CN-122013313-A - Transition metal chalcogenide single crystal thin film and preparation method thereof

CN122013313ACN 122013313 ACN122013313 ACN 122013313ACN-122013313-A

Abstract

The invention discloses a transition metal chalcogenide single crystal film and a preparation method thereof, wherein the preparation method comprises the following steps of providing a sapphire substrate, wherein the sapphire substrate is a P surface [ ] ) Sapphire substrate and R surface ) Sapphire substrate or S-plane [ ] ) Any one of the sapphire substrates; A transition metal chalcogenide single crystal thin film is prepared on a sapphire substrate. The invention adopts P plane ) Sapphire substrate and R surface ) Sapphire substrate or S-plane [ ] ) The sapphire substrate is used as a growth substrate of the transition metal chalcogenide single crystal film, so that the problem of twin crystal formation in the growth process of the transition metal chalcogenide single crystal film is solved from the source, and the wafer-level high-quality transition metal chalcogenide single crystal film can be conveniently and efficiently prepared.

Inventors

WANG XINRAN
Zou Qianlu
LI TAOTAO

Assignees

南京大学

Dates

Publication Date: 20260512
Application Date: 20260213

Claims (10)

1. A method for preparing a transition metal chalcogenide single crystal thin film, characterized in that the method comprises the following steps: Providing a sapphire substrate, wherein the sapphire substrate is a P surface [ ] ) Sapphire substrate and R surface ) Sapphire substrate or S-plane [ ] ) Any one of the sapphire substrates; a transition metal chalcogenide single crystal thin film is prepared on a sapphire substrate.
2. The method for producing a single crystal thin film of a transition metal chalcogenide compound according to claim 1, wherein the symmetry of the surface of the sapphire substrate is C 1v .
3. The method for producing a transition metal chalcogenide single crystal thin film according to any one of claims 1 or 2, wherein an angle between a surface of the sapphire substrate and a standard crystal plane thereof is-5 ° to 5 °, the standard crystal plane being P-plane [ ] ) The R surface is% ) Or S-plane% ) Any one of the following.
4. The method for producing a single crystal thin film of a transition metal chalcogenide compound according to claim 1, wherein the formation of the transition metal chalcogenide compound on the sapphire substrate can have a single minimum value as a function of the orientation angle between the transition metal chalcogenide compound and the sapphire substrate.
5. The method for producing a single crystal thin film of a transition metal chalcogenide according to claim 1, wherein the step of producing a single crystal thin film of a transition metal chalcogenide on a sapphire substrate comprises: forming a plurality of transition metal chalcogenide crystal domains on the sapphire substrate, wherein all transition metal chalcogenide crystal domains grow epitaxially along the same direction; And in the second stage, all transition metal chalcogenide crystal domains continuously grow up and fuse and splice with each other to form a transition metal chalcogenide single crystal film, and the transition metal chalcogenide single crystal film covers the sapphire substrate.
6. The method for producing a single crystal thin film of a transition metal chalcogenide compound according to claim 1, further comprising, before the step of producing a single crystal thin film of a transition metal chalcogenide compound on a sapphire substrate: and carrying out surface treatment on the sapphire substrate so as to enable the surface of the sapphire substrate to be clean and flat.
7. The method for producing a single crystal thin film of a transition metal chalcogenide compound according to claim 6, wherein the step of surface-treating the sapphire substrate comprises: And carrying out annealing treatment on the sapphire substrate, wherein the temperature of the annealing treatment is 850-1600 ℃.
8. The method for producing a single crystal thin film of transition metal chalcogenide according to claim 1, wherein the single crystal thin film of transition metal chalcogenide is produced on a sapphire substrate by a chemical vapor deposition process, a physical vapor deposition process or an atomic layer deposition process.
9. The method for producing a transition metal chalcogenide single crystal thin film according to claim 1, wherein the transition metal chalcogenide single crystal thin film is any one of a molybdenum disulfide single crystal thin film, a molybdenum diselenide single crystal thin film, a tungsten disulfide single crystal thin film, and a tungsten diselenide single crystal thin film.
10. A transition metal chalcogenide single crystal thin film, characterized in that the transition metal chalcogenide single crystal thin film is produced by the production method according to any one of claims 1 to 9.

