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CN-122012073-A - Nanomaterial and preparation method thereof, photoelectric device and display device

CN122012073ACN 122012073 ACN122012073 ACN 122012073ACN-122012073-A

Abstract

The application discloses a nano material and a preparation method thereof, a photoelectric device and a display device, and relates to the technical field of display. The nano material comprises quantum dots and a complex, wherein the complex is formed by complexing procyanidine and metal ions. The nano material provided by the application has higher stability.

Inventors

  • HUANG PANNING

Assignees

  • 深圳市TCL高新技术开发有限公司

Dates

Publication Date
20260512
Application Date
20241111

Claims (12)

  1. 1. A nanomaterial characterized in that the nanomaterial comprises quantum dots and a complex formed by complexing procyanidins and metal ions.
  2. 2. The nanomaterial of claim 1, wherein the polymer material, Said complex being negatively charged, and/or The mass ratio of the procyanidine to the metal ion is (3-10): 1, and/or The polymerization degree of the procyanidine is 2-10, optionally the polymerization degree of the procyanidine is 2-5, and/or The procyanidine contains phenolic hydroxyl groups, the mass fraction of the phenolic hydroxyl groups in the procyanidine is 25% -35%, and/or The metal ions include silver ions, and/or The procyanidine contains a plurality of phenolic hydroxyl groups, and the complex is formed by complexing at least part of the phenolic hydroxyl groups and the metal ions of the procyanidine.
  3. 3. The nanomaterial of claim 1, wherein the polymer material, The nanomaterial being negatively charged, and/or In the nano material, the mass ratio of the quantum dots to the complex is (5-15): 1, and/or The nano material comprises a quantum dot, a complex, a nano material and a nano material, wherein the complex is connected with the quantum dot, optionally, the complex contains a plurality of phenolic hydroxyl groups, and the complex is connected with the quantum dot through at least part of phenolic hydroxyl groups in coordination.
  4. 4. The nanomaterial of claim 1, wherein the polymer material, The average particle diameter of the quantum dots is 5 nm-15 nm, and/or The quantum dot is selected from one or more of single-structure quantum dot, core-shell structure quantum dot and perovskite type quantum dot, wherein the material of the single-structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are respectively selected from II-VI group compounds, IV-VI group compounds, One or more of III-V compound and I-III-VI compound, wherein the shell layer of the quantum dot with the core-shell structure comprises one or more layers, the II-VI compound is selected from one or more of CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、ZnO、HgS、HgSe、HgTe、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe and HgZnSTe, the IV-VI compound is selected from one or more of SnS、SnSe、SnTe、PbS、PbSe、PbTe、SnSeS、SnSeTe、SnSTe、PbSeS、PbSeTe、PbSTe、SnPbS、SnPbSe、SnPbTe、SnPbSSe、SnPbSeTe、SnPbSTe, the III-V compound is selected from one or more of GaN、GaP、GaAs、GaSb、AlN、AlP、AlAs、AlSb、InN、InP、InAs、InSb、GaNP、GaNAs、GaNSb、GaPAs、GaPSb、AlNP、AlNAs、AlNSb、AlPAs、AlPSb、InNP、InNAs、InNSb、InPAs、InPSb、GaAlNP、GaAlNAs、GaAlNSb、GaAlPAs、GaAlPSb、GaInNP、GaInNAs、GaInNSb、GaInPAs、GaInPSb、InAlNP、InAlNAs、InAlNSb、InAlPAs and InAlPSb, the I-III-VI compound is selected from one or more of CuInS 2 、CuInSe 2 and AgInS 2 , the quantum dot with the core-shell structure is selected from one or more of CdSe/CdSeS/CdS、InP/ZnSeS/ZnS、CdZnSe/ZnSe/ZnS、CdSeS/ZnSeS/ZnS、CdSe/ZnS、CdSe/ZnSe/ZnS、ZnSe/ZnS、ZnSeTe/ZnS、CdSe/CdZnSeS/ZnS and InP/ZnSe/ZnS, the material of the perovskite type quantum dot is selected from doped or undoped inorganic perovskite type semiconductor, Or an organic-inorganic hybrid perovskite semiconductor, wherein the structural general formula of the inorganic