CN-122013151-A - High-purity solid precursor source bottle

Abstract

The invention discloses a high-purity solid precursor source bottle which comprises a heating outer cover, an outer cover sealing plate, a source bottle main body and a source bottle cap plate, wherein the inner cavity of the heating outer cover is a first cavity, the heating outer cover is provided with an outer wall with preset thickness, the first cavity is filled with a heat conducting medium, the outer wall is inserted with a plurality of embedded heating rods, the source bottle main body is arranged in the first cavity, the source bottle cap plate covers the source bottle main body, the inner cavity of the source bottle main body is a second cavity used for placing a plurality of trays carrying solid precursors, and the second cavity is provided with a hollow central heating rod. The high-purity solid precursor source bottle disclosed by the invention achieves the aims of reducing pollution risk, improving temperature control uniformity, improving conveying stability and efficiency, reducing particle carry-over and providing stable and reliable precursor supply guarantee for a semiconductor film deposition process.

Inventors

• KONG DEJUN

Assignees

• 浙江大学绍兴研究院

Dates

Publication Date

20260512

Application Date

20251230

Claims (5)

1. 1. The utility model provides a solid precursor source bottle of high purity which characterized in that, includes heating dustcoat, dustcoat closing plate, source bottle main part and source bottle apron, wherein: The inner cavity of the heating outer cover is a first cavity, the heating outer cover is provided with an outer wall with preset thickness, the first cavity is filled with a heat conducting medium, and a plurality of embedded heating rods are inserted into the outer wall; the source bottle main body is arranged in the first cavity, the source bottle cover plate covers the source bottle main body, and the outer cover sealing plate covers the heating outer cover and the source bottle cover plate at the same time; The internal cavity of the source bottle main body is a second cavity for placing a plurality of trays loaded with solid precursors, the trays are stacked to form a layered structure, and a filter plate is arranged at the top of the second cavity; the second cavity is provided with a hollow central heating rod, the central heating rod sequentially penetrates through the first central hole part of the filter plate and the second central hole parts of the trays from top to bottom, and a central area gap is arranged between the central heating rod and each second central hole part; the temperature is controlled by adopting a double heating mode, and the method is concretely as follows: the embedded heating rod on the outer wall generates heat, the heat is conducted to the whole heating outer cover, and then is conducted to the heat conducting medium through the heating outer cover, so that the temperature is uniformly conducted to the second cavity, the buffer type temperature control is realized, the uniform temperature distribution is ensured, and the solid precursor in the second cavity is heated and sublimated; And carrier gas is introduced through the hollow structure of the central heating rod, is heated by the central heating rod and is output to the bottom of the bottommost tray, and the carrier gas carries gaseous precursors sublimated by the solid precursors and is lifted together in a central area gap, is filtered by the filter plate and is conveyed to the reaction cavity by the air outlet pipe.
2. 2. The high purity solid precursor source vial of claim 1 wherein the inner wall of the heating housing and the inner wall of the source vial body are both treated with a SiC/Ta composite coating.
3. 3. The high purity solid precursor source vial of claim 1, wherein the top of the outer wall and the top of the source vial cover plate are both provided with a sealing groove, the sealing groove being provided with a gasket for sealing with the housing sealing plate.
4. 4. The high-purity solid precursor source bottle according to claim 1, wherein a shallow groove air guide structure is arranged on the outer ring of the second central hole portion of the tray and used for improving stability of output of the solid precursor after sublimation, and a sinking groove structure is arranged on the outer ring of the shallow groove air guide structure and used for placing the solid precursor.
5. 5. The bottle of high purity solid precursor source as defined in claim 1 wherein the filter plate is dome-shaped.

Description

High-purity solid precursor source bottle Technical Field The invention belongs to the technical field of semiconductor film deposition, and particularly relates to a high-purity solid precursor source bottle which is suitable for storage, transportation and temperature control of high-purity solid precursors in ALD, CVD and other processes. Background The solid precursor delivery system is widely applied to the semiconductor film deposition process, and has the core function of storing and delivering high-purity solid precursor materials. In the prior art, a source bottle is made of internal polished stainless steel or quartz, and a solid precursor is sublimated or melted through a heating system and then is conveyed to a reaction cavity by carrier gas. However, the prior art suffers from the following significant drawbacks: 1. the temperature control is uneven, namely the heating uniformity of a heating system is poor, the partial overheating phenomenon is easy to cause inconsistent precursor decomposition rate, and the process stability is affected; 2. The pollution risk is high, the traditional source bottle is made of metal and only is subjected to internal polishing treatment, and in the long-time use process, a corrosive precursor is easy to absorb moisture, so that the purity of the precursor is reduced, and meanwhile, the corrosion damage in the steel bottle is aggravated, and the precursor is further polluted; 3. the sublimation rate of the solid precursor is unstable, so that the process repeatability is poor, and the stable conveying efficiency and uniform air flow cannot be ensured; 4. The particle problem is that the precursor possibly carries a small amount of solid powder in the conveying process, so that the risks of pipeline pollution and blockage are increased, and the quality of the deposition process is affected. Disclosure of Invention The invention mainly aims to provide a high-purity solid precursor source bottle, which is used for reducing pollution risk, improving temperature control uniformity, improving conveying stability and efficiency, reducing particle carry-out and providing stable and reliable precursor supply guarantee for a semiconductor film deposition process. In order to achieve the above object, the present invention provides a high purity solid precursor source bottle, comprising a heating housing, a housing sealing plate, a source bottle body and a source bottle cover plate, wherein: The inner cavity of the heating outer cover is a first cavity, the heating outer cover is provided with an outer wall with preset thickness, the first cavity is filled with a heat conducting medium, and a plurality of embedded heating rods are inserted into the outer wall; the source bottle main body is arranged in the first cavity, the source bottle cover plate covers the source bottle main body, and the outer cover sealing plate covers the heating outer cover and the source bottle cover plate at the same time; The internal cavity of the source bottle main body is a second cavity for placing a plurality of trays loaded with solid precursors, the trays are stacked to form a layered structure, and a filter plate is arranged at the top of the second cavity; the second cavity is provided with a hollow central heating rod, the central heating rod sequentially penetrates through the first central hole part of the filter plate and the second central hole parts of the trays from top to bottom, and a central area gap is arranged between the central heating rod and each second central hole part; the temperature is controlled by adopting a double heating mode, and the method is concretely as follows: the embedded heating rod on the outer wall generates heat, the heat is conducted to the whole heating outer cover, and then is conducted to the heat conducting medium through the heating outer cover, so that the temperature is uniformly conducted to the second cavity, the buffer type temperature control is realized, the uniform temperature distribution is ensured, and the solid precursor in the second cavity is heated and sublimated; And carrier gas is introduced through the hollow structure of the central heating rod, is heated by the central heating rod and is output to the bottom of the bottommost tray, and the carrier gas carries gaseous precursors sublimated by the solid precursors and is lifted together in a central area gap, is filtered by the filter plate and is conveyed to the reaction cavity by the air outlet pipe. As a further preferable technical scheme of the technical scheme, the inner wall of the heating housing and the inner wall of the source bottle main body are subjected to SiC/Ta composite coating treatment. As a further preferable technical scheme of the technical scheme, sealing grooves are formed in the top of the outer wall and the top of the source bottle cover plate, and sealing gaskets are arranged on the sealing grooves and used for sealing the outer cover sealing plate. A