CN-122013130-A - Layout design method of high-precision magnetron sputtering deposition equipment

CN122013130ACN 122013130 ACN122013130 ACN 122013130ACN-122013130-A

Abstract

The invention provides a layout design method of high-precision magnetron sputtering deposition equipment. Firstly, determining the layout parameters of a sputtering deposition subsystem such as revolution radius, target base distance, target length and the like according to the parameters of the element to be plated, the preliminary sputtering yield parameter of the target and the optimized target difference value of the film thickness, then evaluating whether the film thickness distribution under the layout parameters meets the optimized target difference value, and finally, calculating the layout parameters of the vacuum chamber subsystem such as the diameter, the height and the like of the vacuum chamber. The invention adopts a quantitative design mode, effectively solves the problems that the layout design of the existing magnetron sputtering deposition equipment depends on experience and is difficult to evaluate whether the existing magnetron sputtering deposition equipment meets the design index requirement, and improves the scientificity and rationality of the equipment layout.

Inventors

ZHU MEIPING
Du Wenyun
LI LINGHAO
LI JINGPING
XI YANG
SHAO JIANDA

Assignees

中国科学院上海光学精密机械研究所

Dates

Publication Date: 20260512
Application Date: 20260413

Claims (7)

1. The layout design method of the high-precision magnetron sputtering deposition equipment is characterized by comprising the following steps of: The first stage is to determine the layout parameters of a sputtering deposition subsystem: s1, according to parameters of elements to be plated, preliminary sputtering yield parameters of targets and optimized target difference values of film thickness, respectively calculating revolution radius, target base distance and target length by using an integration method, and affecting theoretical normalized film thickness of element edge points corresponding to each target and the target normalized film thickness difference values; S2, respectively determining an optimized revolution radius, an optimized target base distance and an optimized target length by taking a comprehensive difference value as an evaluation function, wherein the comprehensive difference value is obtained by carrying out weighted summation on the theoretical normalized film thickness corresponding to each target and the target normalized film thickness difference value and then taking an average; S3, under the optimization parameter combination determined in the step S2, evaluating whether the film thickness distribution meets the optimization target difference value by using an integration method, if so, entering the step S4, and if not, adjusting the optimization calculation range and re-executing the steps S1 to S2; and a second stage, determining the layout parameters of the subsystem of the vacuum chamber: S4, calculating the diameter of the vacuum chamber according to the optimized revolution radius, the radius of the target element to be plated and the radial additional adjustment space; S5, calculating the height of the vacuum chamber according to the optimized target base distance, the sputtering cathode height, the substrate tool height, the rotating mechanism height and the longitudinal additional adjustment space.
2. The layout design method of high-precision magnetron sputtering deposition equipment according to claim 1, wherein the step S1 specifically comprises the following steps: S1.1, establishing a film thickness distribution calculation model by utilizing an integration method, wherein the model is established based on a sputtering physical rule and is used for quantitatively correlating equipment structural parameters with film thickness distribution; S1.2, inputting element parameters, target preliminary sputtering yield parameters and optimization targets: The maximum diameter of the element to be plated is D Sub , the edge point target normalized film thickness normalized by taking the center point of the element to be plated as a reference is U T-edge,i , i is the number of targets, the number of targets is N, and the primary sputtering yield parameter of each target Is [ Rc, L, s 1 ,u,s 2 , m ], wherein Rc is the radius of a semicircular curve of a runway, L is the length of a straight track of the runway, s 1 is the standard deviation parameter of a Gaussian function of the cross section of the runway, U and s 2 are Gaussian function parameters of curve depth change, m is the material sputtering factor of a target material, and the optimal target difference value |DeltaU Target | of the theoretical normalized film thickness of an element edge point and the target normalized film thickness; S1.3, inputting initial calculation parameters: The method comprises the steps of rotating a shaft by revolution, wherein the radius R Rotation of the shaft by revolution, the initial target base distance DTS I , the initial target length LT I , the target width e, the initial revolution radius RR I and the initial revolution radius D Sub /2+R Rotation +D Gap ＜RR I ＜1.1×D Sub /2+R Rotation +D Gap are respectively equal to or less than 60 and equal to or less than 100, the initial target length DTS I and 0.9×D Sub ≤LT I ≤1.1×D Sub , and the initial revolution radius D Gap is a reserved gap, wherein the gap needs to consider the space occupied by the fixture and the gap between the fixture and the shaft by revolution; S1.4, respectively executing the following calculation on each target material to establish quantitative correspondence between each structural parameter and film thickness deviation: The