perovskite semiconductor is AMX 3 , wherein A is Cs + ion, M is one or more of divalent metal cations selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ , X is halogen anions selected from one or more of Cl - 、Br - 、I - , the structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX 3 , B is organic amine cations selected from CH 3 (CH 2 ) n-2 NH 3 + or [ NH 3 (CH 2 ) n NH 3 ] 2+ ], wherein n is more than or equal to 2, M is one or more of divalent metal cations selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ , X is halogen anions selected from one or more of Cl - 、Br - 、I - .
  5. 5. The nanomaterial of claim 1, wherein the quantum dot further has a ligand attached thereto, wherein, The mass ratio of the quantum dots to the ligand is (10-20): 1, and/or The ligand comprises one or more of fatty amine ligand with 1-24 carbon atoms, fatty acid ligand with 1-24 carbon atoms, carboxylate ligand, phosphate ligand, halogen ion ligand, thiol ligand with 1-24 carbon atoms, tri-aliphatic phosphine with 9-30 carbon atoms, triarylphosphine with 18-30 carbon atoms, tri-aliphatic phosphine oxide with 9-30 carbon atoms and triarylphosphine oxide with 18-30 carbon atoms, wherein the fatty amine ligand with 1-24 carbon atoms comprises one or more of oleylamine, n-decylamine, octylamine, dioctylamine, trioctylamine, dodecylamine, myristylamine, palmitylamine and stearylamine; and/or the fatty acid ligand with 1-24 carbon atoms comprises one or more of oleic acid, n-capric acid, caprylic acid, dicaprylic acid, tricaprylic acid, dodecanoic acid, myristic acid, palmitic acid, stearic acid, thioglycolic acid and mercaptopropionic acid, and/or the carboxylate ligand is selected from one or more of magnesium carboxylate ligand, calcium carboxylate ligand, aluminum carboxylate ligand, zirconium carboxylate ligand, lithium carboxylate ligand, sodium carboxylate ligand and barium carboxylate ligand, and/or the phosphate ligand is selected from one or more of magnesium phosphate ligand, calcium phosphate ligand, aluminum phosphate ligand, zirconium phosphate ligand, lithium phosphate ligand, sodium phosphate ligand and barium phosphate ligand, and/or the halide ion ligand is selected from one or more of fluoride ion, chloride ion, bromide ion and iodide ion, and/or the thiol ligand with 1-24 carbon atoms is selected from one or more of 1, 2-ethanedithiol, propanethiol, butanete, octanethiol, dodecathiol, octadecanethiol, benzene thiol, 1, 2-benzene thiol, 1-3-benzene thiol, one or more of 1, 4-benzenethiol, and/or one or more of tripropyl phosphine, tributyl phosphine, tripentyl phosphine, trihexyl phosphine, triheptyl phosphine, trioctyl phosphine, trisnonyl phosphine and tridecyl phosphine, and/or one or more of triaryl phosphine with 18-30 carbon atoms, tri (m-toluene) phosphine, tri (2-toluene) phosphine and tri (p-methylphenyl) phosphine, and/or one or more of tripropyl phosphine, tributyl phosphine oxide, tripentyl phosphine, trihexyl phosphine, trioheptyl phosphine, trioctyl phosphine, trisnonyl phosphine and tridecyl phosphine, and/or one or more of tri (m-toluene) phosphine, tri (2-toluene) phosphine and tri (p-methylphenyl) phosphine.
  6. 6. The preparation method of the nano material is characterized by comprising the following steps: Providing a quantum dot dispersion liquid and a complex, wherein the quantum dot dispersion liquid comprises quantum dots and a first solvent, and the complex is formed by complexing procyanidine and metal ions; And mixing the complex with the quantum dot dispersion liquid to obtain the nano material.
  7. 7. The method according to claim 6, wherein the method for producing the complex comprises providing a procyanidin dispersion including procyanidin and a second solvent and a metal salt, and mixing the metal salt and the procyanidin dispersion to obtain the complex.
