CN-122012086-A - Method for preparing quantum dot, optical member and electronic device

Abstract

The embodiment provides a method for preparing quantum dots, the quantum dots, an optical member and an electronic device. The method of preparing the quantum dot includes preparing a core including copper (Cu), a group III element, and a group VI element, and preparing a first shell covering the core and including a group II element and a group VI element, wherein preparing the first shell includes preparing a first composition for forming the first shell by mixing the core with a group VI element-containing precursor, and preparing a second composition for preparing the first shell by adding the group II element-containing precursor to the first composition for forming the first shell.

Inventors

• ZHENG JUNHE
• JIN CHENGZAI
• JIN YONGZHI
• Jin Honglai
• Pu Shengyuan
• Yin Bina
• Li Zhaijun

Assignees

• 三星显示有限公司

Dates

Publication Date

20260512

Application Date

20251106

Priority Date

20241112

Claims (20)

1. 1. A method of preparing a quantum dot, wherein the method comprises: preparing a core comprising copper, a group III element and a group VI element, and Preparing a first shell covering the core and comprising a group II element and a group VI element, wherein, The preparing the first shell includes: Preparing a first composition for forming the first shell by mixing the core with a group VI element-containing precursor, and A second composition for preparing the first shell is prepared by adding a group II element-containing precursor to the first composition for forming the first shell.
2. 2. The method of claim 1, wherein in preparing the first composition for forming the first shell by mixing the core and the group VI element-containing precursor, the core and the group VI element-containing precursor are each mixed at a temperature of less than or equal to 100 ℃.
3. 3. The method of claim 1, wherein the method further comprises, after the preparing the second composition for forming the first shell: Heat treating the second composition for forming the first shell.
4. 4. The method of claim 1, wherein, The group VI element included in the core includes B 1 , The group VI element included in the first shell includes B 2 , The group VI element-containing precursor is a B 2 -containing precursor, The B 2 -containing precursor comprises B 2 and an amine compound, and B 1 and B 2 are each independently a group VI element.
5. 5. The method of claim 1, wherein the group III element is aluminum, gallium, indium, thallium, Or any combination thereof.
6. 6. The method of claim 1, wherein the group VI element is oxygen, sulfur, selenium, tellurium, or any combination thereof.
7. 7. The method of claim 1, wherein the group II element is magnesium, calcium, zinc, cadmium, mercury, or any combination thereof.
8. 8. The method of claim 1, wherein the core comprises copper, indium, gallium, and sulfur.
9. 9. The method of claim 1, wherein the first shell comprises a group II-VI semiconductor compound, a group III-V semiconductor compound, or any combination thereof.
10. 10. The method of claim 9, wherein the group II-VI semiconductor compound is CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、ZnO、ZnMgO、HgS、HgSe、HgTe、MgSe、MgS、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、MgZnSe、MgZnS、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe、HgZnSTe or any combination thereof.
11. 11. The method of claim 9, wherein the III-VI semiconductor compound is GaS、GaSe、Ga 2 Se 3 、GaTe、InS、InSe、In 2 S 3 、In 2 Se 3 、InTe、InGaS 3 、InGaSe 3 or any combination thereof.
12. 12. The method of claim 9, wherein the III-V semiconductor compound is GaN、GaP、GaAs、GaSb、AlN、AlP、AlAs、AlSb、InN、InP、InAs、InSb、GaNP、GaNAs、GaNSb、GaPAs、GaPSb、AlNP、AlNAs、AlNSb、AlPAs、AlPSb、InGaP、InNP、InAlP、InNAs、InNSb、InPAs、InPSb、GaAlNP、GaAlNAs、GaAlNSb、GaAlPAs、GaAlPSb、GaInNP、GaInNAs、GaInNSb、GaInPAs、GaInPSb、InAlNP、InAlNAs、InAlNSb、InAlPAs、InAlPSb or any combination thereof.
13. 13. The method of claim 1, wherein the first shell comprises zinc and sulfur.
14. 14. A quantum dot prepared by the method of any one of claims 1 to 13, wherein the quantum dot comprises, based on a total of 100 weight percent of the quantum dot: copper in an amount in the range of 5wt% to 15 wt%; A group III element in an amount in the range of 10wt% to 20 wt%; Group VI element in an amount in the range of 40 to 50 weight percent, and Group II elements in an amount ranging from 25wt% to 35 wt%.
15. 15. The quantum dot of claim 14, wherein the quantum dot emits light having a peak emission wavelength in the range of 500nm to 650 nm.
16. 16. The quantum dot of claim 14, wherein the quantum yield of the quantum dot is in the range of 70% to 98%.
17. 17. The quantum dot of claim 14, wherein the full width at half maximum of the emission wavelength spectrum of the quantum dot is less than or equal to 55nm.
18. 18. An optical member, wherein the optical member comprises: the quantum dot according to any one of claims 14 to 17.
19. 19. An electronic device, wherein the electronic device comprises: the quantum dot according to any one of claims 14 to 17.
20. 20. The electronic device of claim 19, wherein the electronic device comprises: A light source, and A color conversion member disposed in a path of light emitted from the light source, wherein, The color conversion member includes the quantum dots.

