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CN-122012967-A - Preparation method of nanoscale densification tungsten-copper alloy

CN122012967ACN 122012967 ACN122012967 ACN 122012967ACN-122012967-A

Abstract

The application relates to a preparation method of a nanoscale densification tungsten-copper alloy, which comprises the steps of performing chromium ion implantation on tungsten powder, spraying a copper-titanium composite layer to obtain modified tungsten powder, mixing the modified tungsten powder and copper powder with a certain mass by using an ultrasonic auxiliary double-planetary mixer to obtain mixed powder, molding the mixed powder to obtain a blank, and performing vacuum sintering on a blank to obtain the copper-tungsten alloy. The modified tungsten powder is implanted into chromium ion to form tungsten-chromium solid solution, so as to improve the surface activity and diffusion capacity of tungsten, solve the problem of poor intersolubility of tungsten and copper, provide metallurgical reaction active sites, form Ti-W, ti-Cu phase by titanium in the copper-titanium composite layer, construct an interface transition layer, convert mechanical engagement into metallurgical engagement to enhance interface strength, and improve wettability-assisted liquid copper to fill gaps. The ultrasonic-assisted double-planetary mixer breaks the agglomeration of nano powder through vibration and revolution rotation, enhances powder contact to realize uniform mixing, reduces the interface energy of copper and tungsten by matching with a copper-titanium composite layer, and ensures the uniformity of components.

Inventors

  • FENG LI
  • LI JIANGBIN
  • ZHANG SHILI
  • JIANG WEIFENG
  • He Erping

Assignees

  • 深圳市好利时实业有限公司

Dates

Publication Date
20260512
Application Date
20260414

Claims (10)

  1. 1. The preparation method of the nano-scale densified tungsten-copper alloy is characterized by comprising the following steps of: S1, performing chromium ion implantation on tungsten powder, and then spraying a copper-titanium composite layer to obtain modified tungsten powder; S2, mixing modified tungsten powder and copper powder with certain mass by using an ultrasonic auxiliary double-planetary mixer to obtain mixed powder; S3, molding the mixed powder to prepare a blank; and S4, sintering the blank in vacuum to obtain the copper-tungsten alloy.
  2. 2. The method for preparing a nano-scale densified tungsten-copper alloy according to claim 1, wherein the particle size of the tungsten powder is 50-200nm and the particle size of the copper powder is 30-50nm.
  3. 3. The method for preparing nano-scale densified tungsten-copper alloy according to claim 1, wherein in step S1, chromium ion implantation is performed on tungsten powder by using an ion implanter, wherein the energy of chromium ion is 50-80keV, the dosage is 5 x 10 15 ions/cm2, and the vacuum degree is <1 x 10 -4 Pa.
  4. 4. The method for preparing the nano-scale densified tungsten-copper alloy according to claim 1, wherein the sprayed copper-titanium composite layer is prepared into a copper-titanium composite layer with the thickness of 5-10nm by adopting atomic layer deposition, the deposition temperature is 200-250 ℃, and argon is used as purge gas; The mass fraction of titanium in the copper-titanium composite layer is 5%, and the balance is copper.
  5. 5. The method for preparing a nano-scale densified tungsten copper alloy according to claim 1, wherein the mass ratio of the modified tungsten powder to the copper powder in the mixed powder is 80% and 20%, respectively.
  6. 6. The method for preparing the nano-scale densified tungsten-copper alloy according to claim 1, wherein the rotation speed of the ultrasonic-assisted double-planetary mixer is set to be 60-100r/min revolution, 150-200r/min rotation, mixing time is 60-90min, ultrasonic power is 100-200W, and frequency is 20-40kHz.
  7. 7. The method of claim 1, wherein the mixed powder is formed into a blank by a compression molding or metal injection molding process.
  8. 8. The method for preparing a nano-scale densified tungsten copper alloy according to claim 7, wherein the press molding is performed by press molding the mixed powder using a powder metallurgy press molding apparatus.
  9. 9. The method for preparing nano-scale densified tungsten-copper alloy according to claim 7, wherein the metal injection molding process is to introduce the mixed powder into an injection molding machine to perform injection molding to obtain a blank, degreasing, and sintering to obtain the final product.
  10. 10. The method for preparing the nano-scale densified tungsten-copper alloy according to claim 1, wherein the vacuum sintering is divided into three stages, namely, the first stage is heat-preserving for 30 minutes at 400-600 ℃, the second stage is heat-preserving for 60 minutes at 800-1000 ℃, and the third stage is heat-preserving for 45 minutes at 1100-1200 ℃.

