CN-122013266-A - Preparation method of foam copper-manganese alloy

CN122013266ACN 122013266 ACN122013266 ACN 122013266ACN-122013266-A

Abstract

The application particularly discloses a preparation method of a foam copper-manganese alloy, which comprises the steps of S100, selecting a foam base material, electroplating copper on the foam base material to obtain foam copper, S200, removing the foam base material on the foam copper, S300, electroplating manganese on the foam copper from which the foam base material is removed, and carrying out alloying treatment to obtain the foam copper-manganese alloy. In the application, firstly copper is plated on the foam substrate, then the foam substrate is removed, and after manganese is plated on the foam copper from which the foam substrate is removed, alloying treatment is carried out, so that the final foam copper-manganese alloy is obtained, the technical problem that co-deposition cannot be realized due to too large potential difference of the copper-manganese alloy in the prior art is effectively solved, and the manganese content in the foam copper-manganese alloy prepared by the preparation method is controllable and adjustable.

Inventors

ZHONG FAPING
YAN YONG
HAO SHENGCE
ZOU CHAO
ZHOU XIAOPING
XIAO JINCHUN
CHEN CHUNLEI
ZHU YUANXIANG

Assignees

常德力元新材料有限责任公司

Dates

Publication Date: 20260512
Application Date: 20241220

Claims (10)

1. A method for preparing a foam copper-manganese alloy, which is characterized by comprising the following steps: s100, selecting a foam substrate and electroplating copper on the foam substrate to obtain foam copper; S200, removing the foam base material on the foam copper; and S300, electroplating manganese on the foam copper from which the foam substrate is removed, and performing alloying treatment to obtain the foam copper-manganese alloy.
2. The method for preparing the foam copper-manganese alloy according to claim 1, wherein the step S100 is specifically to select a foam substrate, conduct conductive treatment and activation treatment on the foam substrate, and then copper-plate the foam substrate.
3. The method for preparing the foam copper-manganese alloy according to claim 2, wherein the foam substrate is polyurethane or polyether open-cell sponge, and the conductive treatment is one of physical vapor deposition, chemical vapor deposition, electroless plating, carbon-coated glue or conductive metal powder-coated glue.
4. The method for preparing the foam copper-manganese alloy according to claim 3, wherein the foam base material is subjected to activation treatment, specifically, the foam base material subjected to the conductivity treatment is placed in sulfuric acid with the mass fraction of 5-10%, and the activation time is 1-3s.
5. The method according to claim 4, wherein the copper-plating bath in the step S100 is one of an alkaline copper plating system and a pyrophosphoric acid copper plating system.
6. The method for preparing a foam copper-manganese alloy according to claim 5, wherein the electroplating process conditions of the electroplated copper in the step S100 are that the electroplating temperature is 35-65 ℃, the current density is 3-10A/dm 2 , the electroplating time is 35-45min, and the pH value is 8-9.
7. The method for preparing the foam copper-manganese alloy according to claim 6, wherein the step S200 is characterized in that firstly, the foam copper is placed in an incinerator with the temperature of 350-750 ℃ for incineration for 3-10min, then the incinerated foam copper is sent into a reducing furnace with the temperature of 800-950 ℃ for reduction for 3-10min under the hydrogen atmosphere, and finally, the reduced foam copper is placed in 5-10% hydrochloric acid for activation and then is washed with water for 1-3S, and the washing time is 1-3S.
8. The method for preparing the foam copper-manganese alloy according to claim 7, wherein in the step S300, the plating solution of the electroplated manganese comprises, by mass, 50-150g/L of manganese salt, 60-180g/L of complexing agent, 80-120g/L of buffer, 5-50g/L of stabilizer, 1-30g/L of reducing agent, 0.1-2g/L of surfactant, 0.1-10g/L of additive, and the balance of water, wherein the manganese salt is at least one of manganese sulfate and manganese chloride, the complexing agent is at least one of ammonium thiocyanate, ammonium sulfate and ammonium chloride, the buffer is at least one of EDTA-4Na, sodium citrate, potassium sodium tartrate, sodium gluconate and sodium thiocyanate, the stabilizer is ascorbic acid, the stabilizer is at least one of sodium thiosulfate and sodium sulfite, the surfactant is at least one of OP-10 and sodium dodecyl sulfate, the additive is at least one of triethanolamine, selenium dioxide and polyethylene glycol, and selenium dichloride, and the configuration is that the plating solution is adjusted to pH of the solution is required to be adjusted to be 9 after the plating is completed.
9. The method for preparing a foam copper-manganese alloy according to claim 8, wherein in the step S300, the process conditions of manganese electroplating are that the electroplating temperature is 5-35 ℃, the electroplating time is 3-10min, the cathode current density is 10-30A/dm 2 , and the pH value is 6-9.
10. The method for preparing the foam copper-manganese alloy according to claim 9, wherein the alloying treatment in the step S300 comprises water washing, air drying and heat treatment, wherein the water washing process is that pure water is utilized for ultrasonic water washing for 1-3min, the air drying process is that the air speed is 2-3m 3 /min, the air drying time is 3-5min, and the heat treatment process is that the temperature is 820-880 ℃ in the atmosphere of reducing gas or inert gas for 0.2-2h.