Description

Method for preparing quantum dot, optical member and electronic device Cross Reference to Related Applications The present application claims priority and rights of korean patent application No. 10-2024-0160489 filed in the korean intellectual property office on day 11 and 12 of 2024, the entire contents of which are incorporated herein by reference. Technical Field Embodiments relate to a method of preparing a quantum dot, an optical member including a quantum dot, and an electronic device including a quantum dot. Background Quantum dots can be used as materials for performing various optical functions (e.g., light conversion functions, light emission functions, etc.) in optical members and various electronic devices. Quantum dots are nanoscale semiconductor nanocrystals that exhibit quantum confinement effects, and by controlling the size, composition, etc. of nanocrystals, quantum dots can have different energy bandgaps, and thus, can emit light having various emission wavelengths. The optical member including such quantum dots may take the form of a thin film (e.g., may take the form of a thin film patterned for each sub-pixel). Such an optical member may also be used as a color conversion member in a device including various light sources. Quantum dots can be used for a variety of purposes in a variety of electronic devices. For example, quantum dots may also be used as emitters. As an example, quantum dots may be included in an emission layer of a light emitting element including a pair of electrodes and an emission layer, and may serve as emitters. Currently, in order to realize high-quality optical members and electronic devices, it is required to develop quantum dots that have excellent Quantum Yield (QY) and do not include cadmium (toxic element). It will be appreciated that this background section is intended to provide, in part, a useful background for understanding the present technology. However, the background section may also include ideas, or insights that are not part of what is known or understood by those of skill in the relevant art prior to the corresponding effective submission date of the subject matter disclosed herein. Disclosure of Invention Embodiments include methods of preparing quantum dots, optical members including quantum dots, and electronic devices including quantum dots. Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the embodiments of the disclosure. According to an embodiment, a method of preparing a quantum dot may include: preparing a core comprising copper (Cu), a group III element and a group VI element, and Preparing a first shell covering the core and comprising a group II element and a group VI element, wherein, The preparing of the first shell may include: preparing a first composition for forming a first shell by mixing a core with a group VI element-containing precursor, and A second composition for forming the first shell is prepared by adding a group II element-containing precursor to the first composition for forming the first shell. In embodiments, in preparing the first composition for forming the first shell by mixing the core with the group VI element-containing precursor, the core and the group VI element-containing precursor may each be mixed at a temperature of less than or equal to about 100 ℃. In an embodiment, the method may further include, after preparing the second composition for forming the first shell, heat treating the second composition for forming the first shell. In an embodiment, the group VI element included in the core may include B 1, the group VI element included in the first shell may include B 2, the group VI element-containing precursor may be a B 2 -containing precursor, the B 2 -containing precursor may include B 2 and an amine compound, and B 1 and B 2 may each independently be a group VI element. In an embodiment, the group III element may be aluminum (Al), gallium (Ga), indium (In), thallium (Tl),(Nh) or any combination thereof. In an embodiment, the group VI element may be oxygen (O), sulfur (S), selenium (Se), tellurium (Te), or any combination thereof. In an embodiment, the group II element may be magnesium (Mg), calcium (Ca), zinc (Zn), cadmium (Cd), mercury (Hg), or any combination thereof. In an embodiment, the core may include copper (Cu), indium (In), gallium (Ga), and sulfur (S). In an embodiment, the first shell may include a group II-VI semiconductor compound, a group III-V semiconductor compound, or any combination thereof. In embodiments, the group II-VI semiconductor compound may be CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、ZnO、ZnMgO、HgS、HgSe、HgTe、MgSe、MgS、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、MgZnSe、MgZnS、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe、HgZnSTe or any combination thereof. In embodiments, the III-V