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CN-122008022-A - Grinding wheel for thinning wafer, preparation method, wafer thinning equipment and thinning method

CN122008022ACN 122008022 ACN122008022 ACN 122008022ACN-122008022-A

Abstract

The application relates to the technical field of integrated circuit manufacturing, and provides a grinding wheel for wafer thinning, a preparation method, wafer thinning equipment and a thinning method. The grinding wheel for thinning the wafer comprises a base material and a plurality of grinding blocks, wherein the grinding blocks comprise spiral calcium carbonate containing Si-O-Ca structures and are used for dispersing stress during grinding, the crystal form of the spiral calcium carbonate is vaterite type, the spiral calcium carbonate comprises a plurality of flaky crystals which are spirally distributed around the center and are partially overlapped, so that the spiral calcium carbonate has chiral characteristics, the stress during grinding can be dispersed by the plurality of flaky crystals, and the spiral calcium carbonate containing the Si-O-Ca structures is formed by inducing calcium ions through amino silanization aspartic acid. Through the technical scheme, the problem that the flatness of the thinned wafer is poor in the related art is solved.

Inventors

  • ZHANG LIFEI
  • LU XINCHUN
  • XING YI
  • ZHAO DEWEN

Assignees

  • 清华大学

Dates

Publication Date
20260512
Application Date
20251028

Claims (10)

  1. 1. The grinding wheel for thinning the wafer is characterized by comprising a base material and a plurality of grinding blocks, wherein the grinding blocks comprise spiral calcium carbonate containing Si-O-Ca structures and are used for dispersing stress during grinding; the crystal form of the spiral calcium carbonate containing the Si-O-Ca structure is vaterite type; The spiral calcium carbonate containing the Si-O-Ca structure comprises a plurality of flaky crystals, wherein the flaky crystals are spirally arranged around the center and adjacent flaky crystals are partially laminated, so that the spiral calcium carbonate has chiral characteristics, and the flaky crystals can disperse stress during grinding; The spiral calcium carbonate containing the Si-O-Ca structure is formed by inducing calcium ions through amino silanization aspartic acid.
  2. 2. The grinding wheel for thinning a wafer according to claim 1, wherein the average particle diameter of the spiral calcium carbonate having a Si-O-Ca structure is 1 to 100 μm.
  3. 3. The grinding wheel for thinning wafers according to claim 1, wherein the amino silanized aspartic acid is aspartic acid-beta-methyl ester hydrochloride and an amino silane coupling agent are prepared through condensation reaction.
  4. 4. The grinding wheel for thinning a wafer according to claim 1, wherein the molar ratio of the amino silanized aspartic acid to the calcium ions is 0.8-1.5:1.
  5. 5. The grinding wheel for thinning a wafer according to claim 3, wherein the mass-to-volume ratio of the aspartic acid-beta-methyl ester hydrochloride to the aminosilane coupling agent is 1-1.2 g/1.8 mL.
  6. 6. The grinding wheel for thinning the wafer according to claim 1, wherein the raw materials of the grinding block comprise, by weight, 45 parts of grinding materials, 34-46 parts of resins, 4-12 parts of spiral calcium carbonate containing Si-O-Ca structures and 2-10 parts of pore formers.
  7. 7. The grinding wheel for thinning a wafer according to claim 6, wherein the average particle diameter of the abrasive is 10 to 100 μm.
  8. 8. The method for manufacturing a grinding wheel for thinning a wafer according to any one of claims 1 to 7, comprising the steps of: B100, performing primary ball milling on an abrasive, a pore-forming agent and spiral calcium carbonate containing Si-O-Ca structures, adding resin, and performing secondary ball milling to obtain a mixture; b200, hot-press molding and curing the mixture to obtain a grinding block; B300, the grinding block is arranged on the surface of the base material, and the grinding wheel is obtained.
  9. 9. A wafer thinning apparatus comprising a grinding device having a grinding wheel for thinning a wafer according to any one of claims 1 to 7 at a lower portion thereof.
  10. 10. A wafer thinning method, characterized in that a wafer thinning process is performed using the wafer thinning apparatus according to claim 9.

