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CN-122010546-A - NiCuZn microwave ferrite material with high spin wave linewidth and preparation method thereof

CN122010546ACN 122010546 ACN122010546 ACN 122010546ACN-122010546-A

Abstract

The invention discloses a NiCuZn microwave ferrite material with high spin wave linewidth and a preparation method thereof, which relate to the technical field of electronic information materials and microwave electronics and comprise a NiCuZn microwave ferrite material which realizes high performance through a multi-ion synergistic effect method, wherein In3+ ions and Ga3+ ions which can reduce ferromagnetic resonance linewidth are added to replace Zn2+ ions on spinel A site, meanwhile fast relaxation ions Ho3+ ions are added to replace Ni2+ ions on spinel B site, and then Mn2+ ions are used to replace trivalent Fe3+ ions, so that elements In ferrite and the balance of electricity valence are regulated, and the NiCuZn microwave ferrite material with Gao Zixuan wave linewidth is obtained.

Inventors

  • SHAO HAIGEN
  • LI RONG
  • HU YONG
  • XING XIUBIN
  • CHENG YUHUA

Assignees

  • 安徽海泰科电子科技有限公司

Dates

Publication Date
20260512
Application Date
20260116

Claims (10)

  1. 1. A NiCuZn microwave ferrite material with high spin wave linewidth comprises a ferrite material taking Ni0.43-xHoxCu0.11Zn0.46-y-zGayInzFe-x-y-zMnx +y+zO4 as a formula, and is characterized in that the microwave ferrite material is based on spinel ferrite, the chemical formula of the microwave ferrite material is Ni0.43-xHoxCu0.11Zn0.46-y-zGayInzFe2-x-y-zMnx +y+zO4, x=0.01-0.08, y=0.01-0.10, z=0.01-0.10, and x, y and z are molar stoichiometric ratios.
  2. 2. The NiCuZn microwave ferrite material with high spin wave linewidth according to claim 1, wherein the crystal structure presents a spinel structure, and is prepared from raw materials of NiO, ho2O3, cuO, znO, ga O3, in2O3, fe2O3 and MnO by a solid phase sintering method, wherein the sintering temperature is In a range of 1050deg.C-1250 deg.C.
  3. 3. The NiCuZn microwave ferrite material with high spin-wave linewidth according to claim 1, wherein the material has excellent microwave gyromagnetic characteristics, namely, saturation magnetization of 4 pi Ms is 3900 Gs-4500 Gs, ferromagnetic resonance linewidth DeltaH is 60 Oe-90 Oe, spin-wave linewidth DeltaHk is 15-28 Oe, microwave dielectric constant epsilon is 15-18, and microwave dielectric loss tangent tan delta epsilon is 3-8 multiplied by 10 < -3 >.
  4. 4. The method for preparing the NiCuZn microwave ferrite material with the high spin wave linewidth according to claim 1, wherein the method for preparing the NiCuZn microwave ferrite material with the high spin wave linewidth by adopting the solid phase sintering method comprises the following steps: Step 1, taking NiO, ho2O3, cuO, znO, ga2O3, in2O3, fe2O3 and MnO as reactant raw materials, and weighing reactants according to the stoichiometric ratio of Ni0.43-xHoxCu0.11Zn0.46-y-zGayInzFe-x-y-zMnx +y+zO4, x=0.01-0.08, y=0.01-0.10 and z=0.01-0.10 to obtain a raw material mixed system; Step 2, putting the raw material mixed system weighed in the step1 into a planetary ball mill for wet ball milling, taking zirconia balls and deionized water as milling media, performing primary ball milling for 12-24 hours at a rotating speed of 200-280 r/min, and obtaining raw material mixed slurry for primary ball milling after finishing; Step 3, placing the raw material mixed slurry obtained in the step 2 into a blast drying oven for drying, wherein the drying temperature is 60 oC-100 oC, grinding the dried mixed material, and sieving the ground mixed material with a 40-mesh sample sieve to obtain dried first mixed powder; step 4, presintering the first mixed powder obtained in the step 3 in a high-temperature muffle furnace of 850 oC-1000 oC, and preserving heat for 3-8 hours to enable the first mixed powder to perform presintering reaction to obtain presintering powder; Step 5, performing secondary ball milling on the presintered powder obtained in the step 4, taking zirconia balls and deionized water as milling media, wherein the ball milling time is 12-18 hours, the rotating speed is 200-280 r/min, and obtaining mixed slurry of the secondary ball milling after finishing; step 6, drying and crushing the secondary ball milling mixed slurry obtained in the step 5 in a baking oven of 60 oC-100 oC, adding 8-15 wt% of PVA (polyvinyl alcohol) adhesive for granulating, and sieving with a 80-mesh sample sieve for treatment to obtain granulated uniform mixed particles; Step 7, drying the mixed particles obtained in the step 6 in a 60 oC-100 oC blast drying box for 3-5 minutes, and pressing into wafer blanks under the vertical pressure of a hydraulic press; And 8, placing the green blank obtained in the step 7 into a high-temperature muffle furnace, and sintering for 4-8 hours at the temperature of 1050deg.C-1250 deg.C to obtain the NiCuZn microwave ferrite material with high spin wave linewidth.
  5. 5. The NiCuZn microwave ferrite material with high spin-wave linewidth according to claim 4, wherein in the steps 2 and 5, the diameter of the zirconia balls is 2-5 mm.
  6. 6. The NiCuZn microwave ferrite material with the high spin-wave linewidth according to claim 1, wherein in the step 4, the temperature rising rate of a muffle furnace is controlled to be 2-5 ℃ per minute in the presintering process.
  7. 7. The NiCuZn microwave ferrite material with high spin wave linewidth according to claim 1, wherein in the step 6, the weight concentration of the granulating agent PVA solution is 10%, and the sample classifying sieve is a nylon sample classifying sieve.
  8. 8. The NiCuZn microwave ferrite material with high spin-wave linewidth according to claim 1, wherein in step 7, the hydraulic press pressure is controlled to be 8-20 MPa, and the dwell time is set to be 30-60 seconds.
  9. 9. The NiCuZn microwave ferrite material with high spin-wave linewidth according to claim 1, wherein in the step 7, the thickness of the wafer is 1 mm-2.5 mm.
  10. 10. The NiCuZn microwave ferrite material with the high spin wave linewidth according to claim 1, wherein in the step 8, in the final sintering process, the temperature rising rate of a muffle furnace is controlled to be 2-5 ℃ per minute, and a specific sintering curve is that the furnace temperature is firstly raised to 450-600 ℃, after the temperature is reached, the material is kept for 2-5 hours for glue discharging, and after the glue discharging is completed, the material is continuously heated to the required sintering temperature according to the set temperature rising rate.

