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CN-122003390-A - Joining member and joined body

CN122003390ACN 122003390 ACN122003390 ACN 122003390ACN-122003390-A

Abstract

The member for bonding has a substrate containing an inorganic material and a surface to be bonded having a bonding function with other members, (I) the surface to be bonded is a first surface of the substrate, or (ii) the surface to be bonded is a surface of an inorganic dielectric film provided on the first surface of the substrate, wherein in an N1s energy spectrum of the surface to be bonded, when the maximum intensity in the range of 402.5eV to 403.5eV is I 1 and the maximum intensity in the range of 398.2eV to 399.2eV is I 2 , I 2 /I 1 is greater than 1.5, and in the case of (I), the nitrogen content of the surface to be bonded is higher than the main body portion of the substrate, and in the case of (ii), the inorganic dielectric film does not contain a nitride film, and the nitrogen content of the surface to be bonded is higher than the main body portion of the outermost layer of the inorganic dielectric film.

Inventors

  • NAGAI SEI
  • Someya takehiro
  • NAKAO KEISUKE

Assignees

  • ＡＧＣ株式会社

Dates

Publication Date
20260508
Application Date
20241007
Priority Date
20231012

Claims (20)

  1. 1. A joining member comprising a base material containing an inorganic material and a surface to be joined having a joining function with other members, (I) The joined surface is the first surface of the base material, or (Ii) The bonded surface is a surface of an inorganic dielectric film provided on the first surface of the base material, In the N1s energy spectrum of the bonded surface obtained by X-ray photoelectron spectroscopy, when the maximum intensity in the range of 402.5eV to 403.5eV is I 1 and the maximum intensity in the range of 398.2eV to 399.2eV is I 2 , the ratio I 2 /I 1 is more than 1.5, In the case of (i), the nitrogen content of the bonded surface is higher than that of the main body of the base material, In the case of (ii), the inorganic dielectric film does not include a nitride film, and the nitrogen content of the bonded surface is higher than that of the main body portion of the outermost layer of the inorganic dielectric film.
  2. 2. The joining member according to claim 1, wherein in the case of (i), the amount of nitrogen in the joined surface is 0.1 at% or more higher than the amount of nitrogen in the main body portion of the base material, In the case of (ii), the amount of nitrogen in the joined surface is 0.1 atomic% or more higher than the amount of nitrogen in the main body portion of the outermost layer.
  3. 3. The joining member according to claim 1, wherein the base material comprises an inorganic crystal or a glass containing SiO 2 .
  4. 4. The joining member according to claim 1, wherein the base material comprises sapphire or SiO 2 -containing glass.
  5. 5. The joining member according to claim 1, wherein the base material is in a flat plate shape or a lens shape.
  6. 6. The joining member according to claim 1, wherein the base material is a processed member having at least one of a through hole, a groove, and a non-through recess.
  7. 7. A bonded body formed by directly bonding a first base material and a second base material, wherein, The first substrate comprises glass containing less than 90 mole% SiO 2 , The second substrate comprises an inorganic material, The joint body has a joint surface between the first substrate and the second substrate, the nitrogen content in the joint surface is higher than that of the main body part of the first substrate and/or the second substrate, The joined body has a joining energy of 1J/m 2 or more or a joining strength of 0.7kgf/mm 2 or more.
  8. 8. The joined body according to claim 7, wherein an amount of nitrogen in the joining surface is 0.1 atomic% or more higher than that in the main body portion of the first base material and/or the second base material.
  9. 9. The joined body according to claim 7, wherein at least one of the first base material and the second base material is in a flat plate shape or a lens shape.
  10. 10. The joined body according to claim 7, wherein at least one of the first base material and the second base material is a processing member having at least one of a through hole, a non-through recess, and a groove.
  11. 11. The joined body according to claim 7, wherein the second base material comprises an inorganic crystal or a glass containing SiO 2 .
  12. 12. The joined body according to claim 7, wherein the second base material comprises sapphire or glass containing 90 mol% or less of SiO 2 .
  13. 13. A light-emitting device comprising the bonded body according to claim 7, The first substrate is a lens and the second substrate is a lens, The second base material is a support substrate for supporting the semiconductor laminated portion of the light emitting element.
  14. 14. The light-emitting element according to claim 13, wherein phosphor particles are dispersed in the first base material.
  15. 15. A bonded body having a first substrate, a second substrate, and an inorganic dielectric film between the first substrate and the second substrate, wherein, The first substrate and the second substrate comprise an inorganic material, The inorganic dielectric film does not include a nitride film, (I) The junction body has a junction surface at an interface between the first substrate and a layer of the inorganic dielectric film closest to the first substrate, or (Ii) The junction body has a junction surface at an interface between the second substrate and a layer of the inorganic dielectric film closest to the second substrate, or (Iii) The junction body has a junction surface in the inorganic dielectric film, In the case of (i), the nitrogen content in the joint surface is higher than the main body portion of the first base material and the main body portion of the layer of the inorganic dielectric film, In the case of the (ii), the nitrogen content in the joint surface is higher than the main body portion of the second base material and the main body portion of the layer of the inorganic dielectric film, In the case of (iii), the junction is not the interface between the SiO 2 layers, but rather: (a) The junction is an interface between adjacent layers contained in the inorganic dielectric film, and the nitrogen content of the junction is higher than that of a main body of the adjacent layers of the inorganic dielectric film, or (B) The junction surface is located inside a first layer constituting the inorganic dielectric film, the nitrogen content in the junction surface is higher than that in a main body portion of the first layer, The joined body has a joining energy of 0.5J/m 2 or more or a joining strength of 0.4kg/mm 2 or more.
  16. 16. The joined body according to claim 15, wherein, In the case of (i), the amount of nitrogen in the joint surface is 0.1 at% or more higher than that in the main body portion of the first substrate and the main body portion of the layer closest to the first substrate, In the case of the (ii), the nitrogen amount in the joint surface is 0.1 at% or more higher than that in the main body portion of the second substrate and the main body portion of the layer closest to the second substrate, In the case of (iii), the amount of nitrogen in the junction surface is 0.1 atomic% or more higher than the amount of nitrogen in the main body portion of the adjacent layer, or the amount of nitrogen in the junction surface is 0.1 atomic% or more higher than the amount of nitrogen in the main body portion of the first layer.
  17. 17. The bonded body according to claim 15, wherein the inorganic dielectric film comprises a plurality of layers, The layer of the inorganic dielectric film closest to the surface of the first substrate is different from the layer of the inorganic dielectric film closest to the surface of the second substrate, or The material of the layer of the inorganic dielectric film closest to the surface of the first substrate is the same as the layer of the inorganic dielectric film closest to the surface of the second substrate.
  18. 18. The joined body according to claim 15, wherein at least one of the first base material and the second base material is in a flat plate shape or a lens shape.
  19. 19. The joined body according to claim 15, wherein at least one of the first base material and the second base material is a processing member having at least one of a through hole, a non-through recess, and a groove.
  20. 20. The joined body according to claim 15, wherein the first substrate and the second substrate comprise inorganic crystals or glass containing SiO 2 .

