Search

CN-122012098-A - Acidic etching solution composition, etching method and application

CN122012098ACN 122012098 ACN122012098 ACN 122012098ACN-122012098-A

Abstract

The application provides an acidic etching solution composition which comprises, by weight, 60-80% of nitric acid, 10-20% of hydrofluoric acid and 10-20% of acetic acid. The application also provides an etching method for removing gas jet hole drilling damage, application of the acidic etching liquid composition and an electrode for a plasma etching system.

Inventors

  • ZHOU JIAN
  • SUN YUJIE

Assignees

  • 荣达材料(西安)有限公司

Dates

Publication Date
20260512
Application Date
20260129

Claims (10)

  1. 1. The acid etching solution composition is characterized by comprising, by weight, 60-80% of nitric acid, 10-20% of hydrofluoric acid and 10-20% of acetic acid.
  2. 2. The acidic etchant composition of claim 1, further comprising water and/or additional components, wherein the additional components are one or more of wetting agents, corrosion inhibitors, surfactants.
  3. 3. The acidic etching solution composition according to claim 1 or 2, wherein the composition of the acidic etching solution composition comprises 65 to 75wt% of nitric acid, 12 to 18wt% of hydrofluoric acid, 12 to 18wt% of acetic acid, and the balance of water, based on the total mass.
  4. 4. The acidic etching solution composition according to claim 1 or 2 further comprising 0.01-5wt% of a wetting agent and/or 0.01-5wt% of a surfactant.
  5. 5. An etching method for removing gas jet drilling damage, the etching method comprising: Installing an electrode having a plurality of gas injection holes in an etching apparatus such that an axial direction of the gas injection holes is substantially arranged in a gravitational direction, wherein the electrode is used in a plasma etching system; The method according to claim 1 to 4, wherein the acidic etchant composition is introduced into the etching apparatus so as to flow downward through the inner wall of the gas injection hole, and And maintaining the acidic etching solution composition to flow downwards, and etching the electrode for 3.8-4.2 minutes.
  6. 6. The etching method according to claim 5, wherein the average etching rate of the electrode by the acidic etching liquid composition is 12.6 to 12.9 μm/min.
  7. 7. The etching method according to claim 5, wherein flowing the acidic etching liquid composition downward through the inner wall of the gas injection hole comprises: The acidic etching solution composition is enabled to continuously flow downwards on the inner wall of the gas jet hole by adjusting the flow rate of the etching solution and the pressure of the supply solution.
  8. 8. The use of an acidic etchant composition according to any one of claims 1 to 4 for removing drilling damage and residual particles on the inner wall of a gas injection hole in an electrode for a plasma etching system.
  9. 9. The use of the acidic etchant composition according to claim 8, wherein the gas spraying holes are micro holes extending through the thickness direction of the electrode, and the etching removal amount of the inner wall of the gas spraying holes is 50-52 μm by allowing the acidic etchant composition to flow downward through the inner wall of the gas spraying holes under the conditions that the etching temperature is 20-40 ℃ and the etching time is 3.8-4.2 minutes.
  10. 10. An electrode for a plasma etching system, characterized in that a plurality of gas injection holes penetrating the thickness direction of the electrode are formed inside the electrode, the electrode being obtained by etching according to the etching method of any one of claims 5 to 7.

Description

Acidic etching solution composition, etching method and application Technical Field The application relates to the field of etching liquid and etching, in particular to an acidic etching liquid composition, an etching method and application. Background In semiconductor manufacturing, a plasma Etching (etc) system is a core device that implements wafer pattern transfer and material removal. Among them, a key component installed at the upper part of the ETCH system and bearing the process gas uniform injection action is called an electrode. The electrode is generally internally processed with a large number of fine gas injection holes penetrating through the thickness direction for distributing the process gas to the reaction chamber to form a uniform plasma distribution. In order to ensure plasma density stability and etching uniformity, the gas injection holes are required to have uniform pore diameters, morphologies and aspect ratios, and mechanical damage or particle contamination caused by drilling processing must not remain inside the holes. However, since the electrode material generally includes a high hardness material such as quartz, ceramic or composite oxide, these micro-holes are required to be formed by high-speed drilling or laser processing, and a hole wall damage layer, micro-cracks and crushed particles are inevitably generated during the processing. If these damages are not effectively removed, they will cause particle flaking, abnormal plasma distribution and even process contamination in the subsequent etching process. Therefore, there is a general need in the industry to dissolve and remove drilling damage and carry out residual particles by flowing an etching liquid in the direction of the micro-holes and sufficiently contacting the inner walls of the holes by means of chemical etching equipment. Therefore, there is a need for an etchant composition suitable for the internal treatment of electrode holes, which not only can effectively remove damaged layers, but also has a sufficiently fast etching rate to shorten the treatment process time, improve the production efficiency, and enhance the repairing effect of the sidewall of the gas injection hole. Especially in deep holes and high aspect ratio structures, the problems of insufficient reaction, uneven etching, bubble retention and the like of conventional etching solutions in the hole bottom area are more remarkable, so that the component system and proportion of the etching solutions need to be optimized to realize quick, uniform and efficient repair of the whole hole wall. At present, some solutions disclose mixed acid systems with nitric acid, hydrofluoric acid and organic acid as main components, for example, a combination of nitric acid, hydrofluoric acid and organic acid is adopted, and the aim of synchronous etching of the thin film lamination is achieved by adjusting the proportion of the mixed acid systems. The proposal is mainly oriented to a planar film structure, emphasizes the film selectivity and the surface microroughness control, and the etching object is a nano-scale thin layer instead of a millimeter-scale deep hole structure, and meanwhile, the proportion of nitric acid and hydrofluoric acid disclosed by the proposal is far lower than the range required for repairing deep hole damage, and can not meet the requirement of rapid deep etching in a high aspect ratio micro gas jet hole. In addition, the scheme does not relate to a drilling damage removal mechanism in the electrode fine gas jet hole, and is not consistent with key requirements of optimizing deep fluid exchange, reducing bubble retention, improving deep hole etching efficiency and the like. In other solutions, nitric acid and hydrofluoric acid are adopted as etching systems, but the immersion etching process mainly faces the glass substrate, the component systems contain phosphoric acid, hydrochloric acid and anionic surfactant, which are not in accordance with the requirements of deep hole etching processes, and the etching object is a planar substrate, so that the engineering problems of damage removal of the inner wall of a pore canal with high aspect ratio, uneven etching of the bottom of the pore, rapid stripping of a damaged layer and the like are not solved. Therefore, the prior art cannot meet the special requirements of repairing the micro holes of the ETCH electrode in the aspects of etching liquid system components, component proportion, process mode and etching objects, and particularly cannot achieve the high etching rate, deep hole uniformity and side wall smoothness. It should be noted that the above information disclosed in this section is only for understanding the background of the inventive concept of the present application, and thus, the above information may include information that does not constitute prior art. Disclosure of Invention In view of the above, the application provides an acidic etching solution composition, an etching met