CN-122013159-A - Pressure batch compensation to stabilize CD variation of trim and deposition processes

Abstract

Pressure batch compensation is disclosed to stabilize CD variations of trim and deposition processes. A controller includes an accumulation determiner configured to determine a first accumulation value indicative of an accumulation amount of material on a surface within a process chamber, and a pressure controller configured to obtain the first accumulation value, obtain at least one of a setpoint pressure associated with an etching step and a duration of the etching step, and adjust a control parameter based on at least one of (i) the first accumulation value and (ii) the setpoint pressure and the duration of the etching step in order to control the pressure within the process chamber during the etching step.

Inventors

• Avinish Gupta
• Porket Agarwal
• RAVI KUMAR
• Adrian Lavoy
• Shiva Saran Bhandari

Assignees

• 朗姆研究公司

Dates

Publication Date

20260512

Application Date

20201203

Priority Date

20191204

Claims (19)

1. 1. A control system, comprising: A processing chamber for performing a process including a plurality of deposition and etching steps, and A controller programmed to: Determining an accumulated amount of material on an inner surface of the processing chamber during at least one of a deposition step and an etching step performed in the processing chamber during the processing; Adjusting a set point of control parameters for subsequent ones of the depositing and etching steps based on the cumulative amount of material on the inner surface of the processing chamber; determining a correlation between said adjustment of said set point of said control parameter and said cumulative amount of material on said inner surface of said process chamber, and Based on the correlation, the control parameter is adjusted by an adjustment amount for a next one of the deposition step and the etching step, wherein the adjustment amount compensates for a current material accumulation amount on the inner surface of the processing chamber.
2. 2. A controller according to claim 1, wherein the control parameter is a pressure volume within the process chamber, and wherein the controller is programmed to use the stored data to determine the adjustment volume and to adjust the pressure volume in accordance with the adjustment volume.
3. 3. The controller of claim 2, wherein the stored data is a polynomial that correlates a cumulative amount to a corresponding adjustment amount.
4. 4. The controller of claim 2, wherein the adjustment amount is a ratio of (i) a pressure amount required to compensate for the accumulated amount to (ii) a set point pressure.
5. 5. The controller of claim 2, wherein the controller is programmed to multiply a set point pressure by the adjustment amount to adjust the control parameter.
6. 6. The controller of claim 1, wherein the controller is configured to determine the cumulative amount based on at least one of a number of etching steps performed within the processing chamber, a number of cycles of etching steps and deposition steps performed within the processing chamber, a total duration of etching steps and deposition steps performed within the processing chamber, and a number of substrates processed within the processing chamber.
7. 7. The controller of claim 1, wherein the control parameter is a duration of the etching step, and wherein the controller is programmed to use the stored data to determine the adjustment amount and adjust the duration of the etching step in accordance with the adjustment amount.
8. 8. The controller of claim 7, wherein the adjustment amount corresponds to an amount that increases a duration of the etching step to compensate for the cumulative amount.
9. 9. The controller of claim 7, wherein the controller is programmed to multiply a duration of the etching step by the adjustment amount to adjust the control parameter.
10. 10. The controller of claim 7, wherein the etching step is a trimming step.
11. 11. A system comprising the controller of claim 10, wherein the controller is further programmed to perform a spacer layer deposition step within the processing chamber after the trimming step.
12. 12. A method, comprising: performing a process in a process chamber using a plurality of deposition and etching steps; Determining an accumulated amount of material on an inner surface of the processing chamber during at least one of a deposition step and an etching step performed in the processing chamber during the processing; Adjusting a set point of control parameters for subsequent ones of the depositing and etching steps based on the cumulative amount of material on the inner surface of the processing chamber; determining a correlation between said adjustment of said set point of said control parameter and said cumulative amount of material on said inner surface of said process chamber, and Based on the correlation, the control parameter is adjusted by an adjustment amount for a next one of the deposition step and the etching step, wherein the adjustment amount compensates for a current material accumulation amount on the inner surface of the processing chamber.
13. 13. The method of claim 12, wherein the control parameter is a pressure amount within the process chamber, the method further comprising: Determining the adjustment amount using the stored data, and And adjusting the pressure according to the adjustment quantity.
14. 14. The method of claim 13, wherein the stored data is a polynomial that correlates cumulative amounts to corresponding adjustment amounts.
15. 15. The method of claim 13, wherein the adjustment amount is a ratio of (i) an amount of pressure required to compensate for the accumulated amount to (ii) a set point pressure.
16. 16. The method of claim 13, further comprising multiplying a set point pressure by the adjustment amount to adjust the control parameter.
17. 17. The method of claim 12, further comprising determining the cumulative amount based on at least one of a number of etching steps performed within the processing chamber, a number of cycles of etching steps and deposition steps performed within the processing chamber, a total duration of etching steps and deposition steps performed within the processing chamber, and a number of substrates processed within the processing chamber.
18. 18. The method of claim 12, wherein the control parameter is a duration of the etching step, the method further comprising: determining the adjustment amount using the stored data, and And adjusting the duration of the etching step according to the adjustment amount.
19. 19. The method of claim 18, wherein the adjustment amount corresponds to increasing a duration of the etching step to compensate for the accumulated amount.

