CN-122010044-A - Radio frequency switch, preparation method thereof and electronic equipment

CN122010044ACN 122010044 ACN122010044 ACN 122010044ACN-122010044-A

Abstract

The disclosure provides a radio frequency switch comprising a substrate base plate, a first reference electrode, a second reference electrode, a driving electrode, an interlayer insulating layer and a film bridge structure. A first gap is formed between the driving electrode and the first reference electrode, and a second gap is formed between the driving electrode and the second reference electrode. The first gap defines a first slot portion. The second gap defines a second slot portion. The interlayer insulating layer is arranged on one side of the driving electrode, which is away from the substrate, and the surface of the interlayer insulating layer, which is located in the limited range of orthographic projection of the driving electrode on the substrate, is a first surface. The film bridge structure is arranged on one side of the interlayer insulating layer, which is away from the substrate. The driving electrode is positioned in a space defined by the film bridge and the substrate. The first groove part and the second groove part are filled with filling structures, the maximum distance between the surface of the filling structure, which is away from the substrate, and the substrate is a first distance, the maximum distance between the first surface and the substrate is a second distance, and the difference between the second distance and the first distance is not more than 200nm.

Inventors

JIANG FENG
ZHOU CHAO
HE YURONG

Assignees

北京京东方技术开发有限公司
京东方科技集团股份有限公司

Dates

Publication Date: 20260512
Application Date: 20241112

Claims (10)

1. A radio frequency switch, comprising: A substrate base; a first reference electrode and a second reference electrode disposed on the substrate, and a driving electrode disposed between the first reference electrode and the second reference electrode, wherein a first gap is formed between the driving electrode and the first reference electrode, and a second gap is formed between the driving electrode and the second reference electrode; The surface of the interlayer insulating layer, which is positioned in the limited range of the orthographic projection of the driving electrode on the substrate, on one side of the substrate is a first surface; The device comprises a substrate, an interlayer insulating layer, a membrane bridge structure, a driving electrode, a first reference electrode, a second reference electrode, a first bridge, a second bridge and a second bridge, wherein the interlayer insulating layer is arranged on one side of the substrate, which is far away from the substrate, the membrane bridge structure comprises a bridge deck and a bridge arm connected with the bridge deck; The radio frequency switch further comprises a first groove part defined by the first gap and a second groove part defined by the second gap, filling structures are filled in the first groove part and the second groove part, the maximum distance from the surface of the filling structure, which faces away from the substrate, to the substrate is a first distance, the maximum distance from the first surface to the substrate is a second distance, and the difference between the second distance and the first distance is not more than 200nm.
2. The radio frequency switch of claim 1, wherein the first reference electrode, the second reference electrode and the driving electrode are arranged in the same layer, and the interlayer insulating layer is arranged on one side of the layer where the first reference electrode, the second reference electrode and the driving electrode are arranged, which is away from the substrate; The bridge arm is connected with the first reference electrode through a first via hole penetrating through the interlayer insulating layer.
3. The radio frequency switch according to claim 2, wherein the bridge deck comprises a main body part and a protruding part connected with the main body part, wherein one end of the main body part is connected with the bridge arm, the other end of the main body part is connected with the protruding part, and the protruding part is arranged on one side of the main body part close to the substrate; The radio frequency switch further comprises a contact structure which is arranged corresponding to the protruding portion, the contact structure is arranged on one side, away from the substrate, of the interlayer insulating layer and is connected with the second reference electrode through a second via hole penetrating through the interlayer insulating layer, orthographic projection of the contact structure on the substrate covers orthographic projection of the protruding portion on the substrate, and a third distance is reserved between the contact structure and the protruding portion in the thickness direction of the substrate.
4. The radio frequency switch according to claim 3, further comprising a connection electrode disposed on a side of the interlayer insulating layer facing away from the substrate, wherein the connection electrode is connected to the second reference electrode through a third via penetrating the interlayer insulating layer, and the connection electrode is disposed on a side of the contact structure facing away from the driving electrode.
5. The radio frequency switch of claim 1, wherein the bridge deck includes a first window extending through the bridge deck in a thickness direction thereof.
6. A method of making a radio frequency switch comprising: Providing a substrate base plate; Forming a first reference electrode, a second reference electrode and a driving electrode arranged between the first reference electrode and the second reference electrode on the substrate base plate, wherein a first gap is formed between the driving electrode and the first reference electrode, and a second gap is formed between the driving electrode and the second reference electrode; forming an interlayer insulating layer on one side of the layer where the driving electrode is located, which is away from the substrate, wherein the interlayer insulating layer at least covers the surface of one side of the driving electrode, which is away from the substrate; Forming a filling structure in the first groove portion and the second groove portion; the device comprises a substrate, an interlayer insulating layer, a driving electrode, a bridge structure, a first reference electrode, a second reference electrode, a first bridge arm, a second bridge arm, a first reference electrode, a second bridge arm, a first bridge arm, a second bridge arm, a first bridge arm and a second bridge arm, wherein the interlayer insulating layer is arranged on one side of the substrate, which is far away from the substrate, the first bridge arm is connected with the first reference electrode; The maximum distance from the surface of the filling structure, which is away from the substrate, to the substrate is a first distance, the maximum distance from the first surface to the substrate is a second distance, and the difference between the second distance and the first distance is not more than 200nm.
7. The method of manufacturing of claim 6, wherein the filling structure comprises at least two stacked layers of sub-fills, the step of forming the sub-fills comprising: And forming photoresist layers in the first groove part and the second groove part, and exposing, developing and etching to form a pattern comprising the sub filling part.
8. The preparation method of claim 7, wherein the mask used for forming the sub-filling part exposure comprises a first pattern part and a second pattern part, wherein the orthographic projection of the first pattern part on the substrate base plate covers the orthographic projection of the first groove part on the substrate base plate, and the orthographic projection of the second pattern part on the substrate base plate covers the orthographic projection of the second groove part on the substrate base plate; the ratio of the width of the first pattern part to the first groove part is 1.1-1.2, and the ratio of the width of the second pattern part to the second groove part is 1.1-1.2.
9. The method of manufacturing according to claim 6, wherein the step of forming a film bridge structure on a side of the interlayer insulating layer facing away from the substrate base plate comprises: Forming a pattern comprising the bridge arm on one side of the interlayer insulating layer, which is away from the substrate base plate, through a patterning process; Forming a sacrificial layer on one side of the bridge arm, which is away from the substrate, and forming a fourth via hole penetrating along the thickness direction of the sacrificial layer, wherein the orthographic projection of the fourth via hole on the substrate covers the orthographic projection of the bridge arm on the substrate; Forming a pattern comprising the bridge body on one side of the sacrificial layer away from the substrate base plate through a patterning process; and removing the sacrificial layer.
10. An electronic device comprising the radio frequency switch of any of claims 1-5.

