CN-122013120-A - Process chamber and semiconductor process equipment

Abstract

The application relates to the technical field of semiconductors and discloses a process chamber and semiconductor process equipment. The process chamber comprises a first process pipe, an exhaust cavity, at least two exhaust through holes, at least two exhaust communicating pipes and at least two exhaust communicating pipes, wherein the exhaust cavity is connected to the outer wall of the first process pipe, the exhaust cavity is internally provided with a partition wall which divides the exhaust cavity into a first exhaust cavity close to the first process pipe and a second exhaust cavity far away from the first process pipe, one end of the second exhaust cavity along a first direction is communicated with the first exhaust cavity, the exhaust pipe is connected to the side edge of the exhaust cavity and is communicated with the other end of the second exhaust cavity along the first direction, the at least two exhaust through holes are arranged on the first process pipe along the first direction and are used for communicating the first exhaust cavity with the first process pipe, one end of each exhaust communicating pipe is connected with the partition wall, and the other end of each exhaust communicating pipe is connected with the first process pipe so as to communicate the second exhaust cavity with the first process pipe. The application improves the processing quality of the wafer.

Inventors

• LAN LIGUANG
• SHI XIAOPING

Assignees

• 北京北方华创微电子装备有限公司

Dates

Publication Date

20260512

Application Date

20241108

Claims (10)

1. 1. A process chamber, comprising: A first process tube; the exhaust cavity is connected to the outer wall of the first process pipe, a separation wall is arranged in the exhaust cavity, the separation wall separates the exhaust cavity into a first exhaust cavity close to the first process pipe and a second exhaust cavity far away from the first process pipe, and one end of the second exhaust cavity along a first direction is communicated with the first exhaust cavity, wherein the first direction is the axial direction of the first process pipe; The exhaust pipe is connected to the side edge of the exhaust cavity and is communicated with the other end of the second exhaust cavity along the first direction; At least two exhaust through holes which are arranged on the first process pipe along the first direction and communicate the first exhaust cavity with the first process pipe; at least two exhaust communication pipes are arranged in the first exhaust chamber along the first direction, and one end of each exhaust communication pipe is communicated with the partition wall, and the other end of each exhaust communication pipe is communicated with the first process pipe so as to communicate the second exhaust chamber with the first process pipe.
2. 2. The process chamber of claim 1, wherein the exhaust communication tube extends from the partition wall to an inner wall of the first process tube in a second direction within the first exhaust chamber, wherein the second direction is perpendicular to the first direction.
3. 3. The process chamber of claim 2, wherein an end of the exhaust communication tube remote from the partition wall is positioned within the exhaust through-hole and the exhaust communication tube is disposed concentric with the exhaust through-hole.
4. 4. The process chamber of claim 2, wherein the exhaust through holes and the exhaust communication tubes are staggered at equal intervals in the first direction.
5. 5. The process chamber of claim 1, wherein a gas flow area of the exhaust through hole is the same as a gas flow area of the exhaust communication tube.
6. 6. The process chamber of claim 1, wherein the exhaust pipe is located at a bottom end of the first process tube and the first exhaust chamber is closed at an end proximate the exhaust pipe.
7. 7. The process chamber of claim 6, wherein an end of the partition wall in the first direction away from the exhaust pipe forms a communication with the exhaust chamber, the communication communicating the first exhaust chamber and the second exhaust chamber.
8. 8. The process chamber of claim 1, comprising a second process tube for receiving a boat, the second process tube nested within the first process tube and forming an exhaust gap with the first process tube, the exhaust gap communicating the exhaust through hole and the exhaust communication tube.
9. 9. The process chamber of claim 7, wherein a side of the second process tube facing the exhaust cavity is provided with an exhaust slit extending in the first direction and a perpendicular projection in the second direction covers the exhaust through hole and the exhaust communication tube.
10. 10. A semiconductor processing apparatus comprising a process chamber according to any one of claims 1-9.

Description

Process chamber and semiconductor process equipment Technical Field The application relates to the technical field of semiconductors, in particular to a process chamber and semiconductor process equipment. Background Along with the rapid iterative updating of integrated circuit technology, electronic components are promoted to develop towards miniaturization, integration and high efficiency, which also puts higher requirements on film deposition technology and etching technology, a process chamber is used as a component part in semiconductor equipment, on one hand, process gas can be restrained to react, required film materials are deposited on the surface of a wafer on a wafer boat, on the other hand, process gas residual gas and side reactants are pumped out from an exhaust port, and in the related technology, the process chamber adopts a Cross Flow (Cross Flow) air inlet mode to process a large number of wafers, but the uniformity and consistency of the process gas acted on the wafer cannot be guaranteed by the process chamber, and the processing quality of the wafer is affected. Disclosure of Invention In view of the above, the present application provides a process chamber and a semiconductor processing apparatus for improving uniformity and consistency of deposition of a wafer film. To achieve the above object, according to a first aspect, the following technical solution is adopted: A process chamber, comprising: A first process tube; the exhaust cavity is connected to the outer wall of the first process pipe, a separation wall is arranged in the exhaust cavity, the separation wall separates the exhaust cavity into a first exhaust cavity close to the first process pipe and a second exhaust cavity far away from the first process pipe, and one end of the second exhaust cavity along a first direction is communicated with the first exhaust cavity, wherein the first direction is the axial direction of the first process pipe; The exhaust pipe is connected to the side edge of the exhaust cavity and is communicated with the other end of the second exhaust cavity along the first direction; At least two exhaust through holes which are arranged on the first process pipe along the first direction and communicate the first exhaust cavity with the first process pipe; At least two exhaust communication pipes are arranged in the first exhaust chamber along the first direction, one end of each exhaust communication pipe is connected with the partition wall, and the other end of each exhaust communication pipe is connected with the first process pipe so as to communicate the second exhaust chamber with the first process pipe. The application is further configured such that the exhaust communication tube extends from the partition wall to an inner wall of the first process tube in a second direction within the first exhaust chamber, wherein the second direction is perpendicular to the first direction. The present application is further configured such that an end of the exhaust communication pipe remote from the partition wall is located in the exhaust through hole, and the exhaust communication pipe is disposed concentrically with the exhaust through hole. The present application is further configured such that the exhaust through holes and the exhaust communication pipes are staggered at equal intervals in the first direction. The present application is further configured such that the gas flow area of the exhaust through hole is the same as the gas flow area of the exhaust communication pipe. The application is further arranged that the exhaust pipe is positioned at the bottom end of the first process pipe, and one end of the first exhaust cavity, which is close to the exhaust pipe, is closed. The application is further arranged that one end of the partition wall, which is far away from the exhaust pipe in the first direction, forms a communication part with the exhaust cavity, and the communication part is used for communicating the first exhaust cavity and the second exhaust cavity. The application is further arranged that the process chamber comprises a second process pipe for accommodating the wafer boat, the second process pipe is nested in the first process pipe, an exhaust gap is formed between the second process pipe and the first process pipe, and the exhaust gap is communicated with the exhaust through hole and the exhaust communicating pipe. The application further provides that an exhaust slit is arranged on one side of the second process pipe facing the exhaust cavity, the exhaust slit extends along the first direction, and the vertical projection in the second direction covers the exhaust through hole and the exhaust communicating pipe. According to a second aspect, the technical scheme adopted is as follows: A semiconductor processing apparatus comprising a process chamber as claimed in the first aspect above. As described above, the process chamber of the present application comprises a first process