optimal calculation range of the revolution radius RR is determined as the lower limit of the value D Sub /2+R Rotation +D Gap ≤RR≤k 1 ×D Sub +R Rotation +D Gap ;k 1 , the upper limit of the value k 1 is determined as the vacuum degree requirement of the equipment, k 1 is set as 0.5-0.9, the length of a fixed target material is LT I , the target base distance is DTS I , the thickness distribution calculation model is utilized to calculate the difference value between the theoretical normalized film thickness of the edge point of the element and the target normalized film thickness under different revolution radii RR in the optimal calculation range, and the difference value is recorded as ; The optimal calculation range of the target base distance DTS is determined as k 2 ≤DTS≤k 3 ;k 2 , the value range of k 2 ≥50;k 3 is determined according to the characteristics of magnetron sputtering deposition, k 3 is less than or equal to 160, the fixed target material length is LT I , the revolution radius is RR I , the film thickness distribution calculation model is utilized to calculate the difference value between the theoretical normalized film thickness of the element edge point and the target normalized film thickness under different target base distances DTS in the optimal calculation range, and the difference value is recorded as ; Determining the optimal calculation range of the target length LT as k 4 ×D Sub ≤LT≤k 5 ×D Sub ;k 4 , determining the value range of k 4 ≥0.7;k 5 according to the influence of the target working area on the film performance, setting k 5 less than or equal to 1.3 according to the vacuum degree requirement of the equipment, setting the fixed revolution radius as RR I and the target base distance as DTS I , calculating the difference value between the theoretical normalized film thickness of the element edge points and the target normalized film thickness under different target lengths LT in the optimal calculation range by using the film thickness distribution calculation model, and recording as 。
3. The layout design method of high-precision magnetron sputtering deposition equipment according to claim 2, wherein the step S2 specifically comprises the following steps: s2.1 setting the weight of each target And (2) and ; S2.2 calculating the comprehensive difference value under different revolution radiuses The formula is as follows: (1) s2.3 calculating the comprehensive difference value under different target base distances The formula is as follows: (2) S2.4 calculating comprehensive difference values under different target material lengths The formula is as follows: (3) S2.5 selecting the comprehensive difference value of revolution radius The RR value corresponding to the minimum value is used as an optimized revolution radius parameter RR Optimized ; selecting a target base distance integrated difference The DTS value corresponding to the minimum value is used as an optimized maximum target base distance parameter DTS Max ; Selecting a comprehensive difference value of target length The LT value corresponding to the minimum value is used as an optimized target length parameter LT Optimized .
4. The layout design method of high-precision magnetron sputtering deposition equipment according to claim 3, wherein the step S3 specifically comprises the following steps: S3.1, setting revolution radius as RR Optimized , target length as LT Optimized and target base distance as DTS Max , and calculating the difference value between the theoretical normalized film thickness of the element edge point corresponding to each target and the target normalized film thickness by using the film thickness distribution calculation model under the fixed layout parameters of the sputtering deposition subsystem The formula is as follows: (4) S3.2, evaluating the layout parameters of the sputtering deposition subsystem, namely judging that the layout parameters of the sputtering deposition subsystem meet the design requirements if the I delta U Optimized |≤|ΔU Target I is adopted, otherwise, judging that the layout parameters of the sputtering deposition subsystem do not meet the design requirements, adjusting the revolution radius, the target base distance and the value range of the target length, and re-optimizing the layout parameters of the sputtering deposition subsystem until the layout parameters meet the design requirements.
5. The layout design method of high-precision magnetron sputtering deposition equipment according to claim 1, wherein the specific steps of the step S4 are as follows: S4.1, inputting initial parameters of the vacuum chamber subsystem layout, wherein the radial additional adjustment space of the vacuum chamber is D AAP ; S4.2, calculating the diameter D V of the vacuum chamber according to the formula (5): D V =2×(RR Optimized +D Sub /2+D AAP )(5)。
6. the layout design method of high-precision magnetron sputtering deposition equipment according to claim 1, wherein the specific steps of the step S5 are as follows: S5.1, inputting initial parameters of the vacuum chamber subsystem layout, wherein the height of a sputtering cathode is H S , the height of a substrate tool is H H , the height of a rotating mechanism higher than the top part of the substrate tool is H R , and the longitudinal additional adjustment space of the vacuum chamber is H AAP ; S5.2, calculating the height H V of the vacuum chamber according to the formula (6): H V =DTS Max +H S +H H +H R +H AAP (6)。
7. the layout design method of high-precision magnetron sputtering deposition equipment according to claim 3, wherein, Weights of targets And determining according to the film thickness ratio corresponding to each target material in the target film system structure.

