CN-122013157-A - Heat insulation ring and chemical vapor deposition equipment

Abstract

The invention provides a heat-insulating ring and chemical vapor deposition equipment, wherein the chemical vapor deposition equipment comprises a reaction cavity, a wafer tray is arranged at the bottom of the reaction cavity, a heater is arranged below the wafer tray, the heat-insulating ring is arranged on the outer side of the wafer tray, the heat-insulating ring is provided with an annular inclined surface, the annular inclined surface faces the edge of a top sealing plate in the reaction cavity, the heat-insulating ring at least comprises a first arc-shaped section and a second arc-shaped section along the circumferential direction, the emissivity of the first arc-shaped section is larger than that of the second arc-shaped section, and at least part of the area of the first arc-shaped section is opposite to a wafer conveying flashboard in the reaction cavity. The invention is used for solving the problems that the edge temperature of the top sealing plate of the traditional chemical vapor deposition equipment is low, a low-temperature surface is formed at the position of the plate transmission flashboard, and the flow field above the heat insulation ring is uneven.

Inventors

• JIANG YONG
• GUO SHIPING
• DING WEI

Assignees

• 南昌中微半导体设备有限公司
• 中微半导体设备(上海)股份有限公司

Dates

Publication Date

20260512

Application Date

20241112

Claims (18)

1. 1. The heat insulation ring is applied to chemical vapor deposition equipment, the chemical vapor deposition equipment comprises a reaction cavity, a wafer tray is arranged at the bottom of the reaction cavity, a heater is arranged below the wafer tray, the heat insulation ring is arranged at the outer side of the wafer tray, and is characterized in that, The heat insulation ring is provided with an annular inclined surface, and the annular inclined surface faces to the edge of the top sealing plate in the reaction cavity; the heat insulation ring at least comprises a first arc-shaped section and a second arc-shaped section along the circumferential direction, wherein the emissivity of the first arc-shaped section is larger than that of the second arc-shaped section, and at least part of the area of the first arc-shaped section is opposite to the plate conveying flashboard in the reaction cavity.
2. 2. The insulating ring of claim 1, wherein said annular inclined surface is planar or is a convex continuous curved surface.
3. 3. The insulating ring of claim 2, wherein a top of the annular inclined surface is not higher than an upper surface of the wafer tray along a circumferential direction of the insulating ring.
4. 4. The insulating ring of claim 1, wherein, during processing, a normal to a bottom of the inclined surface of the first arcuate section intersects the transfer ram; The normal line of the bottom of the inclined surface of the second arc-shaped section is intersected with a flow limiting ring, the flow limiting ring is positioned in the reaction cavity, an opening is formed in the flow limiting ring, and the sheet conveying flashboard is used for sealing the opening in the technical process.
5. 5. The insulating ring of claim 4, wherein a normal to a top of said annular inclined surface intersects said top closure plate.
6. 6. The insulating ring of claim 5, wherein a normal to said annular inclined surface at a circumferentially intermediate position intersects said top closure plate.
7. 7. The insulating ring of claim 1, wherein a material of the first arcuate section is different from a material of the second arcuate section, and wherein an emissivity of the material of the first arcuate section is higher than an emissivity of the material of the second arcuate section.
8. 8. The insulating ring of claim 1, wherein said heater is an electromagnetic induction heating coil, and wherein the material of said first arcuate section has a higher electrical conductivity than the material of said second arcuate section.
9. 9. The insulating ring of claim 8, wherein the first arcuate section is graphite and the second arcuate section is quartz.
10. 10. The insulating ring of claim 1, wherein the inclined surface of the first arcuate section is darker in color than the inclined surface of the second arcuate section.
11. 11. The insulating ring of claim 1, wherein the surface roughness of the inclined surface of the first arcuate section is greater than the surface roughness of the inclined surface of the second arcuate section.
12. 12. The insulating ring of any one of claims 1 to 11, wherein the insulating ring is a one-piece ring, and the bottom of at least a portion of the insulating ring is fluted.
13. 13. The insulating ring of claim 12, wherein said first arcuate segment does not define said recess and said second arcuate segment defines said recess.
14. 14. The insulating ring of any of claims 1-11, wherein the insulating ring is a ring formed from a plurality of arcuate segments spliced together.
15. 15. The insulating ring of claim 14, wherein a bottom of at least one arcuate segment is notched, said notches not extending through side walls at both ends of said arcuate segment.
16. 16. The insulating ring of claim 15, wherein said first arcuate segment does not define said recess and said second arcuate segment defines said recess.
17. 17. The insulating ring of claim 14, wherein the arcuate sections in the region of lower temperature of the edge of the wafer tray are of a higher electrical conductivity than the arcuate sections in the region of higher temperature of the edge of the wafer tray.
18. 18. A chemical vapor deposition apparatus, comprising: A reaction chamber; a top sealing plate positioned at the top of the reaction cavity; A flow limiting ring which is positioned below the top sealing plate and is provided with an opening; The sheet conveying flashboard is used for closing the opening in the technical process; the wafer tray is located at the bottom of the reaction cavity, a heater is arranged below the wafer tray, and the heat insulation ring as set forth in any one of claims 1-17 is arranged on the outer side of the wafer tray.

