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CN-122013308-A - Intrinsic p-type two-dimensional hexagonal beta-GaS monocrystal prepared by space-limited domain CVD method

CN122013308ACN 122013308 ACN122013308 ACN 122013308ACN-122013308-A

Abstract

The invention discloses an intrinsic p-type two-dimensional hexagonal beta-GaS monocrystal prepared by a space-limited CVD method, which is prepared by the following steps of preparing a precursor, placing Ga 2 S 3 powder in a central high-temperature area of a horizontal reaction furnace, pre-burning at 810-830 ℃ to obtain the precursor, mixing Ga 2 S 3 powder and the precursor according to a weight ratio of 5:1, placing the mixed precursor in the central high-temperature area of the reaction furnace, placing an upper substrate and a lower substrate at the downstream of a quartz boat, forming a space between the two substrates, introducing mixed GaS of Ar and H 2 at 860-900 ℃, and performing combustion reaction to obtain the intrinsic p-type two-dimensional hexagonal beta-GaS monocrystal. The prepared two-dimensional beta-GaS two-end photoelectric detector has good stability in the aspects of cyclic work and long-term storage. The manufactured back gate field effect transistor shows p-type conduction behavior, and the responsivity can be improved to 25mA/W after light addition.

Inventors

  • XIN WEI
  • SHI YUJIE
  • XIN XING
  • JING JIAWEI
  • SHI YIMENG
  • XU HAIYANG

Assignees

  • 东北师范大学

Dates

Publication Date
20260512
Application Date
20260213

Claims (7)

  1. 1. An intrinsic p-type two-dimensional hexagonal beta-GaS monocrystal prepared by a space-limited domain CVD method is prepared by the following steps: 1) Preparing a precursor, namely placing Ga 2 S 3 powder in a central high-temperature area of a horizontal reaction furnace, introducing Ar gas to raise the temperature to 810-830 ℃, introducing mixed gas of Ar and H 2 , and continuously carrying out a combustion reaction for 20-40 min; 2) Preparing a mixed precursor, namely mixing Ga 2 S 3 powder with the precursor according to the weight of 4.5-5.5:1; 3) Preparing an intrinsic p-type two-dimensional hexagonal beta-GaS single crystal: a. placing the mixed precursor, the upper substrate and the lower substrate on a quartz boat, forming a space between the two substrates, placing the mixed precursor in a central high-temperature area of a horizontal reaction furnace, and placing the left edge of the upper substrate at a position 12-14 cm away from the precursor; b. Heating the reaction furnace to 860-900 ℃ in Ar atmosphere, introducing mixed GaS of Ar and H 2 , and carrying out combustion reaction for 30-50 min, and taking out the upper substrate and the lower substrate after the temperature is reduced to room temperature to obtain an upper substrate intrinsic p-type two-dimensional hexagonal beta-GaS single crystal and a lower substrate intrinsic p-type two-dimensional hexagonal beta-GaS single crystal; and the mixed gas of Ar and H 2 is introduced, and the content of H 2 is about 35-45%.
  2. 2. The intrinsic p-type two-dimensional hexagonal beta-GaS single crystal prepared by a space-limited CVD method according to claim 1, wherein in step 3), the reaction furnace is heated to 890 ℃.
  3. 3. The intrinsic p-type two-dimensional hexagonal beta-GaS single crystal according to claim 2, wherein the H 2 is about 40%.
  4. 4. The intrinsic p-type two-dimensional hexagonal beta-GaS single crystal prepared by the space-limited CVD method according to claim 1, 2 or 3, wherein the lower substrate is 1 cm ×1 cm size, the upper substrate is 1.5 cm ×1.5 cm, and the mixed precursor is 30-70 mg.
  5. 5. The intrinsic p-type two-dimensional hexagonal beta-GaS single crystal prepared by a space-limited CVD method according to claim 4, wherein the mixed precursor is 70 mg.
  6. 6. The intrinsic p-type two-dimensional hexagonal beta-GaS single crystal prepared by a space-limited CVD method according to claim 5, wherein the ratio of Ga 2 S 3 powder to precursor is 5:1.
  7. 7. The intrinsic p-type two-dimensional hexagonal beta-GaS single crystal prepared by the space-limited CVD method of claim 6, wherein the intrinsic p-type two-dimensional hexagonal beta-GaS single crystal is an upper substrate intrinsic p-type two-dimensional hexagonal beta-GaS single crystal.

