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CN-122013149-A - Thin film preparation method, thin film transistor and preparation method thereof

CN122013149ACN 122013149 ACN122013149 ACN 122013149ACN-122013149-A

Abstract

The application discloses a thin film preparation method, a thin film transistor and a preparation method thereof. A method for preparing a metal oxide semiconductor thin film, wherein the method includes performing a plurality of deposition cycles to form a metal oxide semiconductor thin film of a desired thickness on an interface region, wherein performing one deposition cycle includes depositing a metal precursor using an atomic layer deposition technique and oxidizing the metal precursor, and repairing an interface defect in the metal oxide semiconductor thin film using a sulfur-containing reactant in at least one deposition cycle of the plurality of deposition cycles.

Inventors

  • ZHANG PANTING
  • ZHAO ZEKUN
  • LI DONGDONG

Assignees

  • 张江国家实验室

Dates

Publication Date
20260512
Application Date
20241104

Claims (16)

  1. 1. A method for producing a metal oxide semiconductor thin film, characterized by comprising: Performing a plurality of deposition cycles to form a metal oxide semiconductor thin film of a desired thickness on the interface region, wherein performing one of the deposition cycles comprises depositing a metal precursor using an atomic layer deposition technique and oxidizing the metal precursor, and Repairing interface defects in the metal oxide semiconductor thin film with a sulfur-containing reactant during at least one deposition cycle of the plurality of deposition cycles.
  2. 2. The method of claim 1, wherein the metal precursor comprises a first precursor, wherein depositing a metal precursor using an atomic layer deposition technique and oxidizing the metal precursor comprises performing the steps of: (1) Depositing the first precursor on the interface region using atomic layer deposition techniques; (2) Performing an inert gas purge to purge the unreacted first precursor; (3) Introducing an oxygen-containing reactant to effect an oxidation reaction with the first precursor, and (4) An inert gas purge is performed to purge unreacted oxygen-containing reactant.
  3. 3. The method of claim 2, wherein repairing interface defects in the metal oxide semiconductor thin film with a sulfur-containing reactant comprises performing the steps of: Introducing a sulfur-containing reactant to deactivate oxygen vacancies in the metal oxide formed after oxidizing the first precursor after step (4), and An inert gas purge is performed to purge unreacted sulfur-containing reactant.
  4. 4. The method of claim 1, wherein the metal precursor comprises a first precursor, wherein depositing a metal precursor using an atomic layer deposition technique and oxidizing the metal precursor comprises performing at least one first sub-cycle, one of the first sub-cycles comprising performing the steps of: (A1) Depositing the first precursor on the interface region using atomic layer deposition techniques; (A2) Performing an inert gas purge to purge the unreacted first precursor; (A3) Introducing an oxygen-containing reactant to effect an oxidation reaction with the first precursor, and (A4) An inert gas purge is performed to purge unreacted oxygen-containing reactant.
  5. 5. The method of claim 4, wherein the metal precursor further comprises a second precursor, wherein depositing a metal precursor using an atomic layer deposition technique and oxidizing the metal precursor further comprises performing at least one second sub-cycle after the at least one first sub-cycle, performing one of the second sub-cycles comprising performing the steps of: (B1) Depositing the second precursor on the interface region using atomic layer deposition techniques after step (A4); (B2) Performing an inert gas purge to purge the unreacted second precursor; (B3) Introducing an oxygen-containing reactant to effect an oxidation reaction with the second precursor, and (B4) An inert gas purge is performed to purge unreacted oxygen-containing reactant.
  6. 6. The method of claim 5, wherein repairing interface defects in the metal oxide semiconductor thin film with a sulfur-containing reactant comprises performing the steps of: Introducing a sulfur-containing reactant to deactivate oxygen vacancies in the metal oxide formed after oxidation of the second precursor after step (B4), and An inert gas purge is performed to purge unreacted sulfur-containing reactant.
  7. 7. The method of claim 5, wherein repairing interface defects in the metal oxide semiconductor thin film with a sulfur-containing reactant comprises performing the steps of: introducing a sulfur-containing reactant after step (A4) and before step (B1) to deactivate oxygen vacancies in the metal oxide formed after oxidation of the first precursor, and An inert gas purge is performed to purge unreacted sulfur-containing reactant.
  8. 8. The method of claim 7, wherein the method further comprises: the following steps are performed in at least one deposition cycle of the plurality of deposition cycles: Introducing a sulfur-containing reactant to deactivate oxygen vacancies in the metal oxide formed after oxidation of the second precursor after step (B4), and An inert gas purge is performed to purge unreacted sulfur-containing reactant.
  9. 9. The method of claim 1, wherein the metal oxide semiconductor thin film comprises one of a binary metal oxide, a ternary metal oxide, or a metal oxide of three or more.
  10. 10. The method of claim 1, wherein the sulfur-containing reactant is a sulfur-containing inorganic gas or a thiol-based organic compound.
  11. 11. The method of claim 1, wherein the desired thickness is no more than 1nm.
  12. 12. A thin film transistor, comprising: A substrate; A gate dielectric; A channel layer; metal source drain and metal gate, and A thio-modified metal oxide semiconductor interface layer between the gate dielectric and the channel layer, wherein the thio-modified metal oxide semiconductor interface layer is prepared using the method of any of claims 1 to 11.
  13. 13. The thin film transistor of claim 12, wherein the thin film transistor is a top gate structure, a bottom gate structure, a ring gate structure, or a vertical ring channel structure.
  14. 14. A method for manufacturing a thin film transistor, the method comprising: preparing a substrate, and Preparing a gate dielectric, a channel layer, a metal source drain and a metal gate, and a thio-modified metal oxide semiconductor interface layer between the gate dielectric and the channel layer on the substrate, wherein the thio-modified metal oxide semiconductor interface layer is prepared using the method of any of claims 1 to 11.
  15. 15. The method of claim 14, wherein the channel layer and the sulfur-based modified metal oxide semiconductor interfacial layer are prepared in different reaction chambers.
  16. 16. A system for preparing a metal oxide semiconductor thin film, comprising a deposition cycle execution section and an interface defect repair section, the system being configured to execute the steps of: Performing a plurality of deposition cycles to form a metal oxide semiconductor thin film of a desired thickness on an interface region using a deposition cycle performing part, wherein performing one of the deposition cycles includes depositing a metal precursor using an atomic layer deposition technique and oxidizing the metal precursor, and Using an interface defect repair portion, repairing an interface defect in the metal oxide semiconductor thin film with a sulfur-containing reactant in at least one deposition cycle of the plurality of deposition cycles.

