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CN-122008060-A - Method, system, top electrode, equipment and medium for processing curved surface of semiconductor component

CN122008060ACN 122008060 ACN122008060 ACN 122008060ACN-122008060-A

Abstract

The present disclosure relates to a method of processing a curved surface of a semiconductor component, a system of processing a curved surface of a semiconductor component, a top electrode, a computing device, and a computer-readable storage medium. In one aspect, a method for processing a curved surface of a semiconductor component is provided, which includes rotating the semiconductor component at a first rotational speed and rotating an abrasive tool at a second rotational speed, controlling the abrasive tool to abrade the curved surface of the semiconductor component along a predetermined path, acquiring positional information of the abrasive tool relative to the semiconductor component during the abrading, performing at least one of determining an effective workpiece diameter of the semiconductor component at a contact point corresponding to the positional information and dynamically adjusting the first rotational speed based on a change thereof, and determining an effective abrasive diameter of the abrasive tool at the contact point and dynamically adjusting the second rotational speed based on a change thereof, based on the positional information. This can improve the surface quality of the curved surface of the semiconductor component after processing.

Inventors

  • YANG QINGMIN
  • ZHANG GUANGYU

Assignees

  • 重庆欣晖材料技术有限公司

Dates

Publication Date
20260512
Application Date
20260318

Claims (14)

  1. 1. A method for processing a curved surface of a semiconductor component is characterized by comprising the following steps: rotating the semiconductor component at a first rotational speed and rotating the polishing tool at a second rotational speed; controlling the grinding tool to grind the curved surface of the semiconductor component along a preset path; Acquiring positional information of the polishing tool relative to the semiconductor component during the polishing, and According to the position information, at least one of the following is performed to maintain the kinetic parameters of the grinding zone at preset target values: determining an effective workpiece diameter of the semiconductor component at a contact point corresponding to the positional information and dynamically adjusting the first rotational speed based on a change in the effective workpiece diameter, and An effective grinding diameter of the grinding tool at the contact point is determined and the second rotational speed is dynamically adjusted based on a change in the effective grinding diameter.
  2. 2. The method of claim 1, wherein the kinetic parameter comprises a ratio of a linear velocity of the abrasive tool at the contact point to a linear velocity of the semiconductor component at the contact point.
  3. 3. The method of processing a curved surface of a semiconductor component according to claim 2, wherein the ratio is maintained at the target value by dynamically adjusting the first rotation speed based on a change in the effective workpiece diameter.
  4. 4. The method of processing a curved surface of a semiconductor component according to claim 2, wherein the ratio is maintained at the target value by dynamically adjusting the second rotational speed based on a change in the effective grinding diameter while dynamically adjusting the first rotational speed based on a change in the effective workpiece diameter.
  5. 5. The method of claim 1, wherein the kinetic parameter comprises a linear velocity of the abrasive tool at the contact point, the linear velocity of the abrasive tool being maintained at the target value by dynamically adjusting the second rotational speed based on a change in the effective abrasive diameter.
  6. 6. The method according to claim 1, wherein the dynamic adjustment includes performing adjustment by referring to a pre-generated lookup table or by a real-time operation of a controller, wherein the lookup table or the real-time operation maps positional information of the polishing tool on a predetermined path to a corresponding target rotational speed command.
  7. 7. The method of claim 1, wherein the semiconductor component is a top electrode for plasma treatment having a central axisymmetric curved surface, and the grinding is performed from an edge region to a central region of the electrode.
  8. 8. The method for processing a curved surface of a semiconductor component according to claim 1, wherein the grinding tool is a grinding wheel having a curved grinding surface, and the effective grinding diameter is a diameter of a circle of a rotation locus of the grinding wheel at the contact point.
  9. 9. A method for processing a curved surface of a semiconductor component is characterized by comprising the following steps: rotating the semiconductor component at a first rotational speed and rotating the polishing tool at a second rotational speed; controlling the grinding tool to grind the curved surface of the semiconductor component along a preset path; Acquiring position information of the grinding tool relative to the semiconductor component in the grinding process; determining an effective grinding diameter of the grinding tool at a contact point corresponding to the positional information based on the positional information, and The second rotational speed is dynamically adjusted based on the change in the effective grinding diameter to maintain the linear velocity of the grinding tool at the contact point at a preset target value.
  10. 10. A system for processing a curved surface of a semiconductor component, comprising: A first driving unit configured to drive the semiconductor component to rotate; A second driving unit configured to drive the polishing tool to rotate; A feeding unit configured to change a relative position of the polishing tool and the semiconductor component, and A control unit in communication with the first drive unit, the second drive unit, and the feed unit, the control unit configured to perform the method of processing a curved surface of a semiconductor component according to any one of claims 1 to 9.
  11. 11. The system for processing a curved surface of a semiconductor component according to claim 10, wherein the grinding tool is a diamond grinding wheel or a cubic boron nitride grinding wheel, and the material of the semiconductor component is silicon, silicon carbide or boron carbide.
  12. 12. A top electrode for plasma processing, characterized in that the top electrode has a central axisymmetric curved surface processed by the processing method of a curved surface of a semiconductor component according to any one of claims 1 to 9.
  13. 13. A computing device comprising a processor and a memory, the processor configured to execute instructions stored in the memory to implement the method of processing a curved surface of a semiconductor component according to any one of claims 1 to 9.
  14. 14. A computer-readable storage medium storing at least one instruction for execution by a processor to implement a method of processing a curved surface of a semiconductor component according to any one of claims 1 to 9.

