CN-122003154-A - Package substrate and semiconductor package including the same

Abstract

A package substrate and a semiconductor package are provided. The package substrate may include a base layer including a first surface and a second surface opposite the first surface, a distribution structure in the base layer, a bump pad connected to the distribution structure and on the first surface of the base layer, a connection terminal attached to the bump pad and having a melting point of a first temperature, and a metal protection layer on a surface of the connection terminal and including tin and having a melting point of a second temperature, wherein the first temperature is lower than the second temperature.

Inventors

• WU SHENGZHEN

Assignees

• 三星电子株式会社

Dates

Publication Date

20260508

Application Date

20251023

Priority Date

20241108

Claims (20)

1. 1. A package substrate, the package substrate comprising: a base layer comprising a first surface and a second surface opposite the first surface; A through via extending from the first surface of the base layer to the second surface of the base layer; A first distribution structure located on the first surface of the base layer and including a first distribution pattern and a first interlayer insulating layer surrounding the first distribution pattern; A first bump-pad located on and connected to the first distribution pattern of the first distribution structure, the first bump-pad being spaced apart from the base layer, the first distribution structure being located between the first bump-pad and the base layer; A first passivation layer on the first distribution structure and surrounding the first bump pad, the first passivation layer including an opening overlapping the first bump pad in a vertical direction; a first connection terminal positioned at the first position A passivation layer in the opening and on the first bump pad, the first connection terminal including tin and having a melting point of a first temperature, and A metal protection layer on the surface of the first connection terminal, the metal protection layer including tin, and having a melting point of a second temperature, Wherein the first temperature is lower than the second temperature.
2. 2. The package substrate of claim 1, wherein the first connection terminal has a first hardness, and Wherein the metal protective layer has a second hardness that is greater than the first hardness.
3. 3. The package substrate of claim 1, wherein the first connection terminal has a first tensile strength, and Wherein the metallic protective layer has a second tensile strength greater than the first tensile strength.
4. 4. The package substrate of claim 1, wherein the first connection terminal comprises 30 to 60 wt% tin, and Wherein the metal protection layer comprises 95 to 99 wt% tin.
5. 5. The package substrate of claim 1, wherein the metal protection layer has a thickness of 3 μm to 10 μm.
6. 6. The package substrate of claim 5, wherein the first connection terminal has a maximum width of 100 μm to 600 μm.
7. 7. The package substrate of claim 1, wherein the metal protection layer is conformally disposed on a surface of the first connection terminal that is not in contact with the first bump pad or the first passivation layer.
8. 8. The package substrate of claim 1, wherein a thickness of the metal protection layer increases in a direction away from the first passivation layer.
9. 9. The package substrate of claim 1, wherein the metal protection layer is spaced apart from the first bump pad in the vertical direction with a gap between the metal protection layer and the first bump pad in the vertical direction, and Wherein a portion of the first connection terminal is exposed to the outside through the gap.
10. 10. The package substrate of claim 9, wherein the thickness of the metal protection layer increases in a direction away from the first passivation layer.
11. 11. The package substrate of claim 1, wherein the first temperature is 140 degrees celsius to 180 degrees celsius, and Wherein the second temperature is 200 degrees celsius to 240 degrees celsius.
12. 12. The package substrate of claim 1, wherein the width of the opening of the first passivation layer is smaller than the horizontal width of the first bump pad, and Wherein a sidewall of the first passivation layer defines the opening, and the sidewall is in contact with the first connection terminal.
13. 13. A package substrate, the package substrate comprising: a base layer comprising a first surface and a second surface opposite the first surface; A through via extending from the first surface of the base layer to the second surface of the base layer; A first distribution structure located on the first surface of the base layer and including a first distribution pattern and a first interlayer insulating layer surrounding the first distribution pattern; A first bump-pad located on and connected to the first distribution pattern of the first distribution structure, the first bump-pad being spaced apart from the base layer, the first distribution structure being located between the first bump-pad and the base layer; A first passivation layer on the first distribution structure and surrounding the first bump pad, the first passivation layer including an opening overlapping the first bump pad in a vertical direction; A first connection terminal located in the opening of the first passivation layer and on the first bump pad, the first connection terminal including tin and having a first hardness; A metal compound layer on the surface of the first connection terminal, and A metal protective layer which is located on the surface of the first connection terminal and the metal compound layer and has a second hardness greater than the first hardness, Wherein the melting point of the first bump pad is lower than that of the metal protection layer.
14. 14. The package substrate of claim 13, wherein the metal protection layer has a reflectivity less than a reflectivity of the metal compound layer.
15. 15. The package substrate of claim 13, wherein the metal compound layer is located between the first connection terminal and the metal protection layer.
16. 16. The package substrate of claim 15, wherein the metal protection layer is located on the metal compound layer such that the metal compound layer is not exposed to the outside.
17. 17. The package substrate of claim 13, wherein the metal cap layer is separated from the first bump pad in the vertical direction and has a gap between the metal cap layer and the first bump pad in the vertical direction, and Wherein a portion of the first connection terminal is exposed to the outside through the gap.
18. 18. The package substrate of claim 17, wherein a portion of the metal compound layer is exposed to the outside through the gap.
19. 19. The package substrate of claim 13, wherein a portion of the surface of the first connection terminal not in contact with the base layer is provided with corners.
20. 20. A semiconductor package, the semiconductor package comprising: The package substrate includes a base layer including a first surface and a second surface opposite the first surface, a first distribution structure on the first surface of the base layer, a second distribution structure on the second surface of the base layer, a through via penetrating the base layer and connecting the first distribution structure to the second distribution structure, a first bump pad below a lower surface of the first distribution structure, a second bump pad on an upper surface of the second distribution structure, and a first passivation layer surrounding the first bump pad and including an opening overlapping the first bump pad in a vertical direction; A main substrate, wherein the package substrate is located on an upper surface of the main substrate, and the main substrate includes a substrate bump pad located at the upper surface of the main substrate; A substrate connection terminal located between the package substrate and the main substrate and configured to electrically and physically connect the first bump pad of the package substrate to the substrate bump pad of the main substrate, the substrate connection terminal having a melting point of a first temperature; Metal protection layer fragments, which are located inside the substrate connection terminals, and have a melting point of a second temperature higher than the first temperature; A semiconductor chip located on an upper surface of the second distribution structure of the package substrate; A chip connection terminal located between the package substrate and the semiconductor chip and configured to electrically and physically connect the second bump pad of the package substrate to a chip pad of the semiconductor chip, and And a molding layer on the package substrate and surrounding the semiconductor chip.

