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CN-122013153-A - Semiconductor thin film processing apparatus and semiconductor thin film deposition method

CN122013153ACN 122013153 ACN122013153 ACN 122013153ACN-122013153-A

Abstract

The embodiment of the application provides a semiconductor film processing device and a semiconductor film deposition method, wherein the semiconductor film processing device comprises a chamber base, a cover body, an air distribution assembly and a bearing part, wherein the chamber base is provided with a top opening and a transfer port, the cover body is detachably arranged between the top opening and the chamber base to form a reaction cavity, the cover body is provided with a mounting groove, the air distribution assembly is arranged in the mounting groove, a partition piece of the air distribution assembly comprises a central part and a plurality of branch parts which are connected to the central part at intervals, the reaction cavity is at least partitioned into a first reaction area and a second reaction area by a projection part of the plurality of branch parts on the chamber base, the first reaction area is used for converging reaction gases, the second reaction area is used for converging metal source gases and avoiding the transfer port, and the metal sources such as a liquid source or a solid source can be effectively prevented from being deposited at the transfer port, and the transfer efficiency of a substrate and the sealing property of the transfer port are improved.

Inventors

  • ZHI SHUNHUA
  • HENG DEZHENG
  • XU KANG
  • RUAN HAO
  • WANG GUOCHAO

Assignees

  • 江苏微导纳米科技股份有限公司

Dates

Publication Date
20260512
Application Date
20260213

Claims (17)

  1. 1. A semiconductor thin film processing apparatus, comprising: The device comprises a chamber base (1), wherein the chamber base (1) is provided with a top opening (11) and a sheet conveying port (12); The cover body (2) is detachably arranged on the top opening (11) and forms a reaction cavity with the cavity base (1), and the cover body (2) is provided with a mounting groove (21); The gas distribution assembly (3), the gas distribution assembly (3) install in mounting groove (21), the gas distribution assembly (3) include separating piece (31), separating piece (31) include central part (311) and interval connect to a plurality of branch portions (312) of central part (311), a plurality of branch portions (312) will reaction chamber is separated first reaction area (101) and second reaction area (102) at least in the projection part on cavity base (1), first reaction area (101) are used for gathering reaction gas, second reaction area (102) are used for gathering metal source gas and dodge pass piece mouth (12).
  2. 2. A semiconductor thin film processing apparatus according to claim 1, wherein the gas distribution assembly (3) has a gas inlet end and a gas outlet end, and the gas inlet end is located outside the reaction chamber, and the gas outlet end is communicated to the reaction chamber; The air inlet end of the air distribution assembly (3) comprises a central air inlet end positioned on the central part (311) and a branch air inlet end positioned on the branch part (312), the air outlet end of the air distribution assembly (3) comprises a central air outlet end positioned on the central part (311) and a branch air outlet end positioned on the branch part (312), the central air outlet end is communicated with the central air inlet end, and the branch air outlet end is communicated with the branch air inlet end; The central air inlet end and the branch air inlet ends are used for independently air inlet.
  3. 3. The semiconductor thin film processing apparatus according to claim 1, wherein the plurality of branch portions (312) includes a first branch (3121) and a second branch (3122), the first branch (3121) and the second branch (3122) are connected to the central portion (311) at intervals, and an angle between the first branch (3121) and the second branch (3122) is 45 ° -180 °.
  4. 4. The semiconductor thin film processing apparatus according to claim 3, wherein a central angle corresponding to the first reaction region is larger than a central angle corresponding to the second reaction region.
  5. 5. The semiconductor thin film processing apparatus according to claim 1, wherein the plurality of branches (312) includes a first branch (3121), a second branch (3122), and a third branch (3123), the first branch (3121), the second branch (3122), and the third branch (3123) are connected to the central portion (311) at intervals, and a projection portion of the plurality of branches (312) on the chamber base (1) partitions the reaction chamber into the first reaction region (101), the second reaction region (102), and a regulation region (104), the regulation region (104) for collecting a regulated gas.
  6. 6. The semiconductor thin film processing apparatus according to claim 5, wherein a central angle corresponding to the first reaction region is larger than a central angle corresponding to the regulation region, and a central angle corresponding to the second reaction region is larger than a central angle corresponding to the regulation region.
  7. 7. The semiconductor thin film processing apparatus according to claim 5, wherein the first reaction region corresponds to a central angle of 60 ° to 165 °, and the second reaction region corresponds to a central angle of 60 ° to 165 °.
  8. 8. The semiconductor thin film processing apparatus according to claim 5, wherein the gas distribution assembly (3) includes a first gas distribution member (32), a second gas distribution member (33), and a regulating gas distribution member (34), the first gas distribution member (32) being disposed in a portion of the mounting groove (21) and opposite the first reaction region, the second gas distribution member (33) being disposed in a portion of the mounting groove (21) and opposite the second reaction region, the regulating gas distribution member (34) being disposed in a portion of the mounting groove (21) and opposite the regulating region.
  9. 9. The semiconductor thin film processing apparatus according to claim 1, wherein the transfer port (12) is opposed to the first reaction region.
  10. 10. The semiconductor thin film processing apparatus according to claim 1, wherein the branching portion (312) has therein a branching gas path including at least one branching gas inlet (31201) located on an inlet side of the branching portion (312) and a plurality of branching gas outlets (31202) located on an outlet side of the branching portion (312); The air outlet side of the branch part (312) comprises a plurality of strip-shaped bulges (31203), the strip-shaped bulges (31203) are distributed at intervals in the circumferential direction of the separating piece (31), and the plurality of branch air outlets (31202) are arranged on the plurality of strip-shaped bulges (31203).
  11. 11. The semiconductor thin film processing apparatus according to claim 10, wherein the branch air inlet (31201) is located at an end of the branch portion (312) on an air inlet side near the center portion (311).
  12. 12. The semiconductor thin film processing apparatus according to claim 10, wherein the branch gas path includes a partition gas buffer chamber (3124) provided in the branch portion (312), the branch gas inlet (31201) being communicated to the plurality of branch gas outlets (31202) through the partition gas buffer chamber (3124).
  13. 13. The semiconductor thin film processing apparatus according to claim 10, wherein the center portion (311) has therein a center gas path including at least one center gas inlet (3111) located on an inlet side of the center portion (311) and a plurality of center gas outlets (3112) located on an outlet side of the center portion (311); The plurality of center air outlets (3112) form a plurality of rows and are disposed corresponding to the plurality of branch air outlets (31202).
  14. 14. The semiconductor thin film processing apparatus according to claim 1, wherein the semiconductor thin film processing apparatus is a thin film deposition apparatus or a thin film etching apparatus.
  15. 15. A semiconductor thin film deposition method applied to the semiconductor thin film processing apparatus according to any one of claims 1 to 14, comprising: transmitting the first substrate to the bearing part through the chip transmitting port; Rotating the carrier to transfer the first substrate to the second reaction zone; Transmitting a second substrate to the bearing part through the substrate transmitting port, wherein the second substrate is positioned in a first reaction area; Wherein, the second reaction area dodges the sheet conveying port.
  16. 16. The semiconductor thin film deposition method according to claim 15, wherein the reaction chamber further comprises a regulation region for converging the catalyst gas, the process of the semiconductor thin film deposition method comprising: And rotating the bearing part to enable the substrate to sequentially pass through the second reaction area, the regulating area and the first reaction area.
  17. 17. The semiconductor thin film deposition method according to claim 15, wherein the reaction chamber further comprises a regulation region for condensing the inhibitor gas, the process of the semiconductor thin film deposition method comprising: And rotating the bearing part to enable the substrate to sequentially pass through the regulating and controlling area, the second reaction area and the first reaction area.

