CN-122013150-A - Exhaust device, semiconductor process chamber and semiconductor processing equipment

Abstract

The invention provides an exhaust device, a semiconductor process chamber and semiconductor processing equipment. The device comprises a flow guiding cavity, wherein the flow guiding cavity comprises a first flow guiding cavity and a second flow guiding cavity, the first flow guiding cavity and the second flow guiding cavity are arranged in parallel along the same circumferential direction, the exhaust device further comprises a first air inlet hole, a second air inlet hole and an exhaust hole, the first air inlet hole is arranged on the first flow guiding cavity and is communicated with the interior of the first flow guiding cavity, the second air inlet hole is arranged on the second flow guiding cavity and is communicated with the interior of the second flow guiding cavity, the first air inlet hole and the second air inlet hole are both communicated with the semiconductor process cavity, the first flow guiding cavity and the second flow guiding cavity are both communicated with the exhaust hole, and the air flow direction in the first flow guiding cavity is opposite to the air flow direction in the second flow guiding cavity. The scheme can improve the process uniformity (such as film thickness uniformity) and the process uniformity in the wafer and among wafers.

Inventors

• LAN LIGUANG
• SHI XIAOPING

Assignees

• 北京北方华创微电子装备有限公司

Dates

Publication Date

20260512

Application Date

20241108

Claims (20)

