CN-122013131-A - Ion beam sputtering method, device, system and electronic equipment

CN122013131ACN 122013131 ACN122013131 ACN 122013131ACN-122013131-A

Abstract

The disclosure provides an ion beam sputtering method, an ion beam sputtering device, an ion beam sputtering system and electronic equipment. The method comprises the steps of applying different target bias voltages to a plurality of targets which are fixedly arranged, enabling sputtering or non-sputtering to occur on the surfaces of the targets, emitting ion beams to the targets with the sputtering surface energy, and performing ion beam sputtering deposition. The method solves the technical problems that the prior ion beam sputtering deposition method generally depends on a mechanical movable structure to realize the selection and switching of ion beam sputtering targets, and particle pollution, air release and lubrication residues are easy to introduce in a high-cleanness and low-defect coating scene, so that the reliability and long-term stability of a system are obviously reduced.

Inventors

HUANG YUXIANG
LIU XIAOFENG
Zhou Qianmen
JI MING
LIU WEIJI

Assignees

佛山市博顿光电科技有限公司
中山市博顿光电科技有限公司

Dates

Publication Date: 20260512
Application Date: 20260324

Claims (10)

1. An ion beam sputtering method, comprising: Applying different target bias voltages to a plurality of targets which are fixedly arranged so as to enable sputtering or non-sputtering to occur on the surfaces of the targets; and emitting an ion beam to a target material with the surface energy being sputtered, and performing ion beam sputtering deposition.
2. The method of claim 1, wherein applying different target bias voltages to a plurality of targets in a fixed arrangement comprises: Applying a negative bias voltage to a target material in the plurality of target materials, wherein the negative bias voltage is used for enabling the surface of the target material to form an ion sheath layer; applying a positive bias voltage or a zero bias voltage to targets other than the target among the plurality of targets.
3. The method of claim 2, wherein applying a negative bias voltage to a target of the plurality of targets comprises at least one of: applying a negative DC bias voltage to the target; applying a unipolar negative pulse bias voltage to the target; And applying bipolar pulse bias voltage or three-stage pulse bias voltage to the target material, wherein negative pulse bias voltage in the bipolar pulse bias voltage or the three-stage pulse bias voltage is used for performing ion beam sputtering, and positive pulse bias voltage in the bipolar pulse bias voltage or the three-stage pulse bias voltage is used for neutralizing charges on the surface of the target material.
4. A method according to any one of claims 1 to 3, wherein the emitting an ion beam towards a target whose surface is sputter-able, the ion beam sputter deposition comprising: Step S1, setting the sequence number of the target material as , An integer greater than or equal to 1, and making the current index ; Step S2, to the first Individual targets Emitting an ion beam, performing the first step Individual targets Ion beam sputter deposition of (2); Step S3, when the first step Individual targets Upon completion of ion beam sputter deposition, the ion beam sputter deposition is applied to the first electrode The negative bias voltage of each target is switched to positive bias voltage or zero bias voltage, and the negative bias voltage is applied to the first target Individual targets Switching the positive bias voltage or the zero bias voltage of (a) to the negative bias voltage; And step S4, if i < n, making i=i+1, repeating the steps S2 to S3, wherein n is the number of the targets.
5. The method of claim 1, wherein, under conditions in which at least two targets are disposed side-by-side, the method further comprises: the bias duty cycle of a first target of the at least two targets is gradually reduced, and the bias duty cycle of a second target of the at least two targets is gradually increased.
6. The method of claim 5, wherein, under conditions in which at least two targets are disposed side-by-side, the method further comprises at least one of: adjusting the magnitude of a target bias voltage applied to the at least two targets; the feed gas is continuously adjusted during single target sputtering.
7. An ion beam sputtering system, comprising: a chamber for providing a low pressure deposition environment; the ion source assembly is arranged in the cavity and is used for generating an ion beam; the targets are arranged in the cavity in parallel and are used for performing ion beam sputtering; the target bias power supply assembly is arranged in the cavity, connected with the target and used for outputting target bias voltage; the substrate table assembly is arranged in the cavity and is used for placing a substrate to be plated; A controller coupled to the ion source assembly and the target bias power assembly, respectively, for performing the method of any one of claims 1 to 6.
8. An ion beam sputtering apparatus, comprising: the processing module is used for applying different target bias voltages to a plurality of targets which are fixedly arranged so as to enable sputtering or non-sputtering to occur on the surfaces of the targets; and the emission module is used for emitting ion beams to targets with sputtering surface energy and performing ion beam sputtering deposition.
9. An electronic device comprising a memory, a processor and a computer program stored on the memory, characterized in that the processor executes the computer program to implement the method of any one of claims 1 to 6.
10. A computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the method of any one of claims 1 to 6.

