Search

CN-122003147-A - Aluminum nitride ceramic substrate and preparation method and application thereof

CN122003147ACN 122003147 ACN122003147 ACN 122003147ACN-122003147-A

Abstract

The application discloses an aluminum nitride ceramic substrate and a preparation method and application thereof. The aluminum nitride ceramic substrate comprises a substrate main body, wherein the substrate main body is aluminum nitride ceramic with the relative density of more than or equal to 98.5%, at least one group of micro-channels are arranged in the substrate main body and are parallel to the substrate main body, each micro-channel is provided with a working medium inlet and a working medium outlet, a covalent ceramic coating is arranged on the inner wall of each micro-channel, and the covalent ceramic coating is made of at least one of hexagonal boron nitride, silicon carbide or boron-carbon-nitrogen compound. The aluminum nitride ceramic substrate has low leakage, low dielectric loss, corrosion resistance and long-term reliability.

Inventors

  • DONG JIA
  • HE JINHUA
  • WANG XIANGYANG

Assignees

  • 江苏博睿光电股份有限公司

Dates

Publication Date
20260508
Application Date
20251231

Claims (10)

  1. 1. The aluminum nitride ceramic substrate is characterized by comprising a substrate main body (100), wherein the substrate main body (100) is aluminum nitride ceramic with the relative density of more than or equal to 98.5%; At least one group of micro-channels (200) are arranged in the substrate main body (100), the micro-channels (200) are parallel to the substrate main body (100), and the micro-channels (200) are provided with a working medium inlet (201) and a working medium outlet (202); The inner wall of the microchannel (200) is provided with a covalent ceramic coating (300), and the covalent ceramic coating (300) is made of at least one of hexagonal boron nitride, silicon carbide or boron-carbon-nitrogen compound.
  2. 2. The aluminum nitride ceramic substrate according to claim 1, wherein the covalent ceramic coating (300) has a thickness H and 50 nm-500 nm.
  3. 3. The aluminum nitride ceramic substrate according to claim 1, wherein the micro-channel (200) has a cross-sectional diameter R, and R is 30 μm or less and 500 μm or less; the channel center distance of the micro channel (200) is L, and L is more than or equal to 200 mu m and less than or equal to 1000 mu m.
  4. 4. The aluminum nitride ceramic substrate of claim 1, wherein the micro-channels (200) employ at least one flow path topology of serpentine, parallel inline, dispense-sink.
  5. 5. The aluminum nitride ceramic substrate of claim 1, wherein the cross-sectional morphology of the micro-channel (200) comprises at least one of a near rectangular shape, a rounded rectangular shape, an elliptical shape, a trapezoidal shape.
  6. 6. The aluminum nitride ceramic substrate according to claim 1, wherein the aluminum nitride ceramic substrate satisfies at least one of the following conditions: (1) The thickness uniformity of the covalent ceramic coating (300) at room temperature is TU, and TU is less than or equal to 1.5; (2) The dielectric loss tangent of the covalent ceramic coating (300) at the frequency of 10 GHz is tan delta, and tan delta is less than or equal to 3 multiplied by 10 -3 ; (3) The room temperature thermal conductivity of the substrate main body (100) is more than or equal to 170W m -1 ·K -1 .
  7. 7. The aluminum nitride ceramic substrate according to claim 1, characterized in that a surface of the substrate body (100) is provided with a metallization layer (400), the metal in the metallization layer (400) comprising at least copper; The thickness of the metallization layer (400) is D, and D is more than or equal to 50 microns and less than or equal to 600 microns.
  8. 8. The aluminum nitride ceramic substrate according to claim 1, wherein the thickness of the substrate body (100) is 0.2 mm-1.2 mm; The minimum residual ceramic thickness of the channel wall is a, and a is more than or equal to 80 mu m.
  9. 9. A method for producing an aluminum nitride ceramic substrate according to any one of claims 1 to 8, comprising the steps of: Step 1, forming a template: Forming a corresponding sacrificial template pattern on the aluminum nitride ceramic membrane according to the size and shape of the target micro-channel by adopting a sacrificial template method to obtain the aluminum nitride ceramic membrane with the sacrificial template pattern; step 2, laminating: according to the number of groups of the target micro-channels, aligning and laminating a corresponding number of aluminum nitride ceramic membranes and the aluminum nitride ceramic membranes with the sacrificial template patterns obtained in the step 1 to obtain a laminated structure; step 3, presintering: Presintering the laminated structure in a protective gas atmosphere to remove the sacrificial template in the laminated structure, thereby obtaining a presintered structure with a fluid channel; step 4, sintering: Sintering the presintered structure at a temperature of 1500-1800 ℃ to obtain a substrate main body (100), wherein the substrate main body (100) is compact aluminum nitride ceramic with micro channels (200); Step 5, deposition of a covalent ceramic coating (300): And adopting a deposition method, taking a precursor corresponding to at least one material of hexagonal boron nitride, silicon carbide or boron-carbon-nitrogen composite as a deposition raw material, and depositing and forming a layer of covalent ceramic coating (300) on the inner wall of the micro-channel (200) to obtain the aluminum nitride ceramic substrate.
  10. 10. Use of an aluminum nitride ceramic substrate according to any one of claims 1 to 8 in an electronic device, characterized in that the electronic device comprises a power semiconductor module, a high heat flow LED, a radio frequency power amplifier or a data center cold plate substitute; The power semiconductor module includes any one of a SiC power semiconductor module, a GaN power semiconductor module, and an IGBT power semiconductor module.