Description

Grinding wheel for thinning wafer, preparation method, wafer thinning equipment and thinning method The application is a divisional application of an application patent application with the application number 202511543482X, which is filed on the day of 2025, 10 and 28. Technical Field The application relates to the technical field of integrated circuit manufacturing, in particular to a grinding wheel for wafer thinning, a preparation method, wafer thinning equipment and a thinning method. Background Three-dimensional integrated circuits (3D ICs) are an important technological path for the semiconductor industry to continue moore's law, improving chip performance and integration. The core idea is to stack a plurality of chips or functional layers in a vertical direction, and realize interlayer electrical connection Through-Silicon Via (TSV) and other interconnection technologies, so as to realize higher functional density in a limited space. Wafer thinning is a critical support process in 3D IC fabrication, the main purpose of which is to thin the wafer from the original thickness to an ultra-thin state suitable for vertical integration. Ultra-thin wafers are the physical basis for achieving 3D stacking and are critical to optimizing electrical performance and thermal management. As the number of stacked layers of 3D ICs increases, the demand for thickness reduction of individual wafers is becoming increasingly stringent. Meanwhile, 3D IC technology places extremely high demands on the surface quality of thinned wafers, including excellent total thickness bias (Total Thickness Variation, TTV) and extremely low surface roughness (Roughness Average, ra), to ensure accuracy, uniformity and stability of subsequent bonding processes. To achieve the above-mentioned thinning objective, the wafer thinning apparatus generally processes an ultrathin wafer by using a physical grinding action of a grinding wheel. The equipment has to precisely design and control the grinding structure and the grinding process, and can meet the processing requirements (such as thickness is less than or equal to 10 mu m, TTV is less than or equal to 1.5 mu m and Ra is less than or equal to 5 nm) of ultrathin wafers, and simultaneously, the manufacturing cost and the production efficiency are both considered. The basic composition of the grinding wheel is abrasive, binding agent and filler. The traditional grinding wheel filler such as feldspar, quartz sand and the like has the remarkable defects of (1) high brittleness, (2) remarkable stress concentration effect and (3) insufficient interfacial binding force with a binding agent. In the dynamic grinding process, the grinding wheel is extremely easy to generate microcrack expansion and subsurface damage layers due to the defects of the filler, and the damage can reduce the mechanical property of the grinding wheel, so that the flatness and long-term reliability of the thinned wafer are indirectly affected. Particularly, when an ultrathin wafer is processed, the problem of interface failure of a filler matrix not only directly pollutes the surface of the wafer, but also causes irregular abrasion of a grinding surface of a grinding wheel, so that the service life of the grinding wheel is greatly shortened, stable grinding force control and processing precision are difficult to maintain, and finally, the wafer flatness index exceeds the allowable process range. Disclosure of Invention The application provides a grinding wheel for thinning a wafer, a preparation method, wafer thinning equipment and a thinning method, which are used for solving or relieving at least one of the problems. The technical scheme of the application is as follows: The application provides wafer thinning equipment, which comprises a grinding device and an adsorption platform, wherein the adsorption platform is used for supporting a wafer and driving the wafer to rotate; The grinding device is arranged above the adsorption platform in a lifting manner, a grinding wheel for grinding the wafer is arranged at the lower part of the grinding device, the grinding wheel comprises a base material and a plurality of grinding blocks, the grinding blocks are fixed on the base material through adhesive layers, and the grinding blocks comprise spiral calcium carbonate containing Si-O-Ca structures and are used for dispersing stress during grinding. As a further technical scheme, the crystal form of the spiral calcium carbonate containing the Si-O-Ca structure is vaterite type. As a further technical scheme, the average particle size of the spiral calcium carbonate containing the Si-O-Ca structure is 1-100 mu m. As a further technical scheme, the spiral calcium carbonate containing the Si-O-Ca structure comprises a plurality of flaky crystals, wherein the flaky crystals are spirally arranged around the center and adjacent flaky crystals are partially stacked, so that the spiral calcium carbonate containing the Si-O-Ca structure has c