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CN-122012076-A - Quantum dot post-treatment method and application of composite photovoltaic synergistic film thereof

CN122012076ACN 122012076 ACN122012076 ACN 122012076ACN-122012076-A

Abstract

The invention discloses a quantum dot post-treatment method and application of a composite photovoltaic synergistic film thereof, and belongs to the technical field of composite optical films and photovoltaics. Preparing perovskite quantum dot solution, sequentially adding quantum dot protective layer precursor solution and ionic surfactant solution into the perovskite quantum dot solution, performing aftertreatment, adding polymer solution into the aftertreatment solution, uniformly mixing to obtain uniformly dispersed perovskite quantum dot-polymer mixed solution, and preparing the mixed solution into a film, thus the perovskite quantum dot-polymer mixed solution can be applied as a photovoltaic synergistic film. The problems that perovskite quantum dots are easy to erode and aggregate and lose effectiveness are successfully solved by constructing a protective layer on the surface of the quantum dots in situ and utilizing an ionic surfactant to enhance the dispersibility and stability of the perovskite quantum dots in a high polymer matrix. The composite film prepared by the process has strong weather resistance and high quantum dot utilization rate, is applied to the surface of a solar cell, can effectively realize photon wavelength conversion, and improves the photoelectric conversion efficiency of the cell.

Inventors

  • SONG JIAN
  • ZHANG ZHAOXIANG
  • WU YANG

Assignees

  • 中国矿业大学

Dates

Publication Date
20260512
Application Date
20251223

Claims (9)

  1. 1. The quantum dot post-treatment method is characterized by comprising the following steps of: S1, preparing perovskite quantum dot solution; S2, sequentially adding a quantum dot protective layer precursor solution and an ionic surfactant solution into the perovskite quantum dot solution for post-treatment, wherein the ionic surfactant solution can generate strong charge capacity on the surface of the quantum dot, cannot damage the generation of the existing protective layer, simultaneously avoids the aggregation of the quantum dot, and improves the dispersibility of the quantum dot in a polymer, and the mass ratio of the perovskite quantum dot, the quantum dot protective layer precursor and the ionic surfactant is 1 (0.1-1): (0.01-0.1); S3, adding a polymer solution into the post-treated solution, and uniformly mixing to obtain a uniformly dispersed perovskite quantum dot-polymer mixed solution, wherein the mass ratio of the perovskite quantum dot to the polymer is 1 (0.1-10).
  2. 2. The quantum dot post-treatment method according to claim 1, wherein the solvent of the perovskite quantum dot solution is trimethylbenzene or toluene, the concentration of the perovskite quantum dots is 1-10 mg/mL, the solvent of the quantum dot protective layer precursor solution is trimethylbenzene, the concentration of the quantum dot protective layer precursor solution is 0.01-0.05g/mL, the solvent of the ionic surfactant solution is trimethylbenzene, the concentration of the ionic surfactant is 0.01-0.1g/mL, the solvent of the polymer solution is trimethylbenzene, and the concentration of the polymer is 0.05-0.2g/mL.
  3. 3. The method for post-processing the quantum dots according to claim 1, wherein the perovskite quantum dot solution is prepared by mixing an A-site precursor solution, a B-site precursor solution and an X-site precursor solution of the perovskite quantum dots, and the components of the perovskite quantum dots comprise 、 、 、 、 、 Or (b) One or more than two of the above are mixed, wherein n is more than or equal to 2;A bits comprise 、 、 、 、 、 、 、 Or one or more than two of organic amine cations with carbon number not less than 3, wherein the B site comprises 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Or (b) One or more of them are mixed, and the X position includes 、 、 Or (b) One or more of them are mixed.
  4. 4. The method for post-treatment of quantum dots according to claim 1, wherein the precursor in the precursor solution of the quantum dot protective layer comprises one or more of 3-aminopropyl triethoxysilane, tetraethoxysilane, methyltrimethoxysilane, vinyltriethoxysilane, mercaptopropyl trimethoxysilane, 3-glycidoxypropyl trimethoxysilane, N- (2-aminoethyl) -3-aminopropyl trimethoxysilane, octyl triethoxysilane, dodecyl trimethoxysilane, phenyl trimethoxysilane, 3-isocyanatopropyl triethoxysilane, trimethylaluminum and diethyl zinc, and the protective layer comprises 、 、 One or more than two of the quantum dot protective layer precursors are mixed, and the quantum dot protective layer precursors are original substances for generating protective layers.
  5. 5. The quantum dot post-treatment method according to claim 1, wherein the ionic surfactant is selected from one or more of dodecylbenzene sulfonic acid, calcium dodecylbenzene sulfonate, sodium bis (2-ethylhexyl) sulfosuccinate, dioctadecyl dimethyl ammonium chloride, aluminum stearate or barium dinonylnaphthalene sulfonate.
  6. 6. The method for post-treatment of quantum dots according to claim 1, wherein the polymer comprises one or more of ethylene-vinyl acetate copolymer, polymethyl methacrylate, ethylene propylene rubber and ethylene-octene copolymer.
  7. 7. The perovskite quantum dot-polymer mixed solution prepared by the quantum dot post-treatment method according to any one of claims 1-6, which is characterized in that a quantum dot protective layer precursor forms a protective layer on the surface of the quantum dot in situ, and the ionic surfactant improves the dispersibility of the quantum dot in a polymer matrix.
  8. 8. A composite photovoltaic synergistic film generated by the perovskite quantum dot-macromolecule mixed solution is characterized in that a perovskite quantum dot-macromolecule mixed solution is coated on the surface of a battery piece by adopting a knife coating method, a uniform composite photovoltaic synergistic film is formed on the surface of the battery piece after drying, the composite photovoltaic synergistic film comprises the perovskite quantum dot, a quantum dot protection layer and an ionic surfactant, wherein the quantum dot protection layer and the ionic surfactant are sequentially coated on the periphery of the quantum dot, and the quantum dot, the protection layer and the ionic surfactant are jointly dispersed in a macromolecule matrix.
  9. 9. A photovoltaic device is characterized in that the perovskite quantum dot-macromolecule composite photovoltaic synergistic film as a synergistic layer is arranged on the surface of the photovoltaic device, and the photovoltaic device is a crystalline silicon solar cell, a compound solar cell, a perovskite solar cell, an organic solar cell or a polymer solar cell.

