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CN-122012038-A - High-heat-conductivity diamond composite material and preparation method thereof

CN122012038ACN 122012038 ACN122012038 ACN 122012038ACN-122012038-A

Abstract

The invention relates to the technical field of diamond composite materials, in particular to a high-heat-conductivity diamond composite material and a preparation method thereof. The diamond composite material comprises, by weight, 50 parts of diamond powder, 5-10 parts of graphene quantum dot solution, 10-30 parts of Cr/Cu-MOF and 10-20 parts of polyvinyl alcohol. According to the invention, the graphene quantum dots and Cr/Cu-MOF are introduced as the composite interface modifier, so that the interface structure and the bonding state of the diamond composite material are synergistically optimized, the thermal conductivity of the composite material is effectively improved, and the requirements of high-power electronic devices on heat dissipation materials are fully met.

Inventors

  • CAO XIAOJUN
  • HUANG DI

Assignees

  • 湖南良诚半导体研究院有限责任公司

Dates

Publication Date
20260512
Application Date
20251224

Claims (6)

  1. 1. The high-heat-conductivity diamond composite material is characterized by comprising, by weight, 50 parts of diamond powder, 5-10 parts of graphene quantum dot solution, 10-30 parts of Cr/Cu-MOF and 10-20 parts of polyvinyl alcohol.
  2. 2. The high thermal conductivity diamond composite material of claim 1, wherein the preparation method of the graphene quantum dots comprises the following steps: a1, using citric acid and urea as precursors, and dispersing the precursors in water to form a solution mixture; and A2, transferring the solution mixture into a reaction kettle with a polytetrafluoroethylene lining, heating at 170-200 ℃ for 5-8 hours, cooling to room temperature, centrifuging at 4000-6000 rpm to remove large particles, and removing unreacted small molecules by using a dialysis membrane of 2000-10000 Da to obtain the graphene quantum dot solution.
  3. 3. The diamond composite material with high thermal conductivity according to claim 2, wherein the amount ratio of citric acid, urea and water in the step A1 is 1 mol:1~2 mol:10L.
  4. 4. The diamond composite material with high heat conductivity according to claim 1, wherein the preparation method of the Cr/Cu-MOF comprises the following steps of B1, adding chromium chloride and copper chloride serving as mixed metal precursors, terephthalic acid and acetic acid into DMF, and uniformly stirring and dissolving to form precursors; And B2, transferring the precursor prepared in the step B1 into a reaction kettle with a polytetrafluoroethylene lining, heating for 22-26 hours at 100-140 ℃, cooling to room temperature, centrifuging, collecting precipitate, alternately washing the precipitate by ethanol and deionized water, and drying for 12-24 hours at 40-80 ℃ in a vacuum drying oven to obtain the Cr/Cu-MOF.
  5. 5. The diamond composite material with high thermal conductivity according to claim 4, wherein in the step B1, the molar ratio of chromium chloride to copper chloride is 1:1-2, the total molar ratio of terephthalic acid to mixed metal precursor is 1:1, the molar ratio of acetic acid to terephthalic acid is 10:1, and the dosage ratio of dmf to terephthalic acid is 20 ml:1 mmol.
  6. 6. A method for preparing a high thermal conductivity diamond composite material according to any one of claims 1 to 5, comprising the steps of: S1, weighing diamond powder, graphene quantum dot solution and Cr/Cu-MOF according to parts by weight, then carrying out ultrasonic stirring and mixing uniformly, adding polyvinyl alcohol and water to prepare 8-12% polyvinyl alcohol aqueous solution by mass fraction, granulating, and then carrying out compression molding; and S2, heating the blank formed by pressing the S1 to 550-700 ℃ in a nitrogen atmosphere, discharging glue for 1-2 hours, heating to 1100-1500 ℃ and sintering for 3-5 hours, and cooling to room temperature at a cooling rate of 2-4 ℃ per minute to obtain the diamond composite material.