Description

Ion beam sputtering method, device, system and electronic equipment Technical Field The disclosure relates to the technical field of ion beam sputtering coating, in particular to an ion beam sputtering method, an ion beam sputtering device, an ion beam sputtering system and electronic equipment. Background When the existing ion beam sputter deposition (Ion Beam Sputtering, IBS) and its derivative process realize multi-target material switching or multi-component film deposition, a mechanically movable structure (such as a rotating shaft, a moving target, a mechanical shutter or a shielding mask) is generally relied on to change the sputtered target material or material flux path, and the structure is easy to introduce particle pollution, gassing and lubrication residues in a high-cleanliness and low-defect coating scene, and obviously reduces the reliability and long-term stability of the system. Disclosure of Invention The embodiment of the disclosure provides an ion beam sputtering method, an ion beam sputtering device, an ion beam sputtering system and an ion beam sputtering electronic device, which are used for solving the technical problems that the existing ion beam sputtering deposition method generally depends on a mechanical movable structure to realize ion beam sputtering target material selection and switching, and particle pollution, air release and lubrication residues are easy to introduce in a high-cleanliness and low-defect coating scene, so that the reliability and long-term stability of the system are obviously reduced. According to one aspect of the disclosed embodiments, there is provided an ion beam sputtering method comprising applying different target bias voltages to a plurality of targets in a fixed arrangement to cause sputtering or non-sputtering of the target surface, and emitting an ion beam toward the target whose surface energy is sputtered to effect ion beam sputter deposition. Alternatively, applying different target bias voltages to a plurality of targets in a fixed arrangement includes applying a negative bias voltage to a target of the plurality of targets, the negative bias voltage being used to form an ion sheath on a surface of the target, and applying a positive bias voltage or a zero bias voltage to targets of the plurality of targets other than the target. Optionally, applying a negative bias voltage to a target of the plurality of targets includes at least one of applying a negative DC bias voltage to the target, applying a unipolar negative pulse bias voltage to the target, applying a bipolar pulse bias voltage or a tertiary pulse bias voltage to the target, the negative pulse bias voltage of the bipolar pulse bias voltage or the tertiary pulse bias voltage being used for ion beam sputtering, and the positive pulse bias voltage of the bipolar pulse bias voltage or the tertiary pulse bias voltage being used for neutralizing charges on the surface of the target. Optionally, emitting an ion beam to a target material with surface energy being sputtered, performing ion beam sputtering deposition, including: Step S1, setting the sequence number of the target material as ,An integer greater than or equal to 1, and making the current index; Step S2, to the firstIndividual targetsEmitting an ion beam, performingIndividual targetsIon beam sputter deposition of (2); step S3, when the first Individual targetsWhen ion beam sputter deposition is completed, the ion beam sputter deposition is applied to the first layerThe negative bias voltage of each target is switched to positive bias voltage or zero bias voltage and is applied to the first targetIndividual targetsSwitching the positive bias voltage or the zero bias voltage of (a) to the negative bias voltage; step S4, if i < n, let i=i+1, repeat steps S2 to S3, where n is the number of targets. Optionally, the method further comprises gradually decreasing the bias duty cycle of a first target of the at least two targets and gradually increasing the bias duty cycle of a second target of the at least two targets, under the condition that the at least two targets are arranged side by side. Optionally, the method further comprises at least one of adjusting the magnitude of the target bias voltage applied to the at least two targets, and continuously adjusting the feed gas in single target sputtering, under conditions where the at least two targets are juxtaposed. According to another aspect of an embodiment of the present disclosure, there is provided an ion beam sputtering system including a chamber for providing a low pressure deposition environment, an ion source assembly disposed inside the chamber for generating an ion beam, a plurality of targets disposed in parallel inside the chamber for performing ion beam sputtering, a target bias power assembly disposed inside the chamber and connected with the targets for outputting a target bias voltage, a substrate stage assembly disposed inside the chamber for placing a substrate to