CN-122003961-A - Resistive Random Access Memory (RRAM) device having ruthenium (Ru) containing electrode

Abstract

The present disclosure provides a Resistive Random Access Memory (RRAM) device and a method of fabricating the same. The RRAM device may include a first electrode, a second electrode including ruthenium (Ru), and a switching oxide layer prepared between the first electrode and the second electrode. The first electrode includes at least one of palladium, titanium nitride, and tantalum nitride. The switching oxide layer includes at least one transition metal oxide. In some embodiments, the RRAM device further includes an interface layer disposed between the switching oxide layer and the second electrode and/or an interface layer disposed between the first electrode and the switching oxide layer.

Inventors

• ZHANG MINXIAN
• WU MINGZHE
• GE NING

Assignees

• 特忆智能科技

Dates

Publication Date

20260508

Application Date

20241011

Priority Date

20231011

Claims (20)

1. 1. A Resistive Random Access Memory (RRAM) device, comprising: A first electrode including at least one of palladium, titanium nitride, and tantalum nitride; A second electrode including ruthenium (Ru), and A switching oxide layer is prepared between the first electrode and the second electrode, wherein the switching oxide layer comprises at least one transition metal oxide.
2. 2. The RRAM device of claim 1, wherein the transition metal oxide includes at least one of HfOx and TaOy, wherein x is less than or equal to 2.0 and y is less than or equal to 2.5.
3. 3. The RRAM device of claim 2, wherein the switching oxide layer further includes a doped oxide having a higher chemical stability than the at least one transition metal oxide.
4. 4. The RRAM device of claim 3, wherein the doped oxide includes at least one of Al 2 O 3 、SiO 2 、ZrO 2 、Sc 2 O 3 or Y 2 O 3 .
5. 5. The RRAM device of claim 1, wherein the second electrode further includes at least one layer of CMOS-compatible metal or CMOS-compatible nitride, wherein the CMOS-compatible metal includes at least one of tungsten, titanium, aluminum, and copper, and the CMOS-compatible nitride includes at least one of silicon nitride, aluminum nitride, tantalum nitride, and titanium nitride.
6. 6. The RRAM device of claim 1, further comprising an interface layer disposed between the switching oxide layer and the second electrode, wherein the second electrode comprising ruthenium is fabricated over the interface layer.
7. 7. The RRAM device of claim 6, wherein the interfacial layer between the switching oxide layer and the second electrode comprises a discontinuous film of dielectric material, wherein at least a portion of ruthenium in the second electrode is deposited on the switching oxide layer, the dielectric material comprising at least one of Al 2 O 3 、SiO 2 、Si 3 N 4 、MgO、Y 2 O 3 、Gd 2 O 3 、Sm 2 O 3 、CeO 2 、Er 2 O 3 and La 2 O 3 .
8. 8. The RRAM device of claim 1, further comprising a first interface layer between the first electrode and the switching oxide layer.
9. 9. The RRAM device of claim 1, further comprising a second interface layer between the second electrode and the switching oxide layer.
10. 10. The RRAM device of claim 1, wherein a conductive channel including ruthenium is formed in the switching oxide layer in response to application of a programming voltage to the RRAM device.
11. 11. A method of making an RRAM device, comprising: Preparing a first electrode comprising at least one of palladium, titanium nitride and tantalum nitride; Preparing a switching oxide layer on the first electrode, wherein the switching oxide layer comprises at least one transition metal oxide, and Preparing a second electrode, wherein the second electrode comprises at least ruthenium.
12. 12. The method of claim 11, wherein the transition metal oxide comprises at least one of HfOx and TaOy, wherein x is 2.0 and y is 2.5.
13. 13. The method of claim 12, wherein the switching oxide layer further comprises a doped oxide having a higher chemical stability than the at least one transition metal oxide.
14. 14. The method of claim 13, wherein the doped oxide comprises at least one of Al 2 O 3 、SiO 2 、ZrO 2 、Sc 2 O 3 or Y 2 O 3 .
15. 15. The method of claim 11, wherein preparing the second electrode further comprises preparing a layer of ruthenium.
16. 16. The method of claim 11, wherein fabricating the second electrode further comprises fabricating at least one layer of a CMOS compatible metal or a CMOS compatible nitride, wherein the CMOS compatible metal comprises at least one of tungsten, titanium, aluminum, and copper, and the CMOS compatible nitride comprises at least one of silicon nitride, aluminum nitride, tantalum nitride, and titanium nitride.
17. 17. The method of claim 11, further comprising preparing an interfacial layer on the switching oxide layer, wherein preparing the second electrode comprises depositing ruthenium on the interfacial layer.
18. 18. The method of claim 17, wherein the interfacial layer comprises a discontinuous film of dielectric material, wherein at least a portion of ruthenium in the second electrode is deposited on the switching oxide layer through the discontinuous film of dielectric material.
19. 19. The method of claim 18, wherein the dielectric material comprises at least one of Al 2 O 3 、SiO 2 、ZrO 2 、Sc 2 O 3 or Y 2 O 3 .
20. 20. The method of claim 11, further comprising: preparing a first interface layer comprising a first dielectric material on the first electrode, wherein the switching oxide layer is prepared on the first interface layer, and A second interfacial layer comprising a second dielectric material is prepared on the switching oxide layer, wherein the second electrode is prepared on top of the second interfacial layer.