Description

NiCuZn microwave ferrite material with high spin wave linewidth and preparation method thereof Technical Field The invention relates to the technical field of electronic information materials and microwave electronics, in particular to a NiCuZn microwave ferrite material with high spin wave linewidth and a preparation method thereof. Background The spin wave ferrite material is a ferrite material with gyromagnetic effect, and is characterized in that the polarization plane of electromagnetic waves is rotated under a high-frequency magnetic field, and the spin wave ferrite material is widely applied to high-frequency microwave electronic devices and is mainly based on the propagation and regulation capacity of spin waves. The spin-wave ferrite device is mainly applied to manufacturing a microwave circulator and an isolator, unidirectional transmission of electromagnetic waves is achieved through nonreciprocal phase displacement of the spin-wave ferrite device, devices such as an oscillator in a microwave communication system are protected from being affected by emission, the spin-wave ferrite can be used for constructing a static magnetic wave delay line, a filter and a signal-to-noise ratio enhancer in the field of information processing, accurate control of signal delay time of the delay line, narrow-band frequency controllable selection of the filter and amplitude limiting function of the signal-to-noise ratio enhancer are achieved, and the spin-wave ferrite is applied to an ultra-fast logic device of high-frequency spin electronics, and spin-wave interference regulation and control functions are achieved based on spin wave characteristics of materials. However, the existing NiCuZn microwave ferrite material with high spin wave linewidth has the following problems in the use process that the microwave ferrite material (such as YIG, niZn, liZn series material) which is already applied to the market at present has different advantages, but generally faces a key technical problem that the spin wave linewidth delta Hk of the ferrite material is higher to improve the capacity of the microwave device for bearing high peak power, but the spin wave linewidth is lower when the ferromagnetic resonance linewidth of the material is reduced and the dielectric constant of the material is improved, so that the application of the microwave ferrite device under the high peak power condition is limited. According to the theory of magnetic physics, the spin wave line width of ferrite is mainly influenced by the refinement degree of crystal grains, the rapid relaxation property of ions and the porosity of the material. Disclosure of Invention The invention aims to provide a NiCuZn microwave ferrite material with high spin wave linewidth and a preparation method thereof, so as to solve the related problems in the prior art. In order to solve the technical problems, the invention provides a NiCuZn microwave ferrite material with high spin wave linewidth, which comprises Gao Zixuan waves, wherein the microwave ferrite material adopts spinel ferrite as a base, and the chemical formula is expressed as follows: Ni0.43-xHoxCu0.11Zn0.46-y-zGayInzFe2-x-y-zMnx +y+zO4, x=0.01-0.08, y=0.01-0.10, z=0.01-0.10, and the x, y and z values are molar stoichiometric ratios. Furthermore, the crystal structure of the NiCuZn microwave ferrite material with Gao Zixuan wave line width presents a spinel structure, and is synthesized by raw materials of NiO, ho2O3, cuO, znO, ga2O3, in2O3, fe2O3 and MnO through a solid phase sintering method, wherein the sintering temperature is In a range of 1050deg.C-1250 deg.C. Further, the saturation magnetization 4 pi Ms of the NiCuZn microwave ferrite material with Gao Zixuan wave width is 3900 Gs-4500 Gs, the ferromagnetic resonance line width delta H is 60 Oe-90 Oe, the spin wave line width delta Hk is 15-28 Oe, the microwave dielectric constant epsilon is 15-18, and the microwave dielectric loss tangent tan delta epsilon is 3-8 multiplied by 10 < -3 >. Further, the preparation process of the microwave ferrite material with high magnetic permeability and low ferromagnetic resonance line width comprises the following steps: step 1, taking NiO, ho2O3, cuO, znO, ga2O3, in2O3, fe2O3 and MnO as reactant raw materials, and weighing reactants according to the stoichiometric ratio of Ni0.43-xHoxCu0.11Zn0.46-y-zGayInzFe2-x-y-zMnx +y+zO4, x=0.01-0.08, y=0.01-0.10 and z=0.01-0.10 to obtain a raw material mixed system; Step 2, putting the raw material mixed system weighed in the step1 into a planetary ball mill for wet ball milling, taking zirconia balls and deionized water as milling media, performing primary ball milling for 12-24 hours at a rotating speed of 200-280 r/min, and obtaining raw material mixed slurry for primary ball milling after finishing; Step 3, placing the raw material mixed slurry obtained in the step 2 into a blast drying oven for drying, wherein the drying temperature is 60 oC-100 oC, grinding the dr