CN-122013141-A - Vapor deposition equipment and thin film photovoltaic cell

Abstract

The application provides vapor deposition equipment and a thin film photovoltaic cell, and relates to the technical field of thin film preparation. In vapor deposition equipment, the gas delivery unit includes communicating air inlet and gas outlet, and the air inlet is used for receiving the carrier gas. The gasification unit outputs raw material gas through a steam port. The distribution unit comprises a containing cavity and a containing opening, wherein the containing cavity is communicated with the air outlet, the steam port and the containing opening, so that the carrier gas carries raw material gas to flow to the containing opening. The inner cavity of the deposition unit is communicated with the accommodating opening. The air inlet is arranged at two sides of the air delivery unit in the length direction of the air delivery unit, and the air outlet is arranged at one side of the air delivery unit in the direction perpendicular to the length direction of the air delivery unit. The temperature of the carrier gas is decoupled from the heating temperature of the gasification unit, so that the morphology of the film is convenient to regulate and control, the uniformity of the carrier gas carrying the raw material gas flowing out of the accommodating opening is improved, and the uniformity of the film is improved.

Inventors

• WANG SHUO
• ZHONG TIAN
• LIU DETAO
• BI KUN
• PENG YONG
• LIU YUNFENG
• HUANG BONING

Assignees

• 华为技术有限公司

Dates

Publication Date

20260512

Application Date

20260114

Claims (16)

1. 1. The vapor deposition equipment is characterized by comprising a gas transmission unit, a gasification unit, a distribution unit and a deposition unit, wherein the gas transmission unit comprises a gas inlet and a gas outlet, the gas inlet is used for receiving carrier gas, the gas outlet is communicated with the gas inlet, the gasification unit comprises a steam port, the steam port is used for outputting raw material gas, the distribution unit comprises a containing cavity and a containing opening, the containing cavity is communicated with the containing opening, the steam port and the gas outlet, so that the carrier gas carries the raw material gas to flow to the containing opening, and an inner cavity of the deposition unit is communicated with the containing opening; The air inlet is arranged on two sides of the air delivery unit in the length direction of the air delivery unit, and the air outlet is arranged on one side of the air delivery unit in the direction perpendicular to the length direction of the air delivery unit.
2. 2. The vapor deposition apparatus according to claim 1, wherein the number of the air outlets is plural, and the plural air outlets are sequentially equidistantly arranged in the length direction of the air delivery unit.
3. 3. The vapor deposition apparatus according to claim 1 or 2, wherein a distance between an air inlet provided at one side of the air delivery unit and the air outlet and a distance between an air inlet provided at the other side of the air delivery unit and the air outlet are equal in a length direction of the air delivery unit.
4. 4. A vapor deposition apparatus according to any one of claims 1 to 3, wherein the gas delivery unit is partially disposed in the housing chamber along a longitudinal direction of the gas delivery unit, the gas inlet is exposed to the outside of the housing chamber, and the longitudinal direction of the gas delivery unit is parallel to the longitudinal direction of the housing opening.
5. 5. The vapor deposition apparatus according to claim 4, wherein the vapor port communicates with a portion of the housing chamber between the gas delivery unit and the housing opening.
6. 6. The vapor deposition apparatus according to claim 5, wherein the length direction of the vapor port is parallel to the length direction of the gas delivery unit, the gas outlet is located on one side of the vapor port in the depth direction of the vapor port, and the gas outlet is located on one side of the vapor port in the width direction of the vapor port.
7. 7. The vapor deposition apparatus according to claim 5 or 6, wherein the vaporizing unit is housed in the housing chamber and is located between the gas delivery unit and the housing opening.
8. 8. The vapor deposition apparatus of claim 7, wherein the housing chamber comprises a housing subchamber and a flow channel, the vaporizing unit and the gas delivery unit are housed in the housing subchamber, the flow channel comprises a first port and a second port, the first port is in communication with the housing subchamber, the second port is in communication with the housing opening, and the cross-sectional area of the first port is greater than the cross-sectional area of the second port.
9. 9. The vapor deposition apparatus according to any one of claims 5 to 8, wherein the gas delivery unit includes a first sub gas delivery unit and a second sub gas delivery unit, the first sub gas delivery unit and the second sub gas delivery unit are sequentially disposed on one side of the gasification unit in a depth direction of the vapor port, the gas outlet includes a first sub gas outlet and a second sub gas outlet, the first sub gas outlet is disposed in the first sub gas delivery unit, and the second sub gas outlet is disposed in the second sub gas delivery unit; The air inlet comprises a first sub air inlet and a second sub air inlet, the first sub air inlet is arranged on one side of the first sub air inlet in the length direction of the air conveying unit, and the second sub air inlet is arranged on one side, opposite to the first sub air inlet, of the second sub air inlet.
10. 10. The vapor deposition apparatus according to claim 9, wherein in a direction in which the second sub-gas outlet is directed toward the vapor port in a width direction of the vapor port, a distance between an axis of the second sub-gas outlet and the vapor port in a depth direction of the vapor port gradually decreases.
11. 11. The vapor deposition apparatus according to claim 4, wherein the gas delivery unit further comprises a gas delivery chamber through which the gas inlet communicates with the gas outlet, and a portion of the gas delivery chamber located between the gas inlet and the gas outlet communicates with the vapor port in a length direction of the gas delivery unit.
12. 12. The vapor deposition apparatus of claim 11, wherein the vaporization unit is located outside of the receiving chamber.
13. 13. The vapor deposition apparatus according to claim 11 or 12, wherein the gas delivery unit includes a first sub gas delivery unit and a second sub gas delivery unit, the first sub gas delivery unit and the second sub gas delivery unit are disposed on both sides of the housing opening in a width direction of the housing opening, the gas outlet includes a first sub gas outlet and a second sub gas outlet, the first sub gas outlet is disposed on the first sub gas delivery unit, and the second sub gas outlet is disposed on the second sub gas delivery unit; The air inlet comprises a first sub air inlet and a second sub air inlet, the first sub air inlet is arranged on one side of the first sub air inlet in the length direction of the air conveying unit, the second sub air inlet is arranged on one side, opposite to the first sub air inlet, of the second sub air inlet, the number of the air conveying cavities is multiple, the first sub air inlet is communicated with the first sub air outlet through one air conveying cavity, and the second sub air inlet is communicated with the second sub air outlet through the other air conveying cavity.
14. 14. The vapor deposition apparatus according to claim 13, wherein the first sub-gas outlets are oriented toward the housing opening, and a depth direction of the first sub-gas outlets is disposed obliquely with respect to a width direction of the housing opening.
15. 15. The vapor deposition apparatus according to any one of claims 11 to 14, wherein the gas inlet includes a first sub-gas inlet and a second sub-gas inlet, the first sub-gas inlet and the second sub-gas inlet are provided on both sides of the gas delivery unit in a length direction of the gas delivery unit, the number of the gasification units is plural, a portion of the gas delivery chamber located between the first sub-gas inlet and the gas outlet is communicated with a vapor port of one of the gasification units in the length direction of the gas delivery unit, and a portion of the gas delivery chamber located between the second sub-gas inlet and the gas outlet is communicated with a vapor port of the other of the gasification units.
16. 16. A thin-film photovoltaic cell, characterized in that the thin-film photovoltaic cell comprises a transparent electrode, a first transmission layer, a light absorption layer, a second transmission layer and a back electrode which are sequentially arranged, one of the first transmission layer and the second transmission layer is an electron transmission layer, the other is a hole transmission layer, and at least one of the light absorption layer, the electron transmission layer and the back electrode is manufactured by the vapor deposition device according to any one of claims 1 to 15.

