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CN-122010426-A - Bi-Sn-In-Ga-Zn five-element low-temperature solder doped with aminated carbon quantum dots, and preparation method and application thereof

CN122010426ACN 122010426 ACN122010426 ACN 122010426ACN-122010426-A

Abstract

The invention discloses Bi-Sn-In-Ga-Zn five-element low-temperature brazing filler metal doped with aminated carbon quantum dots, and a preparation method and application thereof, belonging to the technical field of low-temperature connection of superconducting materials, wherein the Bi-Sn-In-Ga-Zn five-element low-temperature brazing filler metal comprises Bi-Sn-In-Ga-Zn matrix powder and aminated carbon quantum dots; the mass ratio of the aminated carbon quantum dots to the Bi-Sn-In-Ga-Zn matrix powder is 0.5:95-100. The preparation process comprises ball milling and drying the solder powder, and carrying out hydrolytic amination on the carbon quantum dots by using a silane coupling agent KH550, carrying out compound ball milling on the aminated carbon quantum dots and the solder powder, and drying. The brazing filler metal prepared by the method is suitable for low-temperature connection of Nb-Ti alloy and fused quartz glass, and the problem that a substrate is damaged at high temperature in traditional brazing is solved by enhancing the interface superconducting performance through carbon quantum dots.

Inventors

  • LI YULONG
  • HAO RUIJIE
  • WU HAOYUE
  • LI YUE
  • DING FENG
  • LIN WEI
  • LEI MIN
  • LI XUEWEN

Assignees

  • 南昌大学

Dates

Publication Date
20260512
Application Date
20260202

Claims (10)

  1. 1. The Bi-Sn-In-Ga-Zn five-element low-temperature solder doped with the aminated carbon quantum dots is characterized In that the raw materials comprise Bi-Sn-In-Ga-Zn matrix powder and the aminated carbon quantum dots; The mass ratio of the aminated carbon quantum dots to the Bi-Sn-In-Ga-Zn matrix powder is 0.5:95-100.
  2. 2. The Bi-Sn-In-Ga-Zn pentad low-temperature solder doped with aminated carbon quantum dots according to claim 1, wherein the mass ratio of the aminated carbon quantum dots to the Bi-Sn-In-Ga-Zn matrix powder is 0.5:95.
  3. 3. The Bi-Sn-In-Ga-Zn pentad low temperature solder doped with aminated carbon quantum dots according to claim 1, wherein the Bi-Sn-In-Ga-Zn matrix powder comprises the following components In mass percent: 20% of Bi, 30% of Sn, 15% of In, 15% of Ga and 20% of Zn.
  4. 4. The Bi-Sn-In-Ga-Zn pentad low temperature solder doped with an aminated carbon quantum dot according to claim 1, wherein the preparation process of the aminated carbon quantum dot is as follows: dispersing the carbon quantum dots in absolute ethyl alcohol to obtain carbon quantum dot ethanol solution, adding a silane coupling agent and deionized water into the carbon quantum dot ethanol solution to carry out amination treatment, and centrifuging and vacuum freeze-drying to obtain aminated carbon quantum dot powder.
  5. 5. The Bi-Sn-In-Ga-Zn pentad low temperature solder doped with aminated carbon quantum dots according to claim 4, wherein the mass ratio of the carbon quantum dot ethanol solution, the silane coupling agent and the deionized water is 85-90:10:2; The silane coupling agent is KH550.
  6. 6. The Bi-Sn-In-Ga-Zn pentad low temperature filler metal doped with aminated carbon quantum dots according to claim 4, wherein the amination treatment is performed at a rotation speed of 300rpm for 1 hour at room temperature.
  7. 7. A Bi-Sn-In-Ga-Zn pentad low temperature solder doped with aminated carbon quantum dots according to claim 4, wherein the centrifugation conditions are centrifugation at 8000rpm for 15min, and/or, The vacuum freeze drying condition is that the vacuum degree is less than or equal to 5Pa, the pre-freezing is carried out for 2 hours at the temperature of-50 ℃, the temperature is increased to-10 ℃ at 5 ℃ per hour, the vacuum freeze drying condition is kept for 4 hours at the temperature of-10 ℃ per hour, and the vacuum freeze drying condition is kept for 2 hours at the temperature of 10 ℃ per hour to 25 ℃.
  8. 8. A method for preparing the Bi-Sn-In-Ga-Zn pentad low-temperature solder doped with aminated carbon quantum dots according to any one of claims 1 to 7, comprising the steps of: mixing the aminated carbon quantum dot ethanol solution with Bi-Sn-In-Ga-Zn matrix powder, and sequentially performing ball milling and vacuum drying to obtain the Bi-Sn-In-Ga-Zn five-membered low-temperature solder.
  9. 9. The method for preparing Bi-Sn-In-Ga-Zn pentad low-temperature solder doped with aminated carbon quantum dots according to claim 8, wherein the ball milling condition is ball milling ratio of 5:1, rotation speed of 200rpm, standing for 30min every ball milling of 1h for 4 times, and/or, The vacuum drying condition is that the vacuum degree is less than or equal to 10 -3 Pa and the vacuum degree is 50 ℃ for 2 hours.
  10. 10. Use of Bi-Sn-In-Ga-Zn pentad low temperature solder doped with aminated carbon quantum dots according to any one of claims 1-7 In Nb-Ti alloy and quartz glass welding.

