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CN-122013305-A - Preparation device and preparation method for heavy antimony doped monocrystalline silicon

CN122013305ACN 122013305 ACN122013305 ACN 122013305ACN-122013305-A

Abstract

The invention discloses a preparation device and a preparation method for heavy antimony doped monocrystalline silicon. The preparation device comprises a crystal pulling furnace main body, a lifting mechanism and a first driving mechanism, wherein a first cavity is arranged in the crystal pulling furnace main body, a crucible is arranged in the first cavity, the first driving mechanism can drive the crucible to rotate, a second driving mechanism which is arranged above the crucible is arranged at the lifting end of the lifting mechanism, the second driving mechanism can drive a seed crystal to rotate, the preparation method comprises the steps of placing the crucible in the first cavity, filling solid monocrystalline silicon material into the crucible, heating the crucible to melt the solid monocrystalline silicon material in the crucible, inserting the lower end of the seed crystal into the melted monocrystalline silicon material, driving the crucible to rotate and driving the seed crystal to rotate, wherein the rotating direction of the crucible is opposite to that of the seed crystal, and driving the seed crystal to synchronously move upwards. The invention is applied to the technical field of monocrystalline silicon preparation.

Inventors

  • ZHANG XIANQIN
  • XU YAO
  • Qiao le
  • FU MINGQUAN
  • XU ZHIQUN

Assignees

  • 四川高景太阳能科技有限公司
  • 高景太阳能股份有限公司

Dates

Publication Date
20260512
Application Date
20260210

Claims (10)

  1. 1. The preparation device for the heavy antimony doped monocrystalline silicon is characterized by comprising a crystal pulling furnace main body (1), a lifting mechanism (2) and a first driving mechanism (3), wherein a first cavity (4) is arranged in the crystal pulling furnace main body (1), a crucible (5) is arranged in the first cavity (4), the first driving mechanism (3) can drive the crucible (5) to rotate, a second driving mechanism (6) positioned above the crucible (5) is arranged at the lifting end of the lifting mechanism (2), and the second driving mechanism (6) can drive a seed crystal (7) to rotate.
  2. 2. The preparation device for heavy antimony doped monocrystalline silicon according to claim 1, wherein an insulating layer (8) is arranged on the inner wall of the first chamber (4), the insulating layer (8) is arranged outside the crucible (5) in a surrounding mode, a second chamber (9) is arranged in the crystal pulling furnace main body (1), high-temperature heat insulation cotton (10) is arranged in the second chamber (9), and the high-temperature heat insulation cotton (10) is arranged outside the insulating layer (8) in a surrounding mode.
  3. 3. The preparation device for heavy antimony doped monocrystalline silicon according to claim 2, wherein the heat preservation layer (8) and the high-temperature heat insulation cotton (10) are symmetrically arranged in the first chamber (4).
  4. 4. The preparation device for heavy antimony doped monocrystalline silicon, as set forth in claim 1, characterized in that the bottom of the first cavity is provided with a mounting groove (11), the driving end of the first driving mechanism (3) is provided with a connecting shaft (12), the connecting shaft (12) is located in the mounting groove (11), the upper end of the connecting shaft (12) is connected with a mounting seat (13), a crucible placing groove (14) is arranged on the mounting seat (13), the crucible (5) is located on the crucible placing groove (14), a heating pipe (15) is sleeved outside the crucible (5), a heater (16) is arranged on the crystal pulling furnace main body (1), and the heater (16) is electrically connected with the heating pipe (15).
  5. 5. The preparation device for heavy antimony doped monocrystalline silicon, as set forth in claim 4, characterized in that an annular limiting groove (17) is provided on the inner wall of the mounting groove (11), an annular limiting block (18) is provided on the mounting seat (13), and the annular limiting block (18) is slidably fitted in the annular limiting groove (17).
  6. 6. The preparation device for heavy antimony doped monocrystalline silicon according to claim 1, wherein a furnace cover (19) is arranged at the upper end of the crystal pulling furnace main body (1), an auxiliary chamber (20), an argon filling pipe (21) and a vacuum extractor (22) which are all communicated with the first chamber (4) are arranged on the furnace cover (19), a third chamber (23) communicated with the first chamber (4) is arranged in the auxiliary chamber (20), and the lifting mechanism (2) and the second driving mechanism (6) are both positioned in the third chamber (23).
  7. 7. The preparation device for heavy antimony doped monocrystalline silicon according to claim 6, wherein the lifting mechanism (2) comprises a multi-stage telescopic rod (24), the upper end of the multi-stage telescopic rod (24) is fixedly connected to the upper end of the third chamber (23), the second driving mechanism (6) comprises a driving motor (25), the driving motor (25) is located at the lower end of the multi-stage telescopic rod (24), a movable seat (26) is arranged at the driving end of the driving motor (25), a rotating shaft (27) is arranged on the movable seat (26), and the seed crystal (7) is arranged at the lower end of the rotating shaft (27).
  8. 8. The apparatus of claim 7, wherein a guide block (28) is disposed on the movable base (26), a guide groove (29) is disposed in the third chamber (23), and the guide block (28) is slidably fitted in the guide groove (29).
  9. 9. The preparation device for the heavy antimony doped monocrystalline silicon, as claimed in claim 1, is characterized in that an annular overflow plate (30) is sleeved on the crucible (5), the annular overflow plate (30) is abutted against the inner wall of the first chamber (4), and an overflow groove (31) is formed in the upper end of the annular overflow plate (30).
  10. 10. A preparation method of heavy antimony doped monocrystalline silicon, characterized in that the preparation device for heavy antimony doped monocrystalline silicon according to any one of claims 1-9 is adopted, and comprises the following steps: step S101, placing a crucible (5) in a first chamber (4), and filling solid monocrystalline silicon material into the crucible (5); Step S102, heating the crucible (5) to melt the solid monocrystalline silicon material in the crucible (5); step S103, inserting the lower end of a seed crystal (7) into the molten monocrystalline silicon material; step S104, driving the crucible (5) to rotate and driving the seed crystal (7) to rotate, wherein the rotation direction of the crucible (5) is opposite to the rotation direction of the seed crystal (7); Step S105, driving the seed crystal (7) to synchronously move upwards.