  8. 8. The method according to claim 7, wherein, The polymerization degree of the procyanidine is 2-10, further, the polymerization degree of the procyanidine is 2-5, and/or The procyanidine contains phenolic hydroxyl groups, the mass fraction of the phenolic hydroxyl groups in the procyanidine is 25% -35%, and/or In the procyanidine dispersion liquid, the mass concentration of procyanidine is 10 mg/mL-30 mg/mL, and/or The second solvent comprises a polar solvent, wherein the polar solvent comprises one or more of trimethoxy butanol, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, tetrahydrofuran, N-dimethylformamide, pyrrole, and butyric acid, and/or The metal salt comprises silver salt, which comprises one or more of silver chloride, silver nitrate, silver bromide, silver iodide, and silver cyanide, and/or The mass ratio of the procyanidine to the metal salt is (5-15): 1, and/or The mixing temperature of the metal salt and the procyanidine dispersion liquid is 60-80 ℃, and the mixing time is 1-3 h.
  9. 9. The method of preparing as recited in claim 6, wherein mixing the complex with the quantum dot dispersion comprises providing a complex dispersion comprising the complex and a third solvent, mixing the complex dispersion with the quantum dot dispersion, wherein, In the quantum dot dispersion liquid, the mass concentration of the quantum dots is 10 mg/mL-30 mg/mL, and/or In the complex dispersion liquid, the mass concentration of the complex is 5 mg/mL-20 mg/mL, and/or The first solvent comprises a nonpolar solvent including one or more of n-hexane, n-heptane, n-octane, isooctane, cyclohexane, benzene, toluene, xylene, ethylbenzene, carbon tetrachloride, chloroform, and dichloromethane, and/or The third solvent comprises polar solvent including trimethoxy butanol, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, tetrahydrofuran, N-dimethylformamide, pyrrole, butyric acid, and/or The mass ratio of the quantum dots to the complex is (5-15): 1, and/or The temperature of the mixture of the complex dispersion liquid and the quantum dot dispersion liquid is 80-90 ℃, the mixing time is 30-60 min, and/or The quantum dots are also connected with ligands, wherein the mass ratio of the quantum dots to the ligands is (10-20): 1, and/or the ligands comprise one or more of aliphatic amine ligands with 1-24 carbon atoms, fatty acid ligands with 1-24 carbon atoms, carboxylate ligands, phosphate ligands, halogen ion ligands, mercaptan ligands with 1-24 carbon atoms, tri-aliphatic phosphine with 9-30 carbon atoms, triarylphosphine with 18-30 carbon atoms, tri-aliphatic phosphine oxide with 9-30 carbon atoms and triarylphosphine oxide with 18-30 carbon atoms.
  10. 10. An optoelectronic device comprising an anode, a light-emitting layer and a cathode, which are sequentially stacked, wherein the material of the light-emitting layer comprises the nanomaterial according to any one of claims 1 to 5 or the nanomaterial produced by the production method according to any one of claims 6 to 9.
  11. 11. The optoelectronic device of claim 10, wherein, The thickness of the light-emitting layer is 10 nm-40 nm, and/or The anode and the cathode each independently comprise one or more of a metal electrode, a carbon electrode, a metal oxide electrode and a composite electrode, wherein the material of the metal electrode comprises one or more of Al, ag, cu, mo, au, ba, ca, yb and Mg, the material of the carbon electrode comprises one or more of graphite, carbon nano-tube, graphene and carbon fiber, the material of the metal oxide electrode comprises one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, moO 3 and AMO, the composite electrode comprises one or more of AZO/Ag/AZO、AZO/Al/AZO、ITO/Ag/ITO、ITO/Al/ITO、ZnO/Ag/ZnO、ZnO/Al/ZnO、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO 2 /Ag/TiO 2 and TiO 2 /Al/TiO 2 , and/or The photoelectric device further comprises an electronic functional layer, the electronic functional layer is arranged