1. 1. The exhaust device is applied to a semiconductor process chamber and is characterized by comprising a flow guide cavity, wherein the flow guide cavity comprises a first flow guide cavity and a second flow guide cavity, and the first flow guide cavity and the second flow guide cavity are arranged in parallel along the same circumferential direction; The exhaust device further comprises a first air inlet hole, a second air inlet hole and an exhaust hole, wherein the first air inlet hole is arranged on the first diversion cavity and is communicated with the interior of the first diversion cavity; The first flow guiding cavity and the second flow guiding cavity are communicated with the exhaust hole, and the air flow direction in the first flow guiding cavity is opposite to the air flow direction in the second flow guiding cavity.
2. 2. The exhaust of claim 1, wherein the first and second flow directing chambers are each in direct communication with the exhaust orifice and are in opposite air flow directions.
3. 3. The exhaust apparatus of claim 1, wherein the first or second flow directing chamber is in direct communication with the exhaust vent, the first and second flow directing chambers are in communication and the direction of air flow is reversed.
4. 4. The exhaust apparatus of claim 2, wherein one end of the first flow-directing chamber is an open end and is in direct communication with the exhaust orifice, and the other end of the first flow-directing chamber is a closed end; The opening ends of the first flow guide cavity and the second flow guide cavity are opposite in direction along the circumferential direction and are positioned on two sides of the exhaust hole along the circumferential direction.
5. 5. The exhaust apparatus of claim 4, wherein the second flow directing chamber is located at a periphery of the first flow directing chamber; The guide cavity is annular, an arc-shaped partition wall and two radial partition walls are arranged in the guide cavity, the arc-shaped partition walls are vertically arranged, an annular cavity formed by the guide cavity is separated to form an inner ring arc-shaped cavity and an outer ring arc-shaped cavity, and the inner ring arc-shaped cavity and the outer ring arc-shaped cavity are respectively used as the first guide cavity and the second guide cavity; One radial isolation wall is connected between the first end of the arc isolation wall and the outer peripheral wall of the annular cavity so that one end of the outer ring arc cavity forms a closed end, the other radial isolation wall is connected between the second end of the arc isolation wall and the inner peripheral wall of the annular cavity so that one end of the inner ring arc cavity forms a closed end, and one ends of the inner ring arc cavity and the outer ring arc cavity, which are not provided with the radial isolation wall, are open ends and are directly communicated with the exhaust holes.
6. 6. The exhaust apparatus of claim 4, wherein the second flow directing chamber is located below the first flow directing chamber; the flow guiding cavity is annular, an arc-shaped partition wall and two vertical partition walls are arranged in the flow guiding cavity, the arc-shaped partition walls are horizontally arranged, an annular cavity formed by the flow guiding cavity is separated to form an upper ring arc-shaped cavity and a lower ring arc-shaped cavity, and the upper ring arc-shaped cavity and the lower ring arc-shaped cavity are respectively used as the first flow guiding cavity and the second flow guiding cavity; One of the vertical isolation walls is connected between the first end of the arc isolation wall and the top wall of the annular cavity, so that one end of the upper ring of arc-shaped cavity forms a closed end, the other vertical isolation wall is connected between the second end of the arc-shaped isolation wall and the bottom wall of the annular cavity, so that one end of the lower ring of arc-shaped cavity forms a closed end, and one ends of the upper ring of arc-shaped cavity and the lower ring of arc-shaped cavity, which are not provided with the vertical isolation wall, are open ends and are directly communicated with the exhaust holes.
7. 7. The exhaust apparatus of claim 3, wherein one end of the first flow directing chamber is an open end and the other end of the first flow directing chamber is a closed end; The opening end of the first flow guiding cavity and the opening end of the second flow guiding cavity are oriented in the same direction along the circumferential direction and are communicated with each other; the first diversion cavity or the second diversion cavity is directly communicated with the exhaust hole at a position close to the closed end.
8. 8. The exhaust of claim 7, wherein the second flow directing chamber is located at a periphery of the first flow directing chamber; The guide cavity is annular, an arc-shaped partition wall and two radial partition walls are arranged in the guide cavity, the arc-shaped partition walls are vertically arranged, an annular cavity formed by the guide cavity is separated to form an inner ring arc-shaped cavity and an outer ring arc-shaped cavity, and the inner ring arc-shaped cavity and the outer ring arc-shaped cavity are respectively used as the first guide cavity and the second guide cavity; One radial isolation wall is connected between the first end of the arc-shaped isolation wall and the outer peripheral wall of the annular cavity so that one end of the outer ring arc-shaped cavity forms a closed end, and the other radial isolation wall is connected between the first end of the arc-shaped isolation wall and the inner peripheral wall of the annular cavity so that one end of the inner ring arc-shaped cavity forms a closed end; The exhaust hole is communicated with the inner ring arc-shaped cavity or the outer ring arc-shaped cavity at a position close to the closed end.
9. 9. The exhaust of claim 7, wherein the second flow directing chamber is located below the first flow directing chamber; the flow guiding cavity is annular, an arc-shaped partition wall and two vertical partition walls are arranged in the flow guiding cavity, the arc-shaped partition walls are horizontally arranged, an annular cavity formed by the flow guiding cavity is separated to form an upper ring arc-shaped cavity and a lower ring arc-shaped cavity, and the upper ring arc-shaped cavity and the lower ring arc-shaped cavity are respectively used as the first flow guiding cavity and the second flow guiding cavity; One of the vertical isolation walls is connected between the first end of the arc-shaped isolation wall and the top wall of the annular cavity, so that one end of the upper ring of arc-shaped cavity forms a closed end, and the other vertical isolation wall is connected between the first end of the arc-shaped isolation wall and the bottom wall of the annular cavity, so that one end of the lower ring of arc-shaped cavity forms a closed end; The exhaust hole is communicated with the upper ring arc-shaped cavity or the lower ring arc-shaped cavity at a position close to the closed end.
10. 10. The exhaust apparatus of claim 5 or 8, wherein the first air intake and the second air intake are located at lower sides of the first and second air guide chambers, or The first air inlet and the second air inlet are both positioned on the upper sides of the first diversion cavity and the second diversion cavity.
11. 11. The exhaust apparatus according to claim 6 or 9, wherein the exhaust hole is located on an outer peripheral side of the first and second flow guiding chambers; The first air inlet hole is positioned at one side of the upper side or the inner periphery of the first diversion cavity, and the second air inlet hole is positioned at one side of the lower side or the inner periphery of the second diversion cavity.
12. 12. The exhaust apparatus according to any one of claims 1 to 9, wherein the flow guiding chamber is further configured with a buffer chamber extending in the circumferential direction and located between the first flow guiding chamber and the second flow guiding chamber.
13. 13. The exhaust of claim 12, wherein the second flow directing chamber is located at a periphery of the first flow directing chamber; The first air inlet is positioned on the side wall of the first diversion cavity facing the buffer cavity side, and the second air inlet is positioned on the side wall of the second diversion cavity facing the buffer cavity side; the exhaust hole is positioned at the lower side of the first diversion cavity and/or the second diversion cavity.
14. 14. The exhaust of claim 12, wherein the second flow directing chamber is located below the first flow directing chamber; the first air inlet is positioned on the lower wall of the first diversion cavity facing the buffer cavity side, and the second air inlet is positioned on the upper wall of the second diversion cavity facing the buffer cavity side; the exhaust hole is positioned at one side of the periphery of the first diversion cavity and/or the second diversion cavity.
15. 15. The exhaust apparatus according to any one of claims 1 to 9, wherein a plurality of the first air intake holes are provided at intervals in the circumferential direction, a plurality of the second air intake holes are provided at intervals in the circumferential direction, and each of the first air intake holes and each of the second air intake holes are provided in one-to-one correspondence with each other.
16. 16. The exhaust apparatus according to any one of claims 1 to 9, wherein a distribution density of the plurality of first intake holes increases in the circumferential direction and in a direction away from the exhaust hole, a distribution density of the plurality of second intake holes increases in the circumferential direction and in a direction away from the exhaust hole, and/or, The cross-sectional areas of the plurality of first air inlet holes are gradually increased along the circumferential direction and along the direction away from the air outlet holes, and the cross-sectional areas of the plurality of second air inlet holes are gradually increased along the circumferential direction and along the direction away from the air outlet holes.
17. 17. A semiconductor process chamber comprising a chamber body, further comprising the exhaust apparatus of any of claims 1-16; The flow guiding cavity and the cavity body are coaxially arranged.
18. 18. The semiconductor process chamber of claim 17, wherein a susceptor for carrying wafers is disposed in the chamber body, the flow directing chamber is disposed in the chamber body at or below a periphery of the susceptor, and an outlet end of the exhaust vent is disposed outside the chamber body.
19. 19. The semiconductor process chamber of claim 18, wherein the flow directing chamber is annular and comprises an outer peripheral wall, an inner peripheral wall, a top wall, and a bottom wall; the outer peripheral wall and the bottom wall are part of the side wall and the bottom wall of the chamber body respectively; The inner peripheral surface of the outer peripheral wall and the outer peripheral surface of the annular wall are respectively provided with a step part, and the outer peripheral edge and the inner peripheral edge of the top wall are respectively lapped on the step parts of the outer peripheral wall and the annular wall.
20. 20. The semiconductor process chamber of claim 17, wherein the flow directing cavity is disposed circumferentially around the chamber body; The cavity body comprises an inner cavity and an outer cavity body which is covered around the inner cavity at intervals, wherein the inner cavity is provided with an upper end opening and a lower end opening, the upper end of the outer cavity body is a closed end, and the lower end of the outer cavity body is in sealing connection with the lower end of the outer peripheral surface of the inner cavity body; the guide cavity is sleeved on the periphery of the outer cavity, or the inner peripheral wall of the guide cavity is a part of the outer cavity.

