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CN-122007089-A - Cleaning method for TP Sensor binding area

CN122007089ACN 122007089 ACN122007089 ACN 122007089ACN-122007089-A

Abstract

The invention relates to the technical field of manufacturing processes for binding a touch module and an FPC, in particular to a cleaning method for a TP Sensor binding area, which is suitable for the touch module in which a TP Sensor is thermally pressed and bound with a TP FPC and/or an FPC through an ACF and a polaroid and an IC exist in the adjacent area. According to the method, a cleaning window is formed through shielding, a local sealing cavity is established by a sealing cleaning head, dry removal of ion neutralization and negative pressure suction linkage, wet removal of micro-droplet impact cleaning and synchronous recovery, low-temperature plasma or UV ozone activation are carried out in the cavity, pollution index PI is calculated based on particle counting and a contact angle or surface energy index, on-line closed loop release control is carried out by combining the maximum allowable delay time T, so that the risk of recontamination and medium overflow is reduced, and the binding consistency and reliability of ACF are improved.

Inventors

  • CHENG HAOMING
  • AN MINGJING
  • Yao Canjian
  • YU MEIXIANG

Assignees

  • 赣州市同兴达电子科技有限公司

Dates

Publication Date
20260512
Application Date
20251225

Claims (10)

  1. 1. The method for cleaning the TP Sensor binding area is suitable for the manufacturing process of a touch module, the touch module comprises a glass substrate, TP sensors arranged on the glass substrate, a TP FPC and/or FPC electrically connected with the TP sensors, an anisotropic conductive film ACF for realizing the electrical connection, and an IC is arranged on the glass substrate adjacent to the binding area, and the method is characterized by comprising the following steps: Step S1, shielding a cleaning window from a sensitive area, and arranging a shielding component on the periphery of a binding area of a TP Sensor to form the cleaning window, wherein the shielding component is used for limiting a cleaning medium to enter a polaroid area and/or an IC area; S2, establishing a local sealing cavity, attaching a sealing cleaning head to the cleaning window, and enabling the sealing cleaning head to form a local sealing cavity with the surface of the glass substrate, wherein the sealing cleaning head at least comprises a supply channel and a recovery channel, and the recovery channel is communicated with a negative pressure source; Step S3, dry removal, namely performing ion neutralization and negative pressure suction linkage removal in the local sealed cavity to remove loose particles and reduce electrostatic re-adsorption; Step S4, wet type micro-impact cleaning and synchronous recovery, performing micro-droplet impact spraying or micro-coating cleaning liquid on the binding area in the local sealing cavity, synchronizing with the negative pressure suction to recover liquid and dirt-carrying airflow, and then performing blow-drying or vacuum drying; S5, activating at low temperature, and performing low-temperature plasma treatment or UV ozone treatment on the binding region to improve the surface energy; And S6, judging whether an online closed loop is released from a time window, acquiring at least two types of online indexes of a binding area, and calculating a pollution index PI, wherein the online indexes at least comprise particle counting indexes and contact angles or surface energy indexes, comparing the pollution index PI with a threshold value, releasing the ACF attachment and hot-press binding when the pollution index PI meets the threshold value, limiting a maximum allowable delay time T from the end of the step S5 to the start of the hot-press binding, and returning to the step S3 and/or the step S4 for reprocessing if the threshold value is not met or exceeds the time T.
  2. 2. The method of cleaning TP Sensor binding area according to claim 1, wherein the shielding component comprises a disposable masking tape and a reusable mask frame, and the distance between the opening boundary of the mask frame and the outer edge of the binding area is 0.1mm to 2.0mm.
  3. 3. The method of cleaning a TP Sensor binding area of claim 1, wherein the sealing cleaning head comprises an elastic sealing ring and a hard support ring, the elastic sealing ring having a shore hardness of 20A to 70A to achieve a stable seal without damaging the TP Sensor surface.
  4. 4. The method for cleaning TP Sensor binding area according to claim 1, wherein the negative pressure suction in the dry removal ranges from 5kPa to 60kPa, and the ion neutralization and suction are performed for a period of 2s to 30s.
  5. 5. The method for cleaning TP Sensor binding area according to claim 1, wherein the wet micro-impact cleaning employs micro-droplet impact with droplet diameter of 10 to 200 μm and jet speed of 5 to 80m/s, jet angle of 10 to 80 degrees, and negative pressure recovery is performed while jetting.
  6. 6. The method of claim 1, wherein the cleaning solution comprises a mixture of deionized water and an alcohol solvent, the alcohol solvent comprising isopropanol and/or ethanol, the alcohol solvent having a volume fraction of 10% to 90%.
  7. 7. The method for cleaning TP Sensor bonding area according to claim 1, further comprising a directional wiping step after the wet micro-impact cleaning, wherein the wiping material is a dust-free cloth or a dust-free cotton swab, the wiping times are 1 to 5 times, and the wiping direction is one-way wiping or cross wiping along the long side direction of the bonding area.
  8. 8. The method for cleaning a TP Sensor bonding area according to claim 1, wherein the low temperature plasma treatment gas is air, oxygen, nitrogen, argon or a mixture thereof, the treatment power is 10W to 300W, and the treatment time is 1s to 30s.
  9. 9. The method for cleaning TP Sensor binding area according to claim 1, wherein the maximum allowable delay time T is 1min to 60min, and the allowable delay time T takes a larger value interval when the online contact angle index is 45 degrees or less, and takes a smaller value interval when the contact angle index is close to the upper threshold.
  10. 10. The method for cleaning TP Sensor binding area according to claim 1, wherein the recovery channel of step S4 is configured with a liquid-gas separator to recover the cleaning liquid, and the cleaning liquid is recycled or discharged in a concentrated manner after particles are removed by a filtration module.

