CN-122008082-A - Method for maintaining grid

Abstract

The disclosure provides a maintenance method of a grid, and belongs to the technical field of semiconductor preparation processes. The maintenance method of the grid comprises the steps of immersing an ion source grid to be treated in a cleaning agent for soaking, carrying out sand blasting on the ion source grid after soaking, carrying out polishing on the ion source grid after sand blasting, and cleaning the ion source grid after polishing. The method can effectively remove attachments on the surface of the ion source grid, and prolong the service life of the ion source grid.

Inventors

• LI JUNGUANG
• LI LINJI
• XUE KANGKANG
• LI SHUAICHAO

Assignees

• 京东方华灿光电(苏州)有限公司

Dates

Publication Date

20260512

Application Date

20260122

Claims (10)

1. 1. A method of maintaining a grid, the method comprising: immersing an ion source grid to be treated into a cleaning agent for soaking treatment; Performing sand blasting treatment on the ion source grid after the soaking treatment; polishing the ion source grid after sand blasting; and cleaning the polished ion source grid.
2. 2. The maintenance method according to claim 1, wherein the blasting the ion source grid after the immersing treatment comprises: And placing the ion source grid into a sand blasting cabin, and respectively treating the front surface and the back surface of the ion source grid for 600 seconds to 900 seconds by adopting soft abrasive with hardness smaller than that of the ion source grid under the pressure of compressed air of 0.15 to 0.25 MPa.
3. 3. The maintenance method of claim 2, wherein the outlet of the spray gun in the sandblasting booth is spaced more than 10cm from the surface of the ion source grid.
4. 4. The maintenance method according to claim 2, wherein the soft abrasive is walnut sand or plastic sand.
5. 5. The maintenance method according to claim 1, wherein the polishing the ion source grid after the blasting treatment comprises: And placing the ion source grid into a fluidized bed, and performing fluidization polishing treatment on the ion source grid by adopting glass beads so that the surface of the ion source grid meets the target smoothness.
6. 6. The maintenance method according to claim 5, wherein the polishing of the ion source grid after the blasting further comprises: and polishing the ion source grid in an inert gas atmosphere.
7. 7. The maintenance method according to claim 6, wherein the polishing time is 5 minutes to 15 minutes when the ion source grid is subjected to the polishing treatment.
8. 8. The maintenance method according to claim 5, wherein the glass beads have a diameter of 50 μm to 150. Mu.m.
9. 9. The maintenance method according to any one of claims 1 to 8, wherein the cleaning agent is a weakly acidic complex cleaning agent having a pH value of 4.0 to 5.0.
10. 10. The maintenance method according to any one of claims 1 to 8, characterized in that the maintenance method further comprises: And drying the ion source grid mesh.

Description

Method for maintaining grid Technical Field The disclosure belongs to the technical field of semiconductor preparation processes, and particularly relates to a maintenance method of a grid. Background The ion source grid is a key component in an optical coating machine, and the performance of the ion source grid directly influences the energy of ion bombardment and the quality of coating. As the service time is accumulated, the surface of the grid mesh can deposit attachments, so that the energy of the ion beam is attenuated, and the performance is reduced. In the related art, in order to solve this problem, the mesh is often immersed in a specific chemical agent, and the contaminants on the surface of the mesh are dissolved or peeled off by chemical reaction, thereby restoring the function of the mesh. However, the cleaning mode of the chemical cleaning liquid has obvious limitations that for the intractable adhesion layer with complex components or chemical bonding, the penetration and decomposition capacity of the chemical reagent is limited, the cleaning is often incomplete, and the attachments on the surface of the grid mesh are difficult to thoroughly remove. Disclosure of Invention The embodiment of the disclosure provides a maintenance method for a grid, which can effectively remove attachments on the surface of the grid and prolong the service life of the grid. The technical scheme is as follows: The embodiment of the disclosure provides a maintenance method of a grid, which comprises the following steps: Immersing ion source grids to be treated in a cleaning agent for soaking treatment, carrying out sand blasting treatment on the ion source grids after soaking treatment, carrying out polishing treatment on the ion source grids after sand blasting treatment, and cleaning the ion source grids after polishing. In yet another implementation of the present disclosure, the performing sand blasting on the ion source grid after the soaking treatment includes: And placing the ion source grid into a sand blasting cabin, and respectively treating the front surface and the back surface of the ion source grid for 600 seconds to 900 seconds by adopting soft abrasive with hardness smaller than that of the ion source grid under the pressure of compressed air of 0.15 to 0.25 MPa. In yet another implementation of the present disclosure, the outlet of the spray gun within the sandblasting booth is spaced more than 10cm from the surface of the ion source grid. In yet another implementation of the present disclosure, the soft abrasive is walnut sand or plastic sand. In yet another implementation of the present disclosure, the polishing the ion source grid after the sandblasting includes: And placing the ion source grid into a fluidized bed, and performing fluidization polishing treatment on the ion source grid by adopting glass beads so that the surface of the ion source grid meets the target smoothness. In still another implementation of the present disclosure, the polishing the ion source grid after the sandblasting process further includes: and polishing the ion source grid in an inert gas atmosphere. In yet another implementation of the present disclosure, the polishing time is 5 minutes to 15 minutes when the ion source grid is subjected to a polishing process. In yet another implementation of the present disclosure, the glass beads have a diameter of 50 μm to 150 μm. In yet another implementation of the present disclosure, the cleaning agent is a weak acidic complex cleaning agent having a pH of 4.0-5.0. In yet another implementation of the present disclosure, the maintenance method further includes: And drying the ion source grid mesh. The technical scheme provided by the embodiment of the disclosure has the beneficial effects that: When the grid maintenance method provided by the embodiment of the disclosure is used for cleaning and maintaining the ion source grid, firstly, the ion source grid is soaked by adopting the cleaning agent, various attachments on the surface of the ion source grid can be effectively softened and swelled, the binding force between the attachments and the ion source grid is obviously reduced, and favorable conditions are created for subsequent physical stripping. Subsequently, the ion source grid after the soaking treatment is subjected to sand blasting. The step utilizes the impact kinetic energy of the abrasive, can strip the softened adhesive layer with high efficiency, and mechanically coarsen part of the intractable adhesive layer, thereby forming a uniform and controllable microcosmic rough surface on the surface of the grid mesh. The rough surface serves as a key intermediate state and provides a uniform and consistent initial surface for subsequent polishing procedures. Then, the sandblasted grid is polished. The procedure aims to eliminate microscopic unevenness and residual ultrathin pollution layers introduced by sand blasting, so as to recover the luster and high-grade fin