between the light-emitting layer and the cathode, the material of the electronic functional layer comprises an N-type semiconductor material, the N-type semiconductor material comprises one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, the material of the first undoped metal oxide particles comprises one or more of ZnO and TiO 2 、SnO 2 、ZrO 2 、Ta 2 O 5 , the metal oxide in the first doped metal oxide particles comprises one or more of ZnO and TiO 2 、SnO 2 、ZrO 2 、Ta 2 O 5 、Al 2 O 3 , the doping element in the first doped metal oxide particles comprises one or more of Al, mg, li, mn, Y, la, cu, ni, zr, ce, in, ga, the IIB-VIA semiconductor material comprises one or more of ZnS, znSe, cdS, the IIIA-VA semiconductor material comprises one or more of InP and GaP, the metal oxide in the first doped metal oxide particles comprises one or more of ZnO and TiO 2 、SnO 2 、ZrO 2 、Ta 2 O 5 、Al 2 O 3 , the doping element in the first doped metal oxide particles comprises one or more of ZnS, znSe, cdS, and the doping element in the first doped metal oxide particles comprises one or more of CuS-CuS and CuS-0.0% > The photoelectric device further comprises a hole function layer, wherein the hole function layer is arranged between the anode and the light emitting layer, the material of the hole function layer comprises an organic P-type semiconductor material or an inorganic P-type semiconductor material, and the organic P-type semiconductor material comprises 4,4'-N, N' -dicarbazolyl-biphenyl, N '-diphenyl-N, N' -bis (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, N '-diphenyl-N, N' -bis (3-methylphenyl) - (1, 1 '-biphenyl) -4,4' -diamine, N '-bis (3-methylphenyl) -N, N' -bis (phenyl) -spiro, N, N ' -bis (4- (N, N ' -diphenyl-amino) phenyl) -N, N ' -diphenyl benzidine, 4' -tris (N-carbazolyl) -triphenylamine, 4' -tris (carbazol-9-yl) triphenylamine, trichloroisocyanuric acid, terbium doped phosphate based green luminescent materials, 2,3,6,7,10, 11-hexacyano-1, 4,5,8,9, 12-hexaazabenzophenanthrene, 4',4' -tris (N-3-methylphenyl-N-phenylamino) triphenylamine, poly [ (9, 9' -dioctylfluorene-2, 7-diyl) -co- (4, 4' - (N- (4-sec-butylphenyl) diphenylamine)) ], Poly (4-butylphenyl-diphenylamine), poly [ bis (4-phenyl) (4-butylphenyl) amine ], polyaniline, polypyrrole, poly (p-phenylenevinylene, poly (phenylenevinylene), poly [ 2-methoxy-5- (2-ethylhexyloxy) -1, 4-phenylenevinylene ], poly [ 2-methoxy-5- (3 ',7' -dimethyloctyloxy) -1, 4-phenylenevinylene ], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4 '-bis (p-carbazolyl) -1,1' -biphenyl compounds, N, N, N ', N' -tetraarylbenzidine, PEDOT, PEDOT PSS and derivatives thereof, PEDOT PSS doped with s-MoO 3 derivatives, poly (N-vinylcarbazole) and derivatives thereof, polymethacrylate and derivatives thereof, poly (9, 9-octylfluorene) and derivatives thereof, poly (spirofluorene) and derivatives thereof, N '-di (naphthalen-1-yl) -N, N' -diphenyl benzidine, spiroNPB, nano polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, and inorganic P-type semiconductor material comprising second doped metal oxide particles, One or more of a second undoped metal oxide particle, a metal sulfide, a metal selenide, and a metal nitride, the metal oxide in the second doped metal oxide particle and the metal oxide in the second undoped metal oxide particle each independently comprising one or more of MoO 3 、WO 3 、NiO、CrO 3 、CuO、V 2 O 5 , the doping element in the second doped metal oxide particle comprising one or more of Mo, W, ni, cr, cu, V, the metal sulfide comprising CuS, One or more of MoS 3 、WS 3 , the metal selenide comprising one or more of MoSe 3 、WSe 3 , the metal nitride comprising P-type gallium nitride, wherein the doping amount of the doping element in the second doping type metal oxide particles is 0.1wt% to 15wt%.
  12. 12. A display device comprising an electro-optical device according to any one of claims 10 to 11.

