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CN-122003150-A - Preparation method of driving IC wiring structure

CN122003150ACN 122003150 ACN122003150 ACN 122003150ACN-122003150-A

Abstract

The invention relates to the technical field of semiconductors, in particular to a preparation method of a wiring structure of a drive IC, which comprises the steps of providing a prefabricated member of the drive IC, wherein the prefabricated member comprises a substrate, a drive circuit and a third bonding pad, the drive circuit and the third bonding pad are distributed on the substrate, a semiconductor process is adopted to prepare a first bonding pad on the front surface of the substrate, one end of the first bonding pad is used for being reversely connected with an electrode of a luminous body in a pixel unit, the other end of the first bonding pad is electrically connected with one end of the third bonding pad through the drive circuit in the substrate, and the other end of the third bonding pad is used for being electrically connected with external drive; the pixel unit is electrically connected with the drive IC through the wiring structure, so that integration is realized, an external lead is not needed, and the influence of lead wiring on size mismatch and integration level is reduced.

Inventors

  • GUO WENPING
  • LIU TONGJUN
  • DENG QUNXIONG
  • HAN KUI
  • WANG SHUNRONG

Assignees

  • 元旭半导体科技(无锡)有限公司

Dates

Publication Date
20260508
Application Date
20260312

Claims (10)