Description

Layout design method of high-precision magnetron sputtering deposition equipment Technical Field The invention belongs to the technical field of optical film deposition equipment, in particular to a layout design method of high-precision magnetron sputtering deposition equipment, which is particularly suitable for a design process of film plating equipment with extremely high requirements on film thickness uniformity and deposition precision. Background The magnetron sputtering technology has the unique advantages of higher energy of sputtered atoms, compact deposited film, smooth and flat film surface, stable and reliable sputtering rate and the like, and plays an extremely important role in the field of film preparation, so that the magnetron sputtering technology is widely and deeply applied. Taking a film element in an extreme ultraviolet lithography machine as an example, the technical field has strict requirements on the quality and performance of a film, the control precision of the transverse thickness of the film is required to reach the picometer level, and the magnetron sputtering technology can well meet the requirements. Along with the rapid development situation of nano technology and microelectronics, the requirements of the film preparation field on precision are increasing. The requirement of high precision is not only reflected in the performance index of the film itself, but also provides a more severe standard for the size and precision of the film deposition equipment. However, the traditional magnetron sputtering equipment has obvious short plates in terms of layout design, and lacks a scientific and systematic quantitative design method. When the equipment is in the face of upgrading and expanding from small equipment to large equipment, the determination of the equipment size often excessively depends on experience of designers, and an accurate theoretical basis and quantitative analysis are lacked. The empirical design method makes it difficult to accurately evaluate whether the designed coating equipment can truly meet the strict requirements of high-precision coating in practical application. In particular, in the case of preparing elements having a complicated shape or in the special case where a specific film thickness distribution is required, limitations of the conventional magnetron sputtering apparatus are more remarkable. Although in the subsequent process, the film thickness distribution can be regulated and controlled by adopting a series of measures such as changing the magnetic field distribution, regulating the revolution speed or using a correction baffle plate, the methods can only play an optimization role to a certain extent, cannot fundamentally ensure that the control requirement of high precision is met, and cannot meet the increasingly severe film preparation requirement. In view of the above, a method capable of precisely controlling the layout of magnetron sputtering deposition equipment is developed, and has important practical significance and wide application prospect for breaking through the technical bottleneck of the traditional equipment, remarkably reducing the process optimization difficulty and improving the film preparation quality, and meeting the urgent requirements of the fields of nano technology, microelectronics and the like on high-precision films. Disclosure of Invention The invention aims to overcome the defects of the prior art, and provides a layout design method of high-precision magnetron sputtering deposition equipment, which mainly comprises two main steps of determining the layout parameters of a sputtering deposition subsystem and determining the layout parameters of a vacuum chamber subsystem. The method aims to accurately determine key layout parameters of a sputtering deposition subsystem and a vacuum chamber subsystem in the magnetron sputtering deposition equipment through scientific and systematic quantitative design flow, thereby realizing high-precision control of film thickness distribution and meeting urgent requirements of fields such as nanotechnology, microelectronics and the like on high-precision film preparation. The technical scheme of the invention is as follows: The layout design method of the high-precision magnetron sputtering deposition equipment is characterized by comprising the following steps of: The first stage is to determine the layout parameters of a sputtering deposition subsystem: s1, according to parameters of elements to be plated, preliminary sputtering yield parameters of targets and optimized target difference values of film thickness, respectively calculating revolution radius, target base distance and target length by using an integration method, and affecting theoretical normalized film thickness of element edge points corresponding to each target and the target normalized film thickness difference values; S2, respectively determining an optimized revolution radius, an optimized target base d