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CN-122006901-A - Waste gas treatment device for wafer cleaning equipment

CN122006901ACN 122006901 ACN122006901 ACN 122006901ACN-122006901-A

Abstract

The application relates to the technical field of semiconductor equipment, and particularly discloses an exhaust gas treatment device for wafer cleaning equipment, which comprises a box body, wherein a negative plate is arranged in the box body in a lifting manner and a positive plate is arranged in a rotating manner, a charging area, an adjusting area and a collecting area are divided in the box body, the positive plate and the negative plate are positioned in the adjusting area, a first power part for driving the negative plate to move is arranged in the box body, and a collecting assembly for collecting particles and an adjusting assembly for adjusting the strength of an electric field are arranged in the box body. According to the application, the electric field intensity is adjusted through the negative plate arranged in a lifting manner and the positive plate arranged in a rotating manner, so that the particulate matters with different sizes are recovered, and the effect of removing waste gas is improved.

Inventors

  • CHEN GUANGYONG
  • MA ZHIMIN
  • CHENG KANG

Assignees

  • 晶芯半导体(黄石)有限公司

Dates

Publication Date
20260512
Application Date
20260319

Claims (8)

  1. 1. The waste gas treatment device for the wafer cleaning equipment is characterized by comprising a box body (1), wherein a negative plate (32) is arranged in the box body (1) in a lifting manner and a positive plate (31) is arranged in a rotating manner, a charging area (21), an adjusting area (22) and a collecting area (23) are divided in the box body (1), the positive plate (31) and the negative plate (32) are positioned in the adjusting area (22), a first power part (35) for driving the negative plate (32) to move is arranged in the box body (1), and a collecting assembly for collecting particles and an adjusting assembly for adjusting the strength of an electric field are arranged in the box body (1); When large particles are introduced, the first power part (35) drives the negative plate (32) to be close to the positive plate (31), the distance between the positive plate (31) and the negative plate (32) is shortened, and the large particles pass through the charging area (21) and the regulating area (22) and are introduced into a collecting assembly in the collecting area (23); when small particles are introduced, the first power part (35) drives the negative plate (32) to be far away from the positive plate (31), the distance between the positive plate (31) and the negative plate (32) is increased, and the small particles pass through the charging area (21) and the adjusting area (22) and are introduced into a collecting assembly in the collecting area (23); When large particles and small particles are simultaneously introduced, the regulating assembly regulates the deflection angle of the positive plate (31), so that the positive plate (31) and the negative plate (32) are inclined, and the large particles and the small particles pass through the charging area (21) and the regulating area (22) and are simultaneously introduced into the collecting assembly.
  2. 2. The exhaust gas treatment device for a wafer cleaning apparatus according to claim 1, wherein the collecting assembly comprises a collecting box (41) slidably arranged in the box body (1), a collecting opening (411) is formed in the collecting box (41), a collecting plate (42) movably attached to the collecting opening (411) is slidably arranged in the box body (1), and the collecting assembly further comprises a driving member for driving the collecting plate (42) to move and a synchronizing member for driving the positive plate (31) to rotate.
  3. 3. The exhaust gas treatment device for a wafer cleaning apparatus according to claim 1, wherein the driving member comprises a connecting rod (432) fixedly connected to the collecting plate (42) and a moving opening (433) formed in the case (1), the collecting plate (42) is movably attached to the moving opening (433), a second power member (431) is slidably disposed in the case (1), and an output end of the second power member (431) is disposed at an end portion of the collecting plate (42).
  4. 4. The exhaust gas treatment device for a wafer cleaning apparatus according to claim 1, wherein the synchronizing member comprises a rack (442) slidably disposed in the case (1), a gear (443) rotatably disposed in the case (1), a driving wheel (444) coaxially fixedly connected to the gear (443), and a driven wheel (445) rotatably disposed in the case (1), the gear (443) is meshed with the rack (442), the driving wheel (444) is meshed with the driven wheel (445), a rotating shaft (446) is fixedly connected to the positive plate (31), the driven wheel (445) is coaxially fixedly connected to an end portion of the rotating shaft (446), one end of the rack (442) is disposed on the collecting plate (42), a third power member (441) is disposed in the case (1), an output end of the third power member (442) is disposed on one end of the rack (447), a receiving groove (42) is formed in the case (1), and the collecting plate (42) is connected to the receiving groove (447).
  5. 5. The exhaust gas treatment device for wafer cleaning equipment according to claim 1, wherein the box body (1) is provided with a first ventilation pipe (11) and a second ventilation pipe (12) side by side, the arrangement direction of the first ventilation pipe (11) and the second ventilation pipe (12) is parallel to the width direction of the box body (1), the adjusting assembly comprises a first ventilation plate (111) and a second ventilation plate (121) which are rotatably arranged in the first ventilation pipe (11) and the second ventilation pipe (12), a first sensor (112) and a second sensor (122) are respectively arranged on the first ventilation plate (111) and the second ventilation plate (121), and the first ventilation pipe and the second ventilation pipe (12) are both communicated with the charging area (21).
  6. 6. The exhaust gas treatment device for a wafer cleaning apparatus according to claim 1, wherein the housing (1) is provided with an exhaust duct (13), the adjusting assembly further comprises an exhaust plate (131) rotatably disposed in the exhaust duct (13), a third sensor (132) is disposed on the exhaust plate (131), and the exhaust duct (13) is communicated with the adjusting area (22).
  7. 7. The exhaust gas treatment device for wafer cleaning equipment according to claim 1, wherein a plurality of discharging rods (33) are uniformly arranged in the box body (1) at intervals, the arrangement direction of the discharging rods (33) is perpendicular to the exhaust gas direction, two auxiliary electrode plates (34) are symmetrically arranged in the box body (1), the discharging rods (33) are positioned between the two auxiliary electrode plates (34), and a channel formed by the two auxiliary electrode plates (34) is the charging area (21).
  8. 8. The exhaust gas treatment device for a wafer cleaning apparatus according to claim 1, wherein a flow dividing plate (14) is provided in the case (1), the collecting box (41) is provided with a partition plate (412) correspondingly, and the partition plate (412) divides the collecting box (41) into two collecting chambers (413).

