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CN-122007381-A - Preparation method of high-purity indium target

CN122007381ACN 122007381 ACN122007381 ACN 122007381ACN-122007381-A

Abstract

The invention relates to the technical field of indium target preparation, in particular to a preparation method of a high-purity indium target, which comprises the following steps of 1, weighing an indium raw material, placing the indium raw material in a die cavity, heating the indium raw material to melt the indium raw material, 2, carrying out ultrasonic treatment after the indium raw material is in a molten state, scraping impurities and oxide layers on the surface of indium metal liquid, 3, stopping heating, demolding to obtain an indium target plate blank, 4, rolling the plate blank, 5, leveling the rolled plate blank by using a pressing block, and carrying out rough machining, 6, bonding the rough machined plate blank with a copper backboard, and carrying out finish machining to obtain a qualified high-purity indium target.

Inventors

  • MAO SINING
  • CHEN XIAOXIAO
  • CHEN LONGLONG
  • CHEN LINGPENG

Assignees

  • 亚芯半导体材料(江苏)有限公司

Dates

Publication Date
20260512
Application Date
20260318

Claims (10)

  1. 1. The preparation method of the high-purity indium target material is characterized by comprising the following steps of: Step 1, weighing an indium raw material, placing the indium raw material in a mold cavity, and heating to melt the indium raw material; step 2, after the raw material indium is in a molten state, carrying out ultrasonic treatment for 5-15min, and then scraping impurities and oxide layers on the surface of the indium metal liquid by using a scraper; Step 3, stopping heating, cooling the die to 50-70 ℃, and demolding to obtain an indium target plate blank; Step 4, rolling the slab so that the final deformation of the slab is 60% -70%; step 5, leveling the rolled plate blank by using a pressing block, shearing the redundant part of the plate blank by using a plate shearing machine, marking, and rough machining one surface of the leveled plate blank; and step 6, bonding the rough machined plate blank with a copper backboard, and carrying out finish machining after bonding to obtain the qualified high-purity indium target.
  2. 2. The method for preparing a high purity indium target according to claim 1, wherein in step 2, an ultrasonic vibration head is used to perform cross vibration on indium metal liquid during ultrasonic treatment.
  3. 3. The method for preparing a high purity indium target according to claim 1, wherein in step 4, the cross rolling is performed during the rolling process, the number of times of rolling is 2-8, and after each time of rolling is completed, the next rolling is performed by rotating 90 ° and the rolling direction is in a cross shape.
  4. 4. The method for preparing a high purity indium target according to claim 1, wherein in step 5, the leveled slab is subjected to C-Scan flaw detection.
  5. 5. The method for preparing a high purity indium target according to claim 1, wherein in the step 5, the rough machining is performed according to the drawing, and the allowance of 0.5% -3% is reserved in the length, width and thickness of the slab.
  6. 6. The method for preparing a high purity indium target according to claim 1, wherein in step 5, the excess portion after cutting is sampled and analyzed to detect and analyze the grain size and purity.
  7. 7. The method for preparing a high purity indium target according to claim 1, wherein in the step 6, the bonding rate is detected by C-Scan flaw detection on the bonded target, and the bonding rate is required to be 97% or more.
  8. 8. The method for preparing a high purity indium target according to claim 1, wherein in step 6, after finishing, the product is inspected, and the geometric dimension, roughness and chamfer of the product are inspected.
  9. 9. The method of producing a high purity indium target according to any one of claims 1 to 8, wherein prior to operation, the mold surface, the planar heating table surface, and the squeegee are attached with a high temperature resistant teflon tape.
  10. 10. The method for preparing a high purity indium target according to claim 9, wherein in step 3, before stopping heating, checking whether the material in the mold cavity is sufficient, if not, feeding again, ultrasonic treatment, and scraping impurities and oxide layers on the surface of the indium metal liquid.

Description

Preparation method of high-purity indium target Technical Field The invention relates to the technical field of indium targets, in particular to a preparation method of a high-purity indium target. Background Indium metal has excellent ductility, high plasticity and low vapor pressure, and can be alloyed with various metals at random, so that the indium metal can be widely applied to various advanced fields, such as aviation fields, semiconductor fields, photoelectronic fields, industrial fields and the like. In the preparation process of the indium target, the prior art scheme is to prepare the target through the steps of melting an indium ingot on a heating platform, carrying out ultrasonic vibration, shaping by a die and the like, the method cannot well control the grain size of the target, has certain limitation on the compactness of the target, cannot achieve large deformation, and can only prepare products with simple forms. Therefore, we propose a method for preparing a high purity indium target to solve the above problems. Disclosure of Invention The invention aims to solve the defects in the prior art, and provides a preparation method of a high-purity indium target. The preparation method of the high-purity indium target material comprises the following steps: Step 1, weighing an indium raw material, placing the indium raw material in a mold cavity, and heating to melt the indium raw material; step 2, after the raw material indium is in a molten state, carrying out ultrasonic treatment for 5-15min, and then scraping impurities and oxide layers on the surface of the indium metal liquid by using a scraper; Step 3, stopping heating, cooling the die to 50-70 ℃, and demolding to obtain an indium target plate blank; Step 4, rolling the slab so that the final deformation of the slab is 60% -70%; step 5, leveling the rolled plate blank by using a pressing block, shearing the redundant part of the plate blank by using a plate shearing machine, marking, and rough machining one surface of the leveled plate blank; and step 6, bonding the rough machined plate blank with a copper backboard, and carrying out finish machining after bonding to obtain the qualified high-purity indium target. In the step2, an ultrasonic vibration head is used for carrying out cross vibration on the indium metal liquid during ultrasonic treatment. Preferably, in the step 4, the cross rolling is performed in the rolling process, the rolling times are 2-8 times, and after each rolling is completed, the rolling is performed for the next rolling by rotating 90 degrees, and the rolling direction is cross. Preferably, in the step 5, the leveled slab is subjected to C-Scan flaw detection, and C-Scan is based on the reflection or transmission principle of ultrasonic waves, and the core is that the mechanical scanning system drives the probe to move on the surface of the detected workpiece according to a preset path (such as a grid shape), and simultaneously records the characteristics of ultrasonic signals. Preferably, in the step 5, in the rough machining process, machining is performed according to the drawing, and the allowance of 0.5% -3% is reserved on the length, width and thickness of the slab. Preferably, in the step 5, the excess portion after shearing is sampled and analyzed, and 2 to 3 samples are taken from each place, and the grain size and purity are detected and analyzed. Preferably, in the step 6, the bonding rate is detected by performing C-Scan flaw detection scanning on the bonded target, and the bonding rate is required to be 97% or more. Preferably, in the step 6, after finishing, the product is inspected, and the geometric dimension, roughness and chamfer of the product are inspected. Preferably, prior to operation, the mold surface, the planar heating table surface and the doctor blade are attached with a high temperature resistant teflon tape. Preferably, in step 3, before stopping heating, checking whether the materials in the mold cavity are enough, and if not, feeding, ultrasonic treatment and scraping impurities and oxide layers on the surface of the indium metal liquid are performed again. The method has the beneficial effects that the problems of uneven grain size and texture distribution of the high-purity indium target are solved, the indium target prepared by the method has higher purity and density, small grain size (average grain size is less than or equal to 60 mu m) and more uniform texture distribution, and can form specific crystal orientation, and the indium target has better sputtering performance and higher utilization rate. Drawings FIG. 1 is a photograph showing the metallographic structure of a high purity indium sample in example 1. Detailed Description The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present