Description

Thin film preparation method, thin film transistor and preparation method thereof Technical Field The application relates to the technical field of semiconductors, in particular to a thin film preparation method and a thin film transistor and a preparation method thereof. Background With the rapid development of information technology, an amorphous oxide semiconductor (Amorphous Oxide Semiconductor, AOS) thin film transistor (Thin Film Transistor, TFT) is becoming a core technology for realizing integration of sensing, storage, and computation. In the innovative application scene, the AOS TFT not only has excellent light response characteristics, so that the AOS TFT can effectively sense and process light signals from the environment, but also can be tightly combined with a neural network architecture to form a self-learning and self-adapting intelligent system, and external data is analyzed and responded in real time, so that the data processing efficiency and response speed are remarkably improved. In addition, the extremely low thermal budget of the AOS TFT allows for excellent compatibility in subsequent processes, seamless integration into existing semiconductor manufacturing flows, and support the construction of complex three-dimensional integrated circuits. The technical progress lays a foundation for the operation of high-performance intelligent equipment, promotes the birth of a computing platform, opens up a wide application prospect in the front-edge fields of the Internet of things, artificial intelligence, edge computing and the like, and promotes the popularization and deepening of the intelligent technology. Despite the advantages of AOS TFTs, some challenges remain in their fabrication. The structure of the metal oxide semiconductor is complex, and the conductivity and stability of the material are determined by taking a metal-oxygen (M-O) bond as a main composition structure. In such disordered amorphous structures, oxygen vacancies (Vo) are one of the major defects, possibly leading to the formation of free carriers or electron traps. Particularly in a thin film transistor, the interface between a metal oxide semiconductor and a gate dielectric is more complicated, and metal dangling bonds (M-Vo) caused by oxygen vacancies, bonds without oxygen between metal atoms (M1-Vo-M2), and oxygen dangling bonds (O:) caused by mismatching with metals often occur. These bonds can act as charge traps, trapping carriers and inducing scattering, resulting in mobility degradation and hysteresis. Therefore, the interface defect not only reduces the performance of the device, but also causes the problems such as threshold voltage drift, subthreshold swing degradation and the like, and has adverse effects on the long-term performance of the thin film transistor. Therefore, one of the cores for ensuring excellent and stable performance of the subsequent compatible AOS-TFT is to realize effective regulation and control of interface defects. Especially for advanced node technology, with the size shrinking, interface regulation becomes more important. Disclosure of Invention It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. According to a first aspect of the present invention, there is provided a method for preparing a metal oxide semiconductor thin film, wherein the method comprises performing a plurality of deposition cycles to form a metal oxide semiconductor thin film of a desired thickness on an interface region, wherein performing one of the deposition cycles comprises depositing a metal precursor using an atomic layer deposition technique and oxidizing the metal precursor, and repairing interface defects in the metal oxide semiconductor thin film using a sulfur-containing reactant in at least one of the deposition cycles. In the above method, the metal precursor comprises a first precursor, wherein depositing the metal precursor using atomic layer deposition techniques and oxidizing the metal precursor comprises performing (1) depositing the first precursor using atomic layer deposition techniques on an interface region, (2) performing an inert gas purge to purge unreacted first precursor, (3) introducing an oxygen-containing reactant to perform an oxidation reaction with the first precursor, and (4) performing an inert gas purge to purge unreacted oxygen-containing reactant. In the above method, repairing the interface defect in the metal oxide semiconductor thin film with the sulfur-containing reactant includes performing a step of introducing the sulfur-containing reactant to passivate oxygen vacancies in the metal oxide generated after oxidizing the first precursor after step (4), and performing an inert gas purge to purge the unreacted sulfur-containing reactant. In the above method, the metal precursor comprises a