CN-122003967-A - Semiconductor device and method for manufacturing semiconductor device

Abstract

The semiconductor device is provided with a semiconductor substrate, a light-transmitting layer that is arranged on a first surface side of the semiconductor substrate and transmits light of a predetermined wavelength, a rewiring layer that is formed at least partially on the outer side in the planar direction of the semiconductor substrate, a molded part that integrates at least the semiconductor substrate and the light-transmitting layer on a second surface side opposite to the first surface, a through hole that is formed in the light-transmitting layer at a position opposite to an electrode of the semiconductor substrate, and a wiring part that electrically connects the electrode and the rewiring layer.

Inventors

• NAKAGAWA KANAE
• TAKAOKA YUJI

Assignees

• 索尼半导体解决方案公司

Dates

Publication Date

20260508

Application Date

20240828

Priority Date

20231013

Claims (12)

1. 1. A semiconductor device, comprising: A semiconductor substrate; a light transmission layer which is arranged on a first surface side of the semiconductor substrate and transmits light having a predetermined wavelength; a rewiring layer, at least a part of which is formed on the outer side in the plane direction of the semiconductor substrate; a mold portion integrating at least the semiconductor substrate and the light-transmitting layer on a second surface side opposite to the first surface; a through hole provided in the light transmission layer at a position opposed to the electrode of the semiconductor substrate, and And a wiring portion electrically connecting the electrode and the rewiring layer.
2. 2. The semiconductor device according to claim 1, wherein The light-transmitting layer and the rewiring layer are integrated by the molding portion to be arranged flush with each other on the first surface side, and The wiring portion is arranged along a planar direction of the light transmissive layer.
3. 3. The semiconductor device according to claim 1, wherein Positioning holes for positioning are formed in the light transmissive layer.
4. 4. The semiconductor device according to claim 3, wherein Three of the positioning holes are formed in the light transmissive layer.
5. 5. The semiconductor device according to claim 1, further comprising: a second rewiring layer formed on the second surface side of the molding part, and A connection portion formed in the molding portion and electrically connecting the rewiring layer and the second rewiring layer.
6. 6. The semiconductor device according to claim 1, further comprising: a second rewiring layer formed inside the molding part, and A connection portion formed in the molding portion and electrically connecting the rewiring layer and the second rewiring layer.
7. 7. The semiconductor device according to claim 1, wherein The molded portion is formed flush with a front surface of the light-transmitting layer on the first surface side, and The rewiring layer is arranged on the outer side of the first surface side of the molded part in the plane direction of the semiconductor substrate.
8. 8. The semiconductor device according to claim 7, wherein The wiring portion electrically connects the electrode and a wiring layer closest to the second surface side of the rewiring layers.
9. 9. The semiconductor device according to claim 1, wherein The light-transmitting layer is formed to cover the semiconductor substrate and the first surface side of the rewiring layer.
10. 10. The semiconductor device according to claim 9, further comprising A second through hole provided in the light-transmitting layer at a position opposed to the rewiring layer, wherein The wiring portion electrically connects the electrode and the rewiring layer via the through hole and the second through hole.
11. 11. The semiconductor device according to claim 1, wherein The semiconductor substrate is an imaging element in which a plurality of pixels that convert incident light into an electrical signal are arranged in, for example, a two-dimensional matrix.
12. 12. A method of manufacturing a semiconductor device, comprising: forming a light transmission layer transmitting light having a predetermined wavelength on a first surface side of the semiconductor substrate; Forming a through hole in the light-transmitting layer at a position opposed to the electrode of the semiconductor substrate; Disposing a rewiring layer on the temporary substrate, and disposing the semiconductor substrate and the light-transmitting layer in a face-down manner; integrating the semiconductor substrate, the light transmitting layer, and the rewiring layer by a molding portion; Separating the integrated semiconductor substrate, light transmitting layer, rewiring layer and molding part from the temporary substrate, and The electrode of the semiconductor substrate and the rewiring layer are connected by a wiring portion.