Description

Transition metal chalcogenide single crystal thin film and preparation method thereof Technical Field The invention belongs to the technical field of semiconductor materials, and particularly relates to a transition metal chalcogenide single crystal film and a preparation method thereof. Background Transition metal chalcogenides (Transition Metal Dichalcogenides, TMDC) are a representative two-dimensional semiconductor material that, due to its atomic thickness, excellent electrostatic conditioning capability, and unique semiconductor band gap characteristics, are considered to be the channel materials that are most promising for supporting next generation high performance low power integrated circuits following silicon. In order to realize large-scale integration of TMDC in electronic devices, the preparation of high-quality, wafer-level single crystal thin films is an indispensable precondition. Currently, epitaxial growth is the main method for preparing a wafer-level transition metal chalcogenide single crystal film, and single crystal sapphire is the most commonly used growth substrate due to good thermal stability, chemical inertness and low cost. Among the most widely studied and used in the prior art is the C-plane (0001) sapphire substrate. However, the sapphire C-plane has triple rotational symmetry (C 3v), which results in two dominant orientations of energy simplicity (0 ° and 60 °) of the transition metal chalcogenide domains at nucleation, and the two orientations are in antiparallel relation to each other. In the growth process of the transition metal chalcogenide thin film, a plurality of transition metal chalcogenide crystal domains parallel to the two orientations are formed respectively, in the splicing process, anti-parallel crystal domains meet to form twin crystal boundaries, the single crystallinity of the thin film is seriously damaged, and the device performance is greatly reduced. In order to solve the problems, the prior art adopts methods of manufacturing surface steps, surface passivation, preparing surface transition layers and the like by beveling a substrate to break the surface symmetry, thereby inducing unidirectional arrangement of crystal domains. However, these methods all rely on external manual intervention and all suffer from poor uniformity and controllability when extended to the preparation of larger size single crystal films of transition metal chalcogenides. Accordingly, in view of the above-described problems, there is a need for a single crystal thin film of a transition metal chalcogenide compound and a method for preparing the same. Disclosure of Invention The invention aims to provide a transition metal chalcogenide single crystal film and a preparation method thereof, which can solve the problem of twin crystal formation from the source and conveniently prepare a wafer-level high-quality transition metal chalcogenide single crystal film. In order to achieve the above object, an embodiment of the present invention provides the following technical solution: A method for preparing a transition metal chalcogenide single crystal thin film, the method comprising the steps of: Providing a sapphire substrate, wherein the sapphire substrate is a P surface [ ] ) Sapphire substrate and R surface) Sapphire substrate or S-plane [ ]) Any one of the sapphire substrates; a transition metal chalcogenide single crystal thin film is prepared on a sapphire substrate. In one embodiment, the symmetry of the surface of the sapphire substrate is C 1v. In one embodiment, the included angle between the surface of the sapphire substrate and the standard crystal face is-5 degrees to 5 degrees, and the standard crystal face is a P face) The R surface is%) Or S-plane%) Any one of the following. In one embodiment, the transition metal chalcogenide can be formed on the sapphire substrate with a single minimum as a function of the angle of orientation between the transition metal chalcogenide and the sapphire substrate. In one embodiment, the step of preparing a single crystal film of a transition metal chalcogenide on a sapphire substrate comprises: forming a plurality of transition metal chalcogenide crystal domains on the sapphire substrate, wherein all transition metal chalcogenide crystal domains grow epitaxially along the same direction; And in the second stage, all transition metal chalcogenide crystal domains continuously grow up and fuse and splice with each other to form a transition metal chalcogenide single crystal film, and the transition metal chalcogenide single crystal film covers the sapphire substrate. In one embodiment, the step of preparing the transition metal chalcogenide single crystal thin film on the sapphire substrate further comprises: and carrying out surface treatment on the sapphire substrate so as to enable the surface of the sapphire substrate to be clean and flat. In one embodiment, the step of performing surface treatment on the sapphire substrate includes