CN-122003152-A - Aluminum substrate power device package

CN122003152ACN 122003152 ACN122003152 ACN 122003152ACN-122003152-A

Abstract

The aluminum substrate power device package comprises a power transistor wafer, an L-shaped aluminum substrate, an insulating glue material and an L-shaped aluminum substrate, wherein an aluminum drain electrode pad is arranged on the bottom surface of the power transistor wafer, a source electrode pad and a switch control electrode pad are arranged on the top surface of the power transistor wafer, one side of the L-shaped aluminum substrate is small in thickness, the power transistor wafer is welded on the top surface of the side of the L-shaped aluminum substrate, which is small in thickness, of the L-shaped aluminum substrate through the aluminum drain electrode pad, and the insulating glue material is filled around the level of the power transistor wafer. The L-shaped aluminum substrate is used as a drain electrode conductive pole piece, a packaged drain electrode bonding pad, a packaged radiating fin and a packaged substrate of the power transistor wafer, and the wafer is welded on the L-shaped aluminum substrate through an aluminum-aluminum welding process, so that the processing links are reduced, the cost is saved, the performance of a power device is improved, and the high-power transistor package with high cost performance is realized.

Inventors

ZHAO ZHENTAO

Assignees

摩驱科技(深圳)有限公司

Dates

Publication Date: 20260508
Application Date: 20250417

Claims (4)

1. The aluminum substrate power device package is characterized by comprising a power transistor wafer, an aluminum drain electrode pad, an L-shaped aluminum substrate, an insulating filling glue and a circuit board surface mounting process soldering metal layer, wherein the aluminum drain electrode pad is arranged on the bottom surface of the power transistor wafer, the source electrode pad and the switch control electrode pad are arranged on the top surface of the power transistor wafer, one side of the L-shaped aluminum substrate is smaller in thickness, the power transistor wafer is soldered on the top surface of the side of the L-shaped aluminum substrate, which is smaller in thickness, by adopting an aluminum-aluminum direct soldering process, the top surface of the side, which is larger in thickness, of the L-shaped aluminum substrate is plated with the circuit board surface mounting process soldering metal layer, the top surface of the power transistor wafer is level with the top surface of the side, which is larger in thickness, of the L-shaped aluminum substrate is filled with the insulating filling glue, and the insulating filling glue is filled on the top surface of the side, which is smaller in thickness, of the L-shaped aluminum substrate.
2. The aluminum-substrate power device package of claim 1 wherein the power transistor wafer is a set of two or more transistor wafers that are soldered to the top surface of the smaller side of the L-shaped aluminum substrate by an aluminum drain pad, respectively, using an aluminum-aluminum direct soldering process.
3. The aluminum substrate power device package of claim 1, wherein the power transistor wafer is a diode wafer, an aluminum anode pad is arranged on the bottom surface of the diode wafer, a cathode pad is arranged on the top surface of the diode wafer, the diode wafer is welded on the top surface of the side, with smaller thickness, of the L-shaped aluminum substrate through the aluminum anode pad by adopting an aluminum-aluminum direct welding process, and the top surface of the diode wafer is flush with the top surface of the side, with larger thickness, of the L-shaped aluminum substrate.
4. The aluminum substrate power device package of claim 1 wherein the bottom surface of the L-shaped aluminum substrate is plated with a circuit board surface mount technology solderable metal layer.

Description

Aluminum substrate power device package Technical Field The invention relates to a processing technology of aluminum metal, relates to optimization and architecture design of a packaging technology and a chip heat dissipation technology for a power device, and relates to packaging technologies of silicon-based transistors, third-generation and fourth-generation semiconductor transistors. Background Power transistors (e.g., MOSFETs, diodes, HEMTs, and IGBTs) are widely used in high power electronic devices such as power management modules, electric vehicle drive systems, and industrial motor control. In semiconductor manufacturing, a bonding pad (pad) on a wafer (wafer) is usually made of aluminum (Al) as a main material, mainly because of balance of conductivity and cost, low price of aluminum material compared with copper which is a common conductive material, easy processing, very mature process, stable oxide, and high insulation performance compared with copper oxide. In the aluminum-aluminum welding process, laser welding and ultrasonic welding are commonly used. The third generation semiconductor materials GaN (gallium nitride) and SiC (silicon carbide) are representatives of wide forbidden band semiconductors, and the power device manufactured by gallium nitride has the remarkable characteristics of high switching speed, low on-resistance, small chip area and the like, and is widely applicable to the fields of power adapters, industrial power supplies, automobile electronics and the like, and SiC transistors including diodes, MOS transistors and the like are widely used. Ultra-wideband power devices, which are mainly represented by diamond, gallium oxide and the like, are also coming into practical use. Conventional power transistor packages typically employ complex lead frame and metal clip structures to make electrical connection of the source, gate and drain. However, this packaging method has the problems of complicated process, large volume, limited heat dissipation performance, and influence on the device performance. The metal substrate carrying the power transistor wafer mostly adopts a copper substrate, the copper material has higher price, the oxide of copper is a semiconductor, the insulation property is poor, and if the insulation property of a part needing insulation is improved, an additional treatment process is required. Disclosure of Invention In order to solve the problems, the invention provides a power transistor packaging structure based on an L-shaped aluminum packaging substrate, which not only simplifies the packaging process and reduces the manufacturing cost, but also adopts the same metal aluminum as a wafer drain electrode bonding pad for the substrate, so that the wafer aluminum bonding pad and the aluminum substrate can be directly welded through an aluminum-aluminum welding process, the cost is reduced, and meanwhile, the parameter index of the power transistor can be improved. The technical aim is achieved by the aluminum substrate power device package, which comprises a power transistor wafer, wherein an aluminum drain pad is arranged on the bottom surface of the power transistor wafer, a source pad and a switch control electrode pad are arranged on the top surface of the power transistor wafer, the source pad and the switch control electrode pad which are arranged on the top surface of the wafer are made of weldable materials in the production of an electronic product patch (SMT), the welding materials can be achieved through chemical plating or copper bump technology, in the production technology of the general electronic product patch (SMT), a circuit layer of a circuit board is copper foil with electroplated surfaces, the aluminum pad of the wafer cannot be directly welded on the circuit board, the aluminum substrate is also comprises an L-shaped aluminum substrate, the L-shaped aluminum substrate is prepared through a machining or etching technology, one side of the L-shaped aluminum substrate is small in thickness, the power transistor wafer is welded on the top surface of one side of the L-shaped aluminum substrate through the aluminum drain pad through an aluminum-aluminum direct welding technology, the top surface mounting technology of the L-shaped aluminum substrate is plated with a metal layer which is easy to be welded, the top surface sizing material of one side of the L-shaped aluminum substrate is flush with the top surface sizing material of the large side of the L-shaped aluminum substrate, and the top surface sizing material of the L-shaped aluminum substrate is filled with Polyimide insulating material which is filled on the periphery of the wafer, and the insulating Polyimide insulating plastic insulating material (Polyimide insulating glass or insulating glass) is filled on the one side of the L-shaped insulating glass substrate, and the insulating glass is filled with insulating Polyimide resin. In order to realize mass production, the L-shaped a