Description

Method, system, top electrode, equipment and medium for processing curved surface of semiconductor component Technical Field The present disclosure relates to the field of semiconductor manufacturing technology, and in particular, to a method of processing a curved surface of a semiconductor component, a system for processing a curved surface of a semiconductor component, a top electrode, a computing device, and a computer-readable storage medium. Background In the process of miniaturization of semiconductor devices, in order to solve the step coverage problem faced by planar electrodes and break through the electrical performance bottleneck, the electrode structure is gradually changed from the traditional planar form to the smooth and round curved form. Thus, surface finishing techniques for such semiconductor components (e.g., top electrodes for plasma processing employing a surface design) are a key element in the fabrication process. In the related art, precision grinding is generally performed on a curved surface of such a semiconductor component using a numerically controlled grinder. In the machining process, in order to ensure the machining efficiency and the simplicity of control logic, a numerical control grinder generally adopts a constant-rotation-speed machining mode. Specifically, the driving device controls the grinding tool (such as a grinding wheel) to rotate at a set constant rotation speed, simultaneously controls the semiconductor component to rotate at the set constant rotation speed, and controls the grinding tool to move from a starting position (such as an edge) to a final position (such as a center) along the curved surface profile of the semiconductor component according to a preset feeding speed, thereby completing the material removal of the curved surface. However, in actual production, it was found that, although the related art strictly controls the rotational speed stability, the surface quality of the curved surface of the processed semiconductor part is still difficult to satisfy the stringent requirements of the high-end device. For example, the machined curved surface tends to exhibit a noticeable chromatic aberration in appearance, and the surface is prone to leaving macroscopic striae. In addition, the problem of poor consistency of the contour dimension of the curved surface is also existed in the batch processing. This affects not only the quality of the appearance of the product but also the final electrical performance and reliability of the semiconductor device. Disclosure of Invention This section provides a general summary of the disclosure, and is not a comprehensive disclosure of its full scope or all of its features. According to an aspect of the present disclosure, a method for processing a curved surface of a semiconductor component is provided. The processing method includes rotating a semiconductor component at a first rotation speed and rotating an abrasive tool at a second rotation speed, controlling the abrasive tool to abrade a curved surface of the semiconductor component along a predetermined path, acquiring position information of the abrasive tool relative to the semiconductor component during the abrading, and performing at least one of determining an effective workpiece diameter of the semiconductor component at a contact point corresponding to the position information and dynamically adjusting the first rotation speed based on a change in the effective workpiece diameter, and determining an effective abrasive diameter of the abrasive tool at the contact point and dynamically adjusting the second rotation speed based on a change in the effective abrasive diameter, according to the position information, to maintain a kinetic parameter of an abrasive region at a preset target value. According to another aspect of the present disclosure, a method for processing a curved surface of a semiconductor component is also provided. The processing method comprises the steps of enabling a semiconductor component to rotate at a first rotating speed and enabling a grinding tool to rotate at a second rotating speed, controlling the grinding tool to grind a curved surface of the semiconductor component along a preset path, acquiring position information of the grinding tool relative to the semiconductor component in the grinding process, determining an effective grinding diameter of the grinding tool at a contact point corresponding to the position information according to the position information, and dynamically adjusting the second rotating speed based on the change of the effective grinding diameter so as to keep the linear velocity of the grinding tool at the contact point at a preset target value. According to still another aspect of the present disclosure, a system for processing a curved surface of a semiconductor component is also provided. The processing system comprises a first driving unit, a second driving unit, a feeding unit and a control unit. Th