Search

CN-122013123-A - Phase change material based on S-doped Ge-Sb-Te system and preparation method and application thereof

CN122013123ACN 122013123 ACN122013123 ACN 122013123ACN-122013123-A

Abstract

The application belongs to the technical field of phase change materials, and particularly relates to a phase change material based on an S-doped Ge-Sb-Te system, and a preparation method and application thereof. The phase change material provided by the application comprises the components of Ge, sb, te and S, wherein the atomic percentage of S is 15% -27%, and the phase change material is prepared by gap doping of a Ge-Sb-Te system phase change material and an S-containing material. Compared with the Ge-Sb-Te phase-change material without doping S, the S is introduced to carry out gap doping, so that the optical band gap of the material is obviously increased, the material has low extinction coefficient and optical loss in a wide spectrum range of 380-160 nm, particularly in a visible light band, and high optical contrast is still maintained between crystalline state and amorphous state, the effective working band of the device is expanded from a communication band to a visible light-near infrared band coverage, and the application of the on-chip integrated photon device in the 380-160 nm band is hopeful.

Inventors

  • HE QIANG
  • QIU SHI
  • CHENG XIAOMIN
  • MIAO XIANGSHUI

Assignees

  • 华中科技大学

Dates

Publication Date
20260512
Application Date
20260129

Claims (10)

  1. 1. The phase change material based on the S-doped Ge-Sb-Te system comprises the components of Ge, sb, te and S, and is characterized in that the atomic percentage of S is 15% -27%, and the phase change material is prepared by gap doping of the Ge-Sb-Te system phase change material and S-containing materials.
  2. 2. The phase change material according to claim 1, wherein the Ge-Sb-Te based phase change material is Ge 4 Sb 6 Te 7 、Ge 2 Sb 2 Te 5 、Ge 1 Sb 2 Te 4 、Ge 1 Sb 4 Te 7 or Ge 2 Te 3 , and/or, The S-containing material is Sb 2 S 3 or GeS 2 .
  3. 3. The phase change material of claim 1, wherein the gap doping process is a physical vapor deposition or a chemical vapor deposition process.
  4. 4. The phase change material according to claim 3, wherein the physical vapor deposition is a magnetron co-sputtering method, an electron beam evaporation method or a pulsed laser deposition method, and/or, The chemical vapor deposition is a plasma enhanced chemical vapor deposition method or an atomic layer deposition method.
  5. 5. The phase change material according to any one of claims 1 to 4, wherein the phase change material based on the S-doped Ge-Sb-Te system is thin film-like with a thickness of 50nm to 500nm.
  6. 6. A method for preparing a phase change material according to any one of claims 1 to 5, wherein a magnetron co-sputtering process is adopted, and double targets co-sputtering is performed by taking the Ge-Sb-Te system phase change material as a first target and the S-containing material as a second target.
  7. 7. The method of claim 6, wherein the magnetron co-sputtering process comprises the steps of: s1, placing a substrate in a magnetron sputtering coating system, mounting the first target on a direct current sputtering target position, and mounting the second target on a radio frequency sputtering target position; S2, vacuumizing a sputtering chamber of the magnetron sputtering coating system, and then introducing sputtering gas to enable the air pressure in the sputtering chamber to reach the starting air pressure required by sputtering; s3, starting the first target to perform direct-current sputtering, starting the second target to perform radio-frequency sputtering, and depositing the phase-change material based on the S-doped Ge-Sb-Te system on the substrate.
  8. 8. The method according to claim 7, wherein in the step S2, the vacuum degree of the vacuumized air is not higher than 5×10 -4 Pa, and/or the glow starting air pressure is 0.5Pa to 2Pa.
  9. 9. The method according to claim 7, wherein in the step S3, the sputtering power of the first target is 70W-80W, and/or the sputtering power of the second target is 60W-80W.
  10. 10. A phase change optical switching device, characterized in that the phase change functional layer of the phase change optical switching device comprises the phase change material based on the S-doped Ge-Sb-Te system according to any one of claims 1 to 5.