Description

Cleaning method for TP Sensor binding area [ Field of technology ] The invention relates to the technical field of manufacturing processes for binding a touch module and an FPC, in particular to a cleaning method for a TP Sensor binding area. [ Background Art ] In the touch module, the TP Sensor is electrically connected with the TP FPC and/or the FPC is generally adhered by ACF and is bonded by hot pressing. If particles, fibers, greasy dirt, ion residues or cleaning residues exist on the surface of the binding area, voids, abnormal contact resistance, open short circuit and reliability failure are easily caused. Because the binding area is adjacent to sensitive structures such as the polaroid, the IC and the like, conventional open wiping or spraying is easy to cause cleaning medium overflow, secondary pollution or adverse effect on the sensitive structures. [ Invention ] In order to overcome the above problems, the present invention provides a cleaning method for TP Sensor binding area, which can effectively solve the above problems. The invention provides a cleaning method of a TP Sensor binding area, which is suitable for a manufacturing process of a touch module, wherein the touch module comprises a glass substrate, a TP Sensor arranged on the glass substrate, a TP FPC and/or FPC electrically connected with the TP Sensor, an anisotropic conductive film ACF for realizing electric connection, and an IC arranged on the glass substrate adjacent to the binding area, and the method comprises the following steps: Step S1, shielding a cleaning window from a sensitive area, and arranging a shielding component on the periphery of a binding area of a TP Sensor to form the cleaning window, wherein the shielding component is used for limiting a cleaning medium to enter a polaroid area and/or an IC area; S2, establishing a local sealing cavity, attaching a sealing cleaning head to the cleaning window, and enabling the sealing cleaning head to form a local sealing cavity with the surface of the glass substrate, wherein the sealing cleaning head at least comprises a supply channel and a recovery channel, and the recovery channel is communicated with a negative pressure source; Step S3, dry removal, namely performing ion neutralization and negative pressure suction linkage removal in the local sealed cavity to remove loose particles and reduce electrostatic re-adsorption; Step S4, wet type micro-impact cleaning and synchronous recovery, performing micro-droplet impact spraying or micro-coating cleaning liquid on the binding area in the local sealing cavity, synchronizing with the negative pressure suction to recover liquid and dirt-carrying airflow, and then performing blow-drying or vacuum drying; S5, activating at low temperature, and performing low-temperature plasma treatment or UV ozone treatment on the binding region to improve the surface energy; And S6, judging whether an online closed loop is released from a time window, acquiring at least two types of online indexes of a binding area, and calculating a pollution index PI, wherein the online indexes at least comprise particle counting indexes and contact angles or surface energy indexes, comparing the pollution index PI with a threshold value, releasing the ACF attachment and hot-press binding when the pollution index PI meets the threshold value, limiting a maximum allowable delay time T from the end of the step S5 to the start of the hot-press binding, and returning to the step S3 and/or the step S4 for reprocessing if the threshold value is not met or exceeds the time T. Preferably, the shielding assembly comprises a disposable shielding tape and a reusable shielding frame, and the distance between the opening boundary of the shielding frame and the outer edge of the binding area is 0.1mm to 2.0mm. Preferably, the sealing cleaning head comprises an elastic sealing ring and a hard supporting ring, wherein the shore hardness of the elastic sealing ring is 20-70A, so that stable sealing is realized without damaging the TP Sensor surface. Preferably, the negative pressure of the negative pressure suction in the dry removal is in a range of 5kPa to 60kPa, and the ion neutralization is performed in synchronization with the suction for a period of 2s to 30s. Preferably, the wet micro-impact cleaning adopts micro-droplet impact with droplet diameter of 10-200 microns and jet speed of 5-80 m/s, and jet angle of 10-80 degrees, and negative pressure recovery is carried out at the same time of jet. Preferably, the cleaning solution comprises a mixed solution of deionized water and an alcohol solvent, wherein the alcohol solvent comprises isopropanol and/or ethanol, and the volume fraction of the alcohol solvent is 10-90%. Preferably, the wet micro-impact cleaning is followed by a directional wiping step, the wiping material is dust-free cloth or dust-free cotton swab, the wiping times are 1 to 5 times, and the wiping direction is one-way wiping or cross wiping along t