Description

Preparation method of nanoscale densification tungsten-copper alloy Technical Field The application belongs to the technical field of powder metallurgy, and particularly relates to a preparation method of a nanoscale densification tungsten copper alloy. Background The tungsten-copper alloy is used as a typical tungsten-based composite material, and takes up an irreplaceable position in the high-end manufacturing fields of aerospace engine heat sink parts, high-power electronic packaging heat dissipation modules, nuclear industry shielding materials and the like by virtue of the high melting point and high hardness of a tungsten phase and the excellent electric conductivity and heat conductivity of a copper phase. The interfacial intersolubility of tungsten and copper is extremely poor, the surface atomic activity of pure tungsten is low, the diffusion coefficient is small, the tungsten-copper interface is difficult to form effective metallurgical bonding in the sintering process, the connection can be realized only by means of mechanical occlusion, the interfacial bonding strength is low, a large number of pores are easy to remain at the interface, and the densification process of the alloy is obviously hindered. The density difference between the nano tungsten powder (density of about 19.3g/cm 3) and copper powder (density of about 8.96g/cm 3) is obvious, the surface energy of the nano powder is extremely high, hard agglomeration is easy to form, segregation is easy to occur in the mixing process, high-density tungsten powder is easy to settle and agglomerate, and low-density copper powder is easy to float and enrich, so that the components of the mixed powder are unevenly distributed. The tiny gaps in the tungsten aggregate become inherent pores which are difficult to eliminate after sintering, because the melting point of tungsten is as high as 3410 ℃ and far higher than the common sintering temperature, solid particle forms are always kept during sintering, copper (melting point 1083.4 ℃) can be melted into liquid state during sintering, liquid copper which should fill gaps of tungsten particles is filled, but the tungsten aggregate structure is compact and difficult to permeate, tungsten-tungsten particles can be connected only by weak mechanical occlusion, the gaps can not be closed, and a large number of gap pores remain. Disclosure of Invention The embodiment of the application aims to provide a preparation method of a nanoscale densification tungsten-copper alloy, which aims to solve the technical problem that the tungsten-copper alloy is difficult to realize high-efficiency densification in the prior art. In order to achieve the purpose, the technical scheme adopted by the application is that the preparation method of the nanoscale densification tungsten copper alloy comprises the following steps: S1, performing chromium ion implantation on tungsten powder, and then spraying a copper-titanium composite layer to obtain modified tungsten powder; S2, mixing modified tungsten powder and copper powder with certain mass by using an ultrasonic auxiliary double-planetary mixer to obtain mixed powder; S3, molding the mixed powder to prepare a blank; and S4, sintering the blank in vacuum to obtain the copper-tungsten alloy. Optionally, the particle size of the tungsten powder is 50-200nm, and the particle size of the copper powder is 30-50nm. Optionally, in the step S1, the ion implanter is used for implanting chromium ions into the tungsten powder, wherein the energy of the chromium ions is 50-80keV, the dosage is 5×10 15 ions/cm < 2 >, and the vacuum degree is <1×10 -4 Pa. Optionally, the sprayed copper-titanium composite layer adopts atomic layer deposition to prepare a copper-titanium composite layer with the thickness of 5-10nm, the deposition temperature is 200-250 ℃, and argon is used as purge gas; The mass fraction of titanium in the copper-titanium composite layer is 5%, and the balance is copper. Optionally, the mass ratio of the modified tungsten powder to the copper powder in the mixed powder is 80% and 20%, respectively. Optionally, the rotating speed of the ultrasonic auxiliary double-planetary mixer is set to be revolution 60-100r/min, rotation 150-200r/min, mixing time is 60-90min, ultrasonic power is 100-200W, and frequency is 20-40kHz. Optionally, the mixed powder is made into a blank by a compression molding or metal injection molding process. Optionally, the compacting is performed by compacting the mixed powder using a powder metallurgy compacting apparatus. Optionally, the metal injection molding process firstly introduces the mixed powder into an injection molding machine for injection molding to obtain a blank, degreasing, and then sintering to obtain the finished product. Optionally, the vacuum sintering is divided into three stages, namely, the first stage is heat-preserved for 30 minutes at 400-600 ℃, the second stage is heat-preserved for 60 minutes at 800-1000 ℃, and the third s