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CN-122011948-A - Pressureless sintering silver colloid, preparation method thereof and semiconductor device

CN122011948ACN 122011948 ACN122011948 ACN 122011948ACN-122011948-A

Abstract

The invention discloses pressureless sintering silver paste, a preparation method of the silver paste and a semiconductor device, which comprise, by mass, 80-90 parts of silver powder, 0.1-15 parts of an epoxy resin composition, 0.1-7 parts of a diluent, 0.1-5 parts of a curing agent, 0.01-1 part of a curing accelerator, 0.1-7 parts of a solvent and 0.1-5 parts of a coupling agent, wherein the silver powder comprises large-thickness flake powder, submicron spherical powder and nanometer silver powder, and the epoxy resin composition comprises at least one of epoxy resin, high-temperature resistant resin or toughening resin. According to the invention, the high-thickness piece powder, the submicron ball powder and the nanometer silver powder are compounded, so that the pin has low viscosity under the condition of high silver content to improve the dispensing operation property, the epoxy resin combination is adopted, the high temperature resistance and the flexibility of the conductive adhesive are balanced through the toughening type modified epoxy resin or the high temperature resistant resin, and the conductive adhesive has low CTE, low modulus and high TST reliability while being resistant to high temperature.

Inventors

  • HUANG JIANMIN
  • WU WEIZHEN
  • YANG FAN
  • JIANG LIANG
  • HU BO

Assignees

  • 深圳芯源新材料有限公司

Dates

Publication Date
20260512
Application Date
20260203

Claims (11)

  1. 1. A pressureless sintering silver colloid is used for packaging semiconductor devices, and is characterized by comprising the following components in parts by mass: 80-90 parts of silver powder; 0.1-15 parts of epoxy resin composition; 0.1-7 parts of a diluent; 0.1-5 parts of curing agent; 0.01-1 part of curing accelerator; 0.1-7 parts of solvent; 0.1-5 parts of coupling agent; The silver powder comprises large-thickness powder, submicron spherical powder and nanometer silver powder, and the epoxy resin composition comprises at least one of epoxy resin, high-temperature resistant resin or toughening resin.
  2. 2. The pressureless sintered silver colloid according to claim 1, which is characterized by comprising the following components in parts by mass: 82-86 parts of silver powder; 3-7 parts of the epoxy resin composition; 1-3 parts of a diluent; 3-4.5 parts of the curing agent; 0.1-0.3 part of curing accelerator; 3-5 parts of a solvent; 2-4 parts of coupling agent.
  3. 3. The pressureless sintered silver colloid according to claim 1, wherein the mass ratio of the large-thickness flake powder, the submicron spherical powder and the nanometer silver powder in the silver powder is (40-70): (20-30): (0.5-2.0), the tap density of the large-thickness flake powder is 4.5-7.0 g/cm 3 , and the particle size is 3-10 μm.
  4. 4. The pressureless sintering silver colloid according to claim 1, wherein the epoxy resin composition comprises the epoxy resin, the high temperature resistant resin and the toughening resin, wherein the toughening resin is polyether modified epoxy resin and long chain hydrocarbon modified epoxy resin, and the mass ratio of the epoxy resin to the polyether modified epoxy resin to the long chain hydrocarbon modified epoxy resin to the high temperature resistant resin is (0.5-1.5): 1-2: (0.5-1.5).
  5. 5. The pressureless sintered silver paste of claim 1, wherein the epoxy resin is one or more of bisphenol a epoxy resin, bisphenol F epoxy resin, hydrogenated bisphenol a epoxy resin, or ultra-low chlorine bisphenol F epoxy resin.
  6. 6. The pressureless sintered silver paste of claim 1, wherein the high temperature resistant resin is one or more of a trifunctional epoxy, a tetrafunctional epoxy, an orthocresol formaldehyde epoxy, a bisphenol a type novolac epoxy, a phenol formaldehyde type epoxy, a trifunctional novolac epoxy, and a tetrafunctional novolac epoxy.
  7. 7. The pressureless sintered silver paste of claim 1, wherein the toughening resin is a modified epoxy resin comprising one or more combinations of polyether modified epoxy resin, long chain hydrocarbon modified epoxy resin, dimer acid modified epoxy resin, and isocyanate modified epoxy resin.
  8. 8. The pressureless sintered silver paste of claim 1, wherein the curing agent is a phenolic resin type curing agent comprising one or more combinations of novolac, BPA, o-resol and cresol formaldehyde type phenolic resins.
  9. 9. The pressureless sintered silver paste of claim 1, wherein the solvent is a high boiling point organic solvent comprising one or more combinations of DBE, butyl carbitol acetate, butyl carbitol, alcohol ester dodecanol, cetyl alcohol ester, dimethyl phthalate, ethylene glycol phenyl ether, propylene glycol phenyl ether, dipropylene glycol methyl ether, tripropylene glycol methyl ether, and diphenyl ether.
  10. 10. The preparation method of the pressureless sintering silver colloid is characterized by comprising the following steps: Weighing the epoxy resin composition, the diluent, the curing agent and the solvent according to the mass parts of the silver colloid according to any one of claims 1-9, heating and stirring at 50-90 ℃, uniformly mixing, stopping heating after cooling to room temperature, adding the curing accelerator and the coupling agent, and continuing stirring for 30min to obtain the organic carrier; Mixing and stirring the organic carrier and silver powder, and then rolling and defoaming to obtain the silver colloid.
  11. 11. A semiconductor device, characterized in that the pressureless sintered silver colloid according to claim 1 to 9 or the pressureless sintered silver colloid obtained by the preparation method according to claim 10 is used for packaging.