Description

Radio frequency switch, preparation method thereof and electronic equipment Technical Field The disclosure belongs to the technical field of radio frequency, and particularly relates to a radio frequency switch, a preparation method thereof and electronic equipment. Background Compared with the traditional silicon-based MEMS radio frequency switch, the glass-based device has lower insertion loss and higher isolation. Although the glass wafer can still realize the planarization of the film by using the CMP in the silicon-based process, the cost brought by the glass wafer and the matched process is greatly increased, and the commercialization popularization of the glass-based MEMS radio frequency switch is limited. The manufacture of MEMS radio frequency switches using large-sized glass substrates (e.g., G2.5, G5.5, etc.) in semiconductor display technology is an important direction to reduce the cost of glass-based devices. However, there is currently no CMP process for large-sized glass substrates, and it is also difficult to realize a CMP process for amorphous wafers in the foreseeable future. Planarization by non-CMP processes is therefore a critical technique for fabricating MEMS radio frequency devices on large-sized glass substrates. Disclosure of Invention The present invention aims to solve at least one of the technical problems existing in the prior art, and provides a radio frequency switch, comprising: A substrate base; a first reference electrode and a second reference electrode disposed on the substrate, and a driving electrode disposed between the first reference electrode and the second reference electrode, wherein a first gap is formed between the driving electrode and the first reference electrode, and a second gap is formed between the driving electrode and the second reference electrode; The surface of the interlayer insulating layer, which is positioned in the limited range of the orthographic projection of the driving electrode on the substrate, on one side of the substrate is a first surface; The device comprises a substrate, an interlayer insulating layer, a membrane bridge structure, a driving electrode, a first reference electrode, a second reference electrode, a first bridge, a second bridge and a second bridge, wherein the interlayer insulating layer is arranged on one side of the substrate, which is far away from the substrate, the membrane bridge structure comprises a bridge deck and a bridge arm connected with the bridge deck; The radio frequency switch further comprises a first groove part defined by the first gap and a second groove part defined by the second gap, filling structures are filled in the first groove part and the second groove part, the maximum distance from the surface of the filling structure, which faces away from the substrate, to the substrate is a first distance, the maximum distance from the first surface to the substrate is a second distance, and the difference between the second distance and the first distance is not more than 200nm. In some embodiments, the first reference electrode, the second reference electrode and the driving electrode are arranged on the same layer, and the interlayer insulating layer is arranged on one side of the layer where the first reference electrode, the second reference electrode and the driving electrode are located, which is away from the substrate; The bridge arm is connected with the first reference electrode through a first via hole penetrating through the interlayer insulating layer. In some embodiments, the bridge deck comprises a main body part and a protruding part connected with the main body part, wherein one end of the main body part is connected with the bridge arm, the other end of the main body part is connected with the protruding part, and the protruding part is arranged on one side of the main body part, which is close to the substrate; The radio frequency switch further comprises a contact structure which is arranged corresponding to the protruding portion, the contact structure is arranged on one side, away from the substrate, of the interlayer insulating layer and is connected with the second reference electrode through a second via hole penetrating through the interlayer insulating layer, orthographic projection of the contact structure on the substrate covers orthographic projection of the protruding portion on the substrate, and a third distance is reserved between the contact structure and the protruding portion in the thickness direction of the substrate. In some embodiments, the radio frequency switch further comprises a connection electrode arranged on one side of the interlayer insulating layer, which is away from the substrate, the connection electrode is connected with the second reference electrode through a third via hole penetrating through the interlayer insulating layer, and the connection electrode is arranged on one side of the contact structure, which is away from the driving electrode.