CN-122003731-A - RF sputtering of multiple electrodes with optimized plasma coupling through implementation of capacitive and inductive components

Abstract

An apparatus includes a vacuum chamber configured to create a substantially atmospheric vacuum environment for plasma processing, a Radio Frequency (RF) power supply external to the vacuum chamber, an RF matching network operably coupled to the RF power supply, and a plurality of electrodes mounted within the vacuum chamber configured to receive RF power signals from the RF power supply through the RF matching network. During a sputtering operation, RF power signals are simultaneously delivered to multiple electrodes. The plurality of electrodes and the set of electrical components are operable to manage inductive and capacitive reactance for coupling the RF power signal to provide a more desirable plasma coupling during a sputtering operation.

Inventors

• K. NAUMANN
• WATANABE MASAHIRO
• SARA WILLIAMS
• Michael. S. Thornton
• MICHAEL.MEYER

Assignees

• 布勒股份公司
• 先进能源工业公司

Dates

Publication Date

20260508

Application Date

20240802

Priority Date

20230807

Claims (20)

1. 1. An apparatus, the apparatus comprising: a vacuum chamber configured to create a substantially atmospheric vacuum environment for plasma processing; A Radio Frequency (RF) power source located outside the vacuum chamber; an RF match network operatively coupled to the RF power source, and A plurality of electrodes mounted within the vacuum chamber, the plurality of electrodes configured to receive RF power signals from the RF power source through the RF matching network; wherein the RF power signal is delivered to the plurality of electrodes simultaneously during a sputtering operation; wherein the plurality of electrodes and a set of electrical components are operable to manage inductive and capacitive reactance for coupling the RF power signal to provide a more desirable plasma coupling during the sputtering operation.
2. 2. The apparatus of claim 1, wherein the plurality of electrodes each comprise a rotary magnetron assembly comprising a rotatable target barrel housing a magnetron.
3. 3. The apparatus of claim 1, wherein the plurality of electrodes each comprise a planar magnetron assembly.
4. 4. The apparatus of claim 1, wherein the plurality of electrodes comprises a first rotary magnetron assembly and a second rotary magnetron assembly mounted in series within the vacuum chamber.
5. 5. The apparatus of claim 4, wherein: the first rotary magnetron assembly includes a first coupling end and an opposite second coupling end, and The second rotary magnetron assembly includes a first coupling end and an opposite second coupling end.
6. 6. The apparatus of claim 5, the apparatus further comprising: A first coupling device in electrical communication with a first coupling end of the first rotary magnetron assembly; a second coupling device in electrical communication with a second coupling end of the first rotary magnetron assembly; A third coupling device in electrical communication with the first coupling end of the second rotary magnetron assembly, and And a fourth coupling device in electrical communication with the second coupling end of the second rotary magnetron assembly.
7. 7. The apparatus of claim 6, wherein: the first coupling means comprises a first end block, and The second coupling means comprises a second end block; Wherein the first and second coupling ends of the first rotary magnetron assembly are connected to the first and second end blocks, respectively, by respective vacuum sealing arrangements.
8. 8. The apparatus of claim 7, wherein: the third coupling means comprises a third end block, and The fourth coupling means comprises a fourth end block; Wherein the first and second coupling ends of the second rotary magnetron assembly are connected to the third and fourth end blocks, respectively, by respective vacuum sealing arrangements.
9. 9. The apparatus of claim 8, wherein the RF matching network is operably coupled to the first rotary magnetron assembly through the first endblock to provide the RF power signal to the first rotary magnetron assembly.
10. 10. The apparatus of claim 9, further comprising a first electrical component coupled between the first end block and the fourth end block such that the RF power signal is delivered to the second rotating magnetron assembly simultaneously.
11. 11. The apparatus of claim 10, further comprising a second electrical component coupled between the third end block and a ground connection within the vacuum chamber.
12. 12. The apparatus of claim 1, further comprising a set of low frequency or Direct Current (DC) power sources located outside the vacuum chamber and coupled to each electrode of the plurality of electrodes, respectively.
13. 13. The apparatus of claim 12, further comprising a set of filters coupled to outputs of the set of low frequency or DC power sources, respectively.
14. 14. An apparatus, the apparatus comprising: a vacuum chamber configured to create a substantially atmospheric vacuum environment for plasma processing; A Radio Frequency (RF) power source located outside the vacuum chamber; an RF matching network operatively coupled to the RF power source; A set of low frequency or Direct Current (DC) power sources located outside the vacuum chamber, and A plurality of magnetron electrodes rotatably mounted within the vacuum chamber, the plurality of magnetron electrodes configured to receive RF power signals from the RF power source through the RF matching network and low frequency or DC power signals through a low frequency or DC power source; Wherein the RF power signal and the low frequency or DC power signal are delivered to the plurality of magnetron electrodes simultaneously during a sputtering operation; Wherein, to couple the RF power signal and the low frequency or DC power signal, the plurality of magnetron electrodes and a set of electrical components are operable to manage inductive and capacitive reactance for coupling the RF power signal to provide optimized plasma coupling during the sputtering operation.
15. 15. The apparatus of claim 14, wherein the plurality of magnetron electrodes comprises a first rotating magnetron assembly and a second rotating magnetron assembly mounted in series within the vacuum chamber.
16. 16. The apparatus of claim 15, wherein: the first rotary magnetron assembly includes a first coupling end and an opposite second coupling end, and The second rotary magnetron assembly includes a first coupling end and an opposite second coupling end.
17. 17. The apparatus of claim 16, the apparatus further comprising: A first coupling device in electrical communication with a first coupling end of the first rotary magnetron assembly; a second coupling device in electrical communication with a second coupling end of the first rotary magnetron assembly; A third coupling device in electrical communication with the first coupling end of the second rotary magnetron assembly, and And a fourth coupling device in electrical communication with the second coupling end of the second rotary magnetron assembly.
18. 18. The apparatus of claim 17, wherein the RF matching network is operatively coupled to the first rotary magnetron assembly through the first coupling device to provide the RF power signal to the first rotary magnetron assembly.
19. 19. The apparatus of claim 18, wherein the low frequency or DC power source comprises: A first low frequency or DC power source in operable communication with the first rotary magnetron assembly through the second coupling device, and A second low frequency or DC power source in operable communication with the second rotary magnetron assembly through the fourth coupling device.
20. 20. The apparatus of claim 19, the apparatus further comprising: a first low pass filter coupled to an output of the first low frequency or DC power supply, and A second low pass filter coupled to an output of the second low frequency or DC power supply.