  1. 1. The preparation method of the wiring structure of the drive IC is characterized by comprising the steps of providing a prefabricated member of the drive IC, wherein the prefabricated member at least comprises a substrate (1), a drive circuit and a third bonding pad (103), the drive circuit and the third bonding pad are distributed on the substrate (1), one end of the third bonding pad (103) is used for being electrically connected with external drive, and the other end of the third bonding pad is electrically connected with the drive circuit; the first bonding pad (101) is prepared on the substrate (1) by adopting a semiconductor process, the first bonding pad (101) comprises a first positive electrode bonding pad and a first negative electrode bonding pad, one ends of the first positive electrode bonding pad and the first negative electrode bonding pad are respectively used for being connected with a positive electrode (205) and a negative electrode (204) of the luminous body (2) in flip-chip alignment, and the other ends of the first positive electrode bonding pad and the first negative electrode bonding pad are used for being electrically connected with the driving circuit.
  2. 2. A method for manufacturing a wiring structure of a driver IC, characterized by providing a preform of a driver IC, the preform being the preform of claim 1; And preparing a second bonding pad (102), a first connecting circuit (105) and a first bonding pad on the front surface of the substrate (1) by adopting a semiconductor process, wherein the second bonding pad (102) is electrically connected with a third bonding pad (103) through the driving circuit, and the first bonding pad (101) is electrically connected through the first connecting circuit (105).
  3. 3. A method for manufacturing a wiring structure of a driver IC, characterized by providing a preform of a driver IC, the preform being the preform of claim 1; A second conductive hole is formed in the periphery of the substrate, and the second conductive hole is a second connecting circuit middle section (1062); Preparing a second bonding pad (102), a second connecting circuit front section (1061) and a first connecting circuit (105) on the front surface of the substrate (1), wherein two ends of the second connecting circuit front section (1061) are respectively connected with the third bonding pad and the second conductive hole, and the second bonding pad (102) is electrically connected with the third bonding pad (13) through the driving circuit; And preparing a fourth bonding pad (104) and a second connecting circuit rear section (1063) on the back surface of the substrate (1), wherein the fourth bonding pad is electrically connected with the second conductive hole through the second connecting circuit rear section (1063).
  4. 4. The method for manufacturing a wiring structure of a driving IC according to claim 3, wherein the opening of the second conductive hole at the outer periphery of the substrate comprises opening a groove at the front surface of the substrate (1); Filling conductive materials in the grooves; and thinning the back surface of the substrate (1) to expose the bottom end of the groove.
  5. 5. A method for manufacturing a wiring structure of a driver IC, characterized by providing a preform of a driver IC, the preform being the preform of claim 1; a groove is formed in the periphery of the substrate; Preparing a second bonding pad (102) and a first connecting circuit (105) on the front surface of the substrate (1), wherein the second bonding pad (102) is electrically connected with a third bonding pad (103) through the driving circuit, and the first connecting circuit (105) is electrically connected with the second bonding pad (102); preparing an insulating layer, wherein the insulating layer covers the whole surface including the surface of the second bonding pad and the inside of the groove; preparing a first conductive hole, a second conductive hole and a second connecting circuit front section (1061), wherein the first conductive hole penetrates through the insulating layer and is electrically connected with the first connecting circuit (105), the second conductive hole penetrates through the groove to form a second connecting circuit middle section (1062), and the second connecting circuit front section (1061) is connected with a third bonding pad (103) and the second conductive hole; preparing a first bonding pad (101) on the surface of the insulating layer, wherein the first bonding pad is electrically connected with the first conductive hole; thinning the back surface of the substrate (1) to expose the bottom end of the groove; And preparing a fourth bonding pad (104) and a second connecting circuit rear section (1063) on the back surface of the substrate, wherein one end of the second connecting circuit rear section (1063) is connected with the fourth bonding pad (104), and the other end of the second connecting circuit rear section is electrically connected with the first connecting circuit front section (1061) through the second conductive hole to form a second connecting circuit.
  6. 6. The method of manufacturing the driving IC wiring structure according to claim 5, wherein manufacturing the first conductive via, the second conductive via, and the second connection circuit front section (1061) includes etching the insulating layer to form a first etched groove penetrating the insulating layer and corresponding to the first connection circuit (105), and a second etched groove penetrating the insulating layer and corresponding to the groove and the third pad (103); setting a seed layer on the surface of the insulating layer, inside the first etching groove and inside the second etching groove; Filling conductive materials in the first etching groove, the second etching groove and the groove to form a first conductive hole, a second conductive hole and a second connecting circuit front section (1061); And removing the seed layer outside the areas of the first conductive holes, the second conductive holes and the second connecting circuit front section (1061).
  7. 7. A method for manufacturing a wiring structure of a driver IC, characterized by providing a preform of a driver IC, the preform being the preform of claim 1; a groove is formed in the periphery of the substrate; Preparing a second bonding pad (102) on the front surface of the substrate (1), wherein the second bonding pad (102) is electrically connected with the third bonding pad (103) through the driving circuit; Preparing an insulating layer, and simultaneously preparing a first conductive hole, a second connecting circuit front section (1061) and a first connecting circuit (105), wherein the insulating layer comprises a first insulating layer and a second insulating layer which are distributed in a laminated manner, the first conductive hole comprises a first conductive hole front section and a first conductive hole rear section, the first connecting circuit is positioned between the first insulating layer and the second insulating layer, the second conductive hole, namely a second connecting circuit middle section (1062), penetrates through the groove, the second connecting circuit front section (1061) penetrates through the first insulating layer and is electrically connected with the third bonding pad (103) and the second conductive hole, the first conductive hole front section penetrates through the first insulating layer, and the second bonding pad (102) is electrically connected with the first connecting circuit (105), and the first conductive hole rear section penetrates through the second insulating layer and is electrically connected with the first connecting circuit (105); Preparing a first bonding pad (101) on the surface of the second insulating layer, wherein the first bonding pad (101) is electrically connected with the rear section of the first conductive hole; thinning the back surface of the substrate (1) to expose the bottom end of the groove; And preparing a fourth bonding pad (104) and a second connecting circuit rear section (1063) on the back surface of the substrate, wherein one end of the second connecting circuit rear section (1063) is connected with the fourth bonding pad (104), and the other end of the second connecting circuit rear section is electrically connected with the first connecting circuit front section (1061) through the second conductive hole to form a second connecting circuit.
  8. 8. The method of manufacturing a driver IC wiring structure according to claim 7, wherein manufacturing the first conductive via, the second conductive via, and the second connection circuit front section (1061), the first connection circuit (105), comprises: Preparing and forming a first insulating layer, wherein the first insulating layer covers the whole surface including the surface of the second bonding pad and the inside of the groove; etching the first insulating layer to form a first etching groove front section and a second etching groove, wherein the second etching groove corresponds to the groove and the third bonding pad (103), and the first etching groove front section corresponds to the second bonding pad (102); A first seed layer is arranged on the surface of the first insulating layer, inside the second etching groove and inside the front section of the first etching groove; filling conductive materials in the grooves, the second etching grooves and the front sections of the first etching grooves to form second conductive holes, a second connecting circuit front section (1061) and a first conductive hole front section respectively, wherein the second conductive holes are second connecting circuit middle sections (1062); Removing the first seed layer outside the areas of the first conductive hole front section, the second conductive hole and the second connecting circuit front section (1061); Preparing a first connecting circuit on the surface of the first insulating layer, wherein the first connecting circuit is electrically connected with the front section of the first conductive hole; preparing and forming a second insulating layer, wherein the second insulating layer covers the whole surface including the surface of the first connecting circuit; Etching the second insulating layer to form a first etching groove rear section, wherein the first etching groove rear section corresponds to the first connecting circuit; A second seed layer is arranged on the surface of the second insulating layer and in the rear section of the first etching groove; Filling conductive materials in the rear section of the first etching groove to form a rear section of the first conductive hole; And removing the second seed layer outside the rear section area of the first conductive hole.
  9. 9. A method for manufacturing a wiring structure of a driver IC, characterized by providing a preform of a driver IC, the preform being the preform of claim 1; a groove is formed in the periphery of the substrate; preparing a second bonding pad (102) and a second connecting circuit front section (1061) on the front surface of the substrate (1), wherein the second connecting circuit front section (1061) is electrically connected with the third bonding pad (103), and the second bonding pad (102) is electrically connected with the third bonding pad (103) through the driving circuit; preparing an insulating layer, wherein the insulating layer covers the whole surface including the surface of the second bonding pad and the inside of the groove; Preparing and forming a first conductive hole and a second conductive hole, wherein the second conductive hole is the middle section (1062) of the second connecting circuit, the first conductive hole penetrates through the insulating layer and is electrically connected with the second bonding pad, the second conductive hole penetrates through the groove and is electrically connected with the front section (1061) of the second connecting circuit; Preparing a first bonding pad (101) and a first connecting circuit (105) on the surface of the insulating layer, wherein the first bonding pad is electrically connected with the first conductive hole through the first connecting circuit (105); thinning the back surface of the substrate (1) to expose the bottom end of the groove; And preparing a fourth bonding pad (104) and a second connecting circuit rear section (1063) on the back surface of the substrate, wherein one end of the second connecting circuit rear section (1063) is connected with the fourth bonding pad (104), and the other end of the second connecting circuit rear section is electrically connected with the first connecting circuit front section (1061) through the second conductive hole to form a second connecting circuit.
  10. 10. The method for manufacturing the wiring structure of the driving IC according to claim 9, wherein the manufacturing of the first and second conductive vias includes etching the insulating layer to form a first etched groove corresponding to the second pad (102) and a second etched groove corresponding to the groove and the second connection circuit front section (1061); a seed layer is arranged on the surface of the insulating layer, in the first etching groove and in the second etching groove by adopting a semiconductor process; filling conductive materials in the first etching groove, the second etching groove and the groove to form a first conductive hole and a second conductive hole; And removing the seed layer outside the first conductive hole and the second conductive hole areas.

