Search

CN-122013111-A - Method for preparing amorphous film

CN122013111ACN 122013111 ACN122013111 ACN 122013111ACN-122013111-A

Abstract

The present invention relates to a method for producing an amorphous film. There is provided a method for forming an amorphous layer on one surface of a second substrate by a simple method of performing laser irradiation on a multi-layered metal layer provided on a first substrate, wherein the multi-layered metal layer has a thickness of 1.5 μm to 3.0 μm.

Inventors

  • YIN JINGHUAN
  • XIN FUJIAN
  • Pu Zhenghu
  • XU YINKUI
  • QIU SUYING
  • Liu Rancai

Assignees

  • 株式会社LG化学

Dates

Publication Date
20260512
Application Date
20190611
Priority Date
20180615

Claims (10)

  1. 1. A method for preparing an amorphous thin film, the method comprising: Forming a multi-layered metal layer in which a first metal layer, a second metal layer, and a third metal layer are sequentially disposed by sequentially depositing the first metal, the second metal, and the third metal on one surface of a first substrate; Positioning one surface of the second substrate to face the one surface of the first substrate, and Forming an amorphous layer including the first metal, the second metal, and the third metal on the one surface of the second substrate by irradiating the first substrate with laser light in a direction from the other surface of the first substrate to the one surface, Wherein the thickness of the multi-layered metal layer is 1.5 μm to 3.0 μm.
  2. 2. The method of claim 1, wherein the depositing of the metal is performed by any one of sputtering, electron beam deposition, thermal deposition, plasma chemical vapor deposition, and low pressure chemical vapor deposition.
  3. 3. The method of claim 1, wherein a light reflectance of the first metal layer is less than a light reflectance of each of the second metal layer and the third metal layer.
  4. 4. The method of claim 1, wherein a light reflectance of a laminate composed of the first metal layer and the first substrate is 45% or less.
  5. 5. The method of claim 1, wherein a difference between a highest melting point value and a lowest melting point value among melting points of the first to third metal layers is 200 ℃ to 500 ℃.
  6. 6. The method of claim 1, wherein the laser irradiation is performed at an output of 1W/cm 2 to 10W/cm 2 .
  7. 7. The method of claim 1, wherein the laser irradiation is performed at a scan rate of 1 mm/sec to 20 mm/sec.
  8. 8. The method of claim 1, wherein the laser irradiation is performed at a spot size of 10 μm to 200 μm.
  9. 9. The method of claim 1, wherein the laser has a pulse repetition rate of 1 kHz to 40 kHz.
  10. 10. The method of claim 1, wherein the amorphous layer has a thickness of 0.01 μιη to 3 μιη.

Description

Method for preparing amorphous film The application relates to a division application of Chinese patent application with the application date of 2019, 6, 11, the application number of 201980007566.8 and the name of 'method for preparing amorphous film'. Technical Field The present invention relates to a method for producing an amorphous thin film capable of easily forming an amorphous layer by laser irradiation. Background Amorphous metal theoretically means a metal without grain boundaries. In addition, generally, amorphous metals may have micro crystallinity but have a short range order, so that there is an advantage in that a phenomenon in which breakage from grain boundaries, which are positions where defects are generated, can be reduced when an external force is applied. That is, amorphous metals have an aspect of excellent mechanical properties compared to pure metals or alloys having crystallinity. In order to prepare amorphous metals, generally, different metals of three or more components are adjusted according to composition, dissolved in molten metal and prepared as bulk amorphous alloys. However, since the melting temperature of each metal has a difference, it is difficult to uniformly control the composition during melting, thereby causing a problem of partially generating a crystalline phase. The generated crystal phase is a main site where defects occur and becomes a starting point of cracks generated by an external force, thereby causing a problem that the alloy breaks due to the cracks. Further, since the amorphous alloy prepared by the method in the related art is not thick enough to be processed, there is a problem in that it is difficult to form the amorphous alloy in the form of a thin film. Therefore, a technique capable of manufacturing an amorphous thin film having a uniform composition is required. Disclosure of Invention Technical problem Accordingly, the present invention has been made in an effort to provide a method for preparing an amorphous thin film capable of easily preparing an amorphous layer. However, the problems to be solved by the present invention are not limited to the foregoing problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description. Technical proposal An exemplary embodiment of the present invention provides a method for preparing an amorphous thin film, the method including forming a multi-layered metal layer in which a first metal layer, a second metal layer, and a third metal layer are sequentially disposed by sequentially depositing the first metal, the second metal, and the third metal on one surface of a first substrate, positioning one surface of the second substrate to face the one surface of the first substrate, and forming an amorphous layer including the first metal, the second metal, and the third metal on the one surface of the second substrate by irradiating the first substrate with laser light in a direction from the other surface of the first substrate to the one surface. Advantageous effects The method for preparing an amorphous thin film according to an exemplary embodiment of the present invention may form an amorphous layer on a second substrate by a simple method of irradiating a plurality of metal layers disposed on the first substrate with laser light. The effects of the present application are not limited to the above-described effects, and effects not mentioned will be clearly understood by those skilled in the art from the description and drawings of the present application. Drawings Fig. 1 is a diagram illustrating a process of preparing an amorphous thin film according to an exemplary embodiment of the present invention. Fig. 2 is a graph showing light reflectance of each of the first, second, and third laminates according to an exemplary embodiment of the present invention. Fig. 3 is a set of Scanning Electron Microscope (SEM) photographs of the surfaces of the amorphous layers prepared in example 1 and comparative example 1 of the present invention. Fig. 4a is a graph showing the X-ray diffraction spectrum (XRD) analysis result of the amorphous layer prepared in example 1 of the present invention, fig. 4b is a graph showing the XRD analysis result of the amorphous layer prepared in example 2 of the present invention, fig. 4c is a graph showing the XRD analysis result of the amorphous layer prepared in reference example 1 of the present invention, fig. 4d is a graph showing the XRD analysis result of the amorphous layer prepared in reference example 2 of the present invention, and fig. 4e is a graph showing the XRD analysis result of the multilayer metal layer prepared in example 1 of the present invention. Fig. 5 is a phase diagram showing the composition ranges of the multilayered metal layer and the amorphous layer prepared in example 1 of the present invention. Detailed Description Throughout the specification of the present application, when a section "include