Description

Heat insulation ring and chemical vapor deposition equipment Technical Field The invention relates to the technical field of semiconductor equipment, in particular to a heat insulation ring and chemical vapor deposition equipment. Background The uniformity is a key indicator in the chemical vapor deposition (Chemical Vapor Deposition, CVD) process, especially in the Metal vapor chemical deposition (Metal-organic Chemical Vapor Deposition, MOCVD) process for preparing MicroLED (Micro LIGHT EMITTING Diode), and the main factors affecting the indicator include temperature field uniformity and flow field uniformity. The existing chemical vapor deposition equipment generally comprises a reaction cavity, wherein a process reaction area is defined by a top sealing plate, a flow limiting ring and a wafer tray. The wafer tray is driven to rotate by a tray rotating shaft, and a heater is arranged below the wafer tray and is usually heated by radiation or radio frequency. In order to reduce the heat dissipation of the edge of the wafer tray, the diameter of the wafer tray is smaller than that of the heater, and a circle of heat insulation ring is arranged on the outer side of the wafer tray and used for reducing the heat conduction of the tray to the outside. The existing chemical vapor deposition equipment has the following problems when the process is carried out: 1. the top shrouding mainly receives the heat radiation from the wafer tray, and the middle part of top shrouding can receive more radiation than the edge, and the temperature at edge is far below the temperature at middle part, and too big difference in temperature can lead to the top shrouding to break, shortens life. 2. The side wall of the reaction cavity is provided with a sheet conveying opening, a sheet conveying flashboard is arranged at the position of the flow limiting ring corresponding to the position of the sheet conveying opening, the sheet conveying flashboard is an independent flashboard, and the received heat radiation and heat conduction are smaller than other areas of the flow limiting ring, so that a low-temperature surface is formed at the position, and the process uniformity is affected. 3. In some processes requiring in-situ cleaning, the temperature at the transfer ram is too low to cause the deposits to be cleaned. 4. Because the height difference exists between the heat insulation ring and the wafer tray, the flow field above the heat insulation ring cannot be smoothly transited, and turbulent flow exists, so that the uniformity of the flow field is affected. The statements made above merely serve to provide background information related to the present disclosure and may not necessarily constitute prior art. Disclosure of Invention The object of the present invention is to provide a heat insulating ring and a chemical vapor deposition apparatus for solving at least one of the above problems existing in the existing chemical vapor deposition apparatus. In order to achieve the above object, the present invention is realized by the following technical scheme: The heat insulation ring is applied to chemical vapor deposition equipment, the chemical vapor deposition equipment comprises a reaction cavity, a wafer tray is arranged at the bottom of the reaction cavity, a heater is arranged below the wafer tray, the heat insulation ring is arranged at the outer side of the wafer tray, The heat insulation ring is provided with an annular inclined surface, and the annular inclined surface faces to the edge of the top sealing plate in the reaction cavity; the heat insulation ring at least comprises a first arc-shaped section and a second arc-shaped section along the circumferential direction, wherein the emissivity of the first arc-shaped section is larger than that of the second arc-shaped section, and at least part of the area of the first arc-shaped section is opposite to the plate conveying flashboard in the reaction cavity. Optionally, the annular inclined surface is a plane or a convex continuous curved surface. Optionally, the top of the annular inclined surface is not higher than the upper surface of the wafer tray along the circumferential direction of the heat insulation ring. Optionally, during the process, a normal line of the bottom of the inclined surface of the first arc section intersects the sheet conveying flashboard; The normal line of the bottom of the inclined surface of the second arc-shaped section is intersected with a flow limiting ring, the flow limiting ring is positioned in the reaction cavity, an opening is formed in the flow limiting ring, and the sheet conveying flashboard is used for sealing the opening in the technical process. Optionally, a normal to a top of the annular inclined surface intersects the top closure plate. Optionally, a normal to the annular inclined surface at a circumferentially intermediate position intersects the top closure plate. Optionally, the material of the first arc-shaped section is