Description

Bi-Sn-In-Ga-Zn five-element low-temperature solder doped with aminated carbon quantum dots, and preparation method and application thereof Technical Field The invention belongs to the technical field of low-temperature connection of superconducting materials, and particularly relates to Bi-Sn-In-Ga-Zn five-element low-temperature solder doped with aminated carbon quantum dots, and a preparation method and application thereof. Background In the tip fields of particle detectors, superconducting magnets, controllable nuclear fusion devices and the like, the low-temperature reliable connection of Nb-Ti superconducting alloy and fused silica glass is a core bottleneck which restricts the performance of the system. Such connections need to maintain superconducting stability at liquid helium temperatures, however, the prior art faces two major challenges: firstly, the prior solder causes double degradation of the connection strength and the superconducting performance Although the existing low-temperature brazing filler metal system (such as Bi-In-Zn alloy In the patent with publication number CN 104018026A) meets the requirement of melting point (178 ℃), in the brazing process, ti element reacts with oxygen In quartz to generate micron-sized Ti-O brittle phase, so that interface cracks are expanded along the brittle phase, and the joint strength is lower. The same brittleness causes electron transport barriers, resulting in a significant decrease in critical current density. Secondly, deep sinking functionalization and dispersion dilemma of carbon material enhancement scheme In the patent with publication number CN114414333A, graphene is embedded into solder by mechanical ball mixing, and the unfunctionalized carbon surface cannot form chemical bonding with SiO 2. The agglomerated graphene sheets distort the local electric field, resulting in a surge in interface resistance. CN120664535A bombards and activates the surface of the carbon tube by argon plasma, although the interface strength is improved, the single kilogram treatment cost is higher, and the application range is limited due to the dependence on ultra-high vacuum equipment. Therefore, there is a need to provide a low-temperature solder which can simultaneously achieve the aim of intrinsically improving the interface superconducting performance on the basis of ensuring that the Nb-Ti alloy/fused quartz forms a high-strength and durable joint under the low-temperature condition. Disclosure of Invention Aiming at the problems of low strength of low-temperature braze joints, poor interface superconducting performance, uneven dispersion of carbon materials, high functionalization cost and the like In the prior art, the invention provides a Bi-Sn-In-Ga-Zn five-element low-temperature brazing filler metal doped with aminated carbon quantum dots, and a preparation method and application thereof. The invention realizes the chemical bonding of the brazing filler metal and the fused quartz glass by introducing the aminated carbon quantum dots, inhibits the generation of brittle phases, and remarkably improves the mechanical property of the joint and the electron transmission capability of an interface. In order to achieve the above purpose, the present invention provides the following technical solutions: The Bi-Sn-In-Ga-Zn five-element low-temperature brazing filler metal doped with the aminated carbon quantum dots comprises Bi-Sn-In-Ga-Zn matrix powder and the aminated carbon quantum dots; The mass ratio of the aminated carbon quantum dots to the Bi-Sn-In-Ga-Zn matrix powder is 0.5:95-100. Optionally, the mass ratio of the aminated carbon quantum dots to the Bi-Sn-In-Ga-Zn matrix powder is 0.5:95. Optionally, the Bi-Sn-In-Ga-Zn matrix powder comprises the following components In percentage by mass: 20% of Bi, 30% of Sn, 15% of In, 15% of Ga and 20% of Zn. Further, the preparation process of the Bi-Sn-In-Ga-Zn matrix powder comprises the following steps: And weighing Bi, sn, in, ga, zn metal powder according to the mass percentage, immersing the metal powder into absolute ethyl alcohol, and then performing ball milling and drying to obtain the Bi-Sn-In-Ga-Zn matrix powder. Further, the ball milling process is carried out under the conditions that the ball milling temperature is less than or equal to 30 ℃, the ball material ratio is 12:1, the rotating speed is 300rpm, the ball milling is carried out for 1h, the ball milling process is carried out for 30min, and 8 times of circulation are repeated. Optionally, the preparation process of the aminated carbon quantum dot comprises the following steps: dispersing the carbon quantum dots in absolute ethyl alcohol to obtain carbon quantum dot ethanol solution, adding a silane coupling agent and deionized water into the carbon quantum dot ethanol solution to carry out amination treatment, and centrifuging and vacuum freeze-drying to obtain aminated carbon quantum dot powder. Further, the mass ratio of the carbon quantum