Description

Waste gas treatment device for wafer cleaning equipment Technical Field The application relates to the technical field of semiconductor equipment, in particular to an exhaust gas treatment device for wafer cleaning equipment. Background In the semiconductor manufacturing process, impurities such as particulate contaminants, organic residues, metal ions, and natural oxide layers are inevitably attached to the wafer surface. These contaminants can affect subsequent processing of the wafer, and therefore wafer cleaning is an integral part of the manufacturing process. At present, wet cleaning equipment is mainly adopted for cleaning, and the core process is an RCA cleaning method based on chemical liquid medicine, wherein the treatment steps of removing organic pollutants, removing particles and partial metals by using SPM, removing metal ions by using HPM, removing oxide layers by using DHF and the like are adopted, and ultrapure water rinsing and vapor drying are adopted. The method comprises the steps of adopting cleaning equipment to clean a wafer, generating complex waste gas in the process of cleaning the wafer, adopting an electrostatic dust collector to recycle the waste gas in the prior art, enabling particles to be charged through a corona discharge point by a dry electrostatic dust collector, driving the dry electrostatic dust collector to be adsorbed on a dust collecting polar plate under the action of an electric field force, enabling accumulated dust to fall off to an ash bucket through periodic mechanical vibration, driving the wet electrostatic dust collector to be adsorbed on the inner wall of the dust collecting polar tube under the action of the electric field force, and flushing away the paved particles by liquid in a spraying mode. When the existing electrostatic dust collector is used for treating the continuously discharged waste gas, particles are continuously accumulated on a dust collecting polar plate or a dust collecting polar pipe in the process that the waste gas continuously passes through an electric field, and when an accumulation layer reaches a certain thickness, the high-speed continuous waste gas can be used for re-winding the trapped but inadequately adhered particles in the accumulation layer into the waste gas, so that part of the particles are directly taken out of an equipment outlet by the waste gas, the dust collection efficiency is reduced along with the running time, and high-value particles in the waste gas are difficult to continuously, efficiently and stably recycle, so that improvement is needed. Disclosure of Invention In order to solve the problems that the existing electrostatic dust collection device has low dust collection efficiency on waste gas of wafer cleaning equipment and is difficult to continuously and efficiently recycle and treat, the application provides the waste gas treatment device for the wafer cleaning equipment. The application provides an exhaust gas treatment device for wafer cleaning equipment, which adopts the following technical scheme: The utility model provides a waste gas treatment device for wafer cleaning equipment, includes the box, is provided with the negative plate in the box and rotates and be provided with the positive plate, divide in the box and have charge district, regulation district and collection district, the positive plate with the negative plate is located in the regulation district, be provided with the drive in the box the first power spare that the negative plate removed, the box is inside to be provided with and is used for collecting the collection subassembly of particulate matter and be provided with the regulation subassembly that is used for adjusting electric field intensity; when large particles are introduced, the regulating component drives the negative plate to be close to the positive plate, the distance between the positive plate and the negative plate is shortened, and the large particles pass through the charging area and the regulating area and are introduced into the collecting component in the collecting area; when small particles are introduced, the regulating component drives the negative plate to be far away from the positive plate, the distance between the positive plate and the negative plate is increased, and the small particles pass through the charging area and the regulating area and are introduced into the collecting component in the collecting area; When large particles and small particles are simultaneously introduced, the regulating component regulates the deflection angle of the positive plate, so that the positive plate and the negative plate are inclined, and the large particles and the small particles pass through the charging area and the regulating area and are simultaneously introduced into the collecting component. Through adopting above-mentioned technical scheme, when waste gas lets in the box, first entering charge district, the negative ion collision in the charge dist