Description

Preparation method of foam copper-manganese alloy Technical Field The application belongs to the technical field of alloy material treatment, and particularly relates to a preparation method of foam copper-manganese alloy. Background At present, since copper-manganese alloys on the market need special three-dimensional porous structures, many technical synthesis methods are limited. For example, by adopting a powder metallurgy foaming method, the production efficiency is low, continuous production cannot be realized, the structure is also uncontrollable, the phenomenon that the hole positions are closed possibly exists, the specific surface area of the battery is seriously influenced, and the internal resistance of the battery is influenced in the application process due to the residual foaming agent, so that the battery performance is not beneficial to optimization. For example, copper-manganese alloy is produced by adopting an electroplating mode of a three-dimensional porous sponge matrix material with a fixed form, and co-deposition cannot be realized due to too large potential difference of the copper-manganese alloy. For example, manganese is deposited singly, because manganese deposition requires high potential and high current density, common conductive sponge cannot bear the potential and current of the sponge, high-temperature carbonization and pyrolysis of a foam substrate can be caused by overlarge raw material resistance in the production process, if foam metal materials are used for electroplating, the specific surface area of the foam metal materials is large, and the current density difference between the inner layer and the outer layer of the materials is large, so that the electroplating apparent current density and the actual current density are different by more than several times, a high-current area is burnt due to overload, and a low-current area cannot be plated due to overlarge current density. The actual minimum current density of the conventional manganese electroplating formula is 25A/dm < 2 >, and the minimum apparent current density required by the electroplating is more than 150A/dm < 2 >, due to the porous structure of the foam metal and the poor distribution of the internal current density and the external current density, the common porous metal is difficult to bear the high current density, and the problems of a power supply mode and the like exist, so that the practical implementation feasibility is almost zero. In view of the above, the application provides a preparation method of a foam copper-manganese alloy. Disclosure of Invention In order to solve the technical problems, the application provides a preparation method of foam copper-manganese alloy, which comprises the following steps: s100, selecting a foam substrate and electroplating copper on the foam substrate to obtain foam copper; S200, removing the foam base material on the foam copper; and S300, electroplating manganese on the foam copper from which the foam substrate is removed, and performing alloying treatment to obtain the foam copper-manganese alloy. In some embodiments, the step S100 is specifically to select a foam substrate, conduct the conductive treatment and the activation treatment to the foam substrate, and then copper-plating the foam substrate. In some embodiments, the foam substrate is a polyurethane or polyether open cell sponge and the conductive treatment is one of physical vapor deposition, chemical vapor deposition, electroless plating, carbon-coated glue, or conductive metal powder-coated glue. In some embodiments, the foam substrate is subjected to an activation treatment, specifically, the foam substrate subjected to the conductivity treatment is placed in sulfuric acid with a mass fraction of 5-10%, and the activation time is 1-3s. In some embodiments, the plating solution for electroplating copper in step S100 is one of a copper acid plating system, a copper alkali plating system, or a copper pyrophosphate plating system. In some embodiments, the electroplating process conditions of the electroplated copper in the step S100 are that the electroplating temperature is 35-65 ℃, the current density is 3-10A/dm 2, the electroplating time is 35-45min, and the pH value is 8-9. In some embodiments, the step S200 is specifically that firstly, the foamy copper is put into an incinerator with the temperature of 350-750 ℃ for incineration for 3-10min, then the incinerated foamy copper is put into a reducing furnace with the temperature of 800-950 ℃ under the hydrogen atmosphere for reduction for 3-10min, and finally, the reduced foamy copper is put into 5-10% hydrochloric acid for activation and then is washed with water for 1-3S, and the washing time is 1-3S. In some embodiments, in the step S300, the plating solution for plating manganese comprises 50-150g/L of manganese salt, 60-180g/L of complexing agent, 80-120g/L of buffering agent, 5-50g/L of stabilizer, 1-30g/L of reducing agent, 0.1-2g/