CN-122003518-A - Sputtering target for magnetic material, sputtering target assembly for magnetic material, and method for producing sputtering target for magnetic material

Abstract

The application provides a sputtering target for a magnetic material, a sputtering target assembly for a magnetic material and a method for manufacturing the sputtering target for a magnetic material, which can well inhibit peeling of a redeposited film. A sputtering target for a magnetic material, which has a sputtering region and a non-sputtering region, wherein the surface of the non-sputtering region has a plurality of protrusions with roundness, and the plurality of protrusions include protrusions connected via a connecting portion and/or protrusions not connected via a connecting portion.

Inventors

• ENDO YOUSUKE
• Sugimoto keijirou
• Izu Yasuko
• KAZUNARI HONDA

Assignees

• ＪＸ金属株式会社

Dates

Publication Date

20260508

Application Date

20240904

Priority Date

20231226

Claims (8)

1. 1. A sputtering target for a magnetic material, wherein the sputtering target has a sputtering region and a non-sputtering region, The surface of the non-sputtering region has a plurality of protrusions with roundness, The plurality of convex portions include convex portions connected via the connecting portion and/or convex portions not connected via the connecting portion.
2. 2. The sputtering target for a magnetic material according to claim 1, wherein, The surface of the non-sputtering region has a spread area ratio Sdr of 4.5 or more.
3. 3. The sputtering target for a magnetic material according to claim 1 or 2, wherein, The surface roughness Sa of the non-sputtering area is 10-40 mu m.
4. 4. The sputtering target for a magnetic material according to claim 1 or 2, wherein, The maximum height Sz of the non-sputtering region is 100-250 μm.
5. 5. The sputtering target for a magnetic material according to claim 1 or 2, wherein, The root mean square height Sq of the non-sputtering area is 3-45 mu m.
6. 6. The sputtering target for a magnetic material according to claim 1 or 2, wherein, The composition of the sputtering target for magnetic material contains at least one of Co, pt, fe, ru, cr, ti, si, zr, B, C, N, al, O, mg, zn, ag, cu, ni, ta, nb, V, W, mn, bi, ge and Ir.
7. 7. A sputtering target assembly for a magnetic material, comprising: a sputtering target for a magnetic material according to claim 1 or 2, and And a backing plate bonded to the magnetic material sputtering target.
8. 8. A method for producing a sputtering target for a magnetic material, wherein, The sputtering target for magnetic material has a sputtering region and a non-sputtering region, The method for manufacturing a sputtering target for a magnetic material comprises a step of forming a plurality of protrusions with roundness on the surface of the non-sputtering region, The plurality of convex portions include convex portions connected via the connecting portion and/or convex portions not connected via the connecting portion.

Description

Sputtering target for magnetic material, sputtering target assembly for magnetic material, and method for producing sputtering target for magnetic material Technical Field The present invention relates to a sputtering target for magnetic material, a sputtering target assembly for magnetic material, and a method for producing a sputtering target for magnetic material, and more particularly, to a sputtering target suitable for producing a film of a mechanical hard disk (HARD DISK DRIVE, HDD). Background For example, a material based on Co, fe, or Ni as a ferromagnetic metal is used in a layer of a hard disk using a perpendicular magnetic recording system, and a composite material composed of a ferromagnetic alloy such as co—cr based, co—pt based, co—cr—pt based, or fe—pt based, and a nonmagnetic inorganic material is often used in a recording layer. In view of high productivity, thin films of magnetic recording media such as hard disks are often produced by sputtering targets composed of the above-mentioned materials. Sputtering is a method in which a surface of a sputtering target serving as a sputtering source is sputtered with accelerated argon ions, particles (sputtered particles) are released from the sputtering target, and the sputtered particles are deposited on a surface of a substrate placed in a position facing each other in advance, whereby a thin film is formed on the surface of the substrate. Some of the sputtered particles may reattach to a predetermined portion of the sputtering target and become a laminate (also referred to as a redeposited film (Redeposition film)). When the redeposited film is peeled off from the sputtering target, there is a problem that particles in sputtering increase and become mixed in the thin film, which causes arcing (abnormal discharge) during sputtering, and the like, which causes a reduction in the product yield. In order to solve such a problem, patent document 1 discloses surface roughening of a region of a sputtering target where a redeposited film is formed by blasting with glass beads. Further disclosed is a method whereby peeling of a redeposited film from a roughened surface can be suppressed. Patent document 2 also discloses roughening the sputtering target. Patent document 2 discloses that the roughening treatment is performed in a range from the outer periphery (0%) to the center of the sputtering target to 2 to 13% of the positions and/or in a range from the center (0%) to the outer periphery to 12 to 33% of the positions. Prior art literature Patent literature Patent document 1 Japanese patent laid-open No. 4-301074 Patent document 2 Japanese patent application laid-open No. 2018-141202 Disclosure of Invention Problems to be solved by the invention Patent documents 1 and 2 each describe only control of the arithmetic average roughness Ra, and have room for improvement from the viewpoint of suppressing peeling of the redeposited film. Accordingly, an object of an embodiment of the present invention is to provide a sputtering target for a magnetic material, a sputtering target assembly for a magnetic material, and a method for producing a sputtering target for a magnetic material, which can satisfactorily suppress delamination of a redeposited film. Solution for solving the problem The above technical problems are solved by the present invention as defined below. (1) A sputtering target for a magnetic material, which has a sputtering region and a non-sputtering region, wherein the surface of the non-sputtering region has a plurality of protrusions with roundness, and the plurality of protrusions include protrusions connected via a connecting portion and/or protrusions not connected via a connecting portion. (2) The sputtering target for a magnetic material according to (1), wherein the expansion area ratio Sdr of the surface of the non-sputtering region is 4.5 or more. (3) The sputtering target for a magnetic material according to (1) or (2), wherein the surface roughness Sa of the non-sputtered region is 10 to 40 μm. (4) The sputtering target for a magnetic material according to any one of (1) to (3), wherein the maximum height Sz of the non-sputtering region is 100 to 250 μm. (5) The sputtering target for a magnetic material according to any one of (1) to (4), wherein the root mean square height Sq of the non-sputtering region is 3 to 45 μm. (6) The sputtering target for a magnetic material according to any one of (1) to (5), wherein the composition contains at least one of Co, pt, fe, ru, cr, ti, si, zr, B, C, N, al, O, mg, zn, ag, cu, ni, ta, nb, V, W, mn, bi, ge and Ir. (7) A sputtering target assembly for a magnetic material comprising the sputtering target for a magnetic material according to any one of (1) to (6), and a backing plate bonded to the sputtering target for a magnetic material. (8) A method for producing a sputtering target for a magnetic material, wherein the sputtering target for a magnetic material has a sputtering region and a non