Description

Nanomaterial and preparation method thereof, photoelectric device and display device Technical Field The application relates to the technical field of display, in particular to a nano material, a preparation method thereof, a photoelectric device and a display device. Background Quantum dots are nano-scale semiconductors that emit light of a specific frequency by applying a certain electric field or light pressure to the nano-semiconductor material, and the frequency of the emitted light varies with the size of the semiconductor, so that the color of the emitted light can be controlled by adjusting the size of the nano-semiconductor. Due to quantum confinement effect and quantum size effect of the quantum dot, the quantum dot has excellent performances of wide excitation spectrum, narrow half-peak width, adjustable wavelength, solution processing and the like, and is widely applied to the fields of photoelectricity, biological medicine and the like. In the related art, the stability of the quantum dots is poor, and further improvement is needed. Disclosure of Invention In view of the above, the present application provides a nanomaterial and a preparation method thereof, an optoelectronic device, and a display device. The embodiment of the application is realized in such a way that the nanomaterial comprises quantum dots and a complex, wherein the complex is formed by complexing procyanidine and metal ions. Correspondingly, the embodiment of the application also provides a preparation method of the nano material, which comprises the following steps: Providing a quantum dot dispersion liquid and a complex, wherein the quantum dot dispersion liquid comprises quantum dots and a first solvent, and the complex is formed by complexing procyanidine and metal ions; And mixing the complex with the quantum dot dispersion liquid to obtain the nano material. Correspondingly, the embodiment of the application also provides a photoelectric device, which comprises an anode, a light-emitting layer and a cathode which are sequentially stacked, wherein the material of the light-emitting layer comprises the nano material or the nano material prepared by the preparation method. Correspondingly, the embodiment of the application also provides a display device which comprises the photoelectric device. The nano material provided by the application has higher stability. Drawings In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. FIG. 1 is a flow chart of a method for preparing a nanomaterial provided by an embodiment of the present application; Fig. 2 is a schematic structural diagram of an optoelectronic device according to an embodiment of the present application; Fig. 3 is a schematic structural diagram of another photoelectric device according to an embodiment of the present application. Reference numerals: an optoelectronic device 100, an anode 10, a light-emitting layer 20, a cathode 30, a hole-functional layer 40, and an electron-functional layer 50. Detailed Description The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present application. Furthermore, it should be understood that the detailed description is presented herein for purposes of illustration and description only, and is not intended to limit the application. In the present application, unless otherwise indicated, terms of orientation such as "upper" and "lower" are used to generally refer to the upper and lower directions of the device in actual use or operation, and specifically the directions of the drawings in the drawings, while "inner" and "outer" are used with respect to the outline of the device. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third and the like are used merely as labels, and do not impose numerical requirements or on the order of construction. In the present application, "and/or" describes an association relationship of an association object, which means that there may be three relationships, for example, A and/or B, and that there is A alone, while there is A and B, and there is B alone. Wherein A, B may be singular or plural. In the present application, "at least on