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CN-122013148-A - Gas shower head, control method thereof and semiconductor device

CN122013148ACN 122013148 ACN122013148 ACN 122013148ACN-122013148-A

Abstract

The present disclosure relates to a gas shower head for a semiconductor device, and a method of controlling the same, and a semiconductor device, the gas shower head including at least two shower areas, each shower area including a plurality of spouts. The gas spray head comprises spray parameters capable of controlling different spray areas to ensure the uniformity of integral film formation or obtain different thicknesses according to actual requirements.

Inventors

  • WU YIYU

Assignees

  • 成都新紫光半导体科技有限公司

Dates

Publication Date
20260512
Application Date
20241101

Claims (10)

  1. 1. A gas shower head, wherein the gas shower head comprises at least two spray zones, each spray zone comprising a plurality of spray orifices.
  2. 2. The gas shower of claim 1, wherein the gas shower includes a first spray zone having a plurality of first spray orifices and a second spray zone having a plurality of second spray orifices, and wherein the second spray zone is circumferentially disposed about the first spray zone.
  3. 3. The gas shower of claim 2, wherein the first spray zone is circular and the second spray zone is annular surrounding the first spray zone.
  4. 4. A gas shower head according to claim 3, wherein the centre of the first spray zone, the centre of the second spray zone and the centre of the gas shower head coincide.
  5. 5. A gas shower head according to any one of claims 2 to 4, wherein the diameter of the first nozzle is smaller than the diameter of the second nozzle, or The density of the first spray nozzles in the first spray zone is less than the density of the second spray nozzles in the second spray zone.
  6. 6. The gas shower of claim 2, further comprising at least one third spray zone having a plurality of third spray orifices, the third spray zone being located between the first spray zone and the second spray zone.
  7. 7. The gas shower in accordance with claim 6, wherein the diameter of the third nozzle is larger than the diameter of the first nozzle and smaller than the diameter of the second nozzle, or The density of the third jets in the third spray zone is greater than the density of the first jets in the first spray zone and less than the density of the second jets in the second spray zone.
  8. 8. A method of controlling a gas shower, characterized in that it is based on a gas shower as defined in any one of claims 1-7, the method comprising: controlling a spraying area of the gas spray head to spray by using the first spraying parameters; controlling the other spraying area of the gas spray head to spray by using the second spraying parameters; wherein the first spray parameters are different from the second spray parameters.
  9. 9. The method of claim 8, wherein the first and second spray parameters comprise at least one of a gas flow rate, a gas pressure, and a gas concentration.
  10. 10. A semiconductor device comprising the gas shower head of any one of claims 1-7.

Description

Gas shower head, control method thereof and semiconductor device Technical Field The disclosure relates to the technical field of semiconductor equipment, in particular to a gas shower head, a control method thereof and semiconductor equipment. Background Showcase plays a critical role in the semiconductor manufacturing process. The gas is uniformly sprayed into the reaction cavity through the nozzle of the gas spraying nozzle, so that the uniformity of gas distribution is ensured, for example, in the PECVD (plasma enhanced chemical vapor deposition) process, the gas sprayed by the nozzle of the gas spraying nozzle can be deposited to form a film on the surface of a wafer. In the related art, since the nozzles on the gas nozzle are uniformly distributed, after film formation, the thickness of the wafer near the center area of the gas nozzle is greater than the thickness near the edge area of the gas nozzle, resulting in uneven overall thickness of the film. Disclosure of Invention The gas spray head comprises at least two spray areas, and can ensure the uniformity of integral film formation or obtain different thicknesses according to actual requirements by controlling spray parameters of different spray areas. To achieve the above object, according to a first aspect of the present disclosure, there is provided a gas shower head comprising at least two shower areas, each of the shower areas comprising a plurality of spouts. Optionally, the gas shower head includes a first spraying area with a plurality of first spouts and a second spraying area with a plurality of second spouts, and the second spraying area is enclosed in the circumference of the first spraying area. Optionally, the first spraying area is circular, and the second spraying area is annular surrounding the first spraying area. Optionally, the center of the first spraying area, the center of the second spraying area and the center of the gas spray head coincide. Optionally, the diameter of the first nozzle is smaller than the diameter of the second nozzle, or The density of the first spray nozzles in the first spray zone is less than the density of the second spray nozzles in the second spray zone. Optionally, the gas shower further comprises at least one third spray zone having a plurality of third spray orifices, the third spray zone being located between the first spray zone and the second spray zone. Optionally, the diameter of the third nozzle is larger than the diameter of the first nozzle and smaller than the diameter of the second nozzle, or The density of the third jets in the third spray zone is greater than the density of the first jets in the first spray zone and less than the density of the second jets in the second spray zone. According to a second aspect of the present disclosure, there is provided a control method of a gas shower head, based on the above gas shower head, the method comprising: controlling a spraying area of the gas spray head to spray by using the first spraying parameters; controlling the other spraying area of the gas spray head to spray by using the second spraying parameters; wherein the first spray parameters are different from the second spray parameters. Optionally, the first and second spray parameters include at least one of gas flow, gas pressure, and gas concentration. According to a third aspect of the present disclosure, there is also provided a semiconductor device, the gas shower head described above. Through above-mentioned technical scheme, the gas shower head of this disclosure promptly, including two at least spray areas, and every spray area includes a plurality of spouts, when in actual use, can adopt different spray parameters to control to every spray area, for example, can control every gas flow, gas pressure or the gas concentration who sprays the area for the thickness of every spray area can be relatively even, or to the thickness requirement of every spray area and adjust the spray parameters, in order to obtain different thickness. The gas nozzle has the advantages that at least two spraying areas are arranged, so that the uniformity of integral film forming can be ensured by controlling the spraying parameters of different spraying areas, or different thicknesses can be obtained according to actual requirements. Additional features and advantages of the present disclosure will be set forth in the detailed description which follows. Drawings The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification, illustrate the disclosure and together with the description serve to explain, but do not limit the disclosure. In the drawings: FIG. 1 is a schematic view of a structure of a related art gas shower; FIG. 2 is a cross-sectional view of a film thickness formed based on the gas shower of FIG. 1; FIG. 3 is a film thickness simulation graph based on the gas shower simulation analysis in FIG.