Description

Preparation method of driving IC wiring structure Technical Field The invention relates to the technical field of semiconductors, in particular to a preparation method of a wiring structure of a drive IC. Background The display screen mainly comprises a pixel unit and a driving unit, wherein the pixel unit is used for emitting light to form a display image, and the driving unit is used for controlling the working state of a luminous body in the pixel unit. At present, driving control of the driving unit is mainly implemented by a driving IC, which determines smoothness, reliability, and the like of image display. The pixel unit and the driving IC are integrated, so that the control requirement of the pixel unit can be met. The traditional connection mode of the driving IC and the luminous body in the pixel unit is that a PCB board is connected, the driving IC, the luminous body and the PCB board are connected through leads, and the structure has the following defects: the integration level is low, and the lead connection mode occupies a larger substrate area, so that the whole packaging size cannot be further reduced, and the improvement of the integration level is not facilitated. For example, an LED light emitting device and an LED light emitting module (application number: 202223196803.8) are provided in the prior art, which can shorten the wire bonding distance, but still have the problem of low integration level. In view of the above, there is a need to prepare a wiring structure of a driving IC to solve the above-described problem of low integration level and the like. Disclosure of Invention Aiming at the defects in the prior art, the application provides a preparation method of a wiring structure of a driving IC, which adopts the following technical scheme: The preparation method of the wiring structure of the drive IC is characterized by comprising the steps of providing a prefabricated member of the drive IC, wherein the prefabricated member at least comprises a substrate, a drive circuit and a third bonding pad, the drive circuit and the third bonding pad are distributed on the substrate, one end of the third bonding pad is used for being electrically connected with external drive, and the other end of the third bonding pad is electrically connected with the drive circuit; And preparing the first bonding pad on the substrate by adopting a semiconductor process, wherein the first bonding pad comprises a first positive electrode bonding pad and a first negative electrode bonding pad, one ends of the first positive electrode bonding pad and the first negative electrode bonding pad are respectively used for being connected with a positive electrode and a negative electrode of the luminous body in flip-chip contraposition, and the other ends of the first positive electrode bonding pad and the first negative electrode bonding pad are used for being electrically connected with the driving circuit. A method for manufacturing a wiring structure of a driver IC, characterized by providing a preform of a driver IC, the preform being the preform of claim 1; and preparing a second bonding pad, a first connecting circuit and a first bonding pad on the front surface of the substrate by adopting a semiconductor process, wherein the second bonding pad is electrically connected with a third bonding pad through the driving circuit, and is electrically connected with the first bonding pad through the first connecting circuit. A method for manufacturing a wiring structure of a driver IC, characterized by providing a preform of a driver IC, the preform being the preform of claim 1; a second conductive hole, namely a second connecting circuit middle section, is formed in the periphery of the substrate; Preparing a second bonding pad, a second connecting circuit front section and a first connecting circuit on the front surface of the substrate, wherein two ends of the second connecting circuit front section are respectively connected with the third bonding pad and the second conductive hole, and the second bonding pad is electrically connected with the third bonding pad through the driving circuit; And preparing a fourth bonding pad and a second connecting circuit rear section on the back surface of the substrate, wherein the fourth bonding pad is electrically connected with the second conductive hole through the second connecting circuit rear section. The method is further characterized in that the periphery of the substrate is provided with a second conductive hole, and the method comprises the steps of providing a groove on the front surface of the substrate; Filling conductive materials in the grooves; and thinning the back surface of the substrate to expose the bottom end of the groove. A method for manufacturing a wiring structure of a driver IC, characterized by providing a preform of a driver IC, the preform being the preform of claim 1; a groove is formed in the periphery of the substrate; Preparing a second bon