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CN-122010419-A - Atomic gas chamber and preparation method thereof

CN122010419ACN 122010419 ACN122010419 ACN 122010419ACN-122010419-A

Abstract

The application relates to an atomic gas chamber and a preparation method thereof. The preparation method of the atomic air chamber comprises the steps of providing an atomic air chamber glass shell, filling rubidium steam in the atomic air chamber glass shell, filling mixed gas in the atomic air chamber glass shell, wherein the mixed gas comprises xenon-129, xenon-131, hydrogen and buffer gas, the partial pressure ratio of the xenon-129 to the xenon-131 is 1:4-1:9, conducting heat preservation treatment on the atomic air chamber glass shell, enabling the rubidium steam to react with the hydrogen to generate a rubidium hydride film layer, and enabling the rubidium hydride film layer to cover the inner wall of the atomic air chamber glass shell. The preparation method of the atomic gas chamber can prolong the atomic spin relaxation time of xenon-129 and xenon-131, balance the relaxation performance of the two isotopes, further improve the performance of the atomic gas chamber and meet the requirement of application scenes such as quantum inertia instrument on the atomic spin stability of the atomic gas chamber.

Inventors

  • WAN YEQING
  • SHI BINGCHUAN
  • Han Yanzhou
  • ZHANG GUOYI
  • ZHOU JINJING
  • LIU SHIKANG
  • XU YANG
  • SUO TING

Assignees

  • 杭州极弱磁场国家重大科技基础设施研究院

Dates

Publication Date
20260512
Application Date
20251210

Claims (10)

  1. 1. The preparation method of the atomic air chamber is characterized by comprising the following steps of: providing an atomic air chamber glass shell; Filling rubidium steam in the glass bulb of the atomic air chamber; Filling mixed gas in the atomic gas chamber glass bulb, wherein the mixed gas comprises xenon-129, xenon-131, hydrogen and buffer gas, and the partial pressure ratio of the xenon-129 to the xenon-131 is 1:4-1:9; And carrying out heat preservation treatment on the atomic gas chamber glass shell, wherein rubidium steam reacts with the hydrogen to generate a rubidium hydride film layer, and the rubidium hydride film layer covers the inner wall of the atomic gas chamber glass shell.
  2. 2. The method for preparing an atomic gas chamber according to claim 1, wherein, When the mixed gas is filled in the atomic gas chamber glass bulb, the aeration rate of the mixed gas is less than or equal to 5Torr/min; And/or the total pressure of the mixed gas is 200Torr-500Torr, and the partial pressure of the hydrogen in the mixed gas is 5% -10%.
  3. 3. The method for preparing an atomic gas chamber according to claim 1, wherein, The partial pressure ratio of the xenon-129 to the xenon-131 is 1:5; And/or the total pressure of the mixed gas is 300Torr, and the partial pressure of the hydrogen in the mixed gas is 15Torr.
  4. 4. The method for preparing an atomic gas chamber according to claim 1, wherein, The filling of the rubidium steam in the atomic gas chamber glass bulb comprises heating a rubidium source at a first preset temperature, wherein the rubidium source is diffused into the atomic gas chamber glass bulb in a steam mode, and the first preset temperature is 200-220 ℃; And/or carrying out heat preservation treatment on the atomic air chamber glass bulb, wherein the heat preservation treatment comprises the step of carrying out heat preservation treatment on the atomic air chamber glass bulb for a preset time at a second preset temperature, the second preset temperature is 80-100 ℃, and the preset time is 120-180 hours.
  5. 5. The method for preparing an atomic gas chamber according to claim 4, The first preset temperature is 210 ℃, and/or the second preset temperature is 100 ℃, and the preset time is 150h.
  6. 6. The method for preparing an atomic gas chamber according to claim 1, wherein, The dimensional deviation of the atomic air chamber glass bulb is smaller than or equal to +/-0.01 mm, the wall thickness deviation of the same section of the atomic air chamber glass bulb is smaller than or equal to 0.005mm, and the axis perpendicularity of the atomic air chamber glass bulb is smaller than or equal to 0.005mm.
  7. 7. The method of manufacturing an atomic gas chamber according to claim 1, wherein after providing the atomic gas chamber envelope, the method of manufacturing an atomic gas chamber further comprises: Placing the atomic air chamber glass bulb in an alkali solution for first ultrasonic cleaning, wherein the alkali solution is sodium hydroxide solution, the mass fraction of sodium hydroxide in the sodium hydroxide solution is 4% -8%, the temperature of the first ultrasonic cleaning is 60-70 ℃, and the ultrasonic time of the first ultrasonic cleaning is 20-30 min; Placing the atomic air chamber glass bulb in an acid solution for second ultrasonic cleaning, wherein the acid solution is nitric acid solution, the mass fraction of nitric acid in the nitric acid solution is 6% -10%, the temperature of the second ultrasonic cleaning is 45-55 ℃, and the ultrasonic time of the second ultrasonic cleaning is 15-20 min.
  8. 8. An atomic gas chamber, wherein the atomic gas chamber is prepared by the method for preparing an atomic gas chamber according to any one of claims 1 to 7.
  9. 9. An atomic gas cell, the atomic gas cell comprising: An atomic air chamber glass shell; rubidium steam and mixed gas are filled in the atomic gas chamber glass bulb, wherein the mixed gas comprises xenon-129, xenon-131, hydrogen and buffer gas, and the partial pressure ratio of the xenon-129 to the xenon-131 is 1:4-1:9; And the rubidium hydride film layer covers the inner wall of the glass bulb of the atomic air chamber.
  10. 10. An atomic gas chamber according to claim 9, wherein, The partial pressure ratio of the xenon-129 to the xenon-131 is 1:5, and/or the dimensional deviation of the atomic air chamber glass bulb is less than or equal to +/-0.01 mm, the wall thickness deviation of the same section of the atomic air chamber glass bulb is less than or equal to 0.005mm, and the axial perpendicularity of the atomic air chamber glass bulb is less than or equal to 0.005mm.

