CN-122013162-A - Preparation method of atomic-level uniform array antenna salient points

CN122013162ACN 122013162 ACN122013162 ACN 122013162ACN-122013162-A

Abstract

The invention belongs to the technical field of composite material preparation, and particularly relates to a preparation method of an atomic-level uniform array antenna bump, which comprises the steps of firstly depositing an ultra-flat copper film on a monocrystalline silicon wafer substrate by adopting a chemical deposition method; then preparing a mixed system of copper-containing complexing solution and reducing solution, spreading the mixed system on the surface of an ultra-flat copper film, introducing ammonia gas for reaction, growing in situ on the surface of the copper film to form a nano array bump structure, and cleaning, drying in the shade and heating to obtain the planar copper foil with the nano array bump structure. The method disclosed by the invention is simple in process and strong in controllability, the surface of the obtained copper foil is provided with the uniformly distributed nano array bump structure, the specific surface area and the surface activity of the copper foil are obviously improved, and the copper foil has a wide application prospect in the fields of radars, 6G antennas, electronic devices, heat dissipation materials, catalyst carriers and the like.

Inventors

YE CHUANLIN
Ye Yangguang

Assignees

叶传林
叶阳光

Dates

Publication Date: 20260512
Application Date: 20260310

Claims (3)

1. The preparation method of the atomic-level uniform array antenna salient point is characterized by adopting a chemical deposition method and comprising the following specific steps of: step S1, selecting a monocrystalline silicon wafer with the diameter of 30cm and the flatness Ra of less than or equal to 0.1nm as a substrate, cleaning to obtain a clean and flat silicon substrate, horizontally placing the clean and flat silicon substrate at the bottom of a container, uniformly mixing 0.005-0.02mol/L copper chloride solution and 0.05-0.1mol/L hydrazine hydrate solution, regulating the pH value to be less than or equal to 5 by hydrochloric acid, pouring the mixture into the container, standing for 5-10 minutes, slowly introducing ammonia gas, depositing and slowly forming an ultra-flat copper foil on the surface of the silicon substrate, and carrying out lossless stripping on the copper foil and the silicon substrate to obtain the ultra-flat copper foil; Step S2, preparing A solution, namely mixing 40ml of 0.1mol/L tetraethylenepentamine solution with 10ml of 0.1mol/L succinaldehyde solution, completely reacting, adding 40ml of 0.1mol/L copper chloride solution, stirring, complexing and standing, taking 4.2ml of copper complexing solution, dripping 995.8mlpH =4 and 1% PEG-200 solution, uniformly stirring, and preparing the A solution with the copper ion concentration of 0.00042 mol/L; Preparing solution B, namely preparing 990ml solution containing hydrazine hydrate with the concentration of 2%, adding hydrochloric acid to adjust the pH value to be 4 and PEG-200 with the concentration of 1%, and standing for later use; Preparing solution C, namely dripping 10ml of solution A into 990 ml of solution B while stirring, fully stirring and uniformly mixing to obtain solution C, and standing for later use; Step S3, uniformly spreading 7ml of the mixed solution C obtained in the step S2 on the surface of the ultra-flat copper foil with the diameter of 30 cm horizontally placed and obtained in the step S1, standing for infiltration, measuring and calculating that the average thickness of a liquid film is 0.1mm, slowly introducing ammonia gas for standing reaction to generate 4-copper clusters, immersing the clusters in the surface of the copper foil, washing and drying in the shade, forming a nano array bump structure with high density, good uniformity, regular arrangement, equal interval and 4 nano interval on the ultra-flat copper foil base, heating to 150-350 ℃ to tightly combine bumps and the copper foil to obtain the planar copper foil with the nano array bump structure, The pitch of the tips of the bump arrays in the planar copper foil with the nano-array bump structure is 3-5 nm, and the array density is 5.10-6.25X10 16 /m 2 .
2. The preparation method of the atomic-level uniform array antenna bump is characterized in that a planar copper foil with a nano array bump structure is shaped by a copper foil forming device, the planar copper foil comprises a horn cavity, the lower end of the horn cavity is connected with an air source through an air connecting pipe, the air source is a low-temperature high-pressure air source with the temperature of 30 ℃, and the pressure of the high-pressure air source is 0.6Mpa; The upper end of the horn-shaped cavity is connected with a lower connecting ring, the outer wall of the upper end of the horn-shaped cavity is also provided with a heating belt, the upper surface of the lower connecting ring is coated with heat-conducting silica gel, and the horn-shaped cavity is filled with high-temperature-resistant light sponge; The copper foil is molded in the molding spherical mold, the mold cavity of the molding spherical mold faces the trumpet-shaped cavity, micropores with the diameter of 1-2 mu m are uniformly distributed on the surface of the molding spherical mold and are used for exhausting, an upper connecting ring matched with the lower connecting ring is installed at the lower end of the molding spherical mold, the upper end of the molding spherical mold is connected with an oil cylinder through a guide post, and the oil cylinder drives the molding spherical mold to lift through the guide post so as to form fit with the trumpet-shaped cavity.
3. The method for manufacturing the atomic-level uniform-array antenna bump according to claim 2, wherein the shaping comprises the steps of: Step one, installing a copper foil forming device, and connecting a low-temperature high-pressure air source; step two, paving heat conduction silica gel on the lower connecting ring and the upper connecting ring; placing a copper foil at the upper end of the horn-shaped cavity, wherein the edge of the copper foil extends out of the lower connecting ring; Starting the oil cylinder, driving the spherical forming die to descend through the guide post, and enabling the upper connecting ring and the lower connecting ring to be matched and pressed on the edge of the copper foil to form a seal; step five, starting a heating belt, controlling the temperature at 150 ℃, keeping the temperature for 1min, and closing the heating belt to heat the edge of the copper foil; Step six, controlling low-temperature high-pressure air flow to enter the trumpet-shaped cavity through a throttle valve, increasing the pressure to 0.6Mpa in the duration of 1-6min to deform the copper foil and attach the copper foil to the molding spherical mold cavity, exhausting air through micropores during the period, and keeping for 5min to fully shape the copper foil; Step seven, pressure relief is carried out through the gas connection pipe, and the copper foil is shaped; and step eight, starting the oil cylinder, driving the forming spherical surface die to lift up and down through the guide post, separating the formed copper foil from the forming spherical surface die under the action of dead weight, leaving the copper foil to the upper end of the horn-shaped cavity, and taking down and storing the copper foil for later use.