Description

Quantum dot post-treatment method and application of composite photovoltaic synergistic film thereof Technical Field The invention relates to the technical field of composite optical films and photovoltaic devices, in particular to a quantum dot post-treatment method and application of a composite photovoltaic synergistic film thereof. Background Perovskite quantum dots have great application potential in the fields of light emitting diodes, display and photovoltaics due to their excellent photoelectric properties (such as high photoluminescence quantum yield, adjustable emission wavelength, narrow half-peak width, etc.). In the photovoltaic field, photons with poor battery response wave bands in solar spectrums are converted into photons with optimal battery response wave bands by utilizing the down-conversion or up-conversion luminescence effect of perovskite quantum dots, and the method is an optical management strategy for effectively improving the efficiency of photovoltaic cells. However, the inherent ionic crystal properties of perovskite quantum dots make them extremely sensitive to water, oxygen, heat and light, and poor stability, severely limiting their practical application. In addition, the quantum dots are easy to agglomerate in a polymer matrix due to high surface energy, so that luminescence quenching and performance reduction are caused. Currently, common methods for improving the stability include surface ligand engineering, inorganic shell coating and encapsulation in a polymer or glass matrix. For example, chinese patent publication No. CN120966473a discloses that CdS is used to coat perovskite quantum dots to improve stability, but the process of the method is more complex, and the problems of the composition of quantum dots and polymers and the dispersibility in the polymers are not involved. Disclosure of Invention Aiming at the defects disclosed in the prior art, the quantum dot post-treatment method capable of effectively overcoming the defects of poor stability, easy agglomeration in a polymer matrix and complex preparation process of a corresponding composite film in the prior art and the application of the composite photovoltaic synergistic film thereof are provided. In order to achieve the above purpose, the invention adopts the following technical scheme: A quantum dot post-treatment method for treating perovskite quantum dot-macromolecule mixed solution comprises the following steps: S1, preparing perovskite quantum dot solution; S2, sequentially adding a quantum dot protective layer precursor solution and an ionic surfactant solution into the perovskite quantum dot solution for post-treatment, wherein the ionic surfactant solution can generate strong charge capacity on the surface of the quantum dot, cannot damage the generation of the existing protective layer, simultaneously avoids the aggregation of the quantum dot, and improves the dispersibility of the quantum dot in a polymer, and the mass ratio of the perovskite quantum dot, the quantum dot protective layer precursor and the ionic surfactant is 1 (0.1-1): (0.01-0.1); S3, adding a polymer solution into the post-treated solution, and uniformly mixing to obtain a uniformly dispersed perovskite quantum dot-polymer mixed solution, wherein the mass ratio of the perovskite quantum dot to the polymer is 1 (0.1-10). Further, the solvent of the perovskite quantum dot solution is trimethylbenzene or toluene, the concentration of the perovskite quantum dots is 1 mg/mL-10 mg/mL, the concentration of the precursor of the quantum dot protection layer is 0.01-0.05g/mL, the solvent of the ionic surfactant solution is trimethylbenzene, the concentration of the ionic surfactant is 0.01-0.1g/mL, the solvent of the polymer solution is trimethylbenzene, and the concentration of the polymer is 0.05-0.2 g/mL Further, the perovskite quantum dot solution is specifically formed by mixing an A-site precursor solution, a B-site precursor solution and an X-site precursor solution of the perovskite quantum dot, wherein the components of the perovskite quantum dot comprise、、、、、Or (b)One or more than two of the above are mixed, wherein n is more than or equal to 2;A bits comprise、、、、、、、Or one or more than two of organic amine cations with carbon number not less than 3, wherein the B site comprises、、、、、、、、、、、、、、、、Or (b)One or more of them are mixed, and the X position includes、、Or (b)One or more of them are mixed. Further, the precursor in the quantum dot protective layer precursor solution comprises one or more than two of 3-aminopropyl triethoxysilane, tetraethoxysilane, methyltrimethoxysilane, vinyl triethoxysilane, mercaptopropyl trimethoxysilane, 3-glycidoxypropyl trimethoxysilane, N- (2-aminoethyl) -3-aminopropyl trimethoxysilane, octyl triethoxysilane, dodecyl trimethoxysilane, phenyl trimethoxysilane, 3-isocyanate propyl triethoxysilane, trimethylaluminum and diethyl zinc, and the protective layer comprises、、One or more than two of the quantum