Description

High-heat-conductivity diamond composite material and preparation method thereof Technical Field The invention relates to the technical field of diamond composite materials, in particular to a high-heat-conductivity diamond composite material and a preparation method thereof. Background With the rapid development of microelectronic integration technology, the chip feature size is continuously reduced and the three-dimensional heterogeneous integrated architecture is widely applied, so that the power density of the device is rapidly increased, the heat generation rate per unit volume is remarkably increased, and the unprecedented high requirement on the heat dissipation performance of the electronic packaging material is provided. The research shows that the service life of the semiconductor device is shortened by about 50% when the temperature of the semiconductor device is increased by 10 ℃, and the thermal stress caused by temperature fluctuation is a main cause of the thermal fatigue failure of the microcircuit, so that the development of an advanced thermal management material with ultrahigh heat conduction and controllable thermal expansion coefficient becomes a key support for continuing moore's law. Other traditional materials such as tungsten copper, molybdenum copper alloy, aluminum nitride ceramics and the like are difficult to realize ideal balance among ultrahigh heat conduction, controllable thermal expansion coefficient and good processing performance, and cannot meet the severe requirements of next-generation electronic packaging on heat dissipation efficiency and reliability. Diamond is an ideal reinforcing phase of high-heat-conductivity composite materials as a substance with the best known heat-conducting property in the natural world. However, it is difficult to directly use single diamond as a packaging material, and when the single diamond is compounded with high-heat-conductivity metal, the ultra-high heat conductivity of diamond and the excellent processing performance of the metal are expected to be synergistically exerted, and the ultra-high heat conductivity material with high heat conductivity and adjustable thermal expansion coefficient is realized. However, the practical application of the existing diamond composite material faces a core technical bottleneck that the combination property between diamond and doped metal substances is poor, no solid phase reaction exists between the diamond and the doped metal substances at high temperature, densification and sintering are difficult, and the thermal resistance between interfaces is high. Therefore, how to reduce interface thermal resistance to the maximum degree through innovative material design and preparation process has become a core subject for pushing the composite material to industrial application in microelectronic integration technology. Disclosure of Invention Aiming at the situation, the invention provides a diamond composite material with high heat conduction and a preparation method thereof in order to overcome the defects of the prior art. In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: The invention provides a high-heat-conductivity diamond composite material which comprises, by weight, 50 parts of diamond powder, 5-10 parts of graphene quantum dot solution, 10-30 parts of Cr/Cu-MOF and 10-20 parts of polyvinyl alcohol. Preferably, the preparation method of the graphene quantum dot solution comprises the following steps: a1, using citric acid and urea as precursors, and dispersing the precursors in water to form a solution mixture; and A2, transferring the solution mixture into a reaction kettle with a polytetrafluoroethylene lining, heating at 170-200 ℃ for 5-8 hours, cooling to room temperature, centrifuging at 4000-6000 rpm to remove large particles, and removing unreacted small molecules by using a dialysis membrane of 2000-10000 Da to obtain the graphene quantum dot solution. Preferably, the dosage ratio of citric acid, urea and water in the step A1 is 1 mol:1~2 mol:10L. Preferably, the preparation method of the Cr/Cu-MOF comprises the following steps of B1, adding chromium chloride and copper chloride serving as mixed metal precursors, terephthalic acid and acetic acid into DMF, and uniformly stirring and dissolving to form precursors; And B2, transferring the precursor prepared in the step A1 into a reaction kettle with a polytetrafluoroethylene lining, heating for 22-26 hours at 100-140 ℃, cooling to room temperature, centrifuging, collecting precipitate, alternately washing the precipitate with ethanol and deionized water for three times, and drying for 12-24 hours at 40-80 ℃ in a vacuum drying oven to obtain the Cr/Cu-MOF. Preferably, in the step B1, the molar ratio of chromium chloride to copper chloride is 1:1-2, the total molar ratio of terephthalic acid to the mixed metal precursor is 1:1, the molar ratio of acetic acid to terephthalic acid is 10:1,