Description

RF sputtering of multiple electrodes with optimized plasma coupling through implementation of capacitive and inductive components Cross Reference to Related Applications The present application claims priority from U.S. application Ser. No. 18/366,437, filed 8/7 at 2023, which is incorporated herein by reference in its entirety. Background Magnetron sputtering of targets is well known and is widely used to produce a wide variety of thin films on a variety of substrates. In magnetron sputtering, the material to be sputtered is formed on a planar or tubular target structure. The magnetron assembly is disposed near or within the target structure and supplies a magnetic field such that there is sufficient magnetic flux at the outer surface of the target structure for the sputtering process. Planar magnetron Radio Frequency (RF) sputtering of targets is a known technique. For example, sputtering methods have been developed that involve the simultaneous application of Direct Current (DC) power and RF power, where a superposition of two power sources is used for planar target structures. In addition, multiple connections for single rotatable magnetron RF sputtering of targets are also known. RF magnetron sputtering implemented in current systems utilizes smaller laboratory scale magnetrons or planar magnetrons and is limited by non-uniformity of the deposited layers. For example, application of RF power to a rotating cathode can result in unacceptable non-uniformity in the thickness of the deposited film. Accordingly, there is a need to improve the application of RF power to a rotating sputtering cathode that addresses the problem of non-uniformity of the deposited film. Disclosure of Invention An apparatus includes a vacuum chamber configured to create a substantially atmospheric vacuum environment for plasma processing, a Radio Frequency (RF) power supply external to the vacuum chamber, an RF matching network operably coupled to the RF power supply, and a plurality of electrodes mounted within the vacuum chamber configured to receive RF power signals from the RF power supply through the RF matching network. During a sputtering operation, RF power signals are simultaneously delivered to multiple electrodes. The plurality of electrodes and the set of electrical components are operable to manage inductive and capacitive reactance for coupling the RF power signal to provide optimized plasma coupling during a sputtering operation. Drawings Features of the present invention will become apparent to those skilled in the art from the following description, with reference to the accompanying drawings. Understanding that the drawings depict only typical embodiments and are not therefore to be considered to be limiting in scope, the invention will be described with additional specificity and detail through the use of the accompanying drawings in which: FIG. 1 is a schematic diagram of an apparatus for RF sputtering using multiple electrodes and implemented reactive components, according to one embodiment, and Fig. 2 is a schematic diagram of an apparatus for RF sputtering using multiple electrodes with an implemented reactive component according to another embodiment. Detailed Description In the following detailed description, embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It is to be understood that other embodiments may be utilized without departing from the scope of the present invention. The following detailed description is, therefore, not to be taken in a limiting sense. Apparatus and methods for RF sputtering with optimized inductive and capacitive coupling are described herein. The present apparatus may utilize multiple electrodes (such as magnetron electrodes) and reactive components (such as inductors and capacitors) to optimize RF power coupling for sputtering applications. In some embodiments, the magnetron electrodes may have a magnetic field generated by permanent magnets or electrical coils of electrical wire. The present method optimizes RF power coupling with the plasma between capacitive and inductive, which creates a more desirable impedance and power distribution. Improvements in these characteristics may result in more desirable film properties and deposition profiles and/or rates. This is achieved by an operating space of the device configuration that exploits the desired ion energy and flux. In one embodiment, the device has a configuration of multiple electrodes with multiple connections and integrates an RF matching network and any required electrical balancing components. This ensures a controllable power delivery to each magnetron electrode. The present device has the advantage of utilizing unique power coupling and allowing modification of the coupling of the plasma. The apparatus also provides for combining multiple types of power sources, such as various RF, intermediate frequency AC (MF), DC, or pulsed DC. These techniques have prov