Description

Joining member and joined body Technical Field The present invention relates to a joining member and a joined body. Background There is a high demand for a technique of joining two members, and various methods have been heretofore employed. For example, as a technique for joining glass members to each other by a process other than a vacuum system, a hydrophilization joining technique is known. In this method, first, hydroxyl groups or silanol groups are formed on the bonded surfaces of the respective glass members, and the two glass members are weakly bonded by hydrogen bonding between these chemical groups. Then, when the assembly is heated to a temperature above 600 ℃, the OH groups are decomposed. At this time, a bridge of Si-O-Si is formed by the residual oxygen atoms, and the two glass members are firmly bonded. Prior art literature Patent literature Patent document 1 International publication No. WO2020/175396 Disclosure of Invention Problems to be solved by the invention In the hydrophilization bonding technique as described above, it is necessary to perform the heat treatment at a temperature of 600 ℃ or higher. Therefore, in the hydrophilization bonding technique, when the bonding member includes precision devices such as a light emitting element and an electronic element, there is a problem in that such devices are broken or deteriorated due to high-temperature heat treatment. In addition, when the processing member having the feature structures such as the through hole, the groove, and the non-through recess is a joining member, there is a possibility that the dimension of the feature structure changes when the joining member is subjected to a high-temperature heat treatment. It is seen that there is a problem that it is difficult to apply the hydrophilization bonding technique to a bonding member for precision devices and a micromachined member. Recently, as another bonding technique, a sequential plasma activation technique has been reported (patent document 1). In this method, the bonded surfaces of two pieces of quartz glass are each modified by sequential plasma treatment. The modified surface has a joining function, and therefore, by bringing the joined surfaces of the two pieces of quartz glass into contact, the two pieces of quartz glass can be joined to each other. However, in the sequential plasma activation technique, the bonded surface that can be bonded is limited to the SiO 2 surface. Therefore, in the case of joining members other than quartz glass, it is necessary to form a SiO 2 film on the surface. The joining member in which the other inorganic dielectric film is exposed has a problem that joining is difficult. The present invention has been made in view of such a background, and an object of the present invention is to provide a joining member that can significantly alleviate restrictions on a joined surface and that can be manufactured without using a heat treatment at a high temperature of 600 ℃ or higher, and a joined body including such a joining member. Means for solving the problems The present invention provides a joining member comprising a base material containing an inorganic material and a joined surface having a joining function with other members, (I) The joined surface is the first surface of the base material, or (Ii) The bonded surface is a surface of an inorganic dielectric film provided on the first surface of the base material, In the N1s energy spectrum of the bonded surface obtained by X-ray photoelectron spectroscopy, when the maximum intensity in the range of 402.5eV to 403.5eV is I 1 and the maximum intensity in the range of 398.2eV to 399.2eV is I 2, the ratio I 2/I1 is more than 1.5, In the case of (i), the nitrogen content of the bonded surface is higher than that of the main body of the base material, In the case of (ii), the inorganic dielectric film does not include a nitride film, and the nitrogen content of the bonded surface is higher than that of the main body portion of the outermost layer of the inorganic dielectric film. In addition, in the present invention, there is provided a joined body constituted by directly joining a first base material and a second base material, wherein, The first substrate comprises glass containing less than 90 mole% SiO 2, The second substrate comprises an inorganic material, The joint body has a joint surface between the first substrate and the second substrate, the nitrogen content in the joint surface is higher than that of the main body part of the first substrate and/or the second substrate, The joined body has a joining energy of 1J/m 2 or more or a joining strength of 0.7kgf/mm 2 or more. Further, in the present invention, there is provided a joined body having a first base material, a second base material, and an inorganic dielectric film between the first base material and the second base material, wherein, The first substrate and the second substrate comprise an inorganic material, The dielectric film