Description

Intrinsic p-type two-dimensional hexagonal beta-GaS monocrystal prepared by space-limited domain CVD method Technical Field The invention belongs to the technical field of preparation based on two-dimensional materials, and particularly relates to a chemical vapor deposition method adopting a space-limited domain type, which is used for obtaining high-quality intrinsic p-type two-dimensional hexagonal beta-phase GaS single crystals. Background In recent years, the III-VI semiconductor material has wide application prospect in photoelectron aspect due to the unique energy band structure, rich phase structure and excellent photoelectric property, and becomes a research hot spot in the field of material science. Gallium sulfide (GaS) belongs to a typical group III-VI semiconductor compound, and as a layered material, two-dimensional GaS layers are connected by covalent bonds, and van der waals interactions exist between the layers. Depending on the order of stacking the layers, gaS can form 4 different crystalline phases, with β -GaS being more studied for its best chemical and thermal stability. Two-dimensional beta-GaS is an indirect bandgap semiconductor with a single layer bandgap of about 3.28 eV, which decreases with increasing number of layers. The light-transmitting material has the characteristics of wide band gap, high stability, flexibility, light transmission and the like, so that the light-transmitting material has wide application in the aspects of flexible electronics, photoelectric detectors, hydrogen evolution catalysis, nonlinear optics and the like. The controllable preparation of the two-dimensional beta-GaS is an important precondition for physical property research and wide application. At present, the methods for preparing the two-dimensional beta-GaS mainly comprise a top-down mechanical stripping method, a liquid phase stripping method, a bottom-up physical vapor deposition method, a chemical vapor deposition method and the like. The Chemical Vapor Deposition (CVD) method has the advantages of higher controllability, applicability to industrial production and the like because each growth condition can be independently and accurately regulated, but the two-dimensional GaS prepared by the current CVD method still has the problems of smaller size, irregular shape, uneven layer number, lower crystallization quality and the like. Transistors fabricated based on two-dimensional beta-GaS also exhibit substantially n-type conductivity. As with those conventional n-type and bipolar layered semiconductor materials, researchers often require specific chemical doping, electrode contact and gate voltage regulation to achieve p-type conductivity of the material, which places certain limitations on the application of two-dimensional GaS. In order to solve the problems of two-dimensional GaS in terms of growth preparation and to widen its application in photodetectors, the prior art needs further improvements and innovations. Disclosure of Invention Aiming at the defects of the prior art, the invention aims to provide a preparation method of high-quality intrinsic p-type two-dimensional beta-GaS, and a photoelectric detector and a field effect transistor with good performance are constructed based on the preparation method. An intrinsic p-type two-dimensional hexagonal beta-GaS monocrystal prepared by a space-limited domain CVD method is prepared by the following steps: 1) Preparing a precursor, namely placing Ga 2S3 powder in a central high-temperature area of a horizontal reaction furnace, introducing Ar gas to raise the temperature to 810-830 ℃, introducing mixed gas of Ar and H 2, and continuously carrying out a combustion reaction for 20-40 min; 2) Preparing a mixed precursor, namely mixing Ga 2S3 powder with the precursor according to the weight of 4.5-5.5:1; 3) Preparing an intrinsic p-type two-dimensional hexagonal beta-GaS single crystal: a. placing the mixed precursor, the upper substrate and the lower substrate on a quartz boat, forming a space between the two substrates, placing the mixed precursor in a central high-temperature area of a horizontal reaction furnace, and placing the left edge of the upper substrate at a position 12-14 cm away from the precursor; b. Heating the reaction furnace to 860-900 ℃ in Ar atmosphere, introducing mixed GaS of Ar and H 2, and carrying out combustion reaction for 30-50 min, and taking out the upper substrate and the lower substrate after the temperature is reduced to room temperature to obtain an upper substrate intrinsic p-type two-dimensional hexagonal beta-GaS single crystal and a lower substrate intrinsic p-type two-dimensional hexagonal beta-GaS single crystal; And the mixed gas of Ar and H 2 is introduced, and the content of H 2 is about 35-45%. Step 3), heating the reaction furnace to 890 ℃. The H 2 content is about 40%; The lower substrate with the size of 1 cm multiplied by 1 cm is arranged below, the upper substrate is 1.5 cm multiplied by 1.