CN-122003730-A - High frequency amplifier device

Abstract

The invention relates to a high-frequency amplifier device (1) which is suitable for generating an output power of 1 kW for plasma excitation purposes at a frequency of 2 or more MHz, comprising a multi-layer circuit board (2), b two transistors (S1, S2) which are each connected by their first power terminals to a common connection point, in particular to a ground connection point (5), wherein the transistors (S1, S2) are designed in the same way and are arranged on the multi-layer circuit board (2), c. a power transformer (7) whose primary winding (6) is connected to a corresponding second power terminal of the transistors (S1, S2), wherein the primary winding (6) and the secondary winding (4) of the power transformer (7) are each designed as planar conductor tracks arranged in different layers (61, 62) of the multi-layer circuit board (2), d. a heat distributor (50), e. a heat-conducting compensation layer (52) which is fixedly connected by its first face to the circuit board (2) and f) is fixedly connected by its second face (53) to the heat-conducting layer (52).

Inventors

• THOME CHRISTIAN
• P. Fuerzhutz

Assignees

• 通快霍廷格两合公司

Dates

Publication Date

20260508

Application Date

20241023

Priority Date

20231025

Claims (9)

1. 1. A high frequency amplifier device (1) adapted to generate an output power of ≡1 kW for plasma excitation purposes at a frequency of ≡2 MHz, the high frequency amplifier device comprising: a. A multilayer circuit board (2), B. Two transistors (S1, S2) each having a first power terminal and a second power terminal and a control terminal, wherein the two transistors (S1, S2) are connected by their first power terminal, in particular their source terminals, to a common connection point, in particular to a ground connection point (5), wherein the transistors (S1, S2) are designed in the same way and are arranged on the multilayer circuit board (2), C. -a power transformer (7) whose primary winding (6) is connected to a respective second power terminal, in particular a drain terminal, of the transistor (S1, S2), wherein the primary winding (6) and secondary winding (4) of the power transformer (7) are each designed as planar conductor tracks arranged in different layers (61, 62) of the multilayer circuit board (2), D. a heat distributor (50), characterized by: The high-frequency amplifier device (1) further comprises: e. a thermally conductive compensation layer (52) fixedly connected by a first face thereof to the first face of the circuit board, F. -a connection layer (53) fixedly connected by a first face thereof to a second face of the thermally conductive compensation layer (52), and fixedly connected by a second face thereof to the heat distributor (50), the second face of the connection layer being located on a side facing away from the compensation layer (52).
2. 2. The high frequency amplifier device (1) according to claim 1, characterized in that the thermally conductive compensation layer (52) comprises a prepreg or an unreinforced adhesive.
3. 3. The high frequency amplifier device (1) according to any of the preceding claims, characterized in that the connection layer (53) comprises a resin-based adhesive.
4. 4. The high frequency amplifier device (1) according to any of the preceding claims, characterized in that the connection layer (53) comprises an adhesive film.
5. 5. The high frequency amplifier device (1) according to any of the preceding claims, characterized in that the circuit board (2) has at least one expansion gap (55).
6. 6. The high frequency amplifier device (1) according to any of the preceding claims, characterized in that the thermally conductive compensation layer (52) has an expansion gap (55).
7. 7. The high frequency amplifier device (1) according to any of the preceding claims, characterized in that the high frequency amplifier device (1) has a cooling plate (25) with cooling channels (54) for the passage of a cooling liquid.
8. 8. The high frequency amplifier device (1) according to claim 7, characterized in that the cooling plate (25) is connected, in particular in a planar manner, with the heat distributor (50).
9. 9. The high-frequency amplifier device (1) according to any one of the preceding claims, characterized in that the high-frequency amplifier device (1) has a drive circuit for driving the transistor, which drive circuit is in particular also arranged on the circuit board (2).

Description

High frequency amplifier device Technical Field The invention relates to a high-frequency amplifier arrangement which is suitable for generating an output power of 1 kW for plasma excitation purposes at a frequency of 2 MHz or more, comprising two transistors each having a first power terminal and a second power terminal and a control terminal, wherein both transistors are connected by their first power terminal, in particular a source terminal, to a common connection point, in particular to a ground connection point, wherein the transistors are designed in the same way and are arranged on a multilayer circuit board, and a power transformer whose primary winding is connected to a respective second power terminal, in particular to a drain terminal, of the transistors, wherein the primary winding and the secondary winding of the power transformer are each designed as planar conductor tracks arranged in different layers of the multilayer circuit board. Background It is known to use transistors, in particular bipolar transistors or LDMOS transistors, to generate power suitable for igniting a plasma. For plasma excitation purposes, it is particularly desirable to be able to operate the high frequency amplifier device in class F amplifier mode or reverse class F mode. This may lead to considerable heat generation, in particular in case power is reflected from the load and has to be converted into heat in the high frequency amplifier arrangement. It is known from EP3317966B1 that a circuit board can be arranged on a metal cooling plate for cooling. For this purpose, the circuit board in EP3317966B1 has a bottom layer, wherein the bottom layer is designed as a metal layer, which serves as a reference ground. However, the heat transfer from the circuit board to the cooling plate is not optimal. The circuit board generally cannot lie flat on the cooling plate. To compensate for the insufficient heat transfer due to such a disadvantage, a thermal paste is used, but the thermal paste is disadvantageous in the manufacturing process and may age, which may further deteriorate the heat transfer. Disclosure of Invention It is an object of the present invention to provide a high frequency amplifier device that ensures improved heat dissipation. According to the invention, this object is achieved by a high-frequency amplifier arrangement adapted to generate an output power of > 1 kW for plasma excitation purposes at a frequency of > 2 MHz, comprising: a. Two transistors each having a first power terminal and a second power terminal and a control terminal, wherein the two transistors are connected by their first power terminal, in particular their source terminals, to a common connection point, in particular to a ground connection point, wherein the transistors are designed in the same way and are arranged on a multilayer circuit board, B. A power transformer, the primary winding of which is connected to a respective second power terminal, in particular the drain terminal, of the transistor, wherein the primary winding and the secondary winding of the power transformer are each designed as planar conductor tracks arranged in different layers of the multilayer circuit board, C. The heat distributor is used for distributing the heat, D. A heat conduction compensation layer fixedly connected to the first surface of the circuit board through the first surface thereof, E. And the connecting layer is fixedly connected to the second surface of the heat conduction compensation layer through the first surface of the connecting layer, and is fixedly connected to the heat distributor through the second surface of the connecting layer, and the second surface of the connecting layer is positioned on one side away from the compensation layer. By "designed in the same manner" is meant that the transistors are of the same type, e.g., all VMOS transistors, LDMOS transistors, IGBT transistors, of the same design, e.g., P-channel, n-channel, etc., and of the same size, same connection, and same electrical characteristics. By "fixedly attached" is meant that the attachment is strong and durable, such as adhesive, welding, brazing or pressing, and is preferably separable only by high heat and/or mechanical pressure. In particular, the connection may be established as a form fit. This prevents air stagnation and ensures good heat conduction characteristics. The thermally conductive compensation layer is adapted to conduct heat from the circuit board towards the heat distributor. This may compensate for non-uniformities caused by, for example, conductor tracks, windings or contact pads on the bottom of the circuit board and provide a uniform and flat plane in the direction of the heat distributor. The thermally conductive compensation layer may comprise prepreg or unreinforced adhesive. The tie layer may include a resin-based adhesive. The connection layer may be thinner than the thermally conductive compensation layer. The tie layer may include an