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CN-122012089-A - Etching method of lead sulfide quantum dots

CN122012089ACN 122012089 ACN122012089 ACN 122012089ACN-122012089-A

Abstract

The invention provides an etching method of lead sulfide quantum dots, and Tetrahydrofuran (THF) organic solution has a certain etching effect on lead sulfide (PbS) solid quantum dots at room temperature. The quantum dots used in the invention are PbS quantum dots with absorption peaks in the range of 880-1700 nm synthesized by a cation exchange method or a thermal injection method, a series of quantum dots with different sizes can be obtained by adjusting the concentration of the PbS quantum dots in THF, and the more the amount of THF solvent is, the more obvious the etching effect of the PbS quantum dots is, and the shorter the absorption wavelength of the quantum dots is compared with before etching. The condition of THF solution etching the quantum dot is mild, the operation is simple, and the quantum dot with smaller absorption peak position is more sensitive to THF etching effect.

Inventors

  • ZHANG JIANBING
  • ZHANG CHENYU
  • Deng Baiyi
  • LUO HAO
  • LIU YANG

Assignees

  • 华中科技大学温州先进制造技术研究院

Dates

Publication Date
20260512
Application Date
20251224

Claims (7)

  1. 1. The etching method of the lead sulfide quantum dot is characterized by comprising the following steps of: Dissolving PbS quantum dots in a THF organic solution for etching to obtain a uniform quantum dot solution, wherein the absorption peak value of the PbS quantum dots is within the range of 880-1700 nm; and adding an antisolvent into the uniform quantum dot solution, centrifuging and drying to obtain the etched PbS quantum dot solid.
  2. 2. The method for etching lead sulfide quantum dots according to claim 1, wherein the concentration of the PbS quantum dots in the THF organic solution is 0.5-50 mg/mL in the quantum dot solution.
  3. 3. The method for etching lead sulfide quantum dots according to claim 2, wherein the concentration of the PbS quantum dots in the THF organic solution is 1-25 mg/mL in the quantum dot solution.
  4. 4. The method for etching lead sulfide quantum dots according to claim 1, wherein the mixed dissolution of the PbS quantum dots and the THF organic solution is performed at room temperature.
  5. 5. The method of etching lead sulfide quantum dots according to any one of claims 1 to 4, wherein the antisolvent is 4 to 9 times the volume of the THF organic solution.
  6. 6. The method for etching lead sulfide quantum dots according to claim 5, wherein the antisolvent is ethanol, acetone or acetonitrile.
  7. 7. A lead sulfide quantum dot, characterized in that the lead sulfide quantum dot is prepared by the etching method of the lead sulfide quantum dot according to any one of claims 1 to 7.

Description

Etching method of lead sulfide quantum dots Technical Field The invention relates to the field of post-treatment of PbS colloid quantum dots, in particular to an etching method of lead sulfide quantum dots. Background Short Wave Infrared (SWIR) refers to infrared light with the wavelength in the range of 800-2500 nm, so that strong light interference in a visible light wave band can be effectively avoided, extremely high optical penetrability and signal identification degree are achieved, and signal transmission and detection in a longer distance and deeper level are realized. Due to the unique capability, the SWIR imaging technology is widely applied to the civil and military fields such as night vision devices, component identification, biological detection, remote sensing mapping, photovoltaics, photoelectric detection and the like. Compared with infrared light with longer wavelength, short wave infrared light of about 1000 nm has the advantages of low preparation cost, adaptability to silicon-based photoelectric detectors, no need of relying on high refrigeration components and the like. The material in the short-wave infrared optical window comprises a traditional inorganic nano material and an organic dye, wherein PbS quantum dots are used as typical IV-VI group colloid semiconductor materials, the particle size of the quantum dots can be accurately regulated and controlled by controlling the reaction time and the precursor concentration in the synthesis process, and the accurate positioning of the absorption peak position at about 1000 nm is realized, so that the material has unique optical and electrical properties. However, the mature PbS quantum dot at present has harsh synthesis reaction conditions and complex process, and synthesis experiments need to be repeatedly carried out for preparing quantum dots with different sizes, so that the cost is high. In addition, accurate regulation and control of the quantum dot size are difficult to realize in the actual synthesis process, and the application requirements of partial precise scenes are difficult to meet. In view of the foregoing, it is desirable to provide a method for simply and efficiently adjusting the size distribution of PbS quantum dots to solve the above-mentioned problems. Disclosure of Invention Based on the problems in the prior art, the invention provides a method for etching lead sulfide quantum dots, which can be directly carried out in an environmental state, and PbS quantum dots are mixed with THF organic solution, so that the absorption peak position of the PbS quantum dots is regulated and controlled. According to the method, a series of quantum dots with different sizes can be obtained, and the absorption wavelength of the etched PbS quantum dots is blue shifted compared with that before etching. The method is simple to operate, the experimental conditions are mild, and the quantum dots with smaller absorption peak positions are more sensitive to the etching effect of THF. In order to achieve the above object, the first aspect of the present invention provides a method for etching a lead sulfide quantum dot, which specifically comprises the following steps: An etching method of lead sulfide quantum dots comprises the following steps: Dissolving PbS quantum dots in a THF organic solution for etching to obtain a uniform quantum dot solution, wherein the absorption peak value of the PbS quantum dots is within the range of 880-1700 nm; and adding an antisolvent into the uniform quantum dot solution, centrifuging and drying to obtain the etched PbS quantum dot solid. Further, in the quantum dot solution, the concentration of the PbS quantum dot in the THF organic solution is 0.5-50 mg/mL. Further, in the quantum dot solution, the concentration of the PbS quantum dot in the THF organic solution is 1-25 mg/mL. Further, the mixed dissolution of the PbS quantum dots and the THF organic solution is performed at room temperature. Further, the volume of the antisolvent is 4-9 times that of the THF organic solution. Further, the antisolvent is ethanol, acetone or acetonitrile. In order to achieve the above purpose, the second aspect of the present invention provides a lead sulfide quantum dot, which has the following specific technical scheme: The lead sulfide quantum dot is prepared by the etching method of the lead sulfide quantum dot. In conclusion, the THF organic solvent etching method has the beneficial effects that the THF organic solvent etching method is simple to operate, no conditions such as no water, no oxygen and the like are needed, and the operation efficiency is extremely high compared with the existing chemical synthesis method. By adjusting the dissolution concentration of the quantum dots in THF, a series of PbS quantum dots with different size distributions can be effectively obtained in the air, and the quantum dots with smaller absorption peak positions are more sensitive to the etching action of THF. Drawings In ord