Description

Atomic gas chamber and preparation method thereof Technical Field The invention relates to the technical field of atomic air chambers, in particular to an atomic air chamber and a preparation method thereof. Background The atomic air chamber is a core component of the quantum inertia instrument, and the performance of the atomic air chamber directly determines the precision and stability of the instrument. In an atomic gas chamber, the spin relaxation time of an inert gas atom (e.g., xenon-129, xenon-131) is a critical parameter. In the related art, in order to alleviate relaxation phenomena caused by collision between atoms and the inner wall of the gas chamber, an anti-relaxation film such as rubidium hydride (RbH) is generally coated on the inner wall of the gas chamber. However, the related technology does not deeply optimize key factors influencing relaxation time such as inflation ratio in the air chamber, so that the performance improvement of the atomic air chamber is limited. Therefore, how to improve the key factors influencing the relaxation time, such as the inflation ratio, and the like, and further prolong the relaxation time becomes a technical problem to be solved urgently. Disclosure of Invention Based on this, it is necessary to provide an atomic gas chamber and a method for producing the same, aiming at the problem of how to improve the key factors influencing the relaxation time, such as the inflation ratio, and the like, and further extend the relaxation time. The preparation method of the atomic gas chamber comprises the steps of providing an atomic gas chamber glass shell, filling rubidium steam in the atomic gas chamber glass shell, filling mixed gas in the atomic gas chamber glass shell, wherein the mixed gas comprises xenon-129, xenon-131, hydrogen and buffer gas, the partial pressure ratio of the xenon-129 to the xenon-131 is 1:4-1:9, conducting heat preservation treatment on the atomic gas chamber glass shell, enabling the rubidium steam to react with the hydrogen to generate a rubidium hydride film layer, and enabling the rubidium hydride film layer to cover the inner wall of the atomic gas chamber glass shell. In one embodiment, when the mixed gas is filled in the glass bulb of the atomic gas chamber, the aeration rate of the mixed gas is less than or equal to 5Torr/min, and/or the total pressure of the mixed gas is 200Torr-500Torr, and the partial pressure of the hydrogen in the mixed gas is 5% -10%. Therefore, when the air charging speed is too high, the air flow of the mixed gas can be prevented from impacting the inner wall of the glass shell of the atomic air chamber, and the subsequent coating process is prevented from being influenced. In one embodiment, the partial pressure ratio of xenon-129 to xenon-131 is 1:5, and/or the total pressure of the mixed gas is 300Torr, and the partial pressure of the hydrogen in the mixed gas is 15Torr. The relaxation time can be further prolonged, and the comprehensive performance of the atomic gas chamber is improved. In one embodiment, the filling of the rubidium vapor in the atomic gas chamber glass bulb comprises heating a rubidium source at a first preset temperature, wherein the rubidium source is diffused into the atomic gas chamber glass bulb in a vapor mode, the first preset temperature is 200-220 ℃, diffusion control of the rubidium vapor can be achieved, and meanwhile comprehensive performance of the atomic gas chamber is guaranteed. And/or carrying out heat preservation treatment on the atomic air chamber glass bulb, wherein the heat preservation treatment comprises the step of carrying out heat preservation treatment on the atomic air chamber glass bulb for a preset time at a second preset temperature, the second preset temperature is 80-100 ℃, and the preset time is 120-180 hours. The first preset temperature is 200-220 ℃, so that diffusion control of rubidium steam can be realized, and the comprehensive performance of the atomic gas chamber is ensured. The second preset temperature is 80-100 ℃, and the preset time is 120-180 hours, so that the rubidium hydride film layer with moderate thickness and high uniformity can be obtained. In one embodiment, the first preset temperature is 210 ℃, and/or the second preset temperature is 100 ℃, and the preset time is 150h. In one embodiment, the dimensional deviation of the atomic air chamber glass bulb is smaller than or equal to +/-0.01 mm, the wall thickness deviation of the same section of the atomic air chamber glass bulb is smaller than or equal to 0.005mm, and the axis perpendicularity of the atomic air chamber glass bulb is smaller than or equal to 0.005mm. The optimization of the geometric symmetry of the glass shell of the atomic air chamber is realized, the problem that the uniformity of a subsequently deposited rubidium hydride film layer is poor due to the geometric deviation of the glass shell of the atomic air chamber can be solved, the collision relaxation loss of ato