Description

Semiconductor thin film processing apparatus and semiconductor thin film deposition method Technical Field The application belongs to the technical field of semiconductor processing, and particularly relates to semiconductor film processing equipment and a semiconductor film deposition method. Background In the field of semiconductor fabrication, semiconductor thin film deposition is a critical process step. Specifically, in the semiconductor thin film processing apparatus, a substrate such as a wafer is transferred to a reaction chamber through a transfer port, and then a thin film deposition operation is performed on the substrate. However, in the actual process reaction, a process source such as a liquid source or a solid source is easily deposited at the transfer port. Along with the long-time operation of the equipment, the sediment at the slice conveying port can be continuously accumulated, so that the slice conveying efficiency of the substrate can be influenced, the accumulation of the sediment can also influence the tightness of the slice conveying port, the gas in the reaction cavity is leaked, the stability of the reaction environment is damaged, and the quality and uniformity of film deposition are further influenced. Therefore, solving the problem of deposition at the wafer transfer port is important to improving the performance and reliability of the semiconductor thin film processing equipment. Disclosure of Invention An object of an embodiment of the present application is to provide a new technical solution of a semiconductor thin film processing apparatus and a semiconductor thin film deposition method. According to a first aspect of an embodiment of the present application, there is provided a semiconductor thin film processing apparatus including: The chamber base is provided with a top opening and a sheet conveying port; The cover body is detachably arranged at the top opening and forms a reaction cavity with the cavity base, and the cover body is provided with a mounting groove; the air distribution assembly is arranged in the mounting groove, The gas distribution assembly comprises a partition piece, the partition piece comprises a central part and a plurality of branch parts which are connected to the central part at intervals, the projection parts of the branch parts on the chamber base divide the reaction cavity into at least a first reaction area and a second reaction area, the first reaction area is used for converging reaction gas, and the second reaction area is used for converging metal source gas and avoiding the sheet conveying opening. Optionally, the gas distribution assembly is provided with a gas inlet end and a gas outlet end, the gas inlet end is positioned outside the reaction cavity, and the gas outlet end is communicated with the reaction cavity; the air inlet end of the air distribution assembly comprises a central air inlet end positioned on the central part and a branch air inlet end positioned on the branch part, the air outlet end of the air distribution assembly comprises a central air outlet end positioned on the central part and a branch air outlet end positioned on the branch part, the central air outlet end is communicated with the central air inlet end, and the branch air outlet end is communicated with the branch air inlet end; The central air inlet end and the branch air inlet ends are used for independently air inlet. Optionally, the plurality of branches includes a first branch and a second branch, the first branch and the second branch are connected to the central portion at intervals, and an angle between the first branch and the second branch is 45 ° -180 °. Optionally, the central angle corresponding to the first reaction region is larger than the central angle corresponding to the second reaction region. Optionally, the plurality of branches includes a first branch, a second branch, and a third branch, the first branch, the second branch, and the third branch are connected to the central portion at intervals, and projection portions of the plurality of branches on the chamber base partition the reaction chamber into the first reaction region, the second reaction region, and a regulation region for collecting a regulated gas. Optionally, the central angle corresponding to the first reaction region is larger than the central angle corresponding to the regulation region, and the central angle corresponding to the second reaction region is larger than the central angle corresponding to the regulation region. Optionally, the central angle corresponding to the first reaction area is 60 ° -165 °, and the central angle corresponding to the second reaction area is 60 ° -165 °. Optionally, the gas distribution assembly includes a first gas distribution member, a second gas distribution member and a regulating gas distribution member, the first gas distribution member is disposed in a portion of the mounting groove and opposite to the first reaction region