Description

Package substrate and semiconductor package including the same Technical Field The present disclosure relates to a package substrate, a semiconductor package including the package substrate, and a method of manufacturing the semiconductor package, and more particularly, to a package substrate to which connection terminals are attached. Background Recently, in response to rapid development of the electronic industry and user demands, electronic devices are being further miniaturized and multifunctional and have a larger capacity, and thus, highly integrated semiconductor chips are required. Accordingly, a semiconductor package is being designed which includes a highly integrated semiconductor chip having an increased number of connection terminals for input/output (I/O) while ensuring connection reliability. Disclosure of Invention According to some embodiments of the present disclosure, a package substrate including a connection terminal having a low melting point and a semiconductor package including the package substrate may be provided. According to some embodiments of the present disclosure, a package substrate may be provided and may include a base layer including a first surface and a second surface opposite to the first surface, a through via extending from the first surface of the base layer to the second surface of the base layer, a first distribution structure on the first surface of the base layer and including a first distribution pattern and a first interlayer insulating layer surrounding the first distribution pattern, a first bump pad on the first distribution pattern of the first distribution structure and connected to the first distribution pattern of the first distribution structure, the first bump pad and the base layer being spaced apart from each other by a distance between the first bump pad and the base layer, a first passivation layer on the first distribution structure and surrounding the first bump pad, the first passivation layer overlapping the first connection pad in a vertical direction, and the first connection pad including connection terminals, respectively, the connection pad and the first connection terminalThe first connection terminal includes tin (Sn) and has a melting point of a first temperature, and a metal protection layer on a surface of the first connection terminal, the metal protection layer including Sn and having a melting point of a second temperature, wherein the first temperature is lower than the second temperature. According to some embodiments of the present disclosure, a package substrate may be provided and may include a base layer including a first surface and a second surface opposite the first surface; a through via extending from the first surface of the base layer to the second surface of the base layer; a first distribution structure located on the first surface of the base layer and including a first distribution pattern and a first interlayer insulating layer surrounding the first distribution pattern, a first bump pad located on the first distribution pattern of the first distribution structure and connected to the first distribution pattern of the first distribution structure, the first bump pad being spaced apart from the base layer, the first distribution structure being located between the first bump pad and the base layer, a first passivation layer located on the first distribution structure and surrounding the first bump pad, the first passivation layer including openings overlapping the first bump pad in a vertical direction, respectively, a first connection terminal located in the openings of the first passivation layer and located on the first bump pad, the first connection terminal including tin (Sn) and having a first hardness, a metal compound layer located between the first bump pad and the base layer, a metal compound layer located on each of the first connection terminals and the first protection layer, wherein the first connection terminal has a first hardness and the first protection layer has a first hardness, the melting point of the first bump pad is lower than that of the metal protection layer. According to some embodiments of the present disclosure, a semiconductor package may be provided and may include a package substrate including a base layer including a first surface and a second surface opposite the first surface, a first distribution structure on the first surface of the base layer, a second distribution structure on the second surface of the base layer, a through via penetrating the base layer and connecting the first distribution structure to the second distribution structure, a first bump pad below a lower surface of the first distribution structure, a second bump pad on an upper surface of the second distribution structure, and a first passivation layer surrounding the first bump pad and including an opening overlapping the first bump pad in a vertical direction. The semiconductor package may further include a