Description

Preparation device and preparation method for heavy antimony doped monocrystalline silicon Technical Field The invention relates to the technical field of monocrystalline silicon preparation, in particular to a preparation device and a preparation method for heavy antimony doped monocrystalline silicon. Background Silicon is the most common and widely used semiconductor material, when molten elemental silicon solidifies, silicon atoms are arranged into crystal nuclei in a diamond lattice, the crystal nuclei grow into crystal grains with the same crystal face orientation to form monocrystalline silicon, the monocrystalline silicon is taken as a relatively active nonmetallic element crystal and is an important component part of a crystal material, and the production of the monocrystalline silicon material is carried out by the following processes of quartz sand-metallurgical grade silicon-purification and refining-deposited polycrystalline silicon ingot-monocrystalline silicon-silicon wafer cutting, and the main application of the monocrystalline silicon material is as a semiconductor material and solar photovoltaic power generation, heat supply and the like. In the implementation process, the following problems are found in the prior art: 1. In the existing monocrystalline silicon preparation process, a crucible and a seed crystal cannot be rotated, and most of the monocrystalline silicon is pulled to grow in a Czochralski mode, so that the temperature gradient of a solid-liquid interface of the monocrystalline silicon is uneven, and the stability is poor, thereby causing the phenomenon that the monocrystalline silicon is easy to break off in the production process, and the radial uniformity of the electrical property of the monocrystalline silicon cannot be ensured to be consistent; 2. at present, when a crystal pulling furnace is used for preparing monocrystalline silicon, solid polycrystalline silicon material is required to be placed in a crucible and heated, so that the polycrystalline silicon material in the crucible is melted, and in the heating process, heat in the crucible can diffuse towards the furnace wall of the crystal pulling furnace, so that the temperature in the crucible is reduced more rapidly, and the crystallization quality of the monocrystalline silicon is affected. Disclosure of Invention The invention aims to overcome the defects of the prior art, and the first aim is to provide a preparation device for heavy antimony doped monocrystalline silicon, which can avoid breaking bracts of monocrystalline silicon and reduce heat diffusion; The second aim is to provide a preparation method of the heavy antimony doped monocrystalline silicon capable of avoiding the breaking bract of the monocrystalline silicon. The preparation device comprises a crystal pulling furnace main body, a lifting mechanism and a first driving mechanism, wherein a first cavity is arranged in the crystal pulling furnace main body, a crucible is arranged in the first cavity, the first driving mechanism can drive the crucible to rotate, a second driving mechanism positioned above the crucible is arranged at the lifting end of the lifting mechanism, and the second driving mechanism can drive seed crystals to rotate. Further, the inner wall of first cavity is provided with the heat preservation, the heat preservation encloses to be located the outside of crucible, be provided with the second cavity in the crystal pulling furnace main part, be provided with high temperature thermal insulation cotton in the second cavity, high temperature thermal insulation cotton encloses to be located the outside of heat preservation. Further, the heat preservation layer and the high-temperature heat insulation cotton are symmetrically arranged in the first cavity. Further, the bottom of first cavity is provided with the mounting groove, first actuating mechanism's drive end is provided with the connecting axle, the connecting axle is located in the mounting groove, the upper end of connecting axle is connected with the mount pad, be provided with the crucible standing groove on the mount pad, the crucible is located on the crucible standing groove, the heating pipe has been cup jointed to the outside of crucible, be provided with the heater in the crystal pulling furnace main part, the heater with the heating pipe electricity is connected. Further, the inner wall of mounting groove is provided with annular spacing groove, be provided with annular stopper on the mount pad, annular stopper sliding fit is in the annular spacing groove. Further, the upper end of crystal pulling furnace main part is provided with the bell, be provided with on the bell all with auxiliary chamber, argon gas filling pipe and the vacuum extractor of first cavity intercommunication, be provided with in the auxiliary chamber with the third cavity of first cavity intercommunication, elevating system with second actuating mechanism all is located in the third cavity.