CN-122013156-A - Chemical vapor deposition equipment and temperature control method thereof

CN122013156ACN 122013156 ACN122013156 ACN 122013156ACN-122013156-A

Abstract

The application discloses chemical vapor deposition equipment and a temperature control method thereof, wherein the chemical vapor deposition equipment comprises a cavity, a bearing device, a first air inlet component, a second air inlet component and a supporting column, wherein the first air inlet component is used for providing reaction gas for a wafer, the second air inlet component is used for providing adjustment gas for the cavity, the bearing device comprises a bearing table, the supporting column is positioned on the surface of the bearing table and is used for supporting the wafer so as to form a gap between the wafer and the surface of the bearing table, the heater is arranged inside the bearing table, an adjustment column is arranged inside the bearing table and can move up and down relative to the surface of the bearing table so as to change the distance between the top of the adjustment column and the lower surface of the wafer, the driving device is used for driving the adjustment column to move up and down, and the control device is configured to obtain measured temperature values of a plurality of temperature measurement points on the wafer and obtain average temperature values according to the measured temperature values, and the driving device of corresponding areas is controlled according to the difference value of each measured temperature value and the average temperature value.

Inventors

HUANG WANGWANG
WANG SONG
Zhou Danmei
HU WANCHUN

Assignees

合肥晶合集成电路股份有限公司

Dates

Publication Date: 20260512
Application Date: 20260410

Claims (10)

1. A chemical vapor deposition apparatus, comprising: A cavity; the bearing device is arranged in the cavity and is used for bearing the wafer; the first air inlet assembly is arranged above the bearing device and is used for providing reaction gas for the wafer; The second air inlet assembly is arranged at one side of the cavity and is used for providing adjusting gas into the cavity; wherein, bear device includes: A carrying platform; the support column is positioned on the surface of the bearing table and used for supporting the wafer so as to form a gap between the wafer and the surface of the bearing table; the heater is arranged inside the bearing table; The adjusting column is arranged in the bearing table and can move up and down relative to the surface of the bearing table so as to change the distance between the top of the adjusting column and the lower surface of the wafer; a driving device for driving the adjusting column to move up and down, and And the control device is configured to acquire measured temperature values of a plurality of temperature measurement points on the wafer, acquire an average temperature value according to the plurality of measured temperature values, and control the driving device of the area where the corresponding temperature measurement point is located according to the difference value of each measured temperature value and the average temperature value so as to regulate the movement of the regulating column.
2. The chemical vapor deposition apparatus according to claim 1, wherein the temperature measuring point is located at the top of the support column, the support column is made of an insulating material, and the support column is tapered with a narrow top and a wide bottom.
3. The chemical vapor deposition apparatus according to claim 1, wherein the susceptor is divided into a plurality of regions, each region is provided with the support column, and one or more adjustment columns surrounding the corresponding support column are provided in each region.
4. The chemical vapor deposition apparatus of claim 1, wherein the control device is further configured to: When the difference value is larger than zero, controlling the driving device of the corresponding area to drive at least part of the adjusting column to descend; And when the difference value is smaller than zero, controlling the driving device of the corresponding area to drive at least part of the adjusting column to rise.
5. The chemical vapor deposition apparatus of claim 1, wherein the control device is further configured to: when the difference value is larger than zero and smaller than a first preset value, controlling part of the adjusting columns in the corresponding area to descend; and when the difference value is larger than or equal to the first preset value, controlling all the adjusting columns in the corresponding area to descend.
6. The chemical vapor deposition apparatus of claim 1, wherein the control device is further configured to: When the difference value is smaller than zero and larger than a second preset value, controlling part of the adjusting columns in the corresponding area to rise; And when the difference value is smaller than or equal to the second preset value, controlling all the adjusting columns in the corresponding area to rise.
7. A temperature control method for a chemical vapor deposition apparatus, comprising: acquiring measured temperature values of a plurality of temperature measurement points of a wafer carried on a carrying device, and calculating an average temperature value according to the plurality of measured temperature values; Calculating a difference value between each of the measured temperature values and the average temperature value; According to the difference value, an adjusting column arranged in a bearing table of the bearing device and corresponding to the area where the temperature measuring point is located is controlled to move up and down so as to change the distance between the top of the adjusting column and the lower surface of the wafer, and therefore the cooling effect of adjusting gas flowing through a gap between the adjusting column and the lower surface of the wafer on the area corresponding to the wafer is adjusted.
8. The temperature control method according to claim 7, wherein controlling the upward and downward movement of the adjustment column according to the difference value comprises: when the difference value is larger than zero, controlling at least part of the adjusting columns in the corresponding area to descend; And when the difference value is smaller than zero, controlling at least part of the adjusting columns in the corresponding area to rise.
9. The temperature control method of claim 8, wherein controlling at least a portion of the conditioning column drop in the corresponding zone comprises: when the difference value is larger than zero and smaller than a first preset value, controlling part of the adjusting columns in the corresponding area to descend; and when the difference value is larger than or equal to the first preset value, controlling all the adjusting columns in the corresponding area to descend.
10. The temperature control method of claim 8, wherein controlling at least a portion of the regulatory column elevation of the corresponding zone comprises: When the difference value is smaller than zero and larger than a second preset value, controlling part of the adjusting columns in the corresponding area to rise; And when the difference value is smaller than or equal to the second preset value, controlling all the adjusting columns in the corresponding area to rise.