Description

Pressureless sintering silver colloid, preparation method thereof and semiconductor device Technical Field The invention belongs to the technical field of semiconductor packaging, and particularly relates to pressureless sintering silver colloid, a preparation method thereof and a semiconductor device. Background With the continuous development of semiconductor chip packaging technology, the application field of bonding bare silicon chips (without metal plating layers) on metal substrates is increasing, and most of the bonding is uniform in large area. Silicon has a large difference in coefficient of thermal expansion (CTE ≡2.6X10 -6/° C) from a metal substrate (such as copper CTE ≡16.5X10 -6/° C), and a large-area bonding is added, so that a traditional sintering type silver paste bonding has large thermal mismatch and thermal stress, and finally interface failure is caused. At present, although the problems of thermal mismatch and thermal stress can be solved by bonding bare silicon chips with semi-sintered conductive silver adhesive of silver powder and resin system at metal interfaces, the conventional resin has poor heat resistance, the heat resistance and the heat conductivity of the conductive adhesive can be reduced by adding the resin, so that the electric conductivity and the heat conductivity of the adhesive are difficult to balance with the reliability of TST (thermal conductive adhesive), the reliability of short time and high temperature under high temperature condition is difficult to meet, in addition, the interface holes exist after sintering in large-area pressureless sintering. Disclosure of Invention In order to solve the technical problems, the embodiments of the present invention provide a pressureless sintered silver paste, which comprises the following components in parts by mass: 80-90 parts of silver powder; 0.1-15 parts of epoxy resin composition; 0.1-7 parts of a diluent; 0.1-5 parts of curing agent; 0.01-1 part of curing accelerator; 0.1-7 parts of solvent; 0.1-5 parts of coupling agent; The silver powder comprises large-thickness powder, submicron spherical powder and nanometer silver powder, and the epoxy resin composition comprises at least one of epoxy resin, high-temperature resistant resin or toughening resin. In some embodiments, the above components may specifically be 80 parts, 81 parts, 87 parts, 88 parts, 89 parts, 90 parts of silver powder, 0.1 part, 0.5 part, 1 part, 2 parts, 8 parts, 9 parts, 10 parts, 11 parts, 12 parts, 15 parts of epoxy resin composition, 0.1 part, 0.5 part, 4 parts, 5 parts, 6 parts, 7 parts of diluent, 0.5 part, 1 part, 2 parts, 5 parts of curing agent, 0.01 part, 0.05 part, 0.4 part, 0.5 part, 0.7 part, 0.8 part, 0.9 part, 1 part of curing accelerator, 0.1 part, 0.5 part, 1 part, 2 parts, 6 parts, 7 parts of solvent, 0.1 part, 0.5 part, 1 part, 1.5 part, 5 parts of coupling agent, and the above mass is not specifically limited. Further, the coating comprises the following components in parts by mass: 82-86 parts of silver powder; 3-7 parts of an epoxy resin composition; 1-3 parts of a diluent; 3-4.5 parts of a curing agent; 0.1-0.3 part of curing accelerator; 3-5 parts of solvent; 2-4 parts of coupling agent. In a preferred embodiment, the silver powder may be 82 parts, 83 parts, 84 parts, 86 parts, the epoxy resin composition may be 3 parts, 4 parts, 5 parts, 6 parts, 7 parts, the diluent may be 1 part, 1.5 parts, 2 parts, 2.5 parts, 3 parts, the curing agent may be 3 parts, 3.5 parts, 4 parts, 4.5 parts, the curing accelerator may be 0.1 part, 0.15 part, 0.2 part, 0.25 part, 0.3 part, the solvent may be 3 parts, 3.5 parts, 4 parts, 4.5 parts, 5 parts, the coupling agent may be 2 parts, 2.5 parts, 3 parts, 3.5 parts, 4 parts, and the mass parts are not particularly limited. Specifically, the mass ratio of the large-thickness powder to the submicron spherical powder to the nanometer silver powder in the silver powder is (40-70): (20-30): (0.5-2.0), and the mass ratio can be 40:20:0.5、40:30:0.5、40:30:2、40:30:0.5、50:20:0.5、50:30:0.5、50:30:2、50:30:0.5、70:20:0.5、70:30:0.5、70:30:2、70:30:0.5,, preferably (50-65): (22-25): (0.7-1.5), and the mass ratio can be 50:22:0.7, 50:25:0.7, 50:22:1.5, 50:25:1.5, 65:22:0.7, 65:25:0.7, 65:22:1.5 and 65:25:1.5. More preferably (55-60): (23-24): (0.9-1.2), specifically, the ratio may be 55:23:0.9, 55:24:0.9, 50:23:1.2, 50:24:1.2, 60:23:0.9, 60:24:0.9, 60:23:1.2, 60:24:1.2, and the ratio is not specifically limited. Further, in order to achieve as high silver content as possible and ensure sintering activity of the silver powder, the silver powder is a composite silver powder including a large-plate powder, a submicron spherical powder and a nano silver powder, wherein the tap density of the large-plate powder is 4.5-7.0 g/cm 3, the particle size D50 is 3-10 μm, in some embodiments, the tap density may be 4g/cm 3、5g/cm3、5.5g/cm3、6g/cm3、6.5g/cm3、7g/cm3, and the particle size D50 may be 3 μm, 4 μm, 5 μm, 6 μm, 7 μm,