CN-122013138-A - High temperature resistant device and method for manufacturing same

Abstract

The invention provides a high temperature resistant device and a manufacturing method thereof. The manufacturing method of the high temperature resistant device comprises the steps of providing a tantalum substrate as a device body, carrying out oxidation treatment on the tantalum substrate in an oxygen-containing environment to enable a tantalum oxide layer to be generated on the surface of the tantalum substrate, then burying the tantalum substrate subjected to oxidation treatment in a carbon-containing substance, and carrying out carbonization reaction in inert gas to enable the tantalum oxide layer to be converted into a tantalum carbide layer. The temperature of the oxidation treatment is between 100 ℃ and 1100 ℃.

Inventors

• XU YUXIANG
• WENG XUEPING

Assignees

• 财团法人工业技术研究院

Dates

Publication Date

20260512

Application Date

20241127

Priority Date

20241112

Claims (12)

1. 1. A method of manufacturing a high temperature resistant device, comprising: Providing a tantalum substrate as a device body; Oxidizing the tantalum substrate in an oxygen-containing environment to form a tantalum oxide layer on the surface of the tantalum substrate, wherein the temperature of the oxidation treatment is between 100 ℃ and 1100 ℃, and Burying the tantalum substrate after the oxidation treatment in a carbonaceous substance, and performing carbonization reaction in inert gas to convert the tantalum oxide layer into a tantalum carbide layer.
2. 2. The method of claim 1, wherein the oxygen-containing environment comprises oxygen, water vapor, an inert gas, or a combination thereof.
3. 3. The method for manufacturing a high temperature resistant device according to claim 1, wherein the pressure of the oxidation treatment is normal pressure.
4. 4. The method of manufacturing a high temperature resistant device according to claim 1, wherein the time of the oxidation treatment is between 15 minutes and 120 minutes.
5. 5. The method of claim 1, wherein the tantalum carbide layer is represented by a chemical formula Ta x O y , wherein y/x is between 0.5 and 2.5.
6. 6. The method of claim 1, wherein the inert gas comprises argon, helium, or a combination thereof.
7. 7. The method according to claim 1, wherein the carbonization reaction is performed at normal pressure, at a reaction temperature of between 1500 ℃ and 2100 ℃ and for a reaction time of between 15 minutes and 2 hours.
8. 8. The method of claim 1, wherein the carbonaceous material comprises carbon powder, graphite powder, activated carbon, polyvinyl alcohol, polyvinyl butyral, sucrose, glucose, or a combination thereof.
9. 9. The method of manufacturing a high temperature resistant apparatus according to claim 1, further comprising removing carbon after the carbonization reaction.
10. 10. A high temperature resistant apparatus, comprising: Tantalum base material, and A tantalum carbide layer formed on the surface of the tantalum base material, wherein The tantalum carbide layer has a thickness of between 2 μm and 100 μm.
11. 11. The high temperature resistant device of claim 10, wherein the tantalum carbide layer has a specific surface area of between 0.1cm 2 /g and 2cm 2 /g.
12. 12. The high temperature resistant apparatus of claim 10, wherein the high temperature resistant apparatus comprises a crucible, a aerospace mechanism fitting, a high temperature reaction vessel fitting, or a crystal growth fitting.

Description

High temperature resistant device and method for manufacturing same Technical Field The invention relates to a high temperature resistant device, and relates to a high temperature resistant device suitable for growing high-purity semi-insulating silicon carbide powder and a manufacturing method thereof. Background Silicon carbide (SiC) has excellent physical and chemical properties and is suitable for use in semiconductor processes, wireless communication and power module related industries, but the process of manufacturing SiC single crystal requires high temperatures of 1800 ℃ or higher, and hydrogen (H 2), argon (Ar), ammonia (NH 3), hydrocarbon compounds, and the like, are used as carrier gases. Since Si 2N4 is generated by the reaction of ammonia, siC on a carbon substrate is easily corroded, cracked or peeled off after gasification reaction at a high temperature of 1500 ℃. In order to reduce the grown crystal or epitaxial defect, a tantalum carbide (TaC) coating is generally formed by plating tantalum carbide (TaC) on a graphite crucible as a protective layer, and a highly densely crystallized TaC coating is obtained by a Chemical Vapor Deposition (CVD) method. However, taC crystals produced by the CVD method have low flexibility because they grow only in a specific direction. This also causes rapid corrosion of the carbon substrate by NH 3、H2 or the like in the carrier gas when the TaC-plated graphite crucible is subjected to thermal shock and cracked or peeled off. Disclosure of Invention The invention aims at a high temperature resistant device and a manufacturing method thereof, and tantalum carbide which is high temperature resistant and is not easy to fall off can be manufactured under normal pressure to be used as a surface protection layer of the high temperature resistant device. According to an embodiment of the invention, a method for manufacturing a high temperature resistant device includes providing a tantalum substrate as a device body, oxidizing the tantalum substrate in an oxygen-containing environment to form a tantalum oxide layer on the surface of the tantalum substrate, burying the oxidized tantalum substrate in a carbon-containing substance at a temperature between 100 ℃ and 1100 ℃, and performing carbonization reaction in an inert gas to convert the tantalum oxide layer into a tantalum carbide layer. In an embodiment of the present invention, the oxygen-containing environment includes oxygen, water vapor, inert gas, or a combination of the foregoing. In an embodiment of the invention, the pressure of the oxidation treatment is normal pressure. In an embodiment of the invention, the time of the oxidation treatment is between 15 minutes and 120 minutes. In an embodiment of the invention, the tantalum oxide layer is represented by a chemical formula Ta xOy, where y/x is between 0.5 and 2.5. In an embodiment of the present invention, the inert gas includes argon, helium, or a combination thereof. In an embodiment of the invention, the pressure of the carbonization reaction is normal pressure, the reaction temperature is between 1500 ℃ and 2100 ℃, and the reaction time is between 15 minutes and 2 hours. In one embodiment of the present invention, the carbonaceous material comprises carbon powder, graphite powder, activated carbon, polyvinyl alcohol (PVA), polyvinyl butyral (PVB), sucrose, glucose, or a combination of the foregoing. In an embodiment of the present invention, after the carbonization reaction, carbon removal may be further included. According to another embodiment of the present invention, a high temperature resistant device includes a tantalum substrate and a tantalum carbide layer. The tantalum carbide layer is a layer formed on the surface of the tantalum substrate, wherein the thickness of the tantalum carbide layer is between 2 and 100 mu m. In another embodiment of the present invention, the specific surface area of the tantalum carbide layer is between 0.1cm 2/g and 2cm 2/g. In another embodiment of the present invention, the refractory device includes a crucible, an aerospace mechanism assembly, a high temperature reaction vessel assembly, or a crystal growth assembly. Based on the above, the tantalum substrate is manufactured into the device for high temperature by a method of generating TaC from carbon in-situ reaction in an atmosphere furnace in a high-temperature thermal reaction mode, so that the device has the advantages of simple process, environmental protection, no toxicity, adjustable film thickness, high uniformity, high densification of a film layer, high reuse rate and the like, and can also solve the problem of coating spalling caused by the traditional TaC coating mode. Drawings FIG. 1 is a step diagram of a manufacturing flow of a high temperature resistant device according to an embodiment of the present invention; FIG. 2A is a schematic diagram of an oxidation process of step 110 of FIG. 1; FIG. 2B is a schematic diagram of the carbonization re