Description

Resistive Random Access Memory (RRAM) device having ruthenium (Ru) containing electrode Cross Reference to Related Applications The present application claims priority from U.S. patent application Ser. No. 18/485,209, filed on Ser. No. 10/11 of 2023, which is incorporated by reference in its entirety. Technical Field Embodiments of the present disclosure relate generally to Resistive Random Access Memory (RRAM) devices, and more particularly, to RRAM devices having ruthenium (Ru) containing electrodes and methods of making the same. Background A Resistive Random Access Memory (RRAM) device is a two-terminal passive device with an adjustable and non-volatile resistance. By applying appropriate programming signals to the RRAM device, its resistance can be electrically switched between a High Resistance State (HRS) and a Low Resistance State (LRS). The RRAM devices may be used to construct a cross array that may be used to implement in-house computing applications, non-volatile solid state memory, image processing applications, neural networks, and the like. Disclosure of Invention The following is a simplified summary of the disclosure in order to provide a basic understanding of some aspects of the disclosure. This abstract is not an extensive overview of the disclosure, and is intended to neither identify key or critical elements of the disclosure nor delineate the scope of the various embodiments or claims of the disclosure. Its sole purpose is to present some concepts of the disclosure in a simplified form as a prelude to the more detailed description that is presented later. In accordance with one or more aspects of the present disclosure, a Resistive Random Access Memory (RRAM) device includes a first electrode, a second electrode including ruthenium (Ru), and a switching oxide layer prepared between the first electrode and the second electrode. The first electrode includes at least one of palladium, titanium nitride, and tantalum nitride. The switching oxide layer includes at least one transition metal oxide. In some embodiments, the transition metal oxide includes at least one of HfOx and TaOy, where x≤2.0, and y≤2.5. In some embodiments, the switching oxide layer further comprises a doped oxide having a higher chemical stability than the at least one transition metal oxide. In some embodiments, the doped oxide includes at least one of Al 2O3、SiO2、ZrO2、Sc2O3 or Y 2O3. In some embodiments, the second electrode further comprises at least one layer of CMOS compatible metal or CMOS compatible nitride. The CMOS compatible metal includes at least one of tungsten, titanium, aluminum, and copper. The CMOS compatible nitride includes at least one of silicon nitride, aluminum nitride, tantalum nitride, and titanium nitride. In some embodiments, the RRAM device further includes an interface layer disposed between the switching oxide layer and the second electrode, wherein the ruthenium-containing second electrode is fabricated on the interface layer. In some embodiments, the interfacial layer comprises a discontinuous film of dielectric material, wherein at least a portion of ruthenium in the second electrode is deposited on the switching oxide layer. The dielectric material includes at least one of ：Al2O3、SiO2、Si3N4、MgO、Y2O3、Gd2O3、Sm2O3、CeO2、Er2O3 and La 2O3. In some embodiments, the RRAM device further includes a first interface layer disposed between the first electrode and the switching oxide layer. In some embodiments, the RRAM device further includes a second interface layer disposed between the second electrode and the switching oxide layer. In some embodiments, a conductive channel including ruthenium is formed in the switching oxide layer in response to application of a programming voltage to the RRAM device. In accordance with one or more aspects of the present disclosure, a method of fabricating an RRAM device includes fabricating a first electrode including at least one of palladium, titanium nitride, or tantalum nitride, fabricating a switching oxide layer on the first electrode, wherein the switching oxide layer includes at least one transition metal oxide, and fabricating a second electrode including ruthenium. In some embodiments, preparing the second electrode comprises preparing a layer of ruthenium. In some embodiments, preparing the second electrode further comprises preparing at least one layer of a CMOS compatible metal or a CMOS compatible nitride, wherein the CMOS compatible metal comprises at least one of tungsten, titanium, aluminum, and copper, and the CMOS compatible nitride comprises at least one of silicon nitride, aluminum nitride, tantalum nitride, and titanium nitride. In some embodiments, the method further comprises preparing an interfacial layer on the switching oxide layer, wherein preparing the second electrode comprises depositing ruthenium on the interfacial layer. In some embodiments, the interfacial layer comprises a discontinuous film of dielectric material, wherein at