Description

Pressure batch compensation to stabilize CD variation of trim and deposition processes The application is a divisional application of application number 202080084320.3, application day 2020, 12 and 3, entitled "pressure batch compensation to stabilize CD variation of trimming and deposition process". Cross Reference to Related Applications The present application claims priority from U.S. provisional application No. 62/943,515 filed on date 4 of 2019, 12. The entire disclosures of the above-referenced applications are incorporated herein by reference. Technical Field The present disclosure relates to a double patterning process in an atomic layer deposition substrate processing chamber. Background The background description provided herein is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure. The substrate processing system may be used to process substrates, such as semiconductor wafers. Examples of substrate processing include etching, deposition, photoresist removal, and the like. During processing, the substrate is disposed on a substrate support, such as an electrostatic chuck, and one or more process gases may be introduced into the process chamber. The one or more process gases may be delivered to the process chamber by a gas delivery system. In some systems, the gas delivery system includes a manifold that is connected to a showerhead located in the process chamber by one or more conduits. In some examples, the process utilizes Atomic Layer Deposition (ALD) to deposit a thin film on a substrate. Disclosure of Invention A controller includes an accumulation determiner configured to determine a first accumulation value indicative of an accumulation amount of material on a surface within a process chamber, and a pressure controller configured to obtain the first accumulation value, obtain at least one of a setpoint pressure associated with an etching step and a duration of the etching step, and adjust a control parameter based on at least one of (i) the first accumulation value and (ii) the setpoint pressure and the duration of the etching step in order to control the pressure within the process chamber during the etching step. In other features, the control parameter is an amount of the pressure, and the pressure controller is configured to determine a first adjustment coefficient corresponding to the first cumulative value using the stored data and adjust the amount of the pressure according to the first adjustment coefficient. The stored data is a polynomial that correlates the cumulative value with the corresponding adjustment coefficient. The first adjustment factor is a ratio of an amount of pressure required to compensate for the accumulation to the set point pressure. The pressure controller is configured to multiply the set point pressure by the first adjustment coefficient to adjust the control parameter. In other features, the accumulation determiner is configured to calculate the first accumulation value based on at least one of a number of etching steps performed within the processing chamber, a number of cycles of etching steps and deposition steps performed within the processing chamber, a total duration of etching steps and deposition steps performed within the processing chamber, and a number of substrates being processed within the processing chamber. The control parameter is the duration of the etching step and the pressure controller is arranged to use the stored data to determine a first adjustment factor corresponding to the first accumulated value and to adjust the duration of the etching step in accordance with the first adjustment factor. In other features, the first adjustment coefficient corresponds to an amount to increase the duration of the etching step to compensate for the accumulation. The pressure controller is configured to multiply the duration of the etching step by the first adjustment coefficient to adjust the control parameter. The etching step is a trimming step. A system includes a controller further configured to perform a spacer layer deposition step within the processing chamber after the trimming step. A method includes obtaining a first cumulative value indicative of an amount of material accumulation on a surface within a process chamber, obtaining at least one of a setpoint pressure associated with an etching step and a duration of the etching step, and adjusting a control parameter based on at least one of (i) the first cumulative value and (ii) the setpoint pressure and the duration of the etching step in order to control the pressure within the process chamber during the etching step. In other features, the control parameter is an amount of the p