Description

Aluminum nitride ceramic substrate and preparation method and application thereof Technical Field The application relates to an electronic ceramic and power device packaging heat dissipation technology, in particular to an aluminum nitride ceramic substrate, a preparation method and application thereof. Background Along with the improvement of the power density of devices such as silicon carbide (SiC)/gallium nitride (GaN), the heat flow density of a packaging interface reaches 100-1000W cm -2. Although the traditional aluminum nitride (AlN) substrate has high heat conduction and insulation, the heat dissipation can be realized only by being matched with an external cold plate or a thickened copper layer, the heat path is long, the heat resistance is high, and the heat circulation failure risk is high. Further, the conventional AlN substrate has problems of risk of leakage, increased dielectric loss, and poor reliability. Disclosure of Invention Based on the above problems, the present application aims to provide an aluminum nitride ceramic substrate, and a preparation method and application thereof. The aluminum nitride ceramic substrate provided by the application has the advantages that on the basis of realizing high heat conduction and insulation, the heat dissipation performance of the aluminum nitride ceramic substrate is improved, meanwhile, the chemical corrosion resistance of the aluminum nitride ceramic substrate is improved, the dielectric loss is reduced, and the long-term reliability of the aluminum nitride ceramic substrate is improved. In a first aspect, the present application provides an aluminum nitride ceramic substrate. The aluminum nitride ceramic substrate comprises a substrate main body, wherein the substrate main body is aluminum nitride ceramic with the relative density of more than or equal to 98.5%, at least one group of micro-channels are arranged in the substrate main body and are parallel to the substrate main body, and each micro-channel is provided with a working medium inlet and a working medium outlet. The inner wall of the microchannel is provided with a covalent ceramic coating, and the covalent ceramic coating is made of at least one of hexagonal boron nitride, silicon carbide or boron-carbon-nitrogen compound. In the scheme, the aluminum nitride ceramic with the relative density of more than or equal to 98.5% is used as the substrate main body, so that the substrate main body of the aluminum nitride ceramic substrate has a compact aluminum nitride ceramic skeleton structure, the leakage risk of the aluminum nitride ceramic substrate is reduced on the basis of realizing high heat conduction and insulation, and the overall wear resistance of the aluminum nitride ceramic substrate is improved. According to the application, at least one group of micro-channels with a closed structure are arranged in the substrate main body, and can be used as cooling channels (or heat dissipation channels) for flowing dielectric cooling liquid, so that the heat dissipation of the aluminum nitride ceramic substrate can be realized on the basis of no need of matching an external cold plate or thickening a copper layer, and the aluminum nitride ceramic substrate disclosed by the application realizes the integrated arrangement of high heat conduction, high insulation and heat dissipation. In the above scheme, the inner wall of the micro-channel is provided with the covalent ceramic coating made of at least one of hexagonal boron nitride, silicon carbide or boron-carbon-nitrogen compound, which is beneficial to reducing the possibility of corrosion or hydrogen evolution phenomenon after the inner wall of the micro-channel contacts with dielectric cooling liquid, thereby improving the reliability of the aluminum nitride ceramic substrate, in particular improving the long-term reliability of the aluminum nitride ceramic substrate. Moreover, through tests, the aluminum nitride ceramic substrate keeps water flowing without leakage under the internal pressure of 5 bar, and has the advantages of low leakage, low dielectric loss, corrosion resistance and long-term reliability. In some embodiments, the covalent ceramic coating has a thickness H of 50 nm≤H≤500 nm. Preferably, H is 50 nm≤H is≤300 nm. More preferably, H is 80 nm≤H is 200nm. In some embodiments, the microchannels employ at least one flow path topology of serpentine, parallel inline, split-sink. In some embodiments, the cross-sectional profile of the microchannel includes at least one of a near rectangle, a rounded rectangle, an ellipse, a trapezoid. In some embodiments, the cross-sectional diameter of the microchannel is R, and 30 μm R≤500 μm. In some embodiments, the microchannels have a channel center-to-center distance L, and 200 μm L≤1000 μm. In some embodiments, the aluminum nitride ceramic substrate meets at least one of (1) the thickness uniformity of the covalent ceramic coating layer at room temperature is TU and TU is less than or