Description

Semiconductor device and method for manufacturing semiconductor device Technical Field The present technology relates to a semiconductor device including a semiconductor substrate and a method of manufacturing the semiconductor device. Background Conventionally, there has been proposed an imaging device including an imaging element, a molded portion formed around the imaging element except for a pixel formation surface of the imaging element, and a rewiring layer provided on a pixel formation surface side of the imaging element and the molded portion (for example, patent document 1). By this image forming apparatus, reduction in size and height can be achieved. List of references Patent literature Patent document 1 Japanese patent application laid-open No. 2019-216187 Disclosure of Invention Problems to be solved by the invention In the above-described image forming apparatus, when the rewiring layer is generated, the rewiring layer is formed after the pixel formation surface of the image forming element is formed by the protective film. Then, the protective film is removed after the rewiring layer is formed. However, since the protective film is exposed to heat or a chemical solution during formation of the rewiring layer, there is a possibility that the protective film cannot be completely removed in the removing step. In addition, it is considered that the protective film is not removed, but in this case, there is a possibility that the desired light transmittance and refractive index cannot be satisfied due to the influence of exposure to heat or a chemical solution in the step of forming the rewiring layer. The present technology has been completed in view of such a problem, and an object thereof is to achieve a reduction in size and height while protecting a pixel formation face of a semiconductor substrate at the time of manufacture. Solution to the problem The semiconductor device according to the present technology includes a semiconductor substrate, a light transmitting layer that is disposed on a first surface side of the semiconductor substrate and transmits light having a predetermined wavelength, a rewiring layer at least a portion of which is formed outside in a planar direction of the semiconductor substrate, a molding portion that integrates at least the semiconductor substrate and the light transmitting layer on a second surface side opposite to the first surface, a through hole provided in the light transmitting layer at a position opposite to an electrode of the semiconductor substrate, and a wiring portion that electrically connects the electrode and the rewiring layer. With this configuration, the possibility that the pixel formation surface of the semiconductor substrate is exposed to the outside in the manufacturing step of the semiconductor device can be reduced. Drawings Fig. 1 is a schematic cross-sectional view illustrating a configuration of an image forming apparatus according to a first embodiment. Fig. 2 is a diagram illustrating a manufacturing method of the image forming apparatus according to the first embodiment. Fig. 3 is a diagram illustrating a manufacturing method of the image forming apparatus according to the first embodiment. Fig. 4 is a diagram illustrating a manufacturing method of the image forming apparatus according to the first embodiment. Fig. 5 is a diagram illustrating a configuration of an imaging element and a light transmissive layer according to a first application example of the first embodiment. Fig. 6 is a diagram illustrating a manufacturing method of an imaging device according to a first application example of the first embodiment. Fig. 7 is a diagram illustrating a manufacturing method of an imaging device according to a first application example of the first embodiment. Fig. 8 is a diagram illustrating a configuration of an imaging apparatus according to a second application example of the first embodiment. Fig. 9 is a diagram illustrating a configuration of an imaging apparatus according to a third application example of the first embodiment. Fig. 10 is a schematic sectional view illustrating a configuration of an image forming apparatus according to a second embodiment. Fig. 11 is a diagram illustrating a manufacturing method of an image forming apparatus according to a second embodiment. Fig. 12 is a diagram illustrating a manufacturing method of an image forming apparatus according to a second embodiment. Fig. 13 is a schematic sectional view illustrating a configuration of an image forming apparatus according to a third embodiment. Fig. 14 is a diagram illustrating a manufacturing method of an image forming apparatus according to a third embodiment. Fig. 15 is a diagram illustrating a manufacturing method of an image forming apparatus according to a third embodiment. Detailed Description Hereinafter, embodiments will be described in the following order. <1. First embodiment > [1.1 Arrangement of image Forming apparatus ] [1.2. Method of ma