Description

Exhaust device, semiconductor process chamber and semiconductor processing equipment Technical Field The invention relates to the field of semiconductor manufacturing, in particular to an exhaust device, a semiconductor process chamber and semiconductor processing equipment. Background Along with the rapid iterative updating of integrated circuit technology, electronic components are continually promoted to develop towards miniaturization, integration and high efficiency, and higher requirements are also put on processes such as deposition, etching and the like, and particularly, the limitation of three-dimensional structure devices is increasingly revealed. The air inlet device and the vacuum exhaust system are very important components in the semiconductor processing equipment, and directly influence the distribution and the process effect of the air flow field in the process chamber. For thin film Deposition processes, such as plasma enhanced chemical Vapor Deposition (PLASMAENHANCED CHEMICAL Vapor Deposition, PECVD) in chemical Vapor Deposition (Chemical VaporDeposition, CVD) technology, the process has advantages of low reaction temperature, fast Deposition speed, good film quality, etc., while factors influencing the quality of the PECVD process are many, wherein the distribution of the gas inlet and the uniformity of the gas outlet play a critical role in the Deposition rate and the uniformity of the thin film. In another example, low pressure chemical vapor deposition (Low PressureChemical Vapor Deposition, LPCVD) technology is mainly used to deposit SiO/SiN/Poly film. In equipment such as PECVD, LPCVD, etc., the exhaust port of the process chamber is typically placed off-center or on one side of the chamber periphery due to hardware layout constraints such as chamber configuration and heating susceptor, which can result in non-uniform exhaust pressure around the chamber, non-uniform exhaust gas flow fields, and thus process uniformity (e.g., film thickness uniformity) and intra-wafer and inter-wafer process uniformity. Disclosure of Invention The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes an exhaust device, a semiconductor process chamber and a semiconductor processing device, which can improve process uniformity (such as film thickness uniformity) and process uniformity in and among wafers. The invention provides an exhaust device for a semiconductor process chamber, which comprises a flow guiding cavity, wherein the flow guiding cavity comprises a first flow guiding cavity and a second flow guiding cavity, and the first flow guiding cavity and the second flow guiding cavity are arranged in parallel along the same circumferential direction; The exhaust device further comprises a first air inlet hole, a second air inlet hole and an exhaust hole, wherein the first air inlet hole is arranged on the first diversion cavity and is communicated with the interior of the first diversion cavity; The first flow guiding cavity and the second flow guiding cavity are communicated with the exhaust hole, and the air flow direction in the first flow guiding cavity is opposite to the air flow direction in the second flow guiding cavity. In some embodiments, the first and second flow directing cavities are both in direct communication with the vent and the direction of air flow is opposite. In some embodiments, the first flow guiding cavity or the second flow guiding cavity is directly communicated with the exhaust hole, the first flow guiding cavity and the second flow guiding cavity are communicated, and the air flow directions are opposite. In some embodiments, one end of the first flow guiding cavity is an open end and is directly communicated with the exhaust hole, and the other end of the first flow guiding cavity is a closed end; The opening ends of the first flow guide cavity and the second flow guide cavity are opposite in direction along the circumferential direction and are positioned on two sides of the exhaust hole along the circumferential direction. In some embodiments, the second flow directing chamber is located at a periphery of the first flow directing chamber; The guide cavity is annular, an arc-shaped partition wall and two radial partition walls are arranged in the guide cavity, the arc-shaped partition walls are vertically arranged, an annular cavity formed by the guide cavity is separated to form an inner ring arc-shaped cavity and an outer ring arc-shaped cavity, and the inner ring arc-shaped cavity and the outer ring arc-shaped cavity are respectively used as the first guide cavity and the second guide cavity; One radial isolation wall is connected between the first end of the arc isolation wall and the outer peripheral wall of the annular cavity so that one end of the outer ring arc cavity forms a closed end, the other radial isolation wall is connected between the second end of the arc isolation wall and the inner periphe