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CN-122004540-A - Heating element with step-type resistance temperature characteristic and preparation method thereof

CN122004540ACN 122004540 ACN122004540 ACN 122004540ACN-122004540-A

Abstract

The application discloses a heating element with step-type resistance temperature characteristics and a preparation method thereof, wherein the heating element comprises a matrix and a resistance body, and the resistance body is connected with the matrix; the resistance body comprises a thin-layer reduction layer and a nitride layer, wherein the thin-layer reduction layer is connected with the substrate and has a thickness smaller than that of the substrate, and the nitride layer is formed on the surface of the thin-layer reduction layer. The resistance body can realize step mutation from low resistance to high resistance through the thin reduction layer and the nitride layer, does not need an external sensor or a control circuit, does not need to depend on resistance-temperature characteristics of metal, can depend on a heating body to respond to realize temperature self-adjustment after being electrified, and can also be designed into an ultrathin structure due to the heat concentration design of the resistance body, and has the advantages of low self-heating consumption energy and short jump response time.

Inventors

  • ZHONG KEJUN
  • GUO CHENG
  • GUO XIAOYI
  • SHENG KESONG
  • CUI YUQI
  • WANG ZHIGUO
  • DENG TINGJIAN
  • ZHU LIANGYONG

Assignees

  • 深圳白沙科技有限责任公司
  • 湖南中烟工业有限责任公司

Dates

Publication Date
20260512
Application Date
20260410

Claims (12)

  1. 1. The heating body with the step-type resistance temperature characteristic is characterized by comprising a base body and a resistance body, wherein the resistance body is connected with the base body, the resistance body comprises a thin-layer reduction layer and a nitride layer, the thin-layer reduction layer is connected with the base body and is smaller than the thickness of the base body, and the nitride layer is formed on the surface of the thin-layer reduction layer.
  2. 2. The heating element with step-type resistance temperature characteristics according to claim 1, wherein the thickness of the substrate is 0.03 mm-0.15 mm, the thin-layer-reducing layer is obtained by reducing the thickness of the substrate, and the thickness of the thin-layer-reducing layer is 30% -70% of the thickness of the substrate.
  3. 3. The heating element having a step resistance temperature characteristic as recited in claim 1, wherein the thickness of the nitride layer is 0.2 μm to 2 μm.
  4. 4. A heat-generating body having a stepped resistance temperature characteristic according to claim 1, wherein the nitride layer comprises AlN and/or CrN.
  5. 5. The heat generating body having a stepped resistance temperature characteristic according to any one of claims 1 to 4, wherein the material of the base body and the resistance body is selected from iron-chromium-aluminum.
  6. 6. A heat generating body with stepped resistance temperature characteristics according to any one of claims 1 to 4, wherein the resistive element is provided in a middle region of a conductive trace of the heat generating body.
  7. 7. The heat generating body with stepped resistance temperature characteristic according to any one of claims 1 to 4, wherein the heat generating body is provided with at least one corner, and the resistance body is provided at the corner of the heat generating body.
  8. 8. A heat generating body having a stepped resistance temperature characteristic according to any one of claims 1 to 4, wherein the number of resistance bodies is at least two, wherein the thicknesses of the thinned layers of the two resistance bodies are different, and/or the thicknesses of the nitrided layers of the two resistance bodies are different.
  9. 9. A heat generating body with step resistance temperature characteristics as described in any one of claims 1 to 4, wherein the jump temperature of the resistive element is 300 ℃ to 1000 ℃.
  10. 10. The method for producing a heat-generating body having a step resistance temperature characteristic as recited in any one of claims 1 to 9, comprising the steps of: s1, performing half etching on at least one area of the substrate to form the thin-layer reduction; S2, nitriding the thin-layer reducing layer, and forming the nitrided layer on the surface of the thin-layer reducing layer to obtain the heating body.
  11. 11. The preparation method of the silicon nitride film according to claim 10, wherein the nitriding treatment in the step S2 specifically comprises the steps of covering a mask on the substrate, and keeping the temperature of the thinning area at 700-800 ℃ for 2-30 min in an ammonia atmosphere.
  12. 12. The preparation method of the silicon nitride layer according to claim 10, wherein the nitriding treatment in the step S2 specifically comprises the steps of placing the substrate in an ammonia atmosphere, and scanning by focusing pulse laser on a region to be thinned on the substrate to obtain the silicon nitride layer, wherein the wavelength of the pulse laser is 355nm or 532nm, the power density of the pulse laser is 1-10W/mm 2 , and the scanning speed is 5-20 mm/S.