Description

Phase change material based on S-doped Ge-Sb-Te system and preparation method and application thereof Technical Field The application belongs to the technical field of phase change materials, and particularly relates to a phase change material based on an S-doped Ge-Sb-Te system, and a preparation method and application thereof. Background With the development of integrated photonic devices, more and more phase change materials are used therein because they have optical contrast in crystalline and amorphous states and can be reversibly switched, and tunable photonic devices have been widely used in optical switches, reconfigurable optics, optical storage, and edge computing. In which a chalcogenide phase change compound typically undergoes a transformation of the octahedral crystal structure into the rhombohedral crystal structure upon crystalline to amorphous switching, the structural change resulting in different optical properties between crystalline and amorphous states. Gap between valence and conduction bandsThe larger E g, the shorter the cut-off wavelength, i.e. the shorter the light absorption wavelength, and the larger extinction coefficient k will also increase the optical loss. In the current phase-change device fabrication materials, ge 2Sb2Te5 (GST) is widely used, however, due to GSTE g=0.23±0.03eV,kc >3, which has extremely high loss in the visible light band, can only be applied to 1550nm band with small loss, so that the working bandwidth is extremely limited, and the limited bandwidth resource is further extruded. Disclosure of Invention Aiming at the defects of the prior art, the application aims to provide a phase change material based on an S-doped Ge-Sb-Te system, and a preparation method and application thereof, and aims to solve the problems that the optical band gap of the traditional Ge-Sb-Te system phase change material is narrow, the optical loss in the visible light band is high, the application of the traditional Ge-Sb-Te system phase change material in broadband photon integration is severely limited, and the like. In order to achieve the above purpose, in a first aspect, the application provides a phase change material based on an S-doped Ge-Sb-Te system, which comprises the components of Ge, sb, te and S, wherein the atomic percentage of S is 15% -27%, and the phase change material is prepared by gap doping of the Ge-Sb-Te system phase change material and an S-containing material. Preferably, the Ge-Sb-Te system phase change material is Ge4Sb6Te7、Ge2Sb2Te5、Ge1Sb2Te4、Ge1Sb4Te7 or Ge 2Te3. Preferably, the S-containing material is Sb 2S3 or GeS 2. Preferably, the gap doping process is a physical vapor deposition or chemical vapor deposition process. Preferably, the physical vapor deposition is a magnetron co-sputtering method, an electron beam evaporation method or a pulse laser deposition method. Preferably, the chemical vapor deposition is a plasma enhanced chemical vapor deposition method or an atomic layer deposition method. Preferably, the phase change material based on the S-doped Ge-Sb-Te system is in a film shape, and the thickness of the phase change material is 50 nm-500 nm. In a second aspect, the present application provides a method for preparing the phase change material, which uses a magnetron co-sputtering process to perform double-target co-sputtering by using the Ge-Sb-Te system phase change material as a first target and the S-containing material as a second target. Preferably, the magnetron co-sputtering process comprises the following steps: S1, placing a substrate in a magnetron sputtering coating system, mounting the first target on a direct current sputtering target position, and mounting the second target on a radio frequency sputtering target position; S2, vacuumizing a sputtering chamber of the magnetron sputtering coating system, and then introducing sputtering gas to enable the air pressure in the sputtering chamber to reach the starting air pressure required by sputtering; S3, starting the first target material to perform direct current sputtering, starting the second target material to perform radio frequency sputtering, and depositing the phase change material based on the S-doped Ge-Sb-Te system on the substrate. Preferably, in step S2, the vacuum degree of the vacuuming is not higher than 5×10 -4 Pa. Preferably, in step S2, the ignition air pressure is 0.5pa to 2pa. Preferably, in step S3, the sputtering power of the first target is 70w to 80w. Preferably, in step S3, the sputtering power of the second target is 60w to 80w. In a third aspect, the present application provides a phase change optical switching device, the phase change functional layer of which comprises the phase change material based on the S-doped Ge-Sb-Te system described above. In general, the above technical solutions conceived by the present application have mainly the following technical advantages compared with the prior art: (1) Compared with the S-undoped Ge-Sb-Te syste