Description

Preparation method of atomic-level uniform array antenna salient points Technical Field The invention belongs to the technical fields of transmitting and receiving devices, nano array materials, photoelectric detection and communication, and particularly relates to a preparation method of an atomic-level uniform array antenna bump. Background The performance of the transmitting and receiving device serving as a core component in the fields of communication, detection, sensing and the like directly determines the signal transmission efficiency, detection precision, energy consumption level and application scene adaptation capability of the whole system, and is widely applied to a plurality of key fields of wireless communication, radar detection, quantum sensing, satellite-borne equipment and the like. With rapid iteration of modern electronic devices in the directions of miniaturization, flexibility, high integration and high precision, and rapid increase of requirements of polymorphic application scenes (such as curved surfaces and spherical devices), the inherent technical bottlenecks of the existing transmitting and receiving devices are increasingly prominent, so that technical upgrading and industrial development of related fields are severely restricted, and the specific bottlenecks are mainly embodied in the following aspects. Firstly, in the core performance level, the existing transmitting and receiving device cannot realize the accurate nucleation and uniform arrangement of atomic-level metal atomic clusters, so that the density of transmitting points is low, the superposition efficiency of signals and energy is limited, and the requirements of high-frequency band, high-precision communication and detection are difficult to meet. The uniform arrangement of atomic scale is the key for improving the stability of signal transmission and enhancing the energy utilization rate, and the traditional preparation process is limited by insufficient precision, so that the core requirement cannot be realized, and the method becomes a primary bottleneck for restricting the improvement of the performance of the device. In addition, in the aspect of form adaptation and large-scale application, the conventional device is difficult to prepare a flexible, large-area and film-pasting type array structure, has poor area and form adaptability, cannot adapt to the installation requirements of multi-form carriers such as planes, curved surfaces, spheres and the like, and particularly aims at the problems that the conventional preparation process has difficult forming, uneven curvature, easy deformation and the like, and cannot meet the application requirements of spherical equipment. Moreover, in the aspects of preparation technology and device stability, phenomena such as metal cluster stacking and protrusion easily occur in the existing preparation process, so that the surface evenness of the device is poor, the parallel light output effect and the detection precision are affected, and the device cannot adapt to scenes with high requirements on output and receiving precision. Aiming at a plurality of bottlenecks of the existing transmitting and receiving devices, no effective solution is available in the industry at present, and the method can simultaneously realize uniform atomic-level arrangement, flexible large-area preparation, multi-form adaptation, metal cluster stacking prevention, natural parallel light output and ultra-high roundness of spherical curved surfaces, and meets the industrial mass production requirement. The invention aims to overcome the defects of the prior art, provide an array transmitting and receiving antenna with atomic-level precision, ultrahigh density, flexibility, flexible curved surface, large-area mass production and low power consumption parallel light output, provide a complete, stable and industrialized preparation method, ensure the flatness of a plane from a substrate source, solve the industrial problems of insufficient array growth precision and poor curved surface forming roundness, and have important practical significance and industrial value for promoting technical progress in the fields of communication, detection, sensing and the like. Disclosure of Invention The invention aims to overcome the defects in the prior art, provides a preparation method of an atomic-level uniform array antenna bump, A preparation method of an atomic-level uniform array antenna bump adopts a chemical deposition method, and comprises the following specific steps: step S1, selecting a monocrystalline silicon wafer with the diameter of 30cm and the flatness Ra of less than or equal to 0.1nm as a substrate, cleaning to obtain a clean and flat silicon substrate, horizontally placing the clean and flat silicon substrate at the bottom of a container, uniformly mixing 0.005-0.02mol/L copper chloride solution and 0.05-0.1mol/L hydrazine hydrate solution, regulating the pH value to be less than or equal t