Description

Heating element with step-type resistance temperature characteristic and preparation method thereof Technical Field The application relates to the technical field of novel tobacco heating elements, in particular to a heating element with step-type resistance temperature characteristics and a preparation method thereof. Background In the existing novel tobacco field, products for obtaining aerosol by resistance heating are subdivided into heating cigarette appliances and electronic cigarettes. The electronic cigarette adopts a nickel-chromium heating wire, an iron-chromium-aluminum heating wire or an iron-chromium-aluminum conductive track resistor etched by a stainless steel sheet as a heating body, and is assisted by a capillary liquid guide material, and liquid tobacco tar is evaporated through the heating body to obtain aerosol. The adopted resistance type heating element has extremely low cost, low energy consumption and quick temperature rise. Taking iron chromium aluminum as an example, a high temperature of 1000 ℃ is sufficient within one second. The excessively rapid temperature rise speed and the extremely low Temperature Coefficient of Resistance (TCR) (+/-20 ppm/° C) thereof lead to almost no timely capturing of signals by a control circuit so as to accurately control the temperature. The existing electronic cigarette appliance controls the temperature of the heating element through the boiling point of liquid tobacco tar, and the tobacco tar is volatilized continuously to take away the heat of the heating element, so that the temperature of the heating element is not too high. The cigarette heating device heats the solid and semi-solid tobacco mixture through a heating resistor and controls the solid and semi-solid tobacco mixture to bake at a specific temperature to obtain aerosol, and the heating resistor controls the temperature through coating metal materials with larger TCR (such as palladium and the like) on a base material (ceramic, glass and metal are pre-insulated), controlling the temperature by utilizing the resistance-temperature characteristic, or controlling the temperature by utilizing an external sensor at the resistance and the like. The method is mature and easy to obtain, but has the defect that the heating resistor substrate needs enough strength, and needs to have a certain thickness, for example, the limiting thickness of a metal tube is not less than 0.15mm, the thickness of a metal sheet is not less than 0.3mm, and the thickness of a ceramic sheet and a tube is not less than 0.5mm. The thickness requirement not only causes that the heating resistor consumes more energy, but also has higher cost of the heating element prepared by the process, and is inconvenient to be arranged in an aerosol product to be used as a consumable. Disclosure of Invention The invention provides a heating element with step-type resistance temperature characteristics and a preparation method thereof, which are used for solving the technical problem that the temperature of the heating element cannot be accurately controlled in the prior art. In order to achieve the above purpose, the technical scheme provided by the invention is as follows: According to a first aspect of the invention, a heating element with a step-type resistance temperature characteristic is provided, and the heating element comprises a substrate and a resistance body, wherein the resistance body is connected with the substrate, the resistance body comprises a thin-layer reduction layer and a nitride layer, the thin-layer reduction layer is connected with the substrate and has a thickness smaller than that of the substrate, and the nitride layer is formed on the surface of the thin-layer reduction layer. Further, the thickness of the substrate is 0.03-0.15 mm, the thin-layer is obtained after the thickness of the substrate is reduced, and the thickness of the thin-layer is 30-70% of the thickness of the substrate. Further, the thickness of the nitride layer is 0.2-2 μm. Further, the nitride layer comprises AlN and/or CrN. Further, the material of the substrate and the resistance body is selected from iron-chromium-aluminum. Further, the resistive element is disposed in a middle region of the conductive trace of the heater. Further, the heating body is provided with at least one corner, and the resistance body is arranged at the corner of the heating body. Further, the number of the resistance bodies is at least two, wherein the thickness of the thin reduction layers of the two resistance bodies is different, and/or the thickness of the nitride layers of the two resistance bodies is different. Further, the jump temperature of the resistance variation is 300-1000 ℃. In a second aspect of the present invention, there is provided a method for producing the above-mentioned heat generating body, comprising the steps of: s1, performing half etching on at least one area of the substrate to form the thin-layer reduction; S2, nitriding the