity capable of accommodating a wafer is formed between the heating bottom plate and the heating side plates, a bottom heating wire is arranged in the heating botto