Description

Vapor deposition equipment and thin film photovoltaic cell Technical Field The application relates to the technical field of film preparation, in particular to vapor deposition equipment and a film photovoltaic cell. Background In thin-film photovoltaic cells, the light-absorbing layer is used for photoelectric conversion, and the quality of the light-absorbing layer determines the photoelectric performance of the thin-film photovoltaic cell. In the processing process of the light absorption layer, a film needs to be prepared through vapor deposition equipment, and the appearance of the film influences the quality of the light absorption layer. In the existing vapor deposition apparatus, a carrier gas is introduced into a vaporizing unit containing a raw material, and the vaporizing unit can heat the raw material to vaporize the raw material to form a raw material gas, which flows along with the carrier gas toward a substrate and is deposited on the substrate to form a thin film. However, since the raw materials and the carrier gas are heated together, the temperature of the carrier gas is coupled with the heating temperature of the gasification unit, and the gasification efficiency of the raw materials and the temperature of the carrier gas are changed at the same time by adjusting the heating temperature of the gasification unit, the morphology of the film is difficult to finely adjust and control. Disclosure of Invention The application provides vapor deposition equipment and a thin film photovoltaic cell, and aims to solve the technical problem that the morphology of a thin film prepared by the vapor deposition equipment is difficult to finely regulate and control. In a first aspect, embodiments of the present application provide a vapor deposition apparatus. The vapor deposition equipment comprises a gas transmission unit, a gasification unit, a distribution unit and a deposition unit. The gas transmission unit comprises a gas inlet and a gas outlet, the gas inlet is used for receiving carrier gas, and the gas outlet is communicated with the gas inlet. The gasification unit includes a steam port for outputting raw material gas. The distribution unit comprises a containing cavity and a containing opening, wherein the containing cavity is communicated with the containing opening, the steam port and the air outlet, so that the carrier gas carries raw material gas to flow to the containing opening, and the inner cavity of the deposition unit is communicated with the containing opening. The air inlet is arranged at two sides of the air delivery unit in the length direction of the air delivery unit, and the air outlet is arranged at one side of the air delivery unit in the direction perpendicular to the length direction of the air delivery unit. The vapor deposition equipment provided by the embodiment of the application can be used for forming a film on a substrate. Wherein, the substrate is accommodated in the inner cavity of the deposition unit. The gas transmission unit can receive the carrier gas through the gas inlet, and the carrier gas can flow into the accommodating cavity from the gas outlet. The gasification unit can heat the raw material, so that the raw material is gasified and raw material gas is formed, and the raw material gas flows into the accommodating cavity from the steam port. The holding cavity is communicated with the holding opening, the steam port and the air outlet, so that the carrier gas carries raw material gas to flow to the holding opening, and in the process that the carrier gas flows to the holding opening from the air inlet through the air outlet and the holding cavity, the carrier gas can flow to the raw material gas and is uniformly mixed with the raw material gas, and the raw material gas can flow to the substrate in the deposition unit along with the carrier gas from the holding opening, so that a film is formed on the substrate. The temperature of the carrier gas is not influenced by the heating temperature of the gasification unit, so that decoupling of the temperature of the carrier gas and the heating temperature of the gasification unit is realized, the heating temperature of the gasification unit can be adjusted, the output efficiency of raw material gas from the steam port can be adjusted, the deposition efficiency of the raw material gas on the substrate can be further adjusted, and the temperature environment when the carrier gas carries the raw material gas to flow to the substrate in the deposition unit can be adjusted by adjusting the temperature of the carrier gas output from the gas outlet, so that fine regulation and control of the morphology of the film can be realized. The carrier gas drives the raw material gas, so that the pressure of the space around the steam port is reduced, the efficiency of the raw material gas overflowing from the steam port is improved, the raw material can be continuously and rapidly gasified under the heating of the gasificat