Description

Chemical vapor deposition equipment and temperature control method thereof Technical Field The invention relates to the technical field of semiconductor equipment, in particular to chemical vapor deposition equipment and a temperature control method thereof. Background The core of the film coating process of the chemical deposition equipment is to deposit a target substance on the surface of a wafer to form a film through chemical reaction, and the method specifically comprises the steps of introducing reaction gas into a cavity of the chemical deposition equipment, and controlling the temperature, the pressure and the like in the cavity to provide conditions for the chemical reaction of the reaction gas. The temperature of the chemical reaction is usually provided by a heater on the wafer carrying table, the wafer carrying table is preheated first, after the temperature is raised to a preset temperature, the reaction gas enters the cavity, and after the gas reaches the surface of the wafer, the reaction gas reacts to generate a film. The uniformity of the temperature of the bearing table is difficult to ensure when the existing heater is heated, the non-uniform characteristic of the temperature is conducted to the wafer to be amplified, and in practical application, a non-uniform thermal field as shown in the figure can appear, so that the thickness difference of films in different areas of the wafer is large, and the uniformity of the film thickness on the surface of the wafer is poor. Disclosure of Invention In view of the foregoing, it is an object of the present application to provide a chemical vapor deposition apparatus and a temperature control method thereof, so as to improve the uniformity of the wafer surface temperature. According to one aspect of the invention, a chemical vapor deposition apparatus is provided, comprising a chamber, a carrying device arranged in the chamber and used for carrying a wafer, a first air inlet component arranged above the carrying device and used for providing reaction gas for the wafer, a second air inlet component arranged at one side of the chamber and used for providing adjustment gas for the chamber, wherein the carrying device comprises a carrying platform, a supporting column arranged on the surface of the carrying platform and used for supporting the wafer so as to form a gap between the wafer and the surface of the carrying platform, a heater arranged in the carrying platform, an adjusting column arranged in the carrying platform and capable of moving up and down relative to the surface of the carrying platform and used for changing the distance between the top of the adjusting column and the lower surface of the wafer, a driving device used for driving the adjusting column to move up and down, and a control device configured to acquire measured temperature values of a plurality of temperature measurement points on the wafer and obtain average temperature values according to the measured temperature values, and a control device used for driving a temperature adjustment region corresponding to the average temperature value and the measured temperature values. Optionally, the temperature measuring point is located at the top of the supporting column, the supporting column is made of insulating materials, and the supporting column is in a conical shape with a narrow upper part and a wide lower part. Optionally, the carrying platform is divided into a plurality of areas, each area is provided with the support column, and each area is provided with one or more adjusting columns surrounding the corresponding support column. Optionally, the control device is further configured to control the driving device of the corresponding region to drive at least part of the adjusting column to descend when the difference is greater than zero, and control the driving device of the corresponding region to drive at least part of the adjusting column to ascend when the difference is less than zero. Optionally, the control device is further configured to control part of the adjustment columns of the corresponding area to descend when the difference is greater than zero and smaller than a first preset value, and to control all the adjustment columns of the corresponding area to descend when the difference is greater than or equal to the first preset value. Optionally, the control device is further configured to control part of the adjustment columns of the corresponding area to rise when the difference is smaller than zero and larger than a second preset value, and to control all the adjustment columns of the corresponding area to rise when the difference is smaller than or equal to the second preset value. According to another aspect of the invention, a temperature control method for a chemical vapor deposition apparatus is provided, which includes obtaining measured temperature values